ABB GTO GATE UNIT Search Results

GTO thyristor Curve properties

Abstract: ABB 5SGY 35L4502 ABB 5SGy GTO thyristor ABB snubber IGCT ABB GTO gate unit gto dc converter abb GTO thyristor driver igct abb diode DS1
Contextual Info: ABB Semiconductors AG Section 3 SECTION 3 DATA SHEET USER’S GUIDE BY ANTON SCHWEIZER S 3-1 ABB Semiconductors AG Section 3 DATA SHEET USER’S GUIDE 3.1 GTOs Introduction This section is a detailed guide to proper understanding of a GTO data sheet. Parameters and ratings will be defined, and illustrated by

GTO ABB 5SGA 2046

Abstract: IG 2200 19
Contextual Info: VDRM ITGQM ITSM VT0 rT VDclink = = = = = = 4500 3000 25x103 1.9 0.53 2200 V A A V mΩ V Asymmetric Gate turn-off Thyristor 5SGA 30J4505 Doc. No. 5SYA1204-04 Sept. 05 • Patented free-floating silicon technology • Low on-state and switching losses • Annular gate electrode

A125

Abstract: B125 C125 D125
Contextual Info: VDRM ITGQM ITSM VT0 rT VDclink = = = = = = 2500 1500 10x103 1.45 0.90 1400 V A A V mΩ V Asymmetric Gate turn-off Thyristor 5SGA 15F2502 Doc. No. 5SYA1214-02 Oct. 06 • Patented free-floating silicon technology • Low on-state and switching losses • Annular gate electrode

press pack thyristor 10000 VDRM

Abstract: LS 7313 S 5SGA40L4501 LS 7313 - S
Contextual Info: VDRM ITGQM ITSM VT0 rT VDclink = = = = = = 4500 4000 25x103 2.1 0.58 2800 V A A V mΩ V Asymmetric Gate turn-off Thyristor 5SGA 40L4501 Doc. No. 5SYA1208-02 March 05 • Patented free-floating silicon technology • Low on-state and switching losses • Annular gate electrode

Contextual Info: VDRM ITGQM ITSM VT0 rT VDclink = = = = = = 4500 4000 25x103 2.1 0.58 2800 V A A V mΩ Ω V Asymmetric Gate turn-off Thyristor 5SGA 40L4501 Doc. No. 5SYA1208-02 Apr. 03 • Patented free-floating silicon technology • Low on-state and switching losses • Annular gate electrode

RCD snubber

Abstract: ABB GTO gate unit
Contextual Info: VDRM ITGQM ITSM VT0 rT VDclink = = = = = = 4500 600 3x103 1.9 3.5 2800 V A A V mW V Asymmetric Gate turn-off Thyristor 5SGA 06D4502 PRELIMINARY Doc. No. 5SYA1236-00 Jun. 04 • Patented free-floating silicon technology · Low on-state and switching losses

1419

Abstract: capacitor abb
Contextual Info: VDRM ITGQM ITSM VT0 rT VDclink = = = = = = 4500 3000 24x103 2.2 0.6 2800 V A A V mΩ Ω V Asymmetric Gate turn-off Thyristor 5SGA 30J4502 Doc. No. 5SYA1202-03 Jan. 03 • Patented free-floating silicon technology • Low on-state and switching losses • Annular gate electrode

ABB inverter motor fault code

Abstract: Bus Bar torque value table for metric bolts wg9017d2g CSG2001-14A04 2.5 kva inverter diagrams thyristor CSG2001-14A04 TOSHIBA S6475R WG9013A3A Bus Bar torque for metric bolts 3.5 kva inverter circuits
Contextual Info: f l à ALLEN-BRADLEY ^ 5 5 ^ A R O C K W E L L IN T E R N A T IO N A L C O M P A N Y Allen-Bradley 1352C-PIUS GTO Replacement and Installation Guide Kit Instructions GTO Replacement GTO Replacement Kits are available to provide an easy method of changing a

IGCT

Abstract: IGCT thyristor ABB snubber IGCT IGCT 4.5kv IGCT thyristor IGCT thyristor ABB new ABB IGBT inverter PCIM 96 ABB thyristor modules symmetric IGCT
Contextual Info: Application Specific IGCTs Eric Carroll, Bjoern Oedegard, Thomas Stiasny, Marco Rossinelli ICPE, October 2001, Seoul, Korea Copyright [2001] IEEE. Reprinted from the International Conference on Power Electronics. This material is posted here with permission of the IEEE. Such permission of the

5SGF40L4502

Contextual Info: VDRM ITGQM ITSM VT0 rT VDclink = = = = = = 4500 4000 25x103 1.2 0.65 2800 V A A V mΩ V Asymmetric Gate turn-off Thyristor 5SGF 40L4502 Doc. No. 5SYA1209-04 Feb. 05 • Patented free-floating silicon technology • Low on-state and switching losses • Annular gate electrode

