A-MAX 22 Search Results

2n6a

Abstract: 2N6180 2N6292 2N6181 2N5298 2N6107 2N6177 2N6178 2N6478 2N6488
Contextual Info: PLASTIC-PACKAGED POWER TYPES le > 2 A max. P y * 25 W max. P lv tic T0-5 42x42* IC * 4 A max. P j - 25 W max. (Plastic TO-5) 42x42 le > 1 A max. Pt • 20 w max. (Plastic TO-5) 3 2 x3 2 lc - 7 A max. P y - 4 0 W max. V ERSA W A TT (TO-220) l c • - 7 A max.

Contextual Info: BR213-260 Thyristors Dual Bidirectional Breakover Diode V BO Min. (V) V(BO) Max. (V)292 I(S) Max. (A)1.0 I(TRM) Max. (A)40 @ t(w) (s) (Test Condition)320u I(TSM) Max. (A)30 @ t(w) (s)10m V(R) Max. (V)228 I(H) Max. (A) Holding Current150m V(TM) Max. (V)2.5

TIC47 SCR

Abstract: TIC47 scr tic116 TIC44 TIC45 SCR TIC106 scr tic226 SCR 2N5061 TIC46 TIC48
Contextual Info: 11 SCR’s and Triacs Triacs TO-220AB Plastic, 3A to 16AZ Economy S C R 's Type No. Case Outline IT V D R M ITSM A A V IGT VGT IH max. max. max. mA V mA V T @ IT max. V A IT VDRM D evice Type R M S t A V IT S M IG T max. Il lltl A IG T max. IV VGT max.

SCR 30 A TOP3

Abstract: TN2540-600G TN805-600B TN815-600B TS1220-600B TS420-600B TS820-600B TN1215-600G TN1625-600G TN2540600G
Contextual Info: THYRISTORS SCRs D2PAK DPAK SOT-223 SOT-23 SURFACE MOUNT SCRs Tj max = 125 °C IT RMS (A) VRRM VDRM TC Part Number (V) Tj = 25°C ITSM dl/dt VTM @ ITM dV/dt Tj max max (A/µs) IGT IGT IH max (mA) max (mA) max (V) (A) min (V/µA) (°C) (A) min (mA) Package

Contextual Info: L1/5H Diodes Selenium Diode I O Max.(A) Output Current250u V(RRM)(V) Rep.Pk.Rev. Voltage340 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.1.0m V(FM) Max.(V) Forward Voltage21 @I(FM) (A) (Test Condition).25m I(RM) Max.(A) Reverse Current7.5u @V(R) (V)(Test Condition)220 I(RM) Max.(A) Pk. Rev. Current

Contextual Info: SV100A3 Diodes Forward Reference Diode If Max A 500m I(FSM) Max.(A) Pk.Fwd.Sur.Cur.25 V(FM) Max.(V) Forward Voltage1.0 @I(FM) (A) (Test Condition)225m I(RM) Max.(A) Reverse Current @V(R) (V)(Test Condition) Semiconductor MaterialSilicon Package StyleAxial-10

RCA 40411 transistor

Abstract: rca 40411 audio amplifier with rca 40411 RCA 528 transistor 40411 40411 transistor 40411 RCA 40250 transistor BDY29 RCA 2N6254
Contextual Info: Ic to 80 A . . . Pt to 300 W . . . V cE to 170 V HOMETAXIAL-BASE N-P-N POWER TYPES le - 16 A max. •260 W max. <e “ 1.6 A max. le a 1 . S A max. lc » 3 .S A max. lc * 4 A m ax. lc a 4 A max. le • 3 A max. le “ 3 A max. le - 7 A max. lc a 1 S A max.

Contextual Info: With potting cup / Avec coupelle potting TYPE 71 L B 1,75 max. F J G Part number Référence A max. B max. F max. G max. J mini. L max. DBAS 71-3-* P/S * A 083 25,45 22,60 14,50 17,00 4,60 43,50 DBAS 71-7-* P/S * A 083 28,65 25,80 17,35 21,80 10,00 43,50

rca8203a

Abstract: RCA8350B 2N6534 2N6055 2N6056 2N6337 2N6383 2N6385 2N6535 2N6536
Contextual Info: MONOLITHIC DARLINGTON TYPES H E R M E T IC lc • 8 A max. P j - 3 6 W max. T O -66 138 x 136 lc > 8 A max. P f “ 90 W max. (TO-31 136 x 136 P L A S T IC 1 = 10A max. c PT = 70W max. l = 10 A mox. c P^ = 70W max. VERSAWATT (T 0 -2 2 0 ) VERSAWATT (T O -220)

RCA 40636 transistor

Abstract: rca 40636 rca 2N3771 power circuit 40636 rca rca 40327 300W TRANSISTOR AUDIO AMPLIFIER 40636 220v 300w ac regulator circuit 2N3055 RCA 40327
Contextual Info: Ic to 80 A . . . P t to 300 W . . . V cE to 170 V H O M ETAXIAL-BASE N-P-N POWER TYPES le - 16 A max. •260 W max. <e “ 1.6 A max. le a 1 . S A max. lc » 3 .S A max. lc * 4 A m ax. lc a 4 A max. le • 3 A max. le “ 3 A max. le - 7 A max. lc a 1 S A max.

