A9 TRANSISTOR SMD Search Results

A7 SMD TRANSISTOR

Abstract: SMD A8 Transistor smd transistor A8 smd transistor A11 SMD Transistor A12 smd transistor a9 A12 SMD TRANSISTOR smd transistor A7 smd transistor A6 SMD a7 Transistor
Contextual Info: HS-6664RH TM Data Sheet August 2000 File Number Radiation Hardened 8kx8 CMOS PROM Features The Intersil HS-6664RH is a radiation hardened 64k CMOS • Electrically Screened to SMD # 5962-95626 [ /Title PROM, organized in an 8k word by 8-bit format. The chip is

smd code A9 3 pin transistor

Abstract: IC SMD MARKING CODE A9 bcm857bs2 MARKING CODE SMD IC smd ic marking A9 smd transistor marking A9 TRANSISTOR SMD MARKING CODES BC857BS BCM857BS transistor marking A9
Contextual Info: BCM857BS PNP matched double transistor; ∆hFE = 10 % Rev. 02 — 11 April 2005 Product data sheet 1. Product profile 1.1 General description PNP matched double transistor in a SOT363 SC-88 SMD plastic package. Matched version of BC857BS. The transistors are fully isolated internally.

HX6256

Abstract: D-10
Contextual Info: Military & Space Products 32K x 8 STATIC RAM—SOI HX6256 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.75 µm Process (Leff = 0.6 µm) • Listed On SMD#5962–95845 • Total Dose Hardness through 1x106 rad(SiO2)

Contextual Info: Honeywell Military & Space Products 32K x 8 STATIC RAM—SOI HX6256 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.75 p.m Process (Leff= 0.6 p,m) • Listed On SMD#5962-95845 • Total Dose Hardness through 1x106rad(Si02)

CDIP2-T28

Contextual Info: Honeywell Military & Space Products 32K x 8 STATIC RAM—SOI HX6256 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.75 |nm Process (Leff= 0.6 (xm) • Listed On SMD#5962-95845 • Total Dose Hardness through 1x106rad(Si02)

HX84050

Contextual Info: Military & Space Products 5 MEGABIT MEMORY MODULE HX84050 RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.75 µm Process (Leff = 0.6 µm) • Listed on SMD #5962-96840 6 • Total Dose Hardness through 1x10 rad (SiO2) • Neutron Hardness through 1x1014 cm-2

honeywell sn f10

Abstract: HX6356 A12 SMD TRANSISTOR Honeywell load cell
Contextual Info: Aerospace Electronics 32K x 8 STATIC RAM—SOI HX6356 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.75 µm Process (Leff = 0.6 µm) • Listed On SMD# 5962-95845 • Total Dose Hardness through 1x106 rad(SiO2) • Fast Read/Write Cycle Times

smd code A9 3 pin transistor

Abstract: smd transistor a9 NXP SMD TRANSISTOR MARKING CODE PBSS5612PA
Contextual Info: PBSS5612PA 12 V, 6 A PNP low VCEsat BISS transistor Rev. 01 — 7 May 2010 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with

Contextual Info: Honeywell Aerospace Electronics HX6356 32K x 8 STATIC RAM—SOI FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.75 |j.m Process (Left= 0.6 (im) • Listed On SMD# 5962-95845 • Total Dose Hardness through 1x106rad(S i02)

transistor smd hq

Contextual Info: f u H v i u S E M I C O N D U C T O R A R R HM-65642 IS 8K X 8 Asynchronous CMOS StStiC RAM January 1992 Features Description • Full CMOS Design The HM-65642 is a CMOS 8192 x 8-bit Static Random Access Memory. The pinout is the JEDEC 28 pin, 8-bit wide standard, which

TRANSISTOR SMD MARKING CODE BS t

Abstract: BCM857 BC857BS BC857BV BCM847BS BCM847BV BCM847DS BCM857BS BCM857BV BCM857DS
Contextual Info: BCM857BV; BCM857BS; BCM857DS PNP/PNP matched double transistors Rev. 05 — 27 June 2006 Product data sheet 1. Product profile 1.1 General description PNP/PNP matched double transistors in small Surface-Mounted Device SMD plastic packages. The transistors are fully isolated internally.

