A15A11 Search Results

K4T51043QB-GCCC

Abstract: K4T51043QB-GCE6 K4T51043QB-GLE6
Contextual Info: Preliminary DDR2 SDRAM 512Mb B-die DDR2 SDRAM 512Mb B-die DDR2 SDRAM Specification Version 0.91 September 2003 Rev. 0.91 Sep. 2003 Page 1 of 38 Preliminary DDR2 SDRAM 512Mb B-die DDR2 SDRAM Contents 1. Key Feature 2. Package Pinout/Mechnical Dimension & Addressing

CS10

Abstract: PQFP44 PSD211R ZPSD211R ZPSD211RV psd3xx
Contextual Info: PSD211R ZPSD211R, ZPSD211RV Low Cost Field Programmable Microcontroller Peripherals FEATURES SUMMARY • Single Supply Voltage: Figure 1. Packages – 5 V±10% for PSD211R and ZPSD211R – 2.7 to 5.5 V for ZPSD211RV ■ Up to 256 Kbit of EPROM ■ Input Latches

z84c50

Contextual Info: PRELIMINARY PRODUCT SPECIFICATION < £ S L O E Z84C50 J une 1989 Z80 RAM 80 Z80 CPU/2K SRAM FEATURES • Z80 CPU 2K Static RAM ■ Powerful set of 158 instructions ■ Wait State Generator for external memory ■ ■ Low power consumption TBD Typ (5V.10 MHz under RUN mode)

IS25C08

Abstract: IS25C16 X101 X110 IS25C08-2ZLI
Contextual Info: IS25C08 IS25C16 ISSI 8K-BIT/16K-BIT SPI SERIAL ELECTRICALLY ERASABLE PROM Preliminary Information APRIL 2006 FEATURES DESCRIPTION • Serial Peripheral Interface SPI Compatible — Supports SPI Modes 0 (0,0) and 3 (1,1) • Wide-voltage Operation — Vcc = 1.8V to 5.5V

Contextual Info: IS25C08 IS25C16 ISSI 8,192/16,384-BIT SPI SERIAL ELECTRICALLY ERASABLE PROM Advanced Information November 2003 FEATURES DESCRIPTION • Serial Peripheral Interface SPI Compatible — Supports SPI Modes 0 (0,0) and 3 (1,1) • Low power CMOS — Active current less than 3.0 mA (2.5V)

Contextual Info: • ^ 4 1 7 4 3 000b732 Oflb Advance Information X84F016/008 16K/8K MPS Serial Flash Micro Port Saver SerialFlash with Block Lock™ Protection FEATURES • Direct Interface to Micros — Eliminates I/O port requirements — No interface glue logic required

Contextual Info: <£ZiIi3G Pr e l im in a r y p r o d u c t S p ec ific a tio n Z84C50 J une 1989 Z80 RAM 80 Z80 CPU/2K SRAM FEATURES • Z80 CPU 2K Static RAM ■ Powerful set of 158 instructions ■ Wait State Generator for external memory ■ Power Interrupt function _

Contextual Info: HY5PS12421 L F HY5PS12821(L)F HY5PS121621(L)F 512Mb DDR2 SDRAM HY5PS12421(L)F HY5PS12821(L)F HY5PS121621(L)F This document is a general product description and is subject to change without notice. Hynix Electronics does not assume any responsibility for use of circuits described. No patent licenses are implied.

Contextual Info: HY5PS1G431 L F HY5PS1G831(L)F 1Gb DDR2 SDRAM HY5PS1G431(L)F HY5PS1G831(L)F This document is a general product description and is subject to change without notice. Hynix Electronics does not assume any responsibility for use of circuits described. No patent licenses are implied.

Contextual Info: HY5PS12421 L F HY5PS12821(L)F HY5PS121621(L)F 512Mb DDR2 SDRAM HY5PS12421(L)F HY5PS12821(L)F HY5PS121621(L)F This document is a general product description and is subject to change without notice. Hynix Electronics does not assume any responsibility for use of circuits described. No patent licenses are implied.

HY5PS121621BFP

Abstract: HY5PS121621B HY5PS121621BFP-2
Contextual Info: HY5PS121621BFP 512Mb 32Mx16 gDDR2 SDRAM HY5PS121621BFP This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied.

Contextual Info: HY5PS121621BFP 512Mb 32Mx16 DDR2 SDRAM HY5PS121621BFP This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied.

