A150 CT Search Results

BR47

Abstract: BR-62 ER1840-136 A510 A102F A-561
Contextual Info: F R MIL-PRF-39010 MI A s or ct du In ER SERIES L I TA R Y PP ROVE D Established Reliability Inductors ER1641 Physical Parameters and Environmental Characteristics Inductance Range, µH Core Material Sleeve Length, Inches Millimeters Diameter, Inches Millimeters

W77E468

Abstract: 100-PIN 80C52 MCS-51 error detection
Contextual Info: Preliminary W77E468 8 BIT MICROCONTROLLER Table of Contents-GENERAL DESCRIPTION . 2 FEATURES. 2

transistor a561

Abstract: A561 transistor transistor A431 A1R8 B2R2 a3r6 A431 br39 transistor ma a330 AR10
Contextual Info: ER Series MIL-PRF-39010 MI L I TA R Y A PP ED ROV RF INDUCTORS Established Reliability Inductors Physical Parameters and Environmental Characteristics ER1641 ER1840 ER1025 ER1537 MIL-PRF- MIL-PRF- MIL-PRF- MIL-PRF- MIL-PRF- MIL-PRF- MIL-PRF- MIL-PRF- MIL-PRF- MIL-PRF39010/1

A1R8

Abstract: transistor a561 A561 transistor AR24 br51 transistor a3r6 A431 transistor A431 MIL-PRF-39010 A330
Contextual Info: ER Series MIL-PRF-39010 MI A L I TA R Y PP ROVE D Established Reliability Inductors RF INDUCTORS ER1641 Physical Parameters and Environmental Characteristics Inductance Range, µH Core Material Sleeve Length, Inches Millimeters Diameter, Inches Millimeters

Z86193

Abstract: Z86295 Z86C95 Z86C9500ZUSP064 Z86C9501ZUSP064 MICROCONTROLLER 16 bit cmos 16 bit counter
Contextual Info: Mass Storage Mass Storage MULTI Block Diagram Zilog Superintegration Pr oducts Guide SERVO MAILBOX UART DIV UART DIV CPU DSP DAC PWM DAC PWM 48 RAM CLOCK ADC SPI ADC SPI SEARCH MERGE A15-A0 P2 P2 P3 MULTI A15-0 P2 Z86C95 Device MULTI UART DIV P3 CPU Z86295

2N3789

Abstract: SDT3802
Contextual Info: industrial power transistors 130 SILICON PNP TRANSISTORS 15 Amp BREAKDOWN VOLTAGES TYPE NUMBER CASE SIZE VeB SDT3801 SDT3802 SDT3803 SDT3804 2N3789 2N3790 2N3791 2N3792 TO-66 TO-66 TO-66 TO-66 TO-3 TO-3 TO-3 TO-3 -60 -80 -60 -80 -60 -80 -60 -80 VeE VEB -60

A5 KNA

Contextual Info: W29C102 f t inbond V n iU/ Electronics Corp. 64K x 16 CMOS FLASH MEMORY GENERAL DESCRIPTION The W29C1Q2 is a 1-megabit, 5-volt only CMOS flash memory organized as 64K x 16 bits. The device can be programmed and erased in-system with a standard 5V power supply. A 12-volt Vpp is

Contextual Info: THYRISTOR MODULE AK55GB40/80 UL!E76102 M Power Thyristor Module A K 5 5 G B series are designed for various rectifier circuits and power controls. For your circuit application, following internal connections and wide voltage ratings up to 1,600 V are available, and electrically isolated mounting base make your

5SDD 54N4000

Abstract: D150 Rectifier A150 B150 C150 D150 VF150 VF25
Contextual Info: VRSM IF AV M IF(RMS) IFSM VF0 rF = = = = = = 4000 5200 8200 85x103 0.8 0.086 Rectifier Diode V A A A V mΩ Ω 5SDD 54N4000 Doc. No. 5SYA1171-00 Dec. 03 • Patented free-floating silicon technology • Very low on-state losses • Optimum power handling capability

50N5500

Abstract: A150 B150 C150 D150 VF150 VF25
Contextual Info: VRSM IF AV M IF(RMS) IFSM VF0 rF = = = = = = 5500 4700 7390 73x103 0.8 0.107 Rectifier Diode V A A A V mW 5SDD 50N5500 Doc. No. 5SYA1169-00 Sep. 04 • Patented free-floating silicon technology · Very low on-state losses · Optimum power handling capability

Contextual Info: W29C040 512K X 8 CMOS FLASH MEMORY G E N E R A L D E S C R IP T IO N The W29C040 is a 4-megabit, 5-volt only CMOS page mode EEPROM organized as 512K x 8 bits. The device can be written erased and programmed in-system with a standard 5V power supply. A 12-volt VPP is not required. The unique cell architecture ot the W29C040 results in tast write (erase/

