ABOV SEMICONDUCTOR Search Results

MC81F8616

Abstract: MC81F8816 MC81F8616L MC81F8616Q MC81F8816Q SP 8616 icom sc 1025 MC81C8616L bbc timer stt 11 PPR 1042
Contextual Info: ABOV SEMICONDUCTOR Co. Ltd. 8-BIT SINGLE-CHIP MICROCONTROLLERS MC81F8816/8616 User’s Manual Ver. 1.01 Version 1.01 Published by FAE Team 2008 ABOV Semiconductor Co., Ltd. All rights reserved. Additional information of this manual may be served by ABOV Semiconductor offices in Korea or Distributors.

MC81F8616

Abstract: MC80F7708 SP 8616 mc80f77080 MC81F8816Q HMS800 MC81F8616Q TDR1000 009FH 10110101B
Contextual Info: ABOV半导体有限公司 8位单片机 MC81F8816/8616 中文手册（0.0版） ABOV semiconductor www.abov.co.kr MC81F8816/8616 修订记录 0.0版 2.11.2008 本册 0.0版 出版发行 FAE Team 2008 ABOV semiconductor Ltd. All right reserved. 本手册的其它资料由 ABOV 半导体有限公司韩国办公室或者销售商和代理人提供。

MC2003

Abstract: mc2003l ABOV MC2003P 7 segment common cahode led MC2003PCB ABOV Semiconductor
Contextual Info: ABOV 半导体有限公司 带有键盘扫描的8 段 X 5 位 LED 驱动器 MC2003 数据表 Ver. 1.10 Version 1.10 出版发行 2008 ABOV Semiconductor Co., Ltd. All right reserved 本手册的其它资料由 ABOV 半导体有限公司韩国办公室或者销售商和代理人提供。

MC81F4316M

Abstract: MC81F MC81F4216D MC81F4204 MC81F4316D MC81F4X16 MC81F4316 4216-S RX2 0817 MC81F4316S
Contextual Info: MC81F4x16 ABOV SEMICONDUCTOR 8-BIT SINGLE-CHIP MICROCONTROLLERS MC81F4x16 MC81F4216 D/B MC81F4316 S/M/G/D/K MC81F4416 K/Q User’s Manual Ver. 1.31 August 26, 2009 Ver.1.31 1 MC81F4x16 Version 1.31 Published by FAE Team 2008 ~ ABOV Semiconductor Co., Ltd. All rights reserved.

MC80F1604B

Abstract: MC80F1504M MC80F1604D MC80F1604B P MC80F1504 MC80F1604 MC80F1604BP MC80F1604R MC80F1504B MC80
Contextual Info: ABOV半导体有限公司 8位单片机 MC80F1504/1604 中文手册（1.23版） ABOV semiconductor www.abov.co.kr MC80F1504/1604 修订记录 1.23版 11.27.2008 本册 增加20TSSOP 修改“16 SOP(153mil)”封装名称为“16 SOP(150 mil)” 1.22版(11.26.2008)

MC81F4316M

Abstract: MC81F4316 MC81F4216D MC81F4316S 28SOP-MC81F4316M MC81F4316D MC81F4204 MC81F4416 MC81F4216 G810
Contextual Info: MC81F4X16 ABOV 半导体有限公司 8 位单片机 MC81F4x16 MC81F4216 D/B MC81F4316 S/M/G/D/K MC81F4416 K/Q 中文手册（1.31 版） ABOV semiconductor www.abov.co.kr MC81F4X16 修订记录 1.31 版 8.24,2009 本册 更新“典型特征”。 1.3 版 (8.21,2009)

MC81F4204M

Abstract: mc81f4204 MC81F MC81F4204D 1117 asl PKG18 00F4H 0FF00H-0FFFFH 8f 600 r34 MC81F4204B
Contextual Info: MC81F4204 ABOV 半导体有限公司 8 位单片机 MC81F4204 MC81F4204 R/M/V/D/B 中文手册（1.35 版） ABOV semiconductor www.abov.co.kr MC81F4204 修订记录 1.35 版 10.19,2009 本册 增加 R0CONM 寄存器说明中关于 SCK 口的一项注意。

