A104 DIODE Search Results

a104

Abstract: heatsink calculation DD435N KM17 A104 diode sechspuls-bruckenschaltung
Contextual Info: N Datenblatt / Data sheet Netz-Dioden-Modul Rectifier Diode Module DD435N DD435N Elektrische Eigenschaften / Electrical properties Kenndaten Höchstzulässige Werte / Maximum rated values Periodische Spitzensperrspannung repetitive peak reverse voltages Elektrische Eigenschaften T

DD435N

Abstract: KM17
Contextual Info: N Datenblatt / Data sheet Netz-Dioden-Modul Rectifier Diode Module DD435N DD435N Elektrische Eigenschaften / Electrical properties Kenndaten Höchstzulässige Werte / Maximum rated values Periodische Spitzensperrspannung repetitive peak reverse voltages Elektrische Eigenschaften T

DD435N

Abstract: KM17 KM17 equivalent
Contextual Info: N Datenblatt / Data sheet Netz-Dioden-Modul Rectifier Diode Module DD435N DD435N Elektrische Eigenschaften / Electrical properties Kenndaten Höchstzulässige Werte / Maximum rated values Periodische Spitzensperrspannung repetitive peak reverse voltages Elektrische Eigenschaften T

a106 diode

Abstract: diode A106 ADA750F 178289-5 ada1000f-24 A-102 AC264V ADA750F-24 ada750 A102
Contextual Info: Instruction Manual Unit type 1 2 3 Function A-102 1.1 Input voltage range A-102 1.2 Inrush current limiting A-102 1.3 Overcurrent protection A-102 1.4 Peakcurrent protection A-102 1.5 Thermal protection A-102 1.6 Overvoltage protection A-102 1.7 Output voltage adjustment range

MIP0224SY

Abstract: 2SK1937 t201 transformer M51995AFP mip0224 ZUP-200 Nemic-Lambda CN d1fl20u 0134G ZUP20
Contextual Info: ZUP-200 SERIES RELIABILITY DATA DWG: 1A548-79-01 QA APPD APPD CHK DWG ç> ^ ^ A WR/llMAQciifltfi,Do^ovv PeUl c.y. ’hi/ ji j ci ‘I &3. S/ ÜOV-l-Lô<i fjn/~ &NEMIC-LAMBDA LTD. INDEX 1.MTBF; Calculated Value of MTBF R-1 2.Component Derating R-2-12 3.Main Components Temperature Rise

M2805

Abstract: APM2805 APM2805QA JESD-22 MO-229 ANPEC c125t
Contextual Info: APM2805QA P-Channel Enhancement Mode MOSFET with Schottky Diode Pin Description Features C8 MOSFET • C7 D6 D5 -20V/-2.6A, RDS ON = 85mΩ(typ.) @ VGS= -4.5V A1 RDS(ON)= 120mΩ(typ.) @ VGS= -2.5V • • A2 S3 G4 Super High Dense Cell Design Reliable and Rugged

apm28

Abstract: A104 diode
Contextual Info: APM2804QA P-Channel Enhancement Mode MOSFET with Schottky Diode Pin Description Features C8 MOSFET • C7 D6 D5 -20V/-2.6A, RDS ON = 85mΩ(typ.) @ VGS= -4.5V A1 RDS(ON)= 120mΩ(typ.) @ VGS= -2.5V • • A2 S3 G4 Super High Dense Cell Design Reliable and Rugged

APM2807QB

Abstract: ANPEC APM2807 B102 JESD-22 J-STD-020D
Contextual Info: APM2807QB P-Channel Enhancement Mode MOSFET with Schottky Diode Features Pin Description MOSFET • C G A S NC D -20V/-2.3A, RDS ON = 85mΩ(typ.) @ VGS= -4.5V D C RDS(ON)= 120mΩ(typ.) @ VGS= -2.5V • • • Super High Dense Cell Design A NC SBD G S (3)

Contextual Info: 190 Series 50,000 Count True RMS DMMs 190 Series General Specifications & Accessories ACCESSORIES CO, Combustion & Combustibles Refrigeration Leak Detectors Digital Manometers Temperature Instruments IAQ: Air Flow/Humidity Digital Multimeters & Clamp-on Meters

transistor a115

Contextual Info: APS0601 High Speed Photosensor for Optocoupler Features General Description • 3.3V/5.5V Dual Supply Voltages • Low Power Consumption The APS0601 are optically coupled gates that combine a GaAsP light emitting diode and an integrated high gain • High Speed: 10MBd Typical

ANPEC marking date code

Abstract: ANPEC JESD 51-7, ambient measurement APX9141
Contextual Info: APX9141 High Sensitivity Hall Effect Sensor IC with Reverse Voltage Protection Features • • • • • • • • General Description On-Chip Reverse Voltage Protection The APX9141 is an integrated Hall Effect Sensor IC de- On-Chip Hall Sensor signed for electric commutation of DC brushless motor

apm30

Contextual Info: APM3015NFP N-Channel Enhancement Mode MOSFET Features • Pin Description SD 30V/50A, G RDS ON =12mΩ (typ.) @ VGS=10V RDS(ON)=17mΩ (typ.) @ VGS=4.5V • • • Super High Dense Cell Design Top View of TO-220 -FP Reliable and Rugged Lead Free and Green Devices Available

apm9946

Abstract: apm*9946 APM9946J ANPEC A102 A104 A108 B102 JESD-22
Contextual Info: APM9946J Dual N-Channel Enhancement Mode MOSFET Features • Pin Description 60V/6A, RDS ON =38mΩ (Typ.) @ VGS = 10V RDS(ON) =55mΩ (Typ.) @ VGS = 4.5V • • • Super High Dense Cell Design Reliable and Rugged Top View of DIP−8 Lead Free and Green Devices Available

