A10 7JF Search Results

Contextual Info: UPD4516821G5-A12-7JF IL08D C-MOS 16 M 1 M WORD x 8-BIT x 2 -BIT DRAM —TOP VIEW— 18 1 VDD GND 44 19 20 D0 2 43 D7 21 24 3 GND GND 42 25 26 D1 4 41 D6 27 28 5 VDD VDD 40 29 17 D2 6 7 GND D3 8 39 D5 GND 38 37 D4 16 32 31 12 14 9 VDD VDD 36 13 33 10 NC NC 35

Contextual Info: UPD4516161G5-A12-7JF IL08D C-MOS 16 M 512 K WORD x 16-BIT x 2 -BIT DRAM —TOP VIEW— 21 1 VDD GND 50 22 23 D0 2 49 D15 24 27 D1 3 48 D14 28 29 4 GND GND 47 30 31 D2 5 46 D13 32 20 D3 6 7 VDD D4 8 45 D12 VDD 44 43 D11 19 35 34 15 17 D5 9 42 D10 18 14 10 GND

zilog z80

Abstract: pa67c 33A1S
Contextual Info: Programmable Peripheral PSD3XX Family Field-Programmable Microcontroller Peripheral Key Features □ Single Chip Programmable Peripheral for Microcontroller-based Applications □ Wide Operating Voltage Range — L-Versions: 3.0 to 5.5 volts — Others: 4.5 to 5.5 volts

Contextual Info: DATA SHEET NEC / MOS INTEGRATED CIRCUIT _ _ _ _ _ _ _ //¿PD4516421-PC, 4516821-PC, 4516161-PC 16M-bit Synchronous DRAM for PC SDRAM Lite D e s c rip tio n The //PD4516421-PC, 4516821-PC, 4516161-PC are high-speed 16,777,216-bit synchronous dynamic randomaccess memories, organized as 2,097,152 x 4 x 2, 1,048,576 x 8 * 2 and 524,288 x 16 x 2 word x bit x bank ,

Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT 16:39 µPD23C16000L 16M-BIT MASK-PROGRAMMABLE ROM 2M-WORD BY 8-BIT BYTE MODE / 1M-WORD BY 16-BIT(WORD MODE) Description The µPD23C16000L is a 16,777,216 bits mask-programmable ROM. The word organization is selectable (BYTE

g0424

Abstract: transistor B42 350
Contextual Info: bM2752S 00’ 23bb 35Ü H N E C E / / M OS IN TEG RA TED C IR C U IT JU P D 42S 16 1 7 0 ,4 2 S 1 7 1 7 0 ,4 2 S 1 8 1 7 0 16 M B IT D Y N A M IC RAM (FA S T PA G E M O D E & B Y T E W R IT E M ODE -PRELIMINARY-DESCRIPTIO N The NEC #PD42S16170, // PD42S17170 and ¿¿PD42S18170 are 1 048 576 words by 16 bits dynamic

LE347

Abstract: toba Q 0265 R HS 8180 42S18180
Contextual Info: L427S2S DQ4 2 4 M4 b 70 • NECE MOS INTEGRATED CIRCUIT ju P D 4 2 S 1 6 1 8 0 ,4 2 S 1 7 1 8 0 ,4 2 S 1 8 1 8 0 16 M BIT D Y N A M IC RAM FAST PAGE M O D E & BYTE R E A D /W R IT E M ODE - P R E LIM IN A R Y -D ESCRIPTIO N

D4242

Abstract: IC 741 cn
Contextual Info: b 4 E 7 5 2 S DOMEMOS T 2 D B i N E C E MOS INTEGRATED C IR CU IT / ¡P D 4 2 S 1 6 1 7 0 L ,4 2 S 1 7 1 7 0 L ,4 2 S 1 8 1 7 0 L 16 M BIT D Y N A M IC RAM 3 .3 V FAST PAGE M O D E & BYTE W R ITE M O DE P R E LIM IN A R Y -DESCRIPTIO N The NEC u PD42S16170L, u PD42S17170L and

Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µPD431016B 1M-BIT CMOS FAST SRAM 64K-WORD BY 16-BIT Description The µPD431016B is a high speed, low power, 1,048,576 bits 65, 536 words by 16 bits CMOS static RAM. Operating supply voltage is 5.0 V ± 0.5 V.

*D431016

Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µPD431016BL 1M-BIT CMOS FAST SRAM 64K-WORD BY 16-BIT Description The µPD431016BL is a high speed, low power, 1,048,576 bits 65, 536 words by 16 bits CMOS static RAM. Operating supply voltage is 3.3 V ± 0.3 V.