MC81F4216D

Abstract: MC81F4316M 28SOP-MC81F4316M 10fxx MC81F4316 MC81F4X16
Contextual Info: MC81F4X16 ABOV 半导体有限公司 8 位单片机 MC81F4x16 MC81F4216 D/B MC81F4316 S/M/G/D/K MC81F4416 K/Q 中文手册（1.35 版） ABOV semiconductor www.abov.co.kr MC81F4X16 修订记录 1.35 版 10.19,2009 本册 增加 R0CONM 寄存器说明中关于 SCK 口的一项注意。

MC80F0604B

Abstract: MC80F0604D mc80f0504r MC80F0504B MC80F0604 MC80F0604B P MC80F0504D MC80F0504M MC80F0604D P MC80F06
Contextual Info: ABOV半导体有限公司 8位单片机 MC80F0504/0604 中文手册（1.46版） 2008.5 ABOV semiconductor www.abov.co.kr MC80F0504/0604 修订记录 1.46版 5.2008 本册 修正章节“7.电器特性”中的POR和内部OSC。 1.45版(5.2008) 本册 在章节“7.电器特性”中增加POR特性。

MC95FB204R

Abstract: P14DB MC95FB204 mc95f MC95FG204 P05OD MC94FB204
Contextual Info: MC95FB204 ABOV SEMICONDUCTOR Co., Ltd. 8-BIT MICROCONTROLLERS MC95FB204 User’s Manual Ver. 0.3 Preliminary March 19, 2010 Ver.0.3 1 MC95FB204 REVISION HISTORY VERSION 0.3 Preliminary (March 19, 2010) This book Device name is changed to MC95FB204 from MC94FB204.

MC95FG208R

Abstract: MC95FG208 MC95FG208D MC95FG308L MC95FG308 MC95FG208M MC95FG208H MC95FG308D MC95FG308U mc95f
Contextual Info: MC95FG308 ABOV SEMICONDUCTOR Co., Ltd. 8-BIT MICROCONTROLLERS MC95FG308 User‟s Manual Ver. 1.2 Oct 30, 2010 Ver. 1.2 1 MC95FG308 REVISION HISTORY VERSION COMMENT DATE 1.2 Update 11.1.5 register description for clock generator 2010/10/30 1.1 Update endurance spec

MC80F0604B

Abstract: MC80F0604D MC80F0604 MC80F0504B MC80F06 MC80F0604B P mc80f0504r MC80F0604D P 1F25 Transistor C535
Contextual Info: ABOV SEMICONDUCTOR CO., LTD. 8-BIT SINGLE-CHIP MICROCONTROLLERS MC80F0504/0604 User’s Manual Ver. 1.46 REVISION HISTORY VERSION 1.46 (MAY.2008) This book Change POR and Internal OSC characteristics on chapter ‘7.Electrical Characteristics’. VERSION 1.45 (MAR.2008) This book

MC80F1604B

Abstract: MC80F1604D MC80F1504M MC80F1604B P MC80F1504 MC80F1604BP MC80F1604B P PIN OUT DIAGRAM 7036P MC80F1604 hms87c11
Contextual Info: ABOV SEMICONDUCTOR CO., LTD. 8-BIT SINGLE-CHIP MICROCONTROLLERS MC80F1504/1604 User’s Manual Ver. 0.2 SEP. 2007 Ver 0.2 1 REVISION HISTORY VERSION 0.2 (SEP.2007) This book add chapater 15 Serial Input/Output (SIO) add chapter 23IN-System Programming (ISP)

MC95FG8128

Abstract: MC95FG6128L MC95FG0128 MC95FG8128L t04 p6 ST 11791 CDR03 receiver ARM5 MC95FG6128 MXM CONNECTOR
Contextual Info: MC95FG0128 ABOV SEMICONDUCTOR Co., Ltd. 8-BIT MICROCONTROLLERS MC95FG0128 User‟s Manual Ver. 0.7 Nov 29, 2009 Ver. 0.7 1 MC95FG0128 REVISION HISTORY VERSION 0.7 (Nov 29, 2009) update PKG option description VERSION 0.6 (Sep 15, 2009) update PLL feedback divider range

