A7E SEMICONDUCTOR Search Results

A1013-O

Contextual Info: O ld Semiconductor MSÌH51V257CL 32,768-Word x 8-Bit CM OS STATIC RAM DESCRIPTION The MSM51V257CL is a 32,768-word by 8-bit CMOS static RAM featuring 2.7 V to 3.6 V power supply operation and direct LVTTL input/output compatibility. Since the circuitry is completely

Contextual Info: O K I Semiconductor M 8M S12S7CL 32,768-Word x 8 -Bit CMOS STATIC RAM DESCR IPTIO N The MSM51257CL is a 32,768-word by 8-bit CMOS static RAM featuring a 5 V power supply operation and direct TI L input/output compatibility. Since the circuitry is completely static,

Contextual Info: O K I Semiconductor M8MS1V2S7CLP 32,768-Word x 8-Bit CM O S STATIC RAM DESCRIPTION The MSM51V257CLP is a 32,768-word by 8-bit CMOS static RAM featuring 3.0 V to 3.6 V pow er supply operation in the range of-40°C to 85°C and direct LVTTL in p u t/o u tp u t compatibility.

TSOP32-P-820-L

Abstract: 5 pin A13E
Contextual Info: OKI Semiconductor MSM82V1001LP 131,072-Word x 8-B it CMOS STATIC RAM DESCRIPTION The MSM52V1001LP is a 131,072-word by 8-bit CMOS static RAM featuring 3.0 V to 3.6 V power supply operation in the range of -40 "C to 85,'C and direct LVCMOS input/output compatibility.

TT104

Contextual Info: - i I O rdering n u m b e r:EN 3929A SANYO SEMICONDUCTOR CORP S3E D N0.3929A TTTTDTb OQlOlll blS M T S A J LC36257P, PL, PM, PML CMOS LSI SA\YO 256 Kbit 32768 x 8 CMOS Static RAM i PINOUT OVERVIEW LC36257P series devices are silicon-gate, CMOS static RAMs configured as 32 768 x 8 bits. They incorporate

Contextual Info: Philips Semiconductors Product Specification Octal bus transceiver/register; 3-state FEATURES • • • • • • Wide supply voltage range of 1.2 V to 3.6 V In accordance with JEDEC standard no. 8-1 A. Inputs accept voltages upto 5.5 V CMOS low power consumption

5 pin A13E

Abstract: A12E 7C166 Cypress 7C166 7c164-15 7C164-12 7C164 a13e
Contextual Info: CY7C164 CY7C166 Ì CYPRESS SEMICONDUCTOR 16Kx 4 Static RAM Features Functional Description • High speed — IS ns The CY7C164and CY7C166 are high-per­ formance CMOS static RAMs organized as 16,384 by 4 bits. Easy memory expan­ sion is provided by an active LOW chip en­

Contextual Info: P54/74FCT245/A/C P54/74PCT245/A/C P54/74FCT645/A/C (P54/74PCT645/A/C) Octal Bidirectional Transceivers with 3-State Outputs FEATURES ESD protection exceeds 2000V • Function, Pinout, and Drive Compatible with the FCT and F Logic Inputs and Outputs Interface Directly with TTL,

CY7C109

Abstract: 7C109-15
Contextual Info: CY7C109 128K x 8 Static RAM F e a tu r e s F u n c tio n a l D e s c r ip tio n • High speed The CY7C109 is a high-performance CM OS static RAM organized as 131,072 words by 8 bits. Easy memory expansion is provided by an active LOW chip enable C E i , an active H IG H chip enable (CE2),

Contextual Info: HN58V256A Series HN58V257A Series 32768-word x 8-bit Electrically Erasable and Programmable CMOS ROM HITACHI ADE-203-357 A Z Rev. 1.0 Apr. 12, 1996 Description The Hitachi HN58V256A and HN58V257A are a electrically erasable and programmable EEPROM 's organized as 32768-w ord x 8-bit, Em ploying advanced MNOS memory technology and CMOS

Contextual Info: HN58V256A Series HN58V257A Series 256k EEPROM 32-kword x 8-bit Ready/Busy and RES function (HN58V257A) HITACHI ADE-203-357D (Z) Rev. 4.0 Oct. 24, 1997 Description The Hitachi HN58V256A and HN58V257A are electrically erasable and programmable ROMs organized

Contextual Info: HN58V256A Series HN58V257A Series 256k EEPROM 32-kword x 8-bit Ready/Busy and RES function (HN58V257A) HITACHI ADE-203-357D (Z) Rev. 4.0 Oct. 24, 1997 Description The Hitachi HN58V256A and HN58V257A are electrically erasable and programmable ROMs organized

Contextual Info: SN54ACT3641 1 024 x 36 C L O C K E D FI RST-I N, F I R S T - O U T M E M O R Y S G B S 309-A U G U S T 1995 • • F r e e - R u n n i n g C L K A and C L K B Can Be • O u t p u t - R e a d y O R and A l m o s t - E m p t y (AE) Flags Synchronized by CLKB

Contextual Info: C L O C K E D FIRST-1 SN74ACT3631 512 x 36 FIRST- O UT M E M O R Y S C A S 2 4 6 F -A U G U S T 1 9 9 3 - REVISED SEPTEM B ER 1995 F r e e - R u n n i n g C L K A and C L K B Can Be A s y n c h r o n o u s or C o i n c i d e n t O u t p u t - R e a d y and A l m o s t - E m p t y Fl ags

ic vertical la 78141

Abstract: IC LA 78141 schematic LA 78141 tv application circuit 4116 ram tda 78141 TMS4500 LA 78141 VERTICAL 21L14 mitsubishi elevator circuit diagram 4464 64k dram
Contextual Info: MOS Memory Data Book 1984 Commercial and Military Specifications ♦ Texas In str u m en ts Alphanumeric Index, Table of Contents, Selection Guide Interchangeability Guide Glossary/Timing Conventions/Data Sheet Structure Dynamic RAM and Memory Support Devices

T35W

Abstract: transistor kt 606A 65e9 transistor sr 6863 D 2SC965 CS9011 sr1k diode KT850 TRANSISTOR st25a transistor 130001 8d
Contextual Info: NEW PRODUCTS BULLETIN SINGLE-ENDED MOLDED BRIDGES Fig. 1 International Rectifier expands its quality line of highly reliable molded \ bridges with the new 10DB series of 1 amp full-wave silicon bridge rectifiers. The single-ended, in-line configuration is suitable for PC board applications,

triac zd 607

Abstract: hep c6004 2sb504 2SC 968 NPN Transistor sje 607 motorola c6004 diode BY127 specifications K872 af118 Motorola Semiconductor hep c3806p
Contextual Info: & SEM ICO N DU CTO R This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Professional service techni­ cian. The information contained herein is based on an analysis of the published

sun hold RAS 0610

Abstract: oki Logic Motorola transistor 7144 MSC2304 M5M41000
Contextual Info: Selector Guide and Cross Reference CMOS Dynamic RAMs DRAM Modules Video RAMs Pseudo Static RAMs General MOS Static RAMs CMOS Fast Static RAMs CMOS Fast Static RAM Modules Application Specific MOS Static RAMs MOS EEPROM Military Products Reliability Information

TCA965 equivalent

Abstract: ULN2283 capacitor 473j 100n UAF771 transistor GDV 65A pbd352303 cm2716 TAA2761 TAA4761 ULN2401
Contextual Info: veryimpressivePrice. power drain. For the same low price astheTTL-compatible DG211. Very Impressive Performance. Low power, low source-drain ON resistance, low switching times, low current, low price. It all adds up to superstar performance for portable and battery-operated