T-con

Abstract: 27E512
Contextual Info: Preliminary W77E468 'r^\„v,5A 1 Electronics Corp. 8 BIT MICROCONTROLLER Table of Contents— GENERAL D E S C R IP TIO N .2

teledyne relay 412 screening

Abstract: Teledyne 412D TRANSISTOR j412 412DD-26 412T-12 J412 412D j114dd teledyne 412DD ER114D
Contextual Info: SERIES ESTABLISHED RELIABILITY ESTABLISHED RELIABILITY TO-5 RELAYS 412 DPDT SERIES DESIGNATION RELAY TYPE 412 DPDT basic relay 412D DPDT relay with internal diode for coil suppression DPDT relay with internal diodes for coil transient suppression and polarity

Contextual Info: I p| |"0 f f Q tÌ O D Q I Provisional Data Sheet No. PD-9.339E IOR Rectifier JANTX2N6768 HEXFET POWER MOSFET JANTXV2N6768 [REF:MIL-PRF-19500/543] [GENERIC :IRF350] N -C H A N N E L 400 Volt, 0.300Q HEXFET H E X F E T technology is the key to International

A114D

Abstract: A114F SE708 DT230B DT230F STB-568 GER4007 a114n DZ800 MA1703
Contextual Info: SILICON S IG N A L DIODES 100 M A T Y P E S Continued U BV @ 100//A Part Number (V) (nA) MA1703 40 50 MA1704 25 Vf @ 25°C Max. M ax. @ V r (V) 30 20 100 Co @ lF(mA) (V) 50 1 .00 30 1.00 Package O utline No. S p e cificatio n Sh eet No. @ OV trr (pif) (nsec)

Contextual Info: Preliminary W29N102C 'fifty ttüXP" iriecfcionics Corp. 64K x 16 CMOS 3.3V FLASH MEMORY G E N E R A L D E S C R IP T IO N The W 29N102C is a 1-megabit, 3.3-volt only CMOS tlash memory organized as 64K x 16 bits. The device can be programmed and erased in-system with a standard 3.3V power supply. A 12-volt Vpp is

Contextual Info: W29C010 i Electronics Corp. 128K x 8 CMOS FLASH MEMORY GENERAL DESCRIPTION The W29C010 is a 1-megabit, 5-volt only CMOS flash memory organized as 128K x 8 bits. The device can be programmed and erased in-system with a standard 5V power supply. A 12-volt Vpp is

Contextual Info: MODELS IM-2A-ER and IM-2B-ER Inductors M ilitary/Established Reliability MIL-C-39010 Qualified, M 39010/08/09 FE A T U R E S MIL-C-39010/08 Phenolic Core MIL-C-39010/09 (Iron Core) ELE C T R IC A L S P E C IF IC A T IO N S D E N S IT Y S P E C IF IC A T IO N S

Contextual Info: Preliminary W29L102 64K X 16 CMOS FLASH MEMORY G ENERAL DESCRIPTION The W29L102 is a 1-megabit, 3.3-volt only CMOS tlash memory organized as 64K x 16 bits. The device can be programmed and erased in-system with a standard 3.3V power supply. A 12-volt Vpp is

Contextual Info: CENTIGRID ESTABLISHED RELIABILITY RELAYS SERIES 134 ESTABLISHED RELIABILITY SENSITIVE DPDT SERIES DESIGNATION RELAY TYPE 134 DPDT basic relay 134D DPDT relay with internal diode for coil transient suppression DPDT relay with internal diodes for coil transient suppression and polarity

teledyne 422DD-12

Abstract: teledyne relay 172
Contextual Info: SERIES ESTABLISHED RELIABILITY MAGNETIC-LATCHING ESTABLISHED RELIABILITY TO-5 RELAYS 420/422 DPDT SERIES DESIGNATION 420/422 420D/422D 420DD/422DD RELAY TYPE DPDT basic relay DPDT relay with internal diode for coil transient suppression DPDT relay with internal diodes for coil transient suppression and polarity

Contextual Info: M O DELS IM -4x-E R an d IM -6x-E R In d u c to rs DALE M ilitary/Established Reliability MIL-C-39010 Qualified, M 39010/04/05/06/07 FE A T U R E S • M IL-C-39010/04 Phenolic Core • MIL-C-39010/05 (Iron Core) • M IL-C-39010/06 (Phenolic Core) • M IL-C-39010/07 (Iron Core)

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT ¿¿PD23C8001EJ 8M-BIT MASK-PROGRAMMABLE ROM 1M-WORD BY 8-BIT Description The /XPD23C8001 EJ is a 8,388,608 bits 1,048,576 w ords by 8 bits m ask-program m able ROM. The active levels of OE (Output Enable Input) can be selected with m ask-option.

TC514258

Abstract: 4256AP 58ab AZ-70
Contextual Info: TOSHIBA MOS MEMORY PRODUCTS TC514258AP/AJ/AZ-70, TC514258AP/AJ/AZ-80 TC514258AP/AJ/AZ-10 DESCRIPTION The TC514258AP/AJ/AZ is the new generation dynamic RAM organized 262,144 words by 4 bits. The TC514258AP/AJ/AZ utilizes TOSHIBA'S CMOS Silicon gate process technology as