Contextual Info: b427525 0042323 TbS » N E C E f MOS INTEGRATED C IR CU IT H / P D 4 2 S 1 6 1 6 L , 4 2 S 1 7 1 6 L , 4 2 S 1 8 1 6 L 16 M BIT D Y N A M IC RAM 3 .3 V FAST PAGE M O D E & BYTE R E A D /W R IT E M O DE -P R E L IM IN A R Y -D ESCRIPTIO N

LA80P

Abstract: marking 80L
Contextual Info: b427525 0042407 Tbb « N E C E MOS INTEGRATED CIRCUIT ju P D 4 2 S 1 6 1 8 0 L , 4 2 S 1 7 1 8 0 L , 4 2 S 1 8 1 8 0 L 16 M BIT D Y N A M IC RAM 3 .3 V FAST PAGE M O DE & BYTE R E A D /W R IT E M O DE -PRELIMINARY-DESCRIPTION The NEC ^PD42S16180L, u PD42S17180L and n PD42S18170L are 1 048 576 words by 18 b its

PD42S

Contextual Info: b427525 GQ4HSbT TEI « N E C E MOS INTEGRATED CIRCUIT jtiP D 4 2 S 1 6 1 9 0 L , 4 2 S 1 7 1 9 0 L , 4 2 S 1 8 1 9 0 L 16 M B IT D Y N A M IC RA M 3 .3 V FA ST P A G E M O D E & B Y T E W R IT E M O D E P R E LIM IN A R Y -D E S C R IP T IO N The NEC n PD42S16190L. ^ PD42S17190L and // PD42S18190L a re 1 048 576 words by 18 b i t s

Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT UPD434016AL 4M-BIT CMOS FAST SRAM 256K-WORD BY 16-BIT Description T he ^¡P D 434016A L is a high speed, lo w pow er, 4 ,1 9 4 ,3 0 4 bits 26 2,14 4 w o rd s by 16 bits C M O S sta tic RAM. O pe ra ting su p p ly vo lta g e is 3.3 V ± 0.3 V.

4N500

Abstract: IC 741 cn
Contextual Info: b427555 GG42530 Tfc.7 « N E C E / / MOS INTEGRATED CIR CU IT ju P D 4 2 S 1 6 1 9 0 , 4 2 S 1 7 1 9 0 , 4 2 S 1 8 1 9 0 16 M B IT D Y N A M IC RAM FA S T PA G E M O D E & B Y T E W R IT E M O DE - P R E LIM IN A R Y -D E S C R IP T IO N

EZ 929

Abstract: S1616
Contextual Info: DATA SHEET NEC / MOS INTEGRATED CIRCUIT _ _ _ _ _ _ _ _ //¿PD42S16160L, 4216160L, 42S18160L, 4218160L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 1 M-W ORD B Y 16-BIT, FA ST P A G E M ODE, B Y T E READ/WRITE M O D E D escrip tion T h e ¿ iP D 4 2 S 1 6 1 6 0 L , 4 2 1 6 1 6 0 L , 4 2 S 1 6 1 6 0 L , 4 2 1 8 1 6 0 L a re 1,048, 576 w ord s by 16 b its C M O S d y n a m ic R A M s .

LE-60

Abstract: 42S18
Contextual Info: jtiPD421x160/L, 42S1x160/L x = 6, 7, 8 1,048,576 x 16-Bit Dynamic CMOS RAM NEC Electronics Inc. Description The devices listed below are fast-page dynamic RAMs organized as 1 M words by 16 bits and designed to operate from a single power supply. Optional features

5M21

Contextual Info: 4 k /X V * Í \ £ W NEC Electronics Inc. íiPD421x180/L, 42S1X180/L x = 6, 7, 8 1,048,576 x 18-Bit Dynamic CMOS RAM Description The devices listed below are fast-page dynam ic RAMs organized as 1M words by 18 bits and designed to o perate from a single power supply. O ptional features

4623A

Abstract: K311 LE-60 GD34063
Contextual Info: blE » • b427525 0D34G75 flìfl «NECE jiPD421x180/L, 42S1x180/L x = 6, 7, 8 NEC Electronics Inc. 1,048,576 x 18-Bit Dynamic CMOS RAM _N E C ELECTRONICS INC 7~~ '¿U-l# W M li W Description The devices listed below are fast-page dynamic RAMs

jl-026

Abstract: A151 A161 SST39VF020
Contextual Info: 2 Megabit 256K x 8 Multi-Purpose Flash SST39VF020 Preliminary Specifications FEATURES: • Organized as 256K X 8 • Single 2.7-3.6V Read and Write Operations • Superior Reliability - Endurance: 100,000 Cycles (typical) - Greater than 100 years Data Retention

Contextual Info: blE D bM2752S 0034G34 I TflM « N E C E NEC Electronics Inc. N E C E L E C T R O N I C S INC Description T he devices listed below are fast-page dynam ic RAMs organized as 1M words by 16 bits and designed to o p e ra te from a single pow er supply. O ptional features

Contextual Info: I % REVISIONS DffTE VIMKMM DESCMPDON LTR APPROVED REV SHEET REV SHEET REV STATUS OF SHEETS REV 10 11 SHEET PMC N/A T tfJU STANDARDIZED MILITARY DRAWING CHECKED BY Tfcy.'W I 12 13 18 19 MICROCIRCUITS, MEMORY, DIGITAL, CMOS 2K X 8 EEPROM, MONOLITHIC SILICON

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid