A9482296TG Search Results

FM28V100-TG

Abstract: FM28V100-TGTR tca 335 A
Contextual Info: FM28V100 1Mbit Bytewide F-RAM Memory Features 1Mbit Ferroelectric Nonvolatile RAM • Organized as 128Kx8  High Endurance 100 Trillion 1014 Read/Writes  NoDelay Writes  Page Mode Operation to 33MHz  Advanced High-Reliability Ferroelectric Process

Contextual Info: Pre-Production FM28V020 256Kbit Bytewide F-RAM Memory Features 256Kbit Ferroelectric Nonvolatile RAM • Organized as 32K x 8  1014 Read/Write Cycles  NoDelay Writes  Page Mode Operation  Advanced High-Reliability Ferroelectric Process Superior to Battery-backed SRAM Modules

Contextual Info: Pre-Production FM28V020 256Kbit Bytewide F-RAM Memory Features 256Kbit Ferroelectric Nonvolatile RAM • Organized as 32K x 8  1014 Read/Write Cycles  NoDelay Writes  Page Mode Operation  Advanced High-Reliability Ferroelectric Process Superior to Battery-backed SRAM Modules

FM28V100-TG

Abstract: RAMTRON
Contextual Info: FM28V100 1Mbit Bytewide F-RAM Memory Features 1Mbit Ferroelectric Nonvolatile RAM Organized as 128Kx8 High Endurance 100 Trillion 1014 Read/Writes NoDelay Writes Page Mode Operation to 33MHz Advanced High-Reliability Ferroelectric Process Superior to Battery-backed SRAM Modules

FM28V020-SG

Abstract: AEC-Q100-002 FM18L08 FM28V020 FM28V020-SGTR
Contextual Info: Pre-Production FM28V020 256Kbit Bytewide F-RAM Memory Features 256Kbit Ferroelectric Nonvolatile RAM • Organized as 32K x 8 • 1014 Read/Write Cycles • NoDelay Writes • Page Mode Operation to 33MHz • Advanced High-Reliability Ferroelectric Process

Contextual Info: FM28V100 1-Mbit Bytewide F-RAM Memory Features SRAM Replacement • JEDEC 128Kx8 SRAM pinout • 60 ns Access Time, 90 ns Cycle Time Low Power Operation • 2.0V – 3.6V Power Supply • Standby Current 90 µA typ • Active Current 7 mA (typ) Superior to Battery-backed SRAM Modules

FM28V020-TG

Abstract: AEC-Q100-002 FM18L08 FM28V020 FM28V020-SG FM28V020-SGTR FM28V020TG AEC-Q100-003
Contextual Info: Pre-Production FM28V020 256Kbit Bytewide F-RAM Memory Features 256Kbit Ferroelectric Nonvolatile RAM • Organized as 32K x 8  1014 Read/Write Cycles  NoDelay Writes  Page Mode Operation  Advanced High-Reliability Ferroelectric Process Superior to Battery-backed SRAM Modules

FM28V020-T

Contextual Info: FM28V020 256Kbit Bytewide F-RAM Memory Features 256Kbit Ferroelectric Nonvolatile RAM Organized as 32K x 8 1014 Read/Write Cycles NoDelay Writes Page Mode Operation Advanced High-Reliability Ferroelectric Process Superior to Battery-backed SRAM Modules

Contextual Info: FM28V100 1Mbit Bytewide F-RAM Memory Features 1Mbit Ferroelectric Nonvolatile RAM • Organized as 128Kx8  High Endurance 100 Trillion 1014 Read/Writes  NoDelay Writes  Page Mode Operation to 33MHz  Advanced High-Reliability Ferroelectric Process

FM28V100-TG

Abstract: AEC-Q100-002 FM18L08 FM20L08 FM28V100 tca 335 A
Contextual Info: Preliminary FM28V100 1Mbit Bytewide F-RAM Memory Features 1Mbit Ferroelectric Nonvolatile RAM • Organized as 128Kx8 • High Endurance 100 Trillion 1014 Read/Writes • NoDelay Writes • Page Mode Operation to 33MHz • Advanced High-Reliability Ferroelectric Process