MC81F4104M

Abstract: MC81F4104S ABOV MC81F 84-1SR4 MP-8000CH4 MP-8000 JESD22 a113 MAGNACHIP MagnaChip Semiconductor
Contextual Info: Document name Page RT_Report 1 of 9 MC81F4104x Include : MC81F4104M, MC81F4104S Qualification Report Report No. AQA-09-06-03 Issued Date 30. June. 2009 Issued By ◈ Part Number MC81F4104x Dong Hee Park ◈ Process Feature ( QA Engineer) 2Poly 4 Metal 4KB Flash 8Bit MCU

ECG767

Abstract: ODO4540
Contextual Info: PH IL I P S E C G INC ECG* Semiconductors • • • • • ECG767 DUAL TOGGLE FLIP-FLOP WITH RESET Wide Operating Voltage Rang« - 4.0 to 16 Volts Regulated Supply Not Required Compatible with T T L and DTL Economical 6-Lead Plastic Package Reset R Available to Set Output to 0 Regardless

MC7101C

Abstract: MC7101 MC7101D
Contextual Info: MC7101 EARTH LEAKAGE CURRENT DETECTOR Features  Low Power consumption PD = 5mW 100V/ 200V  100V/200V Common Built-in Voltage Regulator  High Gain Differential Amplifier  High Input Sensitivity (VT = 13.5mV Typ.)  Minimum External Parts  Large Surge Margin

N60E

Abstract: MGW21N60ED MGW21 TME 86 T247
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL Order this document by MGW21N60ED/D DATA — Preliminary — lnsuiated Gate Bipolar Transistor Data Sheet MGW21 N60ED N-Channel Enhancement-Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT is co–packaged with a soft recovery ultra-fast rectifier and uses an advanced

Philips ECG 812

Abstract: transistor KT 816 ECG1110
Contextual Info: 17E P H IL IP S E C G INC p • ^53*120 DGD4GBÖ 4 ■ ECG1110 2-WATT AUDIO POWER AMPLIFIER semiconductors AUDIO AMPLIFIER FOR TAPE PLAYER/RECORDER, MONAURAL AND STEREO PHONOGRAPHS DESCRIPTIO N 3,1 2.6 The E C G 1 1 1 0 is a linear integrated circuit 16 15 14

MKP9V130

Abstract: MKP9V240 MKP9V270 Application motorola
Contextual Info: ‘T1+’’I’J-MT2 PLASTIC SIDAC t!4KH-1 VOLTAGE BILATERAL TRIGGER — l-m-l VOLTAGE ‘TRIGGERS . . . designed for direct interface with the ac power line. Upon reaching the breakover voltage in each direction, the device switches from a blocking state to a low voltage on-state. Conduction will continue like an SCR until the main terminal current

md7002

Contextual Info: , One. TELEPHONE: 973 376-2922 (212)227-6005 : (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. MD7002 (SILICON) MD7002A MD7002B NPN SILICON ANNULAR MULTIPLE TRANSISTORS NPN SILICON MULTIPLE TRANSISTORS . . . designed tor use as differential amplifier;, dual general-purpose

IN1733A

Abstract: 1N1733A IN1733 1N173A 1N1731A IN1731A 1N1734A I960 MIL-STD-750 METHOD 2036 conditions E ML-733
Contextual Info: MIL-S-19500/K2A 13 May 196/« SUPERSEDING MIL-S-19500/142 SigC 20 September I960 MILITARY SPECIFICATION SEMICONDUCTOR DEVICES, SILICON, HIGH VOLTAGE RECTIFIER TYPES 1N1731A, 1N1733A, AND 1N173AA Tliis specification has been approved by the Department of Defense and is man­

TRANSISTOR D 2627

Abstract: 4N32 4N33 MOTOROLA 4N29 4N29A 4N31 4N32A 2N6165 4N324
Contextual Info: 4N29,4H29A 4H30 4H31 4N32.4N324 NPN PHOTOTRANSISTOR AND PN INFRARED EMITTING DIODE . . . Gallium Arsenide LED optically coupled to a Silicon Photo Darlington Transistor designed for applications requiring electrical, isolation, high-current transfer ratios, small package size and low

Contextual Info: ZXMHN6A07T8 60V N-CHANNEL MOSFET H-BRIDGE SUMMARY V BR DSS= 60V : RDS(on)= 0.3 ; ID= 1.6A DESCRIPTION This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance w ith fast sw itching speed. This