AAAS Search Results

bf 507 transistor

Contextual Info: bsc d Hi aaastos oqdhsi3 a h is ie g T - 3 I- Z / NPN Silicon RF Transistor SIEMENS AKT I EN GE SE LLS CH A F BF 507 o- °4513 BF 507 is an NPN silicon planar RF transistor in TO 92 plastic package 10 A 3 DIN 41868 . The transistor is particularly intended for use in VHF amplifiers, VHF mixers and VHF/UHF

automatic street light

Abstract: siemens r10 D1160-11
Contextual Info: SIEMENS AKTIENGESEL LSCHAF f aaasbos 47E » 0027 ^ s «sieg D 1160 Features: • hermetically sealed glass housing • vertical and horizontal light incidence • high power dissipation Application: • flame detectors in oil burners • automatic street lamp

SU312

Abstract: LN312GP LN427 482C LN220RP LN320GP LN420YP LN820WP
Contextual Info: PANASONIC INDL/ELEK -CIO k^aaass 001QÛ3S s 12E D Square Type T -4 1 -2 3 1.75mm X 7mm Series C haracte ristics: 1. Lighting surface 1 ,7 5 m m x 7m m rectangle 2. Lighting surface is formed at right angles with A.C. lead wire 3. H igh reliability, long life

Contextual Info: . BOUM A R /U H IT E TECHNOLOGY SDE D • 15^=10 W W n i t e Technology, Inc. D aaaS3n T il ■ Btil T 7 = . ^ MEMORY PRODUCTS PRELIMINARY WS-64M-XX 3.5" 8 8 .9 m m 1 1 2 3 4 DO D1 02 5 6 7 8 e 04 05 10 11 12 03 De 07 08 09 0)0 011 D12 D13 D14 016 E E CM

BFS20R

Abstract: IC mark A09 BFS 65 Q62702-F350 Q62702-F589 a10 transistor
Contextual Info: 2sc D m aaastas oooMb^s ? « s i e g r NPN Silicon RF Transistor BFS 20 BFS 20 R SIEMENS A K T I E N 6E SE LL SCH AF BFS 20 is an epitaxial NPN silicon planar RF transistor in TO 236 plastic package 23 A 3 DIN 41 869 , intended for use in film circuits. The transistor BFS 20 is marked "NA". It is also available upon request with changed

JW030A1-M

Abstract: B1048
Contextual Info: Datasheet • March 1997 0Q5a[]2b aaasaaM ?ms ■ microelectronics group Lucent Technologies Bell Labs Innovations JW030-Series Power Modules: 36 Vdc to 75 Vdc Inputs; 30 W Features ■ Small size: 61 mm x 58 mm x 12.7 mm 2.40 in. x 2.28 in. x 0.50 in. ■ Low output noise

transistor BD 141

Contextual Info: 25C D • aaasbos 0 0 0 4 3 3 7 3 ISIEG r TW 3-/7 ÖA337 PIMP Silicon Transistors D SIEMENS AKTIENGESELLSCHAF — BD 136 BD 138 BD 140 For AF d river and o u tp u t stages of m e d iu m p erform ance BD 136, BD 138, and BD 1 4 0 are epitaxial PNP silicon planar transistors in TO 126

mC88410

Contextual Info: Mo t o r o l a ^aaasESp SEMICONDUCTOR TECHNICAL DATA MC88410 Advance Information MC88410 Secondary Cache Controller This document contains the electrical characteristics, pin grid array pinouts, and mechanical drawings for the MC88410. It is divided into three distinct sections: MC88410 Prelim inary Electrical Specifications,

siemens profet overview

Abstract: transistor SMD t34 transistor sc 308 235L 410E2 BTS308 BTS410H2 E3043 E3062 E3062A
Contextual Info: SIEM EN S aaasbos ms 2 PROFET BTS 308 Smart Highside Power Switch Features • • • • • • • • • • • • • Overload protection Current limitation Short circuit protection Thermal shutdown Overvoltage protection including load dump Fast demagnetization ol inductive loads

