A6A12 Search Results

28LV64

Abstract: 28LV64PC-4 hex55 DSA009112
Contextual Info: Turbo IC, Inc. 28LV64 LOW VOLTAGE CMOS 64K ELECTRICALLY ERASABLE PROGRAMMABLE ROM 8K X 8 BIT EEPROM FEATURES: • 200 ns Access Time • Automatic Page Write Operation Internal Control Timer Internal Data and Address Latches for 64 Bytes • Fast Write Cycle Times

IDT707278S/L

Abstract: A12L IDT707278
Contextual Info: HIGH-SPEED 32K x 16 BANK-SWITCHABLE DUAL-PORTED SRAM WITH EXTERNAL BANK SELECTS Features ◆ ◆ ◆ ◆ ◆ 32K x 16 Bank-Switchable Dual-Ported SRAM Architecture – Four independent 8K x 16 banks – 512 Kilobit of memory on chip Fast asynchronous address-to-data access time: 15ns

M28C64

Abstract: M28C64-A PDIP28 PLCC32
Contextual Info: M28C64 64 Kbit 8K x 8 Parallel EEPROM With Software Data Protection NOT FOR NEW DESIGN • Fast Access Time: – 90 ns at VCC=5 V for M28C64 and M28C64-A – 120 ns at VCC=3 V for M28C64-xxW ■ Single Supply Voltage: – 4.5 V to 5.5 V for M28C64 and M28C64-A

Contextual Info: SGS-THOMSON M28C64 llllM J ilL liM W Iie i 64K 8K x 8 PARALLEL EEPROM with SOFTWARE DATA PROTECTION • FAST ACCESS TIME: - 90 ns at 5V - 120ns at 3 V > SINGLE SUPPLY VOLTAGE: - 5V ± 10% for M28C64 - 2.7V to 3.6V for M28C64-xxW ■ LOW POWER CONSUMPTION

Contextual Info: 28C64 Timer E2 64K Electrically Erasable PROM October 1989 Features Description • CMOS Technology ■ Low Power • 50 mA Active • 150 pA Standby ■ Page Write Mode • 64 Byte Page • 160 us Average Byte Write Time SEEQ’s 28C64 is a CMOS 5V only, 8K x 8 Electrically

A12L

Abstract: IDT70V7278
Contextual Info: HIGH-SPEED 3.3V 32K x 16 BANK-SWITCHABLE DUAL-PORTED SRAM WITH EXTERNAL BANK SELECTS IDT70V7278S/L Features ◆ ◆ ◆ ◆ ◆ ◆ 32K x 16 Bank-Switchable Dual-Ported SRAM Architecture – Four independent 8K x 16 banks – 512 kilobit of memory on chip

M28C64

Abstract: M28C64-W PDIP28 PLCC32 S028
Contextual Info: SGS-THOMSON iyitEïïïïÂQDtES M 28C64 64K 8K x 8 PARALLEL EEPROM with SOFTW ARE DATA PRO TECTION • FAST ACCESS TIME: - 90 ns a t5 V - 120ns at 3V ■ SINGLE SUPPLY VOLTAGE: - 5V ± 10% for M28C64 - 2.7V to 3.6V for M28C64-xxW ■ LOW POWER CONSUMPTION

N4078

Abstract: A12L IDT70V7278 F4078
Contextual Info: HIGH-SPEED 3.3V 32K x 16 BANK-SWITCHABLE DUAL-PORTED SRAM WITH EXTERNAL BANK SELECTS IDT70V7278S/L Features ◆ ◆ ◆ ◆ ◆ ◆ 32K x 16 Bank-Switchable Dual-Ported SRAM Architecture – Four independent 8K x 16 banks – 512 kilobit of memory on chip

28C65 seeq

Abstract: M28C65 A6A12
Contextual Info: E/M28C65 Timer E2 64K Electrically Erasable PROM October 1989 Features Description • Military and Extended Temperature Range • - 5 5 ° C to + 125° C Operation Military . _ 40° C to + 85° C Operation (Extended) ■ ■ CMOS Technology Low Power • 60 mA Active

eeprom 28c65

Abstract: 28C65-250 28C65 28C65 seeq
Contextual Info: 28C65 Technology, Incorporated Timer E2 64K Electrically Erasable PROM August 1992 Features Military, Extended and Commercial Temperature Range • - 5 5 ° C to +125° C Operation Military • - 4 0 ° C t o +85° C Operation (Extended) • 0° C to +70° C Operation (Commercial)

M28LV64

Abstract: PDIP28 PLCC32 A6A12
Contextual Info: M28LV64 LOW VOLTAGE PARALLEL 64K 8K x 8 EEPROM WITH SOFTWARE DATA PROTECTION FAST ACCESS TIME: 200ns SINGLE LOW VOLTAGE OPERATION LOW POWER CONSUMPTION FAST WRITE CYCLE: – 64 Bytes Page Write Operation – Byte or Page Write Cycle: 3ms Max ENHANCED END OF WRITE DETECTION:

d0025

Contextual Info: XL28C64B EXEL Microelectronics, Inc. 8K X 8 CMOS Electrically Erasable PROM 6ms Nonvolatile Write Cycle 1 28 VCC A 12 2 27 WE A7 3 26 NC A7 3 26 NC A6 4 25 A8 A6 4 25 A8 A5 5 24 A9 A5 5 24 A9 A4 6 23 A11 A4 6 23 A11 A3 7 22 OE A3 7 22 OE A2 8 21 A10 A2 8 21

