A TRANSISTOR Search Results

1SS TRANSISTOR

Contextual Info: SILICON N CHANNEL JUNCTION TYPE FET SILICON NPN EPITAXIAL TYPE TRANSISTOR HN3G01J U n it in mm HIGH FR EQUENCY A M P LIF IE R A PP LIC A T IO N S . AM H IG H FREQUENCY A M P LIF IE R A PP LIC A TIO N S. A U D IO FREQUENCY A M P LIFIER APP LIC A TIO N S. M A X IM U M R ATINGS Ta = 25°C

Contextual Info: TLP631,632 GaAs IRED & PHOTO-TRANSISTOR PROGRAMMABLE CONTROLLERS A C / D C-INPUT MODULE SOLID STATE RELAY The TOSH I B A TLP631 and TLP632 consist of a photo-transistor opti c a l l y coupled to a gallium arsenide infrared emitting d i ode in a six lead plastic DIP package.

P571

Abstract: TLP570 lm 383 ic
Contextual Info: GaAs IRED & PHOTO-TRANSISTOR TLP570,571 TLP570 P R O G R A M M A B L E C O N T R O LLE R S A C / D C - IN PUT M O D U L E SO L ID STATE RELAY T h e T O S H IB A T L P 570 a n d T L P 571 c o n s ist o f a d a r lin g to n co n n ected p h o to -tra n s is to r o p tic a lly coupled to a g a lliu m a rse n id e in fra re d

TLP251

Contextual Info: T O S H IB A PH O T O C O U PLER SEMICONDUCTOR TOSHIBA TEC H N IC A L T L P 2 51 D A TA G a A íA s IRED & PHOTO-IC TLP251 U n it in mm INVERTER FOR AIR CONDITIONOR INDUCTION HEATING TRANSISTOR INVERTER PO W ER MOS FET GATE DRIVE IGBT GATE DRIVE The Toshiba TLP251 consists of a G a A iA s lig h t em itting diode and

Contextual Info: TLP251 GaAGAs IRED & PHOTO-IC TLP251 INVERTER FOR A IR CO NDITIO NO R INDUCTION HEATING TRANSISTOR INVERTER P O W E R M O S FET GATE DRIVE IGBT GATE DRIVE The Toshiba T L P2 5 1 consists of a G a A f A s lig h t em itting diode and a integrated photodetector.

3sk fet

Abstract: transistor 2sk 4007F 2sk711 2SC388A S3275 2sk241 3SK257 transistor 2sk 161 2SK type
Contextual Info: 2. C H A R A C T E R IST IC S C H A R T 2.1 TRANSISTORS FOR TV TUNER MAX V e to APPLICATION E L E C T R IC A L C H A R A C T E R IS T IC S R A T IN G S le M T Y P . Pc Vce V CE V ) |m A | |mW) (V ) 2SC 362TM 40 50 2 5 0 30MIN 2SC 383TM 45 50 300 2SC388ATM

2SK161

Abstract: 2SK161GR vI652
Contextual Info: SILICON N CHANNEL JUNCTION TYPE FIELD EFFECT TRANSISTOR 2SK161 U nit in mm FM TU N ER A P P LIC A T IO N S . VH F B A N D A M P LIF IE R A PP LIC A T IO N S . Low Noise Figure • • : NF = 2.5dB Typ. (f= 100MHz) High Forward Transfer Admittance : |Yfs| = 9mS (Typ.)

MARKING toshiba TLP621-4

Abstract: tlp621
Contextual Info: GaAs IRED a PHOTO-TRANSISTOR TLP621,-2,-4 T LP6 2 1 U nit in mm P R O G R A M M A B L E CONTROLLER TLP621 W eight : 0.26g A C / D C - IN P U T M O D ULE SOLID STATE RELA Y The TOSHIBA TLP621, -2, and -4 consists of a photo­ transistor optically coupled to a gallium arsenide

Contextual Info: FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2-7r-MOSm 2SK1381 H IG H S P E E D , H I G H CURRENT SW ITC HIN G A P P L I C A T I O N S . IN D U S T R I A L A P P L I C A T I O N S R E L A Y D R IV E ,M O T O R D R IVE AND DC-DC CON VER TER A P P L I C A T I O N S .

2N5221

Contextual Info: TYPES 2N5221, AST5221 P N-P SILICON TRANSISTORS B U L L E T IN N O . D L -S 731 1 9 2 4 , M A R C H 1973 S IL E C T t T R A N S IS T O R S ^ FOR G E N E R A L PU R PO SE A M P L IF IE R A N D LOW-POWER A U D IO A P P L IC A T IO N S • For Complementary Use with N-P-N Types 2N5220, A5T5220

TLP338

Contextual Info: TLP337,338 GaAs IRED a PHOTO-TRANSISTOR TENTATIVE DATA TELECOMMUNICATION. OFFICE MACHINE. TELEPHONE USE EQUIPMENT. The TOSHIBA TLP337 and TLP338 consist of a photo-transistor optically coupled to a gallium arsenide infrared emitting diode in a six lead plastic DIP package.