Contextual Info: APM6003NFP N-Channel Enhancement Mode MOSFET Features • Pin Description SD 60V/20A, G RDS ON =38mΩ (typ.) @ VGS=10V RDS(ON)=53mΩ (typ.) @ VGS=4.5V • • Reliable and Rugged Top View of TO-220-FP Lead Free and Green Devices Available D (RoHS Compliant)

Contextual Info: APM3015NF N-Channel Enhancement Mode MOSFET Features • Pin Description SD 30V/40A, G RDS ON =12mΩ (typ.) @ VGS=10V RDS(ON)=17mΩ (typ.) @ VGS=4.5V • • • Super High Dense Cell Design Top View of TO-220 Reliable and Rugged Lead Free and Green Devices Available

APM1102P

Abstract: apm1102pf
Contextual Info: APM1102PF P-Channel Enhancement Mode MOSFET Features • Pin Description SD -100V/-30A, G RDS ON =33mΩ (Typ.) @ VGS=-10V RDS(ON)=39mΩ (Typ.) @ VGS=-4.5V • • Reliable and Rugged Top View of TO-220 Lead Free and Green Devices Available (RoHS Compliant)

APM1102P

Abstract: APM1102PF apm11
Contextual Info: APM1102PF P-Channel Enhancement Mode MOSFET Features • Pin Description SD -100V/-30A, G RDS ON =33mΩ (Typ.) @ VGS=-10V RDS(ON)=39mΩ (Typ.) @ VGS=-4.5V • • Reliable and Rugged Top View of TO-220 Lead Free and Green Devices Available (RoHS Compliant)

APM6006NFP

Abstract: APM6006 21M025 APM60
Contextual Info: APM6006NFP N-Channel Enhancement Mode MOSFET Features • Pin Description SD 60V/34A, G RDS ON =21mΩ (typ.) @ VGS=10V RDS(ON)=29mΩ (typ.) @ VGS=4.5V • • Reliable and Rugged Top View of TO-220-FP Lead Free and Green Devices Available D (RoHS Compliant)

APM60

Contextual Info: APM6005NF N-Channel Enhancement Mode MOSFET Features • Pin Description SD 60V/80A, G RDS ON =4.5mΩ (typ.) @ VGS=10V • • • Avalanche Rated Reliable and Rugged Top View of TO-220 Lead Free and Green Devices Available (RoHS Compliant) D Applications

APM3109

Abstract: APM3109NU MOSFET N 30V 30A 252 A102 A104 A108 B102 JESD-22 J-STD-020D
Contextual Info: APM3109NU N-Channel Enhancement Mode MOSFET Features • Pin Description 30V/50A, D RDS ON =7.5mΩ (typ.) @ VGS=10V G RDS(ON)=12mΩ (typ.) @ VGS=4.5V • • • • S Super High Dense Cell Design Top View of TO-252-3 Reliable and Rugged D Avalanche Rated

APM9926C

Abstract: M9926 GEM2928 A108 B102 JESD-22 APM9926CCG APM9926CC
Contextual Info: APM9926CCG Dual N-Channel Enhancement Mode MOSFET Features • Pin Description D2 D2 D1 D1 20V/5A , RDS ON =25mΩ(typ.) @ VGS=4.5V RDS(ON)=34mΩ(typ.) @ VGS=2.5V • • • G2 S2 G1 S1 Super High Dense Cell Design Reliable and Rugged Lead Free and Green Devices Available

APM2605

Abstract: APM2605C JESD-22 J-STD-020D MARKING A104 SOT AAAX
Contextual Info: APM2605C P-Channel Enhancement Mode MOSFET Features • Pin Description -30V/-4.5A, D D S RDS ON =43mΩ(typ.) @ VGS=10V RDS(ON)=60mΩ(typ.) @ VGS=4.5V • • • Super High Dense Cell Design D D G Top View of SOT-23-6 Reliable and Rugged Lead Free and Green Devices Available

APM9935

Abstract: APM9935K B102 JESD-22
Contextual Info: APM9935K Dual P-Channel Enhancement Mode MOSFET Features • Pin Description D1 D1 D2 D2 -20V/-6A, RDS ON =30mΩ(typ.) @ VGS=-4.5V RDS(ON)=38mΩ(typ.) @ VGS=-2.5V • • • S1 G1 S2 G2 Super High Dense Cell Design Reliable and Rugged Top View of SOP − 8

APM1104P

Abstract: 20A, 50V, P-Channel APM1104PG apm11
Contextual Info: APM1104PG P-Channel Enhancement Mode MOSFET Features • Pin Description -100V/-90A, RDS ON =15mΩ (Typ.) @ VGS=-10V RDS(ON)=18mΩ (Typ.) @ VGS=-4.5V • • D G S Reliable and Rugged Top View of TO-263-3 Lead Free and Green Devices Available (RoHS Compliant)