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Sensata Technologies


Sensata Technologies JTEP-2-1REC4-52-1-F1-400 Circuit Breakers Cir Brkr Hyd Mag
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Mouser Electronics	JTEP-2-1REC4-52-1-F1-400					1 - 10 $1139.80 100 $1139.80 1000 $1139.80 10000 $1139.80	Get Quote
Sensata Technologies JTMP-2-1REC4-52-1-F1-400-S Circuit Breakers Cir Brkr Hyd Mag
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Mouser Electronics	JTMP-2-1REC4-52-1-F1-400-S					1 - 10 $1388.42 100 $1388.42 1000 $1388.42 10000 $1388.42	Get Quote

21F1400 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
5STP21F1200 Contextual Info: VDSM ITAVM ITRMS ITSM VT0 rT = = = = = = 1400 V 1960 A 3080 A 25000 A 0.75 V 0.157 mΩ Ω Phase Control Thyristor 5STP 21F1400 Doc. No. 5SYA1023-04 Sep. 01 • Patented free-floating silicon technology • Low on-state and switching losses • Designed for traction, energy and industrial applications	Original	21F1400 5SYA1023-04 21F1400 21F1200 21F0800 CH-5600 5STP21F1200	PDF
Contextual Info: VDSM ITAVM ITRMS ITSM VT0 rT = = = = = = 1400 V 1960 A 3080 A 25000 A 0.75 V 0.157 mΩ Ω Phase Control Thyristor 5STP 21F1400 Doc. No. 5SYA1023-04 Jan. 02 • Patented free-floating silicon technology • Low on-state and switching losses • Designed for traction, energy and industrial applications	Original	21F1400 5SYA1023-04 21F1200 21F0800 CH-5600	PDF
Contextual Info: VDRM IT AV M IT(RMS) ITSM VT0 rT = 1400 V = 1960 A = 3080 A = 25x103 A = 0.75 V = 0.157 mΩ Phase Control Thyristor 5STP 21F1400 Doc. No. 5SYA1023-05 May 07 • Patented free-floating silicon technology • Low on-state and switching losses • Designed for traction, energy and industrial applications	Original	21F1400 5SYA1023-05 21F1400 CH-5600	PDF
21F1400 Abstract: 5STP21F1200 abb 26000 Contextual Info: Key Parameters VDSM = 1400 ITAVM = 2250 ITRMS = 3530 ITSM = 25000 VT0 = 0.75 rT = 0.157 V A A A V mΩ Phase Control Thyristor 5STP 21F1400 Doc. No. 5SYA 1023-03 April, 98 Features • Patented free-floating silicon technology • Low on-state and switching losses	Original	21F1400 21F1400 21F1200 21F0800 67xVDRM CH-5600 5STP21F1200 abb 26000	PDF
Contextual Info: VDSM ITAVM ITRMS ITSM VT0 rT = = = = = = 1400 V 1960 A 3080 A 25000 A 0.75 V 0.157 mΩ Ω Phase Control Thyristor 5STP 21F1400 Doc. No. 5SYA1023-04 Jan. 02 • Patented free-floating silicon technology • Low on-state and switching losses • Designed for traction, energy and industrial applications	Original	21F1400 5SYA1023-04 21F1400 21F1200 21F0800 CH-5600	PDF
Contextual Info: VDSM = 1400 V ITAVM = 1960 A ITRMS = 3080 A ITSM = 25000 A VT0 = 0.75 V rT = 0.157 mΩ Phase Control Thyristor 5STP 21F1400 Doc. No. 5SYA1023-04 Aug.00 • Patented free-floating silicon technology • Low on-state and switching losses • Designed for traction, energy and industrial applications	Original	21F1400 5SYA1023-04 21F1400 21F1200 21F0800 67xVDRM CH-5600	PDF