A TRANSISTOR Search Results

BD678

Abstract: BD680 bd680 transistor A-BD678 BD676 BD682 BD682A A-BD682 BD676A
Contextual Info: PNP BD676/A - BD678/A - BD680/A - BD682/A SILICON DARLINGTON POWER TRANSISTORS The BD676/A-BD678/A-BD680/A-BD682/A are PNP They are eptaxial-base transistors in monolithic Darlington circuit for audio and video applications. They are mounted in Jedec TO-126 plastic package.

transistor z ss

Contextual Info: SILICON N CHANNEL JUNCTION TYPE FIELD EFFECT TRANSISTOR 2SK711 U nit in mm H IG H FR EQUENCY A M P LIF IE R A PP LIC A T IO N S . A M H IG H FREQUENCY A M P LIF IE R A PP LIC A T IO N S . 2. 5îg1 A U D IO FREQUENCY A M P LIF IE R A PP LIC A T IO N S . . •

2SC5064

Contextual Info: SILICON NPN EPITAXIAL PLANAR TYPE TRANSISTOR A A A P A C A - z o ü o Ud 4 U nit in mm V H F - U H F B A N D L O W NOISE A M P LIFIER A PP LIC A TIO N S. • • Low Noise Figure, High Gain. NF = l.ldB , |S2lel2 = 12dB f= lG IIz

MHQ6002

Abstract: 2N5146 MHQ3467 MPQ6002 MPQ7053 MHQ2222 MHQ2369 MHQ2484 MHQ2907 MHQ3546
Contextual Info: MULTIPLE SMALL-SIGNAL TRANSISTORS continued Quad Transistors MHQ918 MHQ2222 MHQ2369 MHQ2484 NF NG NS NA 0.65 A 0.65 A 0.5 A 0.6 A 15 40 15 40 MHQ2907 MHQ3467 MHQ3546 MHQ3799 PG PS PS PA 0.65 A 0.9 A 0.5 A 0.5 A 40 40 12 60 MHQ4014 MHQ6001 MHQ6002 NS CA CA

A 933 S transistors

Contextual Info: Transistors General Purpose Transistor -50V, 0.15A 2 S A 1037 A K / 2 S A 1576 A / 2 S A 1774 / 2 S A 933 A S • Features 1 ) Excellent I i f e linearity. 2) Complements the 2SC2412K/ 2SC4081 /2SC4617 / 2SC1740S. •E x te rn a l dimensions (Units: mm)

Contextual Info: SILICON N CHANNEL JUNCTION TYPE FIELD EFFECT TRANSISTOR 2SK1875 U nit in mm H IG H FREQ U EN CY A M P LIF IE R A PP LIC A T IO N S . AM H IG H FREQUENCY A M P LIF IE R A PP LIC A T IO N S . 1.25 ±0. 1 A U D IO FREQUENCY A M P LIF IE R A PP LIC A T IO N S .

BD 677

Abstract: BD 675 bd 679 BD NPN transistors bd675 BD677A K 679 M 675 F bd679a darlington bd
Contextual Info: BD 675,A BD 6 7 7 ,A BD 679,A NPN SILICON DARLINGTON TRANSISTORS, EPITAXIAL BASE TR A N S IS TO R S D A R L IN G T O N S IL IC IU M NP N , B A S E E P IT A X IE E Compì, of BD 676, A ; BD 678, A ; BD 680, A PRELIM INARY DATA N O T IC E PR E L IM IN A IR E

d1684

Abstract: C3788 c4217 d1047 c2078 C4161 D1651 D1682 k2043 K1460
Contextual Info: Transistors Type Number SAftYO Index *:New products for FEB added. Type No. Package Page Type No. 2SA Typi T0220 2SA1011 NP Al 016,1 SPA A] 177 NP A 1207 MP Al 208 T0126 Al 209 A ’237 DP6A, B il A: 238 it A! 239 il Ax 240 NP A: 246 T0126 A: 248 h A. 249

BD - 100 V

Abstract: transistor BD 522 BD 680 vertical tv deflexion bd 676 bd676 bd678 darlington bd deflexion LB 676
Contextual Info: DU D/D, M PNP S ILIC O N D A R L IN G T O N TR A N S IS TO R S , E P IT A X IA L BASE BD 678. A TRANSISTORS DARLIN G TO N SILIC IU M PNP, BASE EPITAXIES BD 680,' A Compì, of BD 67 5, A ; BD 67 7, A ; BD 67 9, A P R E L IM IN A R Y D A TA NOTICE P R ELIM IN A IR E

Contextual Info: TO SHIBA TD62382AP/F/AF TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TD62382AP, TD62382F, TD62382AF 8CH LOW INPUT ACTIVE SINK DRIVER The TD62382AP/F/AF are non-inverting transistor array \A /h i/* h w v ic a A s k a a i n h + I/*s\a/ e a + i i r a + i r t n

1SS TRANSISTOR

Contextual Info: SILICON N CHANNEL JUNCTION TYPE FET SILICON NPN EPITAXIAL TYPE TRANSISTOR HN3G01J U n it in mm HIGH FR EQUENCY A M P LIF IE R A PP LIC A T IO N S . AM H IG H FREQUENCY A M P LIF IE R A PP LIC A TIO N S. A U D IO FREQUENCY A M P LIFIER APP LIC A TIO N S. M A X IM U M R ATINGS Ta = 25°C

2N2192

Abstract: 2N2193A 2N2193 2N2192A 2193A SCHEMA VTP2N 2192 2193 t 2n 2192
Contextual Info: 2N2192, A 2N2193, A NPN SILICON TRANSISTORS, EPITAXIAL TRANSISTORS NPN SILIC IU M , EP IT A X I A UX - LF large signal amplification i 40 V 2N 2192,A 1 50 V 2N 2193,A A m plification BF grands signaux V CEO * Medium current switching Commutation à moyen gourant