Contextual Info: HY5PS121621BFP 512Mb 32Mx16 gDDR2 SDRAM HY5PS121621BFP This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied.

HY5PS561621AFP-33

Contextual Info: HY5PS561621AF P 256Mb(16Mx16) gDDR2 SDRAM HY5PS561621AF(P) This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied.

Contextual Info: HY5PS561621AFP 256Mb 16Mx16 gDDR2 SDRAM HY5PS561621AFP This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied.

psd211

Contextual Info: PSD211RFamily PSD211R ZPSD211R ZPSD211RV Low Còsi Microcontroller Peripherals February, 1999 47280 Kato Road, Fremont, California 94538 Tel: 510-656-5400 Fax: 510-657-8495 800-TEAM-WSI 800-832-6974 Web Site: waferscale.com E-mail: info@waferscale.com Return to Main Menu

Contextual Info: ZILOG INC LIE D TRfiMOMB DDEMfl'IS H E «ZIL PRELIMINARY PRODUCT SPECIFICATION < $ 3 1 1 3 5 Z84C50 June 1989 Z80 RAM 80 Z80 CPU/2K SRAM FEATURES • Z80 CPU 2K Static RAM ■ Powerful set of 158 instructions ■ Wait State Generator for external memory ■ Power Interrupt function

IS25C08

Abstract: IS25C16 X101 X110
Contextual Info: IS25C08 IS25C16 ISSI 8,192/16,384-BIT SPI SERIAL ELECTRICALLY ERASABLE PROM Advanced Information February 2004 FEATURES DESCRIPTION • Serial Peripheral Interface SPI Compatible — Supports SPI Modes 0 (0,0) and 3 (1,1) • Low power CMOS — Active current less than 3.0 mA (2.5V)

6d40 engine diagram

Abstract: 27mhz remote control receiver ic rx 2b circuit FO HD64404BT sony g14 q2 colour tv receiver H669 Renesas C2L4 Delta Electronics dps 750 vba EQ7 SONY TVR 4621 sony g14 colour tv receiver
Contextual Info: To all our customers Information regarding change of names mentioned within this document, to Renesas Technology Corp. On April 1st 2003 the following semiconductor operations were transferred to Renesas Technology Corporation: operations covering microcomputer, logic,

Contextual Info: HY5PS56421 L F HY5PS56821(L)F HY5PS561621(L)F 256Mb DDR2 SDRAM HY5PS56421(L)F HY5PS56821(L)F HY5PS561621(L)F This document is a general product description and is subject to change without notice. Hynix Electronics does not assume any responsibility for use of circuits described. No patent licenses are implied.

MC6829CL

Abstract: m6809
Contextual Info: M O TO R O LA Advance Information HMOS MEMORY MANAGEMENT UNIT HIGH DENSITY N-CHANNEL, SILICON-GATEI The principle function of the MC6829 Memory Management Unit (MMU is to expand the address space of the MC6809from 64K bytes to a maximum of 2 Megabytes. Each MMU is capable o f handling four d if­

IS25C08

Abstract: IS25C16 X101 X110 IS25C08-2GLI
Contextual Info: IS25C08 IS25C16 ISSI 8K-BIT/16K-BIT SPI SERIAL ELECTRICALLY ERASABLE PROM Advanced Information January 2005 FEATURES DESCRIPTION • Serial Peripheral Interface SPI Compatible — Supports SPI Modes 0 (0,0) and 3 (1,1) • Low power CMOS — Active current less than 3.0 mA (2.5V)

Contextual Info: IS25C16 16K-BIT SPI SERIAL ELECTRICALLY ERASABLE PROM FEATURES • Serial Peripheral Interface SPI Compatible — Supports SPI Modes 0 (0,0) and 3 (1,1) • Wide-voltage Operation — Vcc = 1.8V to 5.5V • Low power CMOS — Operating current less than 1 mA (1.8V)

xx30

Abstract: SST39LF100 SST39VF100 VF100
Contextual Info: 1 Mbit 64K x16 Multi-Purpose Flash SST39LF100 / SST39VF100 Data Sheet SST39LF/VF1003.0 & 2.7V 1Mb (x16) MPF memories FEATURES: • Organized as 64K x16 • Single Voltage Read and Write Operations – 3.0-3.6V for SST39LF100 – 2.7-3.6V for SST39VF100 • Superior Reliability