543C

Abstract: BD543 BD543A BD543B BD543C
Contextual Info: Inchange Semiconductor Product Specification BD543/A/B/C Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-220C package ・Complement to type BD544/A/B/C ・8 A continuous collector current ・10 A peak Collector current PINNING PIN DESCRIPTION 1 Base

Contextual Info: TLP572 GaAs IRED S PHOTO-TRANSISTOR TLP572 P R O G R A M M A B L E C ONTRO LLERS A C /DC - IN P U T M O D U L E SO LID STATE RELAY The TOSHIBA TLP572 consists of a darlington connected photo­ transistor optically coupled to a gallium arsenide infrared em itting

OPI1000LE

Abstract: opi1000lc 1000L opi 1000
Contextual Info: OPI 1000L Series Optically Coupled Isolators Surface Mount Low Profile BASEEFA CERTIFIED The OPI 1000 A through E are a series of Optically Coupled Isolators each consisting of a Infrared emitter coupled to a silicon photo transistor. The series is designed for

Contextual Info: GaAs IRED a PHOTO-TRANSISTOR TLP130 TLP130 U nit in mm P R O G R A M M A B L E CO NTRO LLER S A C /D C - IN P U T M O D U L E T E L E C O M M U N I C A T IO N The TOSHIBA MINI FLAT COUPLER TLP130 is a small outline coupler, suitable for surface m ount assembly.

Contextual Info: GeAs IRED & PHOTO-TRANSISTOR TLP131 TLPiai OFFICE M A C H IN E P R O G R A M M A B L E CONTRO LLERS A C / D C -IN P U T M O D U L E T E L E C O M M U N IC A T IO N The TOSHIBA MINI FLAT COUPLER TLP131 is a small outline coupler, suitable for surface m ount assembly.

2SK1350

Abstract: transistor 2sk1350
Contextual Info: FIELD EFFECT TRANSISTOR 2SK1350 SILICON N CHANNEL MOS TYPE tt-M O S i i I N D U S T R I A L A P P I ¡ C A T IO N S H IG H S P E E D , HIGH CURRENT SW ITCHIN G A P P L I C A T I O N S . U n it CHOPPER REG U LATO R , D C - OC C ON VER TER AND MOTOR DR IVE A P P L I C A T I O N S .

YTF531

Abstract: th204
Contextual Info: FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOS i i YTF531 HIGH S P E E D , H I G H CURRENT SW ITCHIN G A P P L I C A T I O N S . IN D USTRIAL A P P LIC A TIO N S CHO PPER R E G U L A T O R , D C - O C C ON VER TER ANO HOTOR U n it DR IVE A P P L I C A T I O N S .

J2N4392

Abstract: 2n4393 transistor 2N4393 2N43931 2n4392 2N4391
Contextual Info: TYPES 2N4391 THRU 2N4393 N-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTORS B U L L E T IN N O . D L-S 7 3 1 1 9 1 2 , M A R C H 1973 S Y M M E T R IC A L N -C H A N N E L F IE L D -E F F E C T T R A N S IS T O R S FOR H IG H -SP E E D C O M M U T A T O R A N D CHO PPER A P P L IC A T IO N S

431202036640 choke

Abstract: CEF 83 A 3 BLW85 ZL18 blw85 transistor test circuit
Contextual Info: PHILIPS INTERN A T I O N A L L.5E D 711Dfi2ti 00b33>4b Ô3Û • PHIN ■ I BLW85 _ A _ H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated mobile h.f. and v.h.f. transmitters with a nominal supply voltage of 12,5 V . The transistor is resistance stabilized and

10AM11

Abstract: 08.24.35 ic sheet data 9847 9508 ic 4521 90436 130-047
Contextual Info: 10AM11 11 Watts, 20 Volts, Class A Linear to 1000 MHz GENERAL DESCRIPTION The 10AM11 is a COMMON EMITTER transistor capable of providing 11 Watts of Class A, RF output power to1000 MHz. This transistor is specifically designed for general Class A amplifier applications. It utilizes

Contextual Info: TYPE 2N3053 N-P-N SILICON TRANSISTOR B U L L E T IN N O . O L -S 7311957, M A R C H 1973 FO R H IG H -C U R R E N T , H IG H -D ISSIP A T IO N , G E N E R A L PU RPO SE A P P L IC A T IO N S • High Current Capability . . 700 m A • High Dissipation Capability . . . 10 W

TLP805

Abstract: TLP806 tlp810 TLP802
Contextual Info: Photo Interrupters Photo Transistor Output T y p e No. F e atures TLP507A D ete ction Gap (m m ) M a x im u m R a tin g s {T a = 2 5 "C ) S lit W id th F o rw a rd C u rre n t (m m ) (m A ) Collector Emitter Voltage Operating Temperature Current Tran; 1er Ratio(%)

C-123

Abstract: 2SB950 2SB950A 2SD127 2SD1276 2SD1276A IPL 3000
Contextual Info: Power Transistors 2SD1276, 2SD1276A 2S D 1 27 6, 2S D 1276A P a c k a g e D im e n s io n s Silicon NPN Triple-D iffused Planar D arlington Type P o w e r A m p lifier C o m p le m e n ta ry P a ir with 2 S B 9 5 0 , 2 S B 9 5 0 A • F e a tu re s • H ig h D C c u r r e n t g a in h pc