BSX51

Abstract: Transistor BSX 32 Transistor BSX 51 H8054 bsx52 bsw21 52B15 de 001 TRANSISTOR 9mc0 4682
Contextual Info: NPN SILICON TRANSISTOR, EPITAXIAL PLANAR BSX 52; a ; B TRANSISTOR NPN S ILIC IU M , PLAN A R E P IT A X IA L Compì, of BSW 21, A and BSW 22, A • LF amplification A m plification BF BSX 51, 52 BSX 51 A, 52 A BSX 51 B, 52 B 25 V - Low current switching Commutation faible courant

transistor c111

Abstract: C111 transistor transistor c1124 C1116 transistor MCL610 c1116 MCL611 c1117 C1119 mcl600
Contextual Info: 112 A* O p * t o is W A, l a t o o r s~ PAC K A G E PRODUCT KEY OUTPUT FO RM AT TRAN SISTOR TRAN SISTOR TRAN SISTOR TRAN SISTOR TRAN SISTO R TRAN SISTOR TRAN SISTOR MCT2 MCT2E MCT210 MCT26 MCT4 MCT4R* MCT6 A A A A C C B TRANSISTOR MCT66 B TRAN SISTOR TRAN SISTOR

mcl610

Abstract: MCA81 MCL611 Transistor Data chart mcl600 mcs6200 transistor 6 B transistor c 2500 MCT4R MCL601
Contextual Info: 112 O p to iso Wlato rs A* * A, ~ PACKAGE PRODUCT KEY OUTPUT FORMAT TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR MCT2 MCT2E MCT210 MCT26 MCT4 MCT4R* MCT6 A A A A C C B TRANSISTOR MCT66 B TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR

H11AV1A

Abstract: H11AV1 H11AV2 H11AV2A h11av2 equivalent
Contextual Info: H11AV1,A H11AV2,A GlobalOptoisolator 6-Pin DIP Optoisolators Transistor Output The H11AV1,A and H11AV2,A devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector. • Guaranteed 70 Volt V BR CEO Minimum

H11AV2

Abstract: H11AV1A H11AV1M
Contextual Info: H11AV1,A H11AV2,A GlobalOptoisolator 6-Pin DIP Optoisolators Transistor Output The H11AV1,A and H11AV2,A devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector. • Guaranteed 70 Volt V BR CEO Minimum

2N1305 TEXAS INSTRUMENTS

Abstract: 2N1307 TEXAS INSTRUMENTS 030i TRANSISTOR 2G374 2N711 TEXAS INSTRUMENTS 2N1305 2n388 texas instruments 2N404 transistor 2N711B 2n711
Contextual Info: Germanium Transistors T ype C a se No. C o *" " 0 0 c <u o « o “ NPN 2N388 T05 A General 2N388A T05 A Purpose 2N1302 T05 A and Switching 2N1304 T05 A 2N1305 T05 A 2N1308 T05 A S P E C IA L C h a ra c te ris tic s M axim u m R a tin g s at 25°C amb. •¿z 0>

LT 6242

Contextual Info: GaAs IRED a PHOTO-TRANSISTOR TLP624,-2,-4 TENT A T I V E DA T A PROGRAMMABLE CONTROLLERS AC/DC-INPUT MODULE TELECOMMUNICATION Unit in m m The T O S H I B A TLP624, -2 and -4 consist of a g a l l i u m a r s e n i d e infrared emitting diode op t i c a l l y coupled to a photo-transistor.

LF marking transistor

Abstract: 2SA1037AK transistor marking LF
Contextual Info: Transistors I UML1N Low-frequency transistor UML1N ► Absolute m a x im u m ra tin g s T a = 25°C •F e a tu re s 1 ) T h e 2 S A 1 0 3 7 A K a n d a d io d e a re h o u s e d in d e p e n d e n tly in a Parameter U M T p a cka g e . Symbol Coi lector-base voltage

Contextual Info: Provisional Data Sheet No. PD-9.1446 In te rn a tio n a l IO R Rectifier IRHI7360SE R E P E T I T I V E A V A L A N C H E A N D dv/dt R A T E D HEXFET TRANSISTOR N -C H A N N E L _ S IN G L E E V E N T E F F E C T S E E R A P H A R D

transistor BF 235

Abstract: BF968 transistor bf 968
Contextual Info: asE D • û 235 b a s a a c m s a a 1 ■ jg sieg ■ PNP Silicon Planar Transistor SIEMENS AKTIEN6ESELLSCHAF BF 968 D - for input stages up to 900 M H z BF 968 is a PNP silicon UHF planar transistor with passivated surface in a low-capacitance

Contextual Info: PHOTOINTERRUPTER Photointerrupter P6291 Photo IC output P6921 is a photointerrupter consisting of a high-power infrared LED and a photo IC. The photo IC incorporates a high-sensitivity photodiode, an amplifier, a Schmitt trigger circuit and an output transistor, all integrated in a single chip. These elements are enclosed in a miniature C-shape

Contextual Info: SILICON EPITAXIAL PLANAR TYPE TRANSISTOR HN1V01H A M R A D IO B A N D T U N IN G A PPLIC A TIO N S. U n i t in m m + 0 .3 4 5 -0 2 3 .] H i g h C a p a c it a n c e R a tio : C I V / C 8 V = 19.5 Typ. — E3 : Q = 200 (Min.) 1 — IMM OO + 1 • I n c lu d i n g F o u r Devices in F M 8 P a c k a g e ( F l a t P a c k M ini 8Pin)