M28C64

Abstract: PDIP28 PLCC32
Contextual Info: M28C64 PARALLEL 64K 8K x 8 EEPROM WITH SOFTWARE DATA PROTECTION FAST ACCESS TIME: 90ns SINGLE 5V ± 10% SUPPLY VOLTAGE LOW POWER CONSUMPTION FAST WRITE CYCLE: – 64 Bytes Page Write Operation – Byte or Page Write Cycle: 3ms Max ENHANCED END OF WRITE DETECTION:

Contextual Info: M28C64 64 Kbit 8K x 8 Parallel EEPROM With Software Data Protection • Fast Access Time: – 90 ns at VCC=5 V for M28C64 and M28C64-A – 120 ns at VCC=3 V for M28C64-xxW ■ Single Supply Voltage: – 4.5 V to 5.5 V for M28C64 and M28C64-A – 2.7 V to 3.6 V for M28C64-xxW

Contextual Info: M39208 Single Chip 2 Mbit Flash and 64 Kbit Parallel EEPROM Memory PRELIMINARY DATA • 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPARATIONS ■ 100ns ACCESS TIME Flash and EEPROM blocks ■ WRITE, PROGRAM and ERASE STATUS BITS ■ CONCURRENT MODE (Read Flash while

Contextual Info: E/M28C64 Timer E2 64K Electrically Erasable PROM October 1989 Description Features m Military and Extended Temperature Range SEEO’s E/M28C64 is a CMOS 5Vonty, 8 K x8 Electrically Erasable Programmable Read Only Memory EEPROM . It is manufactured using SEEQ’s advanced 1.25 micron

Contextual Info: HIGH-SPEED 32K x 16 BANK-SWITCHABLE DUAL-PORTED SRAM WITH EXTERNAL BANK SELECTS Features ◆ ◆ ◆ ◆ ◆ ◆ 32K x 16 Bank-Switchable Dual-Ported SRAM Architecture – Four independent 8K x 16 banks – 512 Kilobit of memory on chip Fast asynchronous address-to-data access time: 15ns

seeq 28C64

Abstract: 8c643 28C64 EEPROM 28C64 plcc 28C64-250 28C64 military eeprom+28c64
Contextual Info: 28C64 Timer E2 64K Electrically Erasable PROM October 1989 Features Description • CMOS Technology ■ Low Power • 50 mA Active • 150 pA Standby ■ Page Write Mode • 64 Byte Page • 160 us Average Byte Write Time a Byte Write Mode ■ Write Cycle Completion Indication

28c64 military

Abstract: 28C64 plcc 28c64-200 28C64 28C64 EEPROM
Contextual Info: 28C64 Technology, Incorporated Timer E2 64K Electrically Erasable PROM July 1991 Features • P ow er U p/D own P rotection Circuitry UHItary, E xtended a n d C om m ercial Tem perature Range

M28C64

Abstract: M28C64-A PDIP28 PLCC32
Contextual Info: M28C64 64 Kbit 8K x 8 Parallel EEPROM With Software Data Protection • Fast Access Time: – 90 ns at VCC=5 V for M28C64 and M28C64-A – 120 ns at VCC=3 V for M28C64-xxW ■ Single Supply Voltage: – 4.5 V to 5.5 V for M28C64 and M28C64-A – 2.7 V to 3.6 V for M28C64-xxW

KM28C64-20

Abstract: KM28C65-25 KM28C64-25 SAMSUNG KM28C64 km28c64
Contextual Info: KM28C64/KM28C65 CMOS EEPROM 8 K x 8 Bit CMOS Electrically Erasable PROM FEATURES GENERAL DESCRIPTION • Operating Temperature Range — KM28C64/KM28C65: Commercial — KM28C64I/KM28C65I: Industrial • Simple Byte Write — Single TTL Level Write Signal — Latched Address and Data

M28C64

Abstract: M28C64-W PDIP28 PLCC32 S028
Contextual Info: SGS-THOMSON iyiEïïïïÂQDtES M 28C64 64K 8K x 8 PARALLEL EEPROM with SOFTW ARE DATA PRO TECTION • FAST ACCESS TIME: - 90 ns a t5 V - 120ns at 3V ■ SINGLE SUPPLY VOLTAGE: - 5V ± 10% for M28C64 - 2.7V to 3.6V for M28C64-xxW ■ LOW POWER CONSUMPTION

IDT707278S/L

Abstract: A12L IDT707278
Contextual Info: HIGH-SPEED 32K x 16 BANK-SWITCHABLE DUAL-PORTED SRAM WITH EXTERNAL BANK SELECTS IDT707278S/L Features ◆ ◆ ◆ ◆ ◆ ◆ 32K x 16 Bank-Switchable Dual-Ported SRAM Architecture – Four independent 8K x 16 banks – 512 Kilobit of memory on chip Fast asynchronous address-to-data access time: 15ns

Contextual Info: IMAGE UNAVAILABLE ^DDMt.^7 OSt.3170 TE? • XL28C64 Preliminary BLOCK DIAGRAM The sophisticated architecture of this device provides complete and automatic control of the nonvolatile write cycle eliminating the need for external timers, latches, high voltage generators and supplemental inadvertent