A12X Search Results

Contextual Info: Characteristics and dimensions of terminals Part number 02092.111.007 Claw terminal Specification ring type Material CuZn Form Single form Single part X Packing unit 500 / piece Section area 0.50-2.50 mm2 DIN 46236 Form A Nominal A12x2.3 size Material thickness

R30-01

Abstract: 100-C R3001
Contextual Info: SPECIFICATION DIMENSIONS CONTACT CONFIGURATION 1 5 .9 ± 0 .3 '1.8 01.6-s 1 1 .0 ± 0 .5 r3.0±0.1 1 FORM A NOMINAL VOLTAGE 12V DC COIL RESISTANCE 130 ± 1 0 % T L VOLTAGE DROP 3 m V /A ALLOWABLE LOAD CURRENT 2 0 A res@ 12V DC PULL IN VOLTAGE 7 .2 V MAX AT 2 5 'C

PD43256B

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT PD43256B-X 256K-BIT CMOS STATIC RAM 32K-WORD BY 8-BIT EXTENDED TEMPERATURE OPERATION Description The μPD43256B-X is a high speed, low power, and 262,144 bits 32,768 words by 8 bits CMOS static RAM. The μPD43256B-X is an extended-operating-temperature version of the μPD43256B (X version : TA = –25 to +85°C).

IDT70P254

Abstract: IDT70P244 AN 7148 idt70p264 A13L A13X 70P25
Contextual Info: Š VERY LOW POWER 1.8V 16K/8K/4K x 16 DUAL-PORT STATIC RAM Features ◆ ◆ ◆ ◆ ◆ ◆ True Dual-Ported memory cells which allow simultaneous reads of the same memory location High-speed access – Industrial: 40/55ns max. Low-power operation IDT70P264/254/244L

BY100

Abstract: Power Diode BY100 A12L IDT70P247
Contextual Info: VERY LOW POWER 1.8V 8K/4K x 16 DUAL-PORT STATIC RAM IDT70P257/247L Features ◆ ◆ ◆ ◆ ◆ True Dual-Ported memory cells which allow simultaneous reads of the same memory location High-speed access – Industrial: 55ns max. Low-power operation IDT70P257/247L

70P24

Abstract: 70P25
Contextual Info: Š VERY LOW POWER 1.8V 8K/4K x 16 DUAL-PORT STATIC RAM Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ True Dual-Ported memory cells which allow simultaneous reads of the same memory location High-speed access – Industrial: 55ns max. Low-power operation IDT70P258/248L

TSOP8

Abstract: A 3055 PD43256B PD43256B-X PD43256BGW-85X-9JL-A
Contextual Info: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社

D43256

Abstract: PD43256B-AX
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD43256B-X 256K-BIT CMOS STATIC RAM 32K-WORD BY 8-BIT EXTENDED TEMPERATURE OPERATION Description The µPD43256B-X is a high speed, low power, and 262, 144 bits 32,768 words by 8 bits CMOS static RAM. This device is an extended-operating-temperature version of the µPD43256B (X version, –25 to +85 °C). And A and B

RXMS1

Abstract: RXMVB RADSS RK 637-104E 637-300E relay rd3 wiring diagram three phase distribution panel schematic relay busbar one line diagram transformer sf6 circuit breaker
Contextual Info: RADSS 1MRK 505 003-BEN Busbar protection Changed since March 1992 Replaces 1M D B 0 5 00 3-E N D ata subject to change without notice ABB Network Partner SE 81 02 58 (SE 81 02 60) Features Application (SE 88 05 68) • Percentage restraint bus differential relay

jacks footprint

Contextual Info: Compu-shield” Modular Jacks 67 and 62 Series Shielded Offer maximum protection from EMI Jacks are available in right-angle, vertical and cable-mount bulkhead styles. Consult factory for options. Low-profile jacks offer a variety of flange options Available in 6-, 8-, IO-, 15, and

BY100

Abstract: 70P24 70P25
Contextual Info: VERY LOW POWER 1.8V 8K/4K x 16 DUAL-PORT STATIC RAM Features ◆ ◆ ◆ ◆ ◆ ◆ True Dual-Ported memory cells which allow simultaneous reads of the same memory location High-speed access – Industrial: 55ns max. Low-power operation IDT70P258/248L Active: 27mW (typ.)

70P24

Abstract: 70P25
Contextual Info: VERY LOW POWER 1.8V 8K/4K x 16 DUAL-PORT STATIC RAM Features ◆ ◆ ◆ ◆ ◆ ◆ True Dual-Ported memory cells which allow simultaneous reads of the same memory location High-speed access – Industrial: 55ns max. Low-power operation IDT70P258/248L Active: 27mW (typ.)