smd transistor A13

Abstract: A9 transistor SMD 29103BRA 29109BRA 8413201RA 8413201YA 8413203RA 8413203YA HM1-65262-9 HM1-65262B-9
Contextual Info: HM-65262 16K x 1 Asynchronous CMOS Static RAM March 1997 Features Description • Fast Access Time. . . . . . . . . . . . . . . . . . . . 70/85ns Max The HM-65262 is a CMOS 16384 x 1-bit Static Random Access Memory manufactured using the Intersil Advanced

5962-95845

Abstract: HX6356
Contextual Info: Honeywell Aerospace Electronics 32K x 8 STATIC RAM—SOI HX6356 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.75 |a,m Process (Leff= 0.6 |a,m) • Listed On SMD# 5962-95845 • Total Dose Hardness through 1x106rad(S i02)

HC6856

Contextual Info: Military & Space Products 32K x 8 STATIC RAM HC6856 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Bulk 0.8 µm Process Leff = 0.65 µm • Listed on SMD #5962-92153. Available as MIL-PRF-38535 QML Class Q and Class V • Total Dose Hardness through 1x106 rad(SiO2)

Contextual Info: Honeywell Military & Space Products Preliminary 128K x 8 STATIC RAM—Low Power SOI HLX6228 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.65 |im Low Power Process (Leff= 0.5 |am) • Read/Write Cycle Times < 25 ns (-55 to 125°C)

Contextual Info: Honeywell Military & Space Products Preliminary 32K x 8 STATIC RAM— Low Power SOI \ HLX6256 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.7 |u.nn Low Power Process (Leff= 0.55 |am) • Read/Write Cycle Times < 17 ns (Typical)

Contextual Info: Honeywell Military & Space Products 128K x 8 STATIC RAM—SOI HX6228 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.7 |im Process (Lef1= 0.55 ^m) • Read/Write Cycle Times < 16 ns (Typical) <2 5 ns (-55 to 125°C) • Total Dose Hardness through 1x106 rad(Si02)

900-197

Abstract: SMD transistor Marking 1x smd marking WMM
Contextual Info: Honeywell Aerospace Electronics A d van ce Inform ation 256K x 1 STATIC RAM—SOI HX6156 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.75 |j,m Process (Lefl = 0.6 |im) • Fast Read/Write Cycle Times < 15 ns (Typical)

900156

Abstract: HX6228 smd a7 transistor
Contextual Info: Honeywell Military & Space Products HX6228 128K x 8 STATIC RAM—SOI FEATURES RADIATION OTHER • Fabricated with RICMOS’“ IV Silicon on Insulator SOI 0.7 |im Process (LeN= 0.55 |im) • Read/Write Cycle Times < 16 ns (Typical) <25 ns (-55 to 125°C)

Transistors smd A7H

Abstract: HX6228
Contextual Info: Honeywell Military & Space Products 128K x 8 STATIC RAM—SOI HX6228 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.7 |a,m Process (Leff= 0.55 |a,m) • Read/Write Cycle Times < 16 ns (Typical) < 2 5 ns (-55 to 125°C)

hx6228

Abstract: MIL-PRF38535
Contextual Info: Military & Space Products 128K x 8 STATIC RAM—SOI HX6228 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.7 µm Process (Leff = 0.55 µm) • Read/Write Cycle Times ≤ 16 ns (Typical) ≤ 25 ns (-55 to 125°C) • Total Dose Hardness through 1x106 rad(SiO2)

smd diode marking JCt

Abstract: HX6156 smd transistor marking A14
Contextual Info: Aerospace Electronics Advance Information 256K x 1 STATIC RAM—SOI HX6156 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.75 µm Process (Leff = 0.6 µm) • Fast Read/Write Cycle Times ≤ 15 ns (Typical) ≤ 25 ns (-55 to 125°C)

D-10

Abstract: HLX6256 CDIP2-T28 nmos dynamic ram 6256
Contextual Info: Military & Space Products 32K x 8 STATIC RAM—Low Power SOI HLX6256 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.55 µm Low Power Process • Read/Write Cycle Times ≤ 17 ns (Typical) ≤ 25 ns (-55 to 125°C) • Total Dose Hardness through 1x106 rad(SiO2)

hlx6256

Abstract: D-10 nmos dynamic ram 6256 dynamic ram nmos 6256
Contextual Info: Military & Space Products 32K x 8 STATIC RAM—Low Power SOI HLX6256 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.55 µm Low Power Process • Read/Write Cycle Times ≤ 17 ns (Typical) ≤ 25 ns (-55 to 125°C) • Total Dose Hardness through 1x106 rad(SiO2)