A16A0 Search Results

M95M01-D

Abstract: M95M01-DF marking M95 m01d
Contextual Info: M95M01-DF M95M01-R 1-Mbit serial SPI bus EEPROM Datasheet − production data Features • Compatible with the Serial Peripheral Interface SPI bus ■ Memory array – 1 Mb (128 Kbytes) of EEPROM – Page size: 256 bytes SO8 (MN) 150 mil width ■ Write

mc 6871 a

Contextual Info: TMS320VC5410A Fixed-Point Digital Signal Processor Data Manual Literature Number: SPRS139F November 2000 – Revised May 2004 PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not

Contextual Info: PDM31034 PRELIMINARY 1 Megabit 3.3V Static RAM 128K x 8-Bit Revolutionary Pinout Description Features n High-speed access times Com’l: 9, 10, 12, 15 and 20 ns Ind’l.: 12, 15 and 20 ns Automotive: 15 and 20 ns n Low power operation typical - PDM31034SA

Contextual Info: PDM31024LL PRELIMINARY 128K x 8-Bit Low Power 3.3 Volt Description Features n High-speed access times Com’l: 70, 85 and 100ns n Low power operation typical - PDM31024LL Active: 50 mW Standby: 2µW The PDM31024LL is a very low power CMOS static RAM organized as 131,072 x 8 bits. Writing to this

Contextual Info: m IS61SF12832 128K x 32 SYNCHRONOUS FLOW-THROUGH STATIC RAM FEATURES • Fast access times: 7.5 ns, 8 ns, 8.5 ns, 10 ns, and 11 ns Internal self-timed write cycle Individual Byte Write Control and Global Write Clock controlled, registered address, data inputs and control signals

Contextual Info: ISSI IS29F010 1 MEGABIT 128K x 8-bit CMOS, 5.0V Only Sectored Flash Memory p r e l im in a r y O c t o b e r 1998 FEATURES • High-performance CMOS - 35, 45, 55, 70, and 90 ns max. access time • Single 5V-only power supply - 5V ± 10% for Read, Program, and Erase

R36W

Abstract: lnk303 samsung ltn LD3130 CRC10 MXT3010 R44-R47 M 8012 R54-R55 t9354
Contextual Info: MXT3010 Reference Manual Version 4.1 Order Number: 100108-05 October 1999 Copyright c 1999 by Maker Communications, Inc. All rights reserved. Printed in the United States of America. The information in this document is believed to be correct, however, the

EDI8L24129V

Contextual Info: EDI8L24129V 128Kx24 SRAM 3.3 Volt FEATURES The EDI8L24129VxxBC is a 3.3V, three megabit SRAM constructed with three 128Kx8 die mounted on a multi-layer laminate substrate. With 10 to 15ns access times, x24 width and a 3.3V operating voltage, the EDI8L24129V is ideal for creating a single chip memory solution

Contextual Info: _ EDI7F82048C ^E D I Electronic Designs Inc. High Performance Sixteen Megabit Flash EEPROM 2Megx8 CMOS Flash EEPROM Module Features The EDI7F82048C is a 5V-0nly In-System Programmable and Erasable Read Only Memory Module. Organized as 1Megx8 bits, the module contains sixteen 128Kx8 Flash

AM188ES-33VC

Abstract: IA186ES IA186ES-PQF100I IA186ES-PTQ100I IA188ES IA188ES-PQF100I IA188ES-PTQ100I DIMENSIONS pqfp 100
Contextual Info: innovASIC IA186ES/IA188ES 8/16-BIT Microcontrollers Preliminary Data Sheet Copyright  2003  IA186ES/IA188ES Preliminary Data Sheet 8/16-BIT MICROCONTROLLERS Data Sheet Contents FEATURES .4

Contextual Info: Multi-Purpose Flash MPF + SRAM ComboMemory SST32VF201 / SST32VF202 / SST32VF401 / SST32VF402 SST32VF201 / 202 / 401 / 402SRAM (x16) ComboMemories Advance Information FEATURES: • MPF + SRAM ComboMemory – SST32VF201: 128K x16 Flash + 64K x16 SRAM – SST32VF202: 128K x16 Flash + 128K x16 SRAM

Contextual Info: M95M01-R 1 Mbit Serial SPI bus EEPROM with high speed clock Preliminary Data Features • Compatible with SPI bus serial interface Positive Clock SPI modes ■ Single supply voltage: 1.8 V to 5.5 V ■ High speed – 5 MHz clock rate – 5 ms Write time

Y52 h 85c

Abstract: ECG 1729 1DF28 1/y148 amplifier datasheet tca 761 HD66522 1DD01 Y148 y158 0F076
Contextual Info: HD66522 160-Channel Column Driver with Internal Bit-Map RAM for Reflective Color Display and Grayscale Display ADE-207-302(Z) '99.9 Rev. 0.0 Description The HD66522 is a column driver for liquid crystal dot-matrix graphic display system. This LSI incorporates 160 liquid crystal drive circuit and a 160 * 240 * 2-bit bit-mapped RAM, which is suitable for