BY100

Abstract: BY100-1 70P24 70P25
Contextual Info: VERY LOW POWER 1.8V 8K/4K x 16 DUAL-PORT STATIC RAM Features u True Dual-Ported memory cells which allow simultaneous reads of the same memory location u High-speed access – Industrial: 55ns max. u Low-power operation IDT70P257/247L Active: 27mW (typ.)

A5R J6

Abstract: BY100 twz c7 marking code A12l 70P25 marking o9x 34BF 70P35 70P24
Contextual Info: HIGH-SPEED 1.8V 8/4K x 18 DUAL-PORT 8/4K x 16 DUAL-PORT STATIC RAM Features ◆ ◆ ◆ ◆ ◆ True Dual-Ported memory cells which allow simultaneous reads of the same memory location High-speed access IDT70P35/34L IDT70P25/24L – Commercial: 20/25ns (max.)

Contextual Info: Relais statiques montés sur panneau 4 e gen RE ST S I LA E U Q I AT L'expert mondial de la technologie commutation statique S Custom Sensors & Technologies CST est un spécialiste des produits de détection, contrôle et mouvement. Au travers de ses marques BEI Kimco, BEI

Contextual Info: Panel Mount DataSheet Series 1T 120 VAC • Ratings from 10A to 40A @ 24-140 VAC • SCR output for heavy industrial loads • Zero turn-on or instantaneous turn-on outputs • UL/CSA/VDE Approved, CE Compliant to EN60950-1 • Improved SEMS screw and washer

Contextual Info: NMATM SERIES IsD^àtBd 1W D ualO ulputSurfece M o u n t featu res CECC 0 0 8 0 2 R efbw £ 8 0 ^ □ D u a lls o la te d 0 u tp u t n lkVDC Isolation n SO E P a c k a g e Style □ Efficiency to 8 0% □ Pow e rD en sity 1 .4 0W /cm 3 □ 5V & 12V In p u t

A1205GD2U

Abstract: A1205HD1U A1205HD2U A1209HD1U A1212HD1U A1212HD2U A1215HD1U A1215HD2U A0512
Contextual Info: SENSITRON SEMICONDUCTOR A - 1W/2W Series TECHNICAL DATA DATA SHEET 1114, REV. - DC-DC Converters Fixed Input, 6000V Isolation, Unregulated, Single/Dual Output FEATURES: • • • • • • • • • • • • Isolation Voltage: Isolation Resistance 1 :

Contextual Info: Š VERY LOW POWER 1.8V 16K/8K/4K x 16 DUAL-PORT STATIC RAM Features ◆ ◆ ◆ ◆ ◆ ◆ True Dual-Ported memory cells which allow simultaneous reads of the same memory location High-speed access – Industrial: 40/55ns max. Low-power operation IDT70P264/254/244L

PD43256B

Abstract: PD43256B-X
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT PD43256B-X 256K-BIT CMOS STATIC RAM 32K-WORD BY 8-BIT EXTENDED TEMPERATURE OPERATION Description The μPD43256B-X is a high speed, low power, and 262,144 bits 32,768 words by 8 bits CMOS static RAM. The μPD43256B-X is an extended-operating-temperature version of the μPD43256B (X version : TA = –25 to +85°C).

diode BY100

Abstract: marking 642 marking a0l A12L IDT70P24 IDT70P34 marking A3L 70P35 70P24 70P25
Contextual Info: HIGH-SPEED 1.8V 8/4K x 18 DUAL-PORT 8/4K x 16 DUAL-PORT STATIC RAM Features ◆ ◆ ◆ ◆ ◆ True Dual-Ported memory cells which allow simultaneous reads of the same memory location High-speed access IDT70P35/34L IDT70P25/24L – Commercial: 20/25ns (max.)

A1209GD1U

Abstract: A0512GD1U A0505GD1U A2415
Contextual Info: SENSITRON SEMICONDUCTOR A - 1W/2W Series TECHNICAL DATA DATA SHEET 1114, REV. - DC-DC Converters Fixed Input, 6000V Isolation, Unregulated, Single/Dual Output FEATURES: • • • • • • • • • • • • Isolation Voltage: Isolation Resistance 1 :

Contextual Info: SENSITRON SEMICONDUCTOR A - 1W/2W Series TECHNICAL DATA DATA SHEET 1114, REV. - DC-DC Converters Fixed Input, 6000V Isolation, Unregulated, Single/Dual Output FEATURES: • • • • • • • • • • • • Isolation Voltage: Isolation Resistance 1 :

AM 5888

Abstract: SAMSUNG mcp Reliability SAMSUNG MCP PD23C32000A B12 nec diode cypress flash 370 SUNRISE TSOP 12 20 a85x E40/16/12 pd442
Contextual Info: Through the latest technological advancements, we're developing new memory products to meet present and future needs. NEC Electronics is a market leader in memory products, continuously delivering products with the latest cutting-edge technology. Today, a new demand is