A5801 Search Results

allegro 6801

Abstract: GP-023-1A UCN5801A A5800 UCN4400A UCN4801A UCN5800A UCN5800L UCN5801EP UCN5801LW
Contextual Info: A5800 and A5801 BiMOS II Latched Drivers Last Time Buy These parts are in production but have been determined to be LAST TIME BUY. This classification indicates that the product is obsolete and notice has been given. Sale of this device is currently restricted to existing customer applications. The device should not be

UCN5801A

Abstract: A5800 A6801 UCN5800A UCN5800L UCN5801EP UCN5801LW GP-023-1A bsc-1 date sheet UCN4400
Contextual Info: A5800 and A5801 BiMOS II Latched Drivers Discontinued Product These parts are no longer in production The device should not be purchased for new design applications. Samples are no longer available. Date of status change: October 31, 2005 Recommended Substitutions:

RT3062

Abstract: BLY98 2SC931 1768-0815 2SC1002 2SC1003 2SC807 2SC830 ta6200 2SC685
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I

2N5576

Abstract: MT111 2N1828 MP1537 BUY28 B170026 2n1821 2N2535 2n2585 MP1552A
Contextual Info: SY M B O L S & C O D ES E X P L A IN E D S Y M B O L S & C O D E S COM MON TO M O R E T H A N O N E T E C H N I C A L S E C T IO N LIN E No. T Y P E No. ▼ — New Type + — Revised Specifications # - Non-JEDEC type manufactured outside u :s .a . t Switching type, also listed in Section 12

Contextual Info: A580-1802 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)180ö V(BR)CBO (V) I(C) Max. (A)10 Absolute Max. Power Diss. (W)175 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)135m° @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: A580-1605 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)160ö V(BR)CBO (V) I(C) Max. (A)10 Absolute Max. Power Diss. (W)175 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)120m° @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

1712-3510

Abstract: ink cartridge chip mmx black anodized aluminum plate a5731 A5724 Single Edge Contact (S.E.C.) Cartridge:
Contextual Info: Single Edge Contact S.E.C. Cartridge 16.1 16 Introduction Intel has introduced a variety of innovative package designs over the years: surface mount, small out-line, very thin package, multilayer molded plastic quad flatpacks (PQFP), and the Tape Carrier

ink cartridge chip

Abstract: A6151 243502-001 edge connectors a5810 outline of the heat slug for JEDEC A5804 connector cross reference diode databook A-6137
Contextual Info: Cartridge Packaging 16.1 16 Introduction Intel has introduced a variety of innovative package designs over the years: surface mount, small out-line, very thin package, multilayer molded plastic quad flatpacks PQFP , and the Tape Carrier Package (TCP) format. A recent configuration for optimum microprocessor performance is the

CA5801

Abstract: CA5801S MOTOROLA wideband hybrid
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA A5801 A5801S The RF Line Wideband Linear Am plifiers Motorola Preferred Devices Designed for amplifier applications in 50 ohm systems requiring wide bandwidth, low noise and low-distortion. This hybrid provides excellent gain stability with temperature and

Contextual Info: A580-1602 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)160ö V(BR)CBO (V) I(C) Max. (A)10 Absolute Max. Power Diss. (W)175 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)120m° @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

SDT1000

Abstract: mt1888 ST54 2n16 DT6104 Stc1094 1205t MHT8012 usaf520es070 usaf521es071
Contextual Info: SYMBOLS & CODES EXPLAINED 7. " N ” Channel - SILICON FIELD E F F E C T TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T

MP2143

Abstract: MP2145 2n463 MP2143A MT63 2N1029 2n2585 ASZ16 MP1534 transistor 2SB235
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I

AD166

Abstract: 2SB123 transistor 2N1434 ASZ16 LT5085
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 1 9 GERMANIUM N PN 110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C MAX. 1 hFE II MIN. MAX Pc T6TT

SDT1000

Abstract: DT6104 RCA508 1205t MJ8400 MD-21 XT2C M021 857m 25T80
Contextual Info: SYMBOLS & CODES EXPLAINED 7. " N ” Channel - SILICON FIELD E F F E C T TRANSISTORS 8. GERMANIUM P N P 1 9 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T

B170008

Abstract: 113003 B170002 B170003 B170007 A580-0403 2n2585 B170004 SDT8111 B170005
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 1 9 GERMANIUM N PN 110. SILICON PNP 11. SILICON NPN High Power Transistors LIN E No. k I B H H TYPE No. AB SO iL O T E M AX. RATIIN G S Ä 2 5 C I I MIN. M A X Pc T 6 T T

2N2128

Abstract: T4 0660 2N5577 2N5579 MD38
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 1 9 GERMANIUM N PN 110. SILICON PNP 11. SILICON NPN High Power Transistors LIN E No. t * - 40°c 45°C # - 5 0 °C 6 0 °C 0 - §- k I B H H TYPE No. AB SO iL O T E M AX. RATIIN G S Ä 2 5 C

A400M

Abstract: ASZ16 2N1841 113005 2n2585 MP1534 2SC23 2SC24 2SC437 2SC438
Contextual Info: SY M B O L S & C O D ES E X P L A IN E D 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT

mitsumi pbt 13

Abstract: CONNECTOR a58 mitsumi ccm-a58
Contextual Info: MITSUMI 2mmピッチ圧着タイプ2ピースコネクタ 2mm Density Crimp Type 2-Piece Connectors CCM-A58, CPM-A59 Series Connectors 特長／FEATURES 1. CCM-A58CPM-A59シリーズは、圧着タイプの2ピー スコネクタです。CCM-A58は、電線圧着タイプのソケッ

transistor TF78

Abstract: AC178 ASZ16 RT150B 113003 2N2134 2s882 2SA231 GFT26 TRANSISTOR at202
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I

2SC102 transistor

Abstract: 2SC102 transistor 2Sc102 1763-0625 micro transistor 1203 2SC519 2SC520 TK30556 TK30557 TK30558
Contextual Info: SY M B O L S & C O D ES E X P L A IN E D 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 1 9 GERMANIUM N PN 110. SILICON PNP 11. SILICON NPN High Power Transistors LIN E No. k I B H H TYPE No. AB SO iL O T E M AX. RATIIN G S Ä 2 5 C

ZT2015

Abstract: SDT1000 MHT8012 857m A400M Stc1094 1205t B170026 0805T
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T

Ba 1714

Abstract: 8A53
Contextual Info: 12345678 123456278391AB713 CD3EF331234562783933 33 ! 3 3 2#3 1 21 >5157811"67817"15455,1 1111BCD17"1 ?@D1 3BCDA141 21 ':1#4"1 21 581#31C1447B1*11#31 21 C5"1C45781978B15711D171

SN7441

Abstract: 54175 TFK 404 MM1402a equivalent SD300 N74141 SN7401 3 BB 4 SO 5 CON 6 RAY 7 CC 8 SI 9 RB 10 RG 11 VE
Contextual Info: NUMERICAL INDEX FUNCTIONAL INDEX SALES OFFICES Copyright 1974 S IG N E T IC S C O R P O R A T IO N Signetics Corporation reserves the right to make changes in the products contained in this book in order to improve design or performance and to supply the best possible product.

Contextual Info: A580-1603 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)160ö V(BR)CBO (V) I(C) Max. (A)10 Absolute Max. Power Diss. (W)175 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)120m° @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)