5SZK Search Results

5SLA 3600E170300

Abstract: 5SYA2039 3600E170300
Contextual Info: Data Sheet, Doc. No. 5SYA 1416-03 06-2012 5SLA 3600E170300 HiPak Single DIODE Module VRRM = 1700 V IF = 3600 A Ultra low-loss, rugged SPT+ diode Smooth switching SPT+ diode for good EMC AlSiC base-plate for high power cycling capability AlN substrate for low thermal resistance

Contextual Info: VCE IC = = 3300 V 1200 A ABB HiPakTM IGBT Module 5SNA 1200G330100 Doc. No. 5SYA1563-00 Apr.06 • Low-loss, rugged SPT chip-set • Smooth switching SPT chip-set for good EMC • High insulation package • High power density • AlSiC base-plate for high power

GTO ABB 5SGA 2046

Abstract: IG 2200 19
Contextual Info: VDRM ITGQM ITSM VT0 rT VDclink = = = = = = 4500 3000 25x103 1.9 0.53 2200 V A A V mΩ V Asymmetric Gate turn-off Thyristor 5SGA 30J4505 Doc. No. 5SYA1204-04 Sept. 05 • Patented free-floating silicon technology • Low on-state and switching losses • Annular gate electrode

IGCT thyristor ABB

Abstract: igct abb IGCT 3300V A115 B115 HFBR-1528 HFBR-2528 MTA-156 VT115 IGCT thyristor current max
Contextual Info: VDRM ITGQM ITSM V T0 rT VDC-link = = = = = = 5500 520 3.5x103 2.3 2.3 3300 V A A V mΩ V Reverse Conducting Integrated Gate-Commutated Thyristor 5SHX 06F6010 PRELIMINARY Doc. No. 5SYA1222-05 Aug 07 • High snubberless turn-off rating • Optimized for medium frequency (<1 kHz) and

5SLD0650J450300

Contextual Info: VRRM = IF = 4500 V 2x 650 A ABB HiPakTM DIODE Module 5SLD 0650J450300 PRELIMINARY Doc. No. 5SYA 1599-00 Nov 07 • Ultra low-loss, rugged SPT+ diode • Smooth switching SPT+ diode for good EMC • Industry standard package • High power density • AlSiC base-plate for high power

the calculation of the power dissipation for the igbt and the inverse diode in circuits

Abstract: "the calculation of the power dissipation for the igbt and the inverse diode in circuits" ABB IGBT ABB IGBT inverter 5SYA2042 5sna 1200e330100 transistor book 5SYA2043 ABB IGBT part number explanation
Contextual Info: Application Note Applying IGBTs Applying IGBTs Application Note Björn Backlund, Raffael Schnell Ulrich Schlapbach, Roland Fischer Evgeny Tsyplakov ABB Switzerland Ltd Semiconductors February 08 Table of Contents: 1 APPLYING IGBTS . 3

5SYA2042

Abstract: 5SNA0400J650100
Contextual Info: VCE IC = = 6500 V 400 A ABB HiPakTM IGBT Module 5SNA 0400J650100 Doc. No. 5SYA 1592-03 04-2012 Low-loss, rugged SPT chip-set Smooth switching SPT chip-set for good EMC High insulation package AlSiC base-plate for high power cycling capability AlN substrate for low thermal

abb phase control thyristors

Contextual Info: VDRM IT AV M IT(RMS) ITSM VT0 rT = 6500 V = 2810 A = 4410 A = 65x103 A = 1.12 V = 0.29 m Phase Control Thyristor 5STP 26N6500 Doc. No. 5SYA1001-06 Nov. 12 Patented free-floating silicon technology Low on-state and switching losses Designed for traction, energy and industrial applications

5SNA1200G450300

Abstract: 1200G450300 cosmi
Contextual Info: VCE IC = = 4500 V 1200 A ABB HiPakTM IGBT Module 5SNA 1200G450300 PRELIMINARY Doc. No. 5SYA 1401-00 Dec 08 • Ultra low-loss, rugged SPT+ chip-set • Smooth switching SPT+ chip-set for good EMC • Industry standard package • High power density • AlSiC base-plate for high power

IC 7400 configuration

Abstract: 5SNA1200G450300
Contextual Info: VCE IC = = 4500 V 1200 A ABB HiPakTM IGBT Module 5SNA 1200G450300 Doc. No. 5SYA 1401-01 Mar 09 • Ultra low-loss, rugged SPT+ chip-set • Smooth switching SPT+ chip-set for good EMC • Industry standard package • High power density • AlSiC base-plate for high power

5STP03D6500

Abstract: 5stp 03d6500
Contextual Info: VDRM IT AV M IT(RMS) ITSM VT0 rT = 6500 V = 380 A = 600 A = 4.5x103 A = 1.2 V = 2.3 mΩ Phase Control Thyristor 5STP 03D6500 Doc. No. 5SYA1055-02 June 09 • Patented free-floating silicon technology • Low on-state and switching losses • Designed for traction, energy and industrial applications

abb phase control thyristors

Contextual Info: VDRM IT AV M IT(RMS) ITSM VT0 rT = 5200 V = 3875 A = 6090 A = 55x103 A = 1.03 V = 0.16 mΩ Phase Control Thyristor 5STP 34Q5200 Doc. No. 5SYA1052-02 May 07 • Patented free-floating silicon technology • Low on-state and switching losses • Designed for traction, energy and industrial applications