49e hall

Abstract: relay songle 9ltc reley R6000 songle relay SR850 SR851 SR854 SR856
Contextual Info: T A I ilAN L I T O N E L E C T R O N IC LITEW^I 4TE ]> aaasb'is ggdmbom is a • t l i t POWER SEMICONDUCTORS SR850 thru SR856 VO LTA G E RANGE 5 0 to 6 0 0 Volts C U R R EN T 3.0 Amperes DO-201 AD FEATURES • Low cost ■2 1 0 • Low leakage • Low forward voltage drop

FLR-40SW

Abstract: marking L01 GP1L01 GP1L01F PT431 PT431F 250m3
Contextual Info: SHARP ELEK/ MELEC DIV 1SÉ Photointerrupters I f lia a v 'ia a Q G aaasi I GP1L01/G P1L01F r '- y / “ 7 3 High Sensitivity Type PhotointerruDter GP1L01/GP1 LOI F F eatu res — Unit : mm O u tlin e D im en sio n s High current transfer ratio GP1L01 CTR: MIN. 300%

Contextual Info: taiuan L I T E liton W electro nic m^e j> m aaasb^s LTC-9000 SERIES : 000402a 307 m t l i t 0.9" FOUR DIG IT LED CLOCK FREQUENCY DISPLAYS , 'T-H\-V3> FEATURES • 0.9 INCH 22.86mm H E IG H T C H A R A C T E R R E D OR G R E E N CO LO R. • COMMON C ATH O D E, COMMON A N O D E; D IR E C T ,

2073 transistor

Abstract: BFS20 siemens
Contextual Info: 2sc D m aaastas oooMb^s ? « s i e g r NPN Silicon RF Transistor BFS 20 BFS 20 R SIEMENS A K T I EN 6 ES EL LSC HA F B F S 2 0 is an epitaxial N P N silicon planar R F transistor in TO 2 3 6 plastic package 2 3 A 3 D IN 41 869 , intended for use in film circuits.

DTD08035

Contextual Info: FEATURES • 10-1500 MHz J ■ Detects from -25 dBm ■ 0.8 dB Hysteresis % X! M O D EL NO. DTD08035 Threshold Detector ■ Temperature Compensated ■ 14 Pin Flatpack - .20 GND 14 GND 13 TTL OUT 11 GND 12 GND 10 GND 9 o .0 75 NC GND R F IN 6 GND 7 GND -AAASIT R E S IS T O R

NJM2049

Abstract: 1251C
Contextual Info: 012 0 0 'Z 061 o vz 0 0 'S 0 6 ’t SUI 01 S0 82 A ui QZZ 002 081 Z R JÌ 39 os S* a /u id d ^ r í S í X i i ‘o ü ^ f m a m o 8 L ]n o H iN o o in d in o 6 9 ] ia v is 01 s H x o v aaasj ZI C ] H 0 1 S IW H 3 H 1 et z ] ONO c iñ o d rt¿ W O = s O i

514100aj-60

Abstract: HYB514100AJ-80 HYB514100A-80 514100AZ-60 4MX1 aram
Contextual Info: • aaasbos SIEME qqhqmqo r- e i s i e g SIEMENS A KTIEN G ESELLSCHAF • 4Mx 1-Bit Dynamic RAM M7E D T -¥ 6 -Z 3 -l5 HYB 514100A-60/-70/-80 Advance Information • 4194 304 words by 1-bit organization • 0 to 70 ‘C operating temperature • Fast access and cycle time

JW030C1-M

Abstract: JW030A-M JW030B1-M JW030B-M JW030A1-M JW030C-M JW030D-M JW030F-M 8749 ATI PJ65
Contextual Info: Datasheet • March 1997 0Q5a[]2b aaasaaM ?ms ■ microelectronics group Lucent Technologies Bell Labs Innovations JW030-Series Power Modules: 36 Vdc to 75 Vdc Inputs; 30 W Features ■ Small size: 61 mm x 58 mm x 12.7 mm 2.40 in. x 2.28 in. x 0.50 in. ■ Low output noise

MAF100

Abstract: diode 682 diode marking code 682 BA 682 BA682 DIODE ba 683 BA diode BA683 A723 682 diode
Contextual Info: I - QBE D • • aaaSbQS 0015731 7 M S I E G Silicon PIN Diode» 7"- • - Ô7 - /S BA 682 • BA 683 - SIEMENS AK TI EN G E S E L L S C H A F - Low-loss VHF band switch for TV tuners K o A n Type1 Marking Ordering code for versions in bulk

Zener diode ph bzx 550 24

Abstract: BZX48 zener diode ph c56 Zener Diode BZx 84 Diode Zener C 47 pH Zener diode ph bzx 148 ph zener diode BZX46 diode zener 6v2 BZX DIODE BZX
Contextual Info: S IC S G S-THG M SON D | 7 ^ 2 3 7 r ~ aaaS M S fl d - / f _ 59C 02458 ♦ T H O M S O N -C S F B Z X 4 6 C 2 V 7 — B Z X 4 6 C 1 1 0 DIVISION SEMICONDUCTEURS ZENER DIODES DIODES ZENER 500 m W herm etically sealed glass silicon Zener diodes o ffe rin g th e fo llo w in g advantages :

ba682

Abstract: diode marking code 682 BA683 MAF100
Contextual Info: I : übe t> : m aaasbos 0 0 1 5 7 3 1 • • ? « s ie g - 7 " - Ô 7 - /5 " Silicon PIN Diodes BA 682 .BA 683 - SIEMENS AKTIENGESELLSCHAF -• Low-loss VHF band switch for TV tuners K A Type1 Marking

EL1363VYC

Abstract: 1363VYC
Contextual Info: EVERLIGHT EVERLIGHT ELECTRONICS CO. -LTD MODEL • PACKAGE Device Humber: DLE-136-018 1363VYC NO: page: REV. U _ 1/2 ECN*- Lens Color DIMENSIONS: PART EL1363VYC NO CHIP Material AaAsP/GaP En itted Color Yellow Vater Clear N O T l£ S •* 1.All dimensions oro in ■ i111 motors.

7D471K

Abstract: Varistor 7D471K 7D431K Varistor 7D391K 7D561k 7D470K 7D391K 7D361k 7D391K varistor 7D201K
Contextual Info: TOBE 7 D Series VARISTOR Ä H ® Varistor Voltage aaasM fö •laijfeWfit Maximum Clamping Voltage Withstanding Surge Current 8/20 (is n.m Maximum Allowable Voltage t& SifS JfcfcK M Rated Wattage Pan No. V tliv A (V ) AC DC V I0A Hime 2times (V) (V) (V)

8d136

Abstract: transistor BD 141 transistor BD 110 BD140 BD13S transistor bd 138 transistor 136 138 140 transistor BD 140 BD 140 transistor Transistors bd 133
Contextual Info: 2sc D • aaasb o s 0004337 3 PIMP Silicon Transistors IS IE ß r ÖA337 /7 D* SIEMENS AKTIEN6ESELLSCHAF — BD 136 BD 138 BD 140 For A F d riv e r and o u tp u t stag es o f m e d iu m p erfo rm a n c e BD 1 3 6 , BD 138, and BD 1 4 0 are epitaxial PNP silicon planar transistors in TO 1 2 6

SIEMENS THYRISTOR

Abstract: SIEMENS THYRISTOR F04 BR303 Q68000-A3436 BR 303 pgp 15 g thyristor siemens
Contextual Info: 2SC D • aaasbDs qoqm 7 s ,ì ? Silicon Miniature Thyristor _ ¡SIEG BR 303 SIEMENS AKTIENGESELLSCHAF 9 B R 3 0 3 is a silicon planar thyristor in a T O -12 6 plastic package 12 A 3 DIN 41869, sheet 4 . The thyristor is especially suitable for use in switching power supplies as well as for