GTO thyristor ABB

Abstract: 40L4502
Contextual Info: VDRM ITGQM ITSM VT0 rT VDclink = = = = = = 4500 4000 25x103 1.2 0.65 2800 V A A V mΩ Ω V Asymmetric Gate turn-off Thyristor 5SGF 40L4502 Doc. No. 5SYA1209-04 Jan. 03 • Patented free-floating silicon technology • Low on-state and switching losses • Annular gate electrode

abb phase control thyristors

Abstract: 5szk
Contextual Info: VDRM IT AV M IT(RMS) ITSM VT0 rT = 4200 V = 470 A = 740 A = 6.4x103 A = 1V = 1.5 mΩ Phase Control Thyristor 5STP 04D4200 Doc. No. 5SYA1025-05 May 07 • Patented free-floating silicon technology • Low on-state and switching losses • Designed for traction, energy and industrial applications

Contextual Info: VDRM IT AV M IT(RMS) ITSM VT0 rT = 4200 V = 470 A = 740 A = 7.1•103 A = 1V = 1.5 mW Phase Control Thyristor 5STP 04D4200 Doc. No. 5SYA1025-07 Nov. 13 · Patented free-floating silicon technology · Low on-state and switching losses · Designed for traction, energy and industrial applications

Contextual Info: VDRM IT AV M IT(RMS) ITSM VT0 rT = 4200 V = 1150 A = 1800 A = 19x103 A = 0.95 V = 0.575 mW Phase Control Thyristor 5STP 12F4200 Doc. No. 5SYA1021-06 Jul 13 • Patented free-floating silicon technology · Low on-state and switching losses · Designed for traction, energy and industrial applications

Contextual Info: VDRM IT AV M IT(RMS) ITSM VT0 rT = 2800 V = 5080 A = 7970 A = 77.0•103 A = 0.86 V = 0.07 m Phase Control Thyristor 5STP 45N2800 Doc. No. 5SYA1007-05 Mar. 14 • Patented free-floating silicon technology  Low on-state and switching losses  Designed for traction, energy and industrial applications

Contextual Info: VDRM IT AV M IT(RMS) ITSM VT0 rT = 4200 V = 2075 A = 3260 A = 32x103 A = 0.96 V = 0.285 mΩ Phase Control Thyristor 5STP 18H4200 Doc. No. 5SYA1046-03 May 07 • Patented free-floating silicon technology • Low on-state and switching losses • Designed for traction, energy and industrial applications

Contextual Info: VDRM IT AV M IT(RMS) ITSM VT0 rT = 1400 V = 1960 A = 3080 A = 25x103 A = 0.75 V = 0.157 mΩ Phase Control Thyristor 5STP 21F1400 Doc. No. 5SYA1023-05 May 07 • Patented free-floating silicon technology • Low on-state and switching losses • Designed for traction, energy and industrial applications

5STP12F4200

Abstract: abb phase control thyristors
Contextual Info: VDRM IT AV M IT(RMS) ITSM VT0 rT = 4200 V = 1150 A = 1800 A = 15x103 A = 0.95 V = 0.575 m Phase Control Thyristor 5STP 12F4200 Doc. No. 5SYA1021-05 Feb 12 • Patented free-floating silicon technology  Low on-state and switching losses  Designed for traction, energy and industrial applications

Contextual Info: VDRM IT AV M IT(RMS) ITSM VT0 rT = 1800 V = 1660 A = 2610 A = 21x103 A = 0.83 V = 0.23 mΩ Phase Control Thyristor 5STP 18F1800 Doc. No. 5SYA1028-05 May 07 • Patented free-floating silicon technology • Low on-state and switching losses • Designed for traction, energy and industrial applications

Contextual Info: VDRM IT AV M IT(RMS) ITSM VT0 rT = 4200 V = 1150 A = 1800 A = 17.3•103 A = 0.95 V = 0.575 mW Phase Control Thyristor 5STP 12F4200 Doc. No. 5SYA1021-07 Nov. 13 · Patented free-floating silicon technology · Low on-state and switching losses · Designed for traction, energy and industrial applications

Contextual Info: VDRM IT AV M IT(RMS) ITSM VT0 rT = 2800 V = 620 A = 970 A = 8.8•103 A = 0.92 V = 0.78 m Phase Control Thyristor 5STP 06D2800 Doc. No. 5SYA1020-05 Mar. 14 • Patented free-floating silicon technology  Low on-state and switching losses  Designed for traction, energy and industrial applications

Contextual Info: VDRM IT AV M IT(RMS) ITSM VT0 rT = 2800 V = 1400 A = 2210 A = 18x103 A = 0.82 V = 0.37 m Phase Control Thyristor 5STP 16F2800 Doc. No. 5SYA1022-04 May 12 Patented free-floating silicon technology Low on-state and switching losses Designed for traction, energy and industrial applications

Contextual Info: VDRM IT AV M IT(RMS) ITSM VT0 rT = 4200 V = 1150 A = 1800 A = 15x103 A = 0.95 V = 0.575 mΩ Phase Control Thyristor 5STP 12F4200 Doc. No. 5SYA1021-04 May 07 • Patented free-floating silicon technology • Low on-state and switching losses • Designed for traction, energy and industrial applications

abb phase control thyristors

Abstract: 5STP16F2800
Contextual Info: VDRM IT AV M IT(RMS) ITSM VT0 rT = 2800 V = 1400 A = 2210 A = 18x103 A = 0.82 V = 0.37 mΩ Phase Control Thyristor 5STP 16F2800 Doc. No. 5SYA1022-04 May 07 • Patented free-floating silicon technology • Low on-state and switching losses • Designed for traction, energy and industrial applications