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ABB Low Voltage Products and Systems 5SGF 40L4502 Thyristor: hockey-puck; 4.5kV; Ifmax: 1.85kA; 1.18kA; Igt: 4A
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	5SGF 40L4502				1	1 $4076.23 10 $3437.92 100 $3437.92 1000 $3437.92 10000 $3437.92	Get Quote
Hitachi Energy 5SGF40L4502 GTO THYRISTOR
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Richardson RFPD	5SGF40L4502				1	1 $3237.39 10 $2829.72 100 $2520.97 1000 $2216.71 10000 $2216.71	Buy Now

40L4502 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
GTO thyristor Abstract: ABB GTO ABB thyristor 5 THYRISTOR GTO gto peak reverse voltage test abb GTO thyristor ABB Contextual Info: VDRM ITGQM ITSM VT0 rT VDClin = = = = = = 4500 4000 25 1.20 0.65 2800 V A kA V Gate turn-off Thyristor 5SGF 40L4502 mΩ V Doc. No. 5SYA 1209-03 Aug. 2000 • Patented free-floating silicon technology • Low on-state and switching losses • Annular gate electrode	Original	40l4502 ch-5600 gto thyristor abb gto +4abb thyristor 5 thyristor gto gto peak reverse voltage test abb gto thyristor abb	PDF
GTO thyristor ABB Abstract: 40L4502 Contextual Info: VDRM ITGQM ITSM VT0 rT VDclink = = = = = = 4500 4000 25x103 1.2 0.65 2800 V A A V mΩ Ω V Asymmetric Gate turn-off Thyristor 5SGF 40L4502 Doc. No. 5SYA1209-04 Jan. 03 • Patented free-floating silicon technology • Low on-state and switching losses • Annular gate electrode	Original	40l4502 5sya1209-04 ch-5600 gto thyristor abb	PDF
Contextual Info: Key Parameters VDRM = 4500 ITGQM = 4000 ITSM = 25 VT0 = 1.20 rT = 0.65 VDClink = 2800 V A kA V Gate turn-off Thyristor 5SGF 40L4502 mΩ V Doc. No. 5SYA 1209-04 April 98 Features The 5SGF 40L4502 is a 91 mm buffered layer GTO with exceptionally low dynamic and static	Original	40l4502 ch-5600	PDF
ABB thyristor 5 Abstract: GTO thyristor ABB THYRISTOR GTO Contextual Info: VDRM ITGQM ITSM VT0 rT VDClin = = = = = = 4500 4000 25 1.08 0.29 2800 V A kA V Gate turn-off Thyristor 5SGT 40L4502 mΩ V MARKETING INFORMATION Doc. No. 5SYA 1235-00 Aug. 2000 • Patented free-floating silicon technology • Low on-state and switching losses	Original	40l4502 ch-5600 abb thyristor 5 gto thyristor abb +1thyristor gto	PDF
40L4502 Abstract: 123500 Contextual Info: Key Parameters VDRM = 4500 ITGQM = 4000 ITSM = 25 VT0 = 1.08 rT = 0.29 VDClink = 2800 V A kA V Gate turn-off Thyristor 5SGT 40L4502 Marketing Information mΩ V Doc. No. 5SYA 1235-00 Oct. 98 Features The 5SGT 40L4502 is an 91 mm buffered layer, Transparent Emitter non-shorted anode GTO	Original	40l4502 ch-5600 123500	PDF
5SGF40L4502 Contextual Info: VDRM ITGQM ITSM VT0 rT VDclink = = = = = = 4500 4000 25x103 1.2 0.65 2800 V A A V mΩ V Asymmetric Gate turn-off Thyristor 5SGF 40L4502 Doc. No. 5SYA1209-04 Feb. 05 • Patented free-floating silicon technology • Low on-state and switching losses • Annular gate electrode	Original	40l4502 5sya1209-04 ch-5600 5sgf40l4502	PDF
5SDF01R2501 Abstract: 5SGA 5SGA30J2501 RTK 031 Contextual Info: A S Y M M E T R I C _ G T Q T H Y R I S T O R S - ± X 0 GTO - Patentierter freier Druckkontakt. - Alle GTOs werden unter Ausschalt grenzwerten getestet. - Ausgezeichnete O ptimierung zwiscl Durchlass- und Schaltverlusten. - Spezifizierte Höhenstrahlungsfes	OCR Scan	01r2501 05d2501 15f2502 20h2501 +925h2501 30j2501 20h4502 11f2501 03d4501 5sdf01r2501 5sga 5sga30j2501 rtk 031	PDF
reverse-conducting thyristor Abstract: gto Gate Drive circuit IGCT thyristor IGCT mitsubishi Usha Rectifier Emitter Turn-Off thyristor eto thyristor GTO triac HEXFET Power MOSFET designer manual MOS-Controlled Thyristor Contextual Info: I Power Electronic Devices 1 Power Electronics Kaushik Rajashekara, Sohail Anwar, Vrej Barkhordarian, Alex Q. Huang Overview • Diodes • Schottky Diodes • Thyristors • Power Bipolar Junction Transistors • MOSFETs • General Power Semiconductor Switch Requirements • Gate	Original	mct00 reverse-conducting thyristor gto gate drive circuit igct thyristor +7igct mitsubishi usha rectifier emitter turn-off thyristor eto thyristor gto triac hexfet power mosfet designer manual mos-controlled thyristor	PDF