JJ7N

Contextual Info: IS61SF12836 v 128K x 36 SYNCHRONOUS FLOW-THROUGH STATIC RAM FEATURES • Fast access times: 7.5 ns, 8 ns, 8.5 ns, 11 ns • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and control • Pentium or linear burst sequence control

Contextual Info: 8 Megabit FlashBank Memory FEATURES: • Single 3.0-Volt Read and Write Operations • Separate Memory Banks by Address Space • Superior Reliability – Endurance: Pr el im in ar y – Bank1: 6Mbit 384K x 16 / 768K x 8 Flash – Bank2: 2Mbit (128K x 16 / 256K x 8) Flash

BEST BIOS PROGRAMMING AND DATA FOR EEPROM

Abstract: date code Sanyo semiconductor DTS13
Contextual Info: Preliminary Specifications CMOS LSI LE28CV1001DT/DTS-13/15 1M-Bit 128k x 8 Page Mode EEPROM Features Single 3.3-Volt Read and Write Operations CMOS Flash EEPROM Technology Page-write Endurance Cycles: 104 10 Years Data Retention Low Power Consumption: Active Current: 20 mA (Max.)

FE3020

Abstract: FE3030 Western Digital microprocessor 80286 Word Size FE3010 FE3001A FE3031 8254 cascading FE3000A 80386SX
Contextual Info: WESTERN DIGIT AL CORP SIE D • T?iaEEÔ OQOSÔS4 O l - S Z '3 3 - ìS ■ Advance Information FE3010B AT Peripheral Control Device □ □ □ □ □ 100% hardware and software compatible to the IBM* AT* 15 interrupt channels 3 timer channels 7 DMA channels

STK17TA8

Abstract: STK17TA8-R
Contextual Info: STK17TA8 128Kx8 Autostore nvSRAM With Real-Time Clock FEATURES DESCRIPTION • nvSRAM Combined With Integrated Real-Time Clock Functions RTC, Watchdog Timer, Clock Alarm, Power Monitor The Simtek STK17TA8 combines a 1Mb non-volatile static RAM (nvSRAM) with a full-featured real-time

SST32HF164-90-4E-EK

Abstract: SST32HF162 SST32HF164 SST32HF802 SW-5520
Contextual Info: Multi-Purpose Flash MPF + SRAM ComboMemory SST32HF802 / SST32HF162 / SST32HF164 SST32HF802 / 162 / 164MPF (x16) + 1Mb SRAM (x16) ComboMemories Data Sheet FEATURES: • MPF + SRAM ComboMemory – SST32HF802: 512K x16 Flash + 128K x16 SRAM – SST32HF162: 1M x16 Flash + 128K x16 SRAM

TA 7644 BF

Abstract: cmos power TCP 8108 NEXUS FLASH ERASE oasis TCP 8108 32-PIN F01A SST31LH041 830049
Contextual Info: 4 Megabit Flash + 1 Megabit SRAM ComboMemory SST31LH041 Advance Information FEATURES: • Organized as 512K x 8 Flash + 128K x 8 SRAM • Latched Address and Data for Flash • Single 3.0-3.6V Read and Write Operations • Flash Fast Sector Erase and Byte Program:

TMS320C5416 DSP

Abstract: ic hm 2007 internal block diagram ,Architecture TMS320C5416 instruction set of TMS320C5416 tms320c5416 mcbsp example tms320c5416 enhanced peripherals
Contextual Info: TMS320VC5410A Fixed-Point Digital Signal Processor Data Manual Literature Number: SPRS139H November 2000 – Revised June 2006 PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not

IS61LP12832

Abstract: IS61LP12832-166B IS61LP12832-166TQ IS61LP12832-200B IS61LP12832-200TQ IS61LP12836
Contextual Info: IS61LP12832 IS61LP12836 ISSI 128K x 32, 128K x 36 SYNCHRONOUS PIPELINED STATIC RAM FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and control • Linear burst sequence control using MODE input

C5000

Abstract: TMS320C5000 TMS320VC5410A TMS320VC541
Contextual Info: TMS320VC5410A Fixed-Point Digital Signal Processor Data Manual Literature Number: SPRS139H November 2000 – Revised June 2006 PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not

IS29F010-70PL

Abstract: IS29F010
Contextual Info: IS29F010 IS29F010 1 MEGABIT 128K x 8-bit CMOS, 5.0V Only Sectored Flash Memory PRELIMINARY OCTOBER 1998 FEATURES • High-performance CMOS – 35, 45, 55, 70, and 90 ns max. access time • Single 5V-only power supply – 5V ± 10% for Read, Program, and Erase