Contextual Info: MMBF5459 Transistors N-Channel JFET Military/High-RelN V BR DSS (V) V(BR)GSS (V)25 I(D) Max. (A) I(G) Max. (A) Absolute Max. Power Diss. (W)225m Maximum Operating Temp (øC)150þ I(GSS) Max. (A)1.0n @V(GS) (V) (Test Condition) V(GS)off Min. (V) I(DSS) Max. (A)

Contextual Info: MMBF5457 Transistors N-Channel JFET Military/High-RelN V BR DSS (V)25 V(BR)GSS (V)25 I(D) Max. (A) I(G) Max. (A) Absolute Max. Power Diss. (W)225m Maximum Operating Temp (øC)150õ I(GSS) Max. (A)1.0n @V(GS) (V) (Test Condition) V(GS)off Min. (V) I(DSS) Max. (A)

Contextual Info: MMBF4391 Transistors N-Channel JFET Military/High-RelN V BR DSS (V)30 V(BR)GSS (V)30 I(D) Max. (A)1.0n I(G) Max. (A) Absolute Max. Power Diss. (W)225m Maximum Operating Temp (øC)150õ I(GSS) Max. (A)1.0n @V(GS) (V) (Test Condition) V(GS)off Min. (V) I(DSS) Max. (A)

Contextual Info: MMBF5460 Transistors P-Channel JFET Military/High-RelN V BR DSS (V) V(BR)GSS (V)40 I(D) Max. (A) I(G) Max. (A) Absolute Max. Power Diss. (W)225m Maximum Operating Temp (øC)150õ I(GSS) Max. (A)5.0n @V(GS) (V) (Test Condition) V(GS)off Min. (V) I(DSS) Max. (A)

Contextual Info: MMBF4860 Transistors N-Channel JFET Military/High-RelN V BR DSS (V)30 V(BR)GSS (V)30 I(D) Max. (A) I(G) Max. (A) Absolute Max. Power Diss. (W)225m Maximum Operating Temp (øC)150õ I(GSS) Max. (A)500p @V(GS) (V) (Test Condition) V(GS)off Min. (V) I(DSS) Max. (A)

Contextual Info: MMBFU310L Transistors N-Channel JFET Military/High-RelN V BR DSS (V)25 V(BR)GSS (V)25 I(D) Max. (A) I(G) Max. (A) Absolute Max. Power Diss. (W)225m Maximum Operating Temp (øC)150õ I(GSS) Max. (A)150p @V(GS) (V) (Test Condition) V(GS)off Min. (V) I(DSS) Max. (A)

Contextual Info: MMBFU310 Transistors N-Channel JFET Military/High-RelN V BR DSS (V)25 V(BR)GSS (V)25 I(D) Max. (A) I(G) Max. (A) Absolute Max. Power Diss. (W)225m Maximum Operating Temp (øC)150õ I(GSS) Max. (A)150p @V(GS) (V) (Test Condition) V(GS)off Min. (V) I(DSS) Max. (A)

Contextual Info: MMBF4392 Transistors N-Channel JFET Military/High-RelN V BR DSS (V)30 V(BR)GSS (V)30 I(D) Max. (A)1.0n I(G) Max. (A) Absolute Max. Power Diss. (W)225m Maximum Operating Temp (øC)150õ I(GSS) Max. (A)1.0n @V(GS) (V) (Test Condition) V(GS)off Min. (V) I(DSS) Max. (A)

Contextual Info: MMBF4393 Transistors N-Channel JFET Military/High-RelN V BR DSS (V)30 V(BR)GSS (V)30 I(D) Max. (A)1.0n I(G) Max. (A) Absolute Max. Power Diss. (W)225m Maximum Operating Temp (øC)150õ I(GSS) Max. (A)1.0n @V(GS) (V) (Test Condition) V(GS)off Min. (V) I(DSS) Max. (A)

Contextual Info: 2N7218U Transistors N-Channel JFET Military/High-RelN V BR DSS (V)100 V(BR)GSS (V) I(D) Max. (A)22 I(G) Max. (A) Absolute Max. Power Diss. (W)75# Maximum Operating Temp (øC)150õ I(GSS) Max. (A)100n @V(GS) (V) (Test Condition)20 V(GS)off Min. (V)2.0 I(DSS) Max. (A)

Contextual Info: MMBF4416 Transistors N-Channel JFET Military/High-RelN V BR DSS (V)30 V(BR)GSS (V)30 I(D) Max. (A) I(G) Max. (A) Absolute Max. Power Diss. (W)225m Maximum Operating Temp (øC)150õ I(GSS) Max. (A)1.0n @V(GS) (V) (Test Condition) V(GS)off Min. (V) I(DSS) Max. (A)

Contextual Info: MMBF5484 Transistors N-Channel JFET Military/High-RelN V BR DSS (V) V(BR)GSS (V)25 I(D) Max. (A) I(G) Max. (A) Absolute Max. Power Diss. (W)225m Maximum Operating Temp (øC)150õ I(GSS) Max. (A)1.0n @V(GS) (V) (Test Condition) V(GS)off Min. (V) I(DSS) Max. (A)

Contextual Info: 2SK1375-22 Transistors N-Channel JFET Military/High-RelN V BR DSS (V)20 V(BR)GSS (V) I(D) Max. (A)1.0m I(G) Max. (A) Absolute Max. Power Diss. (W)100m Maximum Operating Temp (øC)150õ I(GSS) Max. (A) @V(GS) (V) (Test Condition) V(GS)off Min. (V) I(DSS) Max. (A)350u

k 2134

Abstract: Planar choke 605f H 498
Contextual Info: A C B G H D E ITEM A B C D E F G H I J K L M N O 1 2 22.10 MAX 23.11 MAX 14.73 MAX 3.94+/-0.5 22.10 MAX 21.34 MAX 14.73 MAX 3.94+/-0.5 10.54+/-0.5 7.24 MAX 10.54+/-0.5 6.73 MAX - 2.82+/-0.38 -22.61 14.73 4.98+/-0.38 22.61 17.91 9.58 4.70 4.83 6.05 I