Contextual Info: VRRM IF AV M IF(RMS) IFSM VF0 rF = = = = = = 5000 3810 5990 45x103 0.903 0.136 Rectifier Diode V A A A V mΩ 5SDD 38H5000 Doc. No. 5SYA1177-00 Sept. 07 • Optimum power handling capability • Very low on-state losses Blocking Maximum rated values Note 1

cosmi

Contextual Info: Data Sheet, Doc. No. 5SYA 1407-05 06-2012 5SNA 1500E330305 ABB HiPakTM IGBT Module VCE = 3300 V IC = 1500 A Ultra low-loss, rugged SPT+ chip-set Smooth switching SPT+ chip-set for good EMC AlSiC base-plate for high power cycling capability AlN substrate for low thermal resistance

IC 7400 configuration

Contextual Info: VCE IC = = 4500 V 650 A ABB HiPakTM IGBT Module 5SNA 0650J450300 Doc. No. 5SYA 1598-03 Apr 12 • Ultra low-loss, rugged SPT+ chip-set • Smooth switching SPT+ chip-set for good EMC • Industry standard package • High power density • AlSiC base-plate for high power

IGCT thyristor ABB

Abstract: high power igct abb agilent 5SZK 9107 Specification
Contextual Info: VDRM ITGQM ITSM V T0 rT VDClink = = = = = = 4500 2200 17x103 1.8 0.533 2800 V A A V mΩ V Reverse Conducting Integrated Gate-Commutated Thyristor 5SHX 26L4510 Doc. No. 5SYA1230-02 May 06 • High snubberless turn-off rating • Optimized for medium frequency (<1 kHz) and

5SNA1000G450300

Abstract: cosmi 5SNA 1000G450300
Contextual Info: VCE IC = = 4500 V 1000 A ABB HiPakTM IGBT Module 5SNA 1000G450300 PRELIMINARY Doc. No. 5SYA 1597-00 Oct 07 • Ultra low-loss, rugged SPT+ chip-set • Smooth switching SPT+ chip-set for good EMC • Industry standard package • High power density • AlSiC base-plate for high power

Contextual Info: Data Sheet, Doc. No. 5SYA 1426-00 05-2012 5SNG 0250P330305 ABB HiPakTM IGBT Module VCE = 3300 V IC = 250 A Ultra low-loss, rugged SPT+ chip-set Smooth switching SPT+ chip-set for good EMC AlSiC base-plate for high power cycling capability AlN substrate for low thermal resistance

Contextual Info: Data Sheet, Doc. No. 5SYA 1416-03 06-2012 5SLA 3600E170300 ABB HiPakTM Single Diode Module VRRM = 1700 V IF = 3600 A Ultra low-loss, rugged SPT+ diode Smooth switching SPT+ diode for good EMC AlSiC base-plate for high power cycling capability AlN substrate for low thermal resistance

5STP08G6500

Abstract: abb phase control thyristors
Contextual Info: V DRM I T AV M I T(RMS) I TSM V T0 rT = 6500 V = 720 A = 1140 A = 11.8x103 A = 1.24 V = 1.015 m Phase Control Thyristor 5STP 08G6500 Doc. No. 5SYA1006-05 Aug 11 • Patented free-floating silicon technology  Low on-state and switching losses  Designed for traction, energy and industrial applications

Contextual Info: VRRM = IF = 4500 V 2x 650 A ABB HiPakTM DIODE Module 5SLD 0650J450300 Doc. No. 5SYA 1599-01 May 08 • Ultra low-loss, rugged SPT+ diode • Smooth switching SPT+ diode for good EMC • Industry standard package • High power density • AlSiC base-plate for high power

Contextual Info: VDRM IT AV M IT(RMS) ITSM VT0 rT = 4200 V = 3170 A = 4980 A = 52x103 A = 0.97 V = 0.158 mΩ Phase Control Thyristor 5STP 28L4200 Doc. No. 5SYA1009-04 May 07 • Patented free-floating silicon technology • Low on-state and switching losses • Designed for traction, energy and industrial applications

5SLD0650J450300

Abstract: Abb diode ABB Switzerland
Contextual Info: VRRM = IF = 4500 V 2x 650 A ABB HiPakTM DIODE Module 5SLD 0650J450300 Doc. No. 5SYA 1599-02 Jan 09 • Ultra low-loss, rugged SPT+ diode • Smooth switching SPT+ diode for good EMC • Industry standard package • High power density • AlSiC base-plate for high power

Contextual Info: VDRM IT AV M IT(RMS) ITSM VT0 rT = 5200 V = 3600 A = 5650 A = 55x103 A = 1.03 V = 0.16 mΩ Phase Control Thyristor 5STP 34N5200 Doc. No. 5SYA1002-04 May 07 • Patented free-floating silicon technology • Low on-state and switching losses • Designed for traction, energy and industrial applications