A8A17 Search Results

29070* intel

Abstract: transistor w18 57 small
Contextual Info: 1.8 Volt Intel Wireless Flash Memory W18 28F320W18, 28F640W18, 28F128W18 Preliminary Datasheet Product Features High Performance — 70 ns Initial Access Speed — 14 ns Clock to Data Output Zero Wait-State Synchronous Burst Mode — 20 ns Page Mode Read Speed

M28R400C

Abstract: M28R400CB M28R400CT
Contextual Info: M28R400CT M28R400CB 4 Mbit 256Kb x16, Boot Block 1.8V Supply Flash Memory FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VDD = 1.65V to 2.2V Core Power Supply – VDDQ= 1.65V to 2.2V for Input/Output – VPP = 12V for fast Program (optional)

Contextual Info: HY51V16400A Series HYUNDAI 4M X 4-bit CMOS DRAM DESCRIPTION The HY51V16400A is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY51V16400A utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide

M28R400C

Abstract: M28R400CB M28R400CT
Contextual Info: M28R400CT M28R400CB 4 Mbit 256Kb x16, Boot Block 1.8V Supply Flash Memory FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VDD = 1.65V to 2.2V Core Power Supply – VDDQ= 1.65V to 2.2V for Input/Output ■ – VPP = 12V for fast Program (optional)

Contextual Info: W D _ I EDI7F32256C High Performance Eight Megabit Flash EEPROM E L E C T R O N IC D E S IG N S INC. 256Kx32 CMOS Flash EEPROM Module M iy illM iY Features The EDI7F32256C is a 5V-0nly In-System Programmable 256Kx32 bit C M O S Flash and Erasable Read Only Memory Module. Organized as

Contextual Info: M28R400CT M28R400CB 4 Mbit 256Kb x16, Boot Block 1.8V Supply Flash Memory PRODUCT PREVIEW • SUPPLY VOLTAGE – VDD = VDDQ = 1.65V to 2.2V for Program, Erase and Read – VPP = 12V for fast Program (optional) ■ ACCESS TIME FBGA – 1.65V to 2.2V: 120ns

Contextual Info: M28R400CT M28R400CB 4 Mbit 256Kb x16, Boot Block 1.8V Supply Flash Memory FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VDD = 1.65V to 2.2V Core Power Supply – VDDQ= 1.65V to 2.2V for Input/Output – VPP = 12V for fast Program (optional)

740-0007

Abstract: 29070* intel
Contextual Info: 1.8 Volt Intel Wireless Flash Memory W18 28F320W18, 28F640W18, 28F128W18 Preliminary Datasheet Product Features High Performance — 70 ns Initial Access Speed — 14 ns Clock to Data Output Zero Wait-State Synchronous Burst Mode — 20 ns Page Mode Read Speed

Contextual Info: INTNTL MICROELCTN g^E I H MflSGMS'J D Q O l O b J 4 • I M P T - 4 6 - / 3 IMP23208 IMP23408 23000 Series ROMS HIGH PERFORMANCE BYTE ORGANIZED ROMS Features • JED EC Standard Versions: IMP23208 IMP23408 32 Pin 32 Pin 2Meg 4Meg 262,144 word x 8 Bit) (524,288 word x 8 Bit)

Contextual Info: 256Kx8 ROM, 32Kx8 SRAM, 300/500ns, TSOP 30A183-00 A 256Kx8 FLASH/32Kx8 SRAM Combo Memory DP59CF232 DESCRIPTION: The DP59CF232 is a combination memory chip consist of 2M-bit Flash Memory organized as 256K words by 8 bits and a 256K-bit Static Random Access Memory

Contextual Info: AT29BV020 Features • • • • • Single Supply Voltage, Range 2.7V to 3.6V Single Supply for Read and Write Software Protected Programming Fast Read Access Time - 250 ns Low Power Dissipation 15 mA Active Current 20 |^A CMOS Standby Current Sector Program Operation

MC146805E2CL

Abstract: MC146805E2P CSM6800 MC1468C Scans-031 cpx-53 MC146805E2 MC146805E2CS MC146805E2S
Contextual Info: g MOTOROLA MC146805E2 Advance Information CMOS {HIGH PERFORMANCE SILICON T3ATEÏ 8-BIT MICROPROCESSOR UNIT T he MC146805E2 M icro p ro ce sso r U n it (M P U ) be lo ngs to th e M6805 Family o f M ic ro c o m p u te rs . T his 8 -b it fu lly s ta tic and expandable

Contextual Info: 2M FTE28C020 256K x 8 Bit 5 Volt, Byte Alterable EEPROM DESCRIPTION FEATURES . 150ns . AccessTime: Simple Byte and Page The Force FTE28C020 is a 256K x 8 EEPROM Hybrid built with a proprietary, high performance, floating gate CMOS technology. This device is a 5V

Contextual Info: M28R400CT M28R400CB 4 Mbit 256Kb x16, Boot Block 1.8V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VDD = 1.65V to 2.2V Core Power Supply – VDDQ= 1.65V to 2.2V for Input/Output – VPP = 12V for fast Program (optional)