A TRANSISTOR Search Results

BLF881

Contextual Info: A A A A A FT FT FT FT FT D R R A A FT FT FT FT A A R R D D D D R R A FT FT FT A A R R D D D R A F FT FT A A R R D D Objective data sheet D Rev. 00.02 — 23 January 2009 R R R R R UHF power LDMOS transistor D D D D D BLF881 D FT FT A A R R D D D 1. Product profile

BD678

Abstract: BD680 bd680 transistor A-BD678 BD676 BD682 BD682A A-BD682 BD676A
Contextual Info: PNP BD676/A - BD678/A - BD680/A - BD682/A SILICON DARLINGTON POWER TRANSISTORS The BD676/A-BD678/A-BD680/A-BD682/A are PNP They are eptaxial-base transistors in monolithic Darlington circuit for audio and video applications. They are mounted in Jedec TO-126 plastic package.

BD675-BD677-BD679-BD681

Abstract: BD681A transistor BD677 BD677 BD677 transistor BD675 BD681 transistor BD681 BD679
Contextual Info: NPN BD675/A - BD677/A - BD679/A - BD681/A SILICON DARLINGTON POWER TRANSISTORS The BD675/A-BD677/A-BD679/A-BD681/A are NPN They are eptaxial-base transistors in monolithic Darlington circuit for audio and video applications. They are mounted in Jedec TO-126 plastic package.

transistor z ss

Contextual Info: SILICON N CHANNEL JUNCTION TYPE FIELD EFFECT TRANSISTOR 2SK711 U nit in mm H IG H FR EQUENCY A M P LIF IE R A PP LIC A T IO N S . A M H IG H FREQUENCY A M P LIF IE R A PP LIC A T IO N S . 2. 5îg1 A U D IO FREQUENCY A M P LIF IE R A PP LIC A T IO N S . . •

2SC5064

Contextual Info: SILICON NPN EPITAXIAL PLANAR TYPE TRANSISTOR A A A P A C A - z o ü o Ud 4 U nit in mm V H F - U H F B A N D L O W NOISE A M P LIFIER A PP LIC A TIO N S. • • Low Noise Figure, High Gain. NF = l.ldB , |S2lel2 = 12dB f= lG IIz

MHQ6002

Abstract: 2N5146 MHQ3467 MPQ6002 MPQ7053 MHQ2222 MHQ2369 MHQ2484 MHQ2907 MHQ3546
Contextual Info: MULTIPLE SMALL-SIGNAL TRANSISTORS continued Quad Transistors MHQ918 MHQ2222 MHQ2369 MHQ2484 NF NG NS NA 0.65 A 0.65 A 0.5 A 0.6 A 15 40 15 40 MHQ2907 MHQ3467 MHQ3546 MHQ3799 PG PS PS PA 0.65 A 0.9 A 0.5 A 0.5 A 40 40 12 60 MHQ4014 MHQ6001 MHQ6002 NS CA CA

A 933 S transistors

Contextual Info: Transistors General Purpose Transistor -50V, 0.15A 2 S A 1037 A K / 2 S A 1576 A / 2 S A 1774 / 2 S A 933 A S • Features 1 ) Excellent I i f e linearity. 2) Complements the 2SC2412K/ 2SC4081 /2SC4617 / 2SC1740S. •E x te rn a l dimensions (Units: mm)

Contextual Info: SILICON N CHANNEL JUNCTION TYPE FIELD EFFECT TRANSISTOR 2SK1875 U nit in mm H IG H FREQ U EN CY A M P LIF IE R A PP LIC A T IO N S . AM H IG H FREQUENCY A M P LIF IE R A PP LIC A T IO N S . 1.25 ±0. 1 A U D IO FREQUENCY A M P LIF IE R A PP LIC A T IO N S .

BD 677

Abstract: BD 675 bd 679 BD NPN transistors bd675 BD677A K 679 M 675 F bd679a darlington bd
Contextual Info: BD 675,A BD 6 7 7 ,A BD 679,A NPN SILICON DARLINGTON TRANSISTORS, EPITAXIAL BASE TR A N S IS TO R S D A R L IN G T O N S IL IC IU M NP N , B A S E E P IT A X IE E Compì, of BD 676, A ; BD 678, A ; BD 680, A PRELIM INARY DATA N O T IC E PR E L IM IN A IR E

d1684

Abstract: C3788 c4217 d1047 c2078 C4161 D1651 D1682 k2043 K1460
Contextual Info: Transistors Type Number SAftYO Index *:New products for FEB added. Type No. Package Page Type No. 2SA Typi T0220 2SA1011 NP Al 016,1 SPA A] 177 NP A 1207 MP Al 208 T0126 Al 209 A ’237 DP6A, B il A: 238 it A! 239 il Ax 240 NP A: 246 T0126 A: 248 h A. 249

BD - 100 V

Abstract: transistor BD 522 BD 680 vertical tv deflexion bd 676 bd676 bd678 darlington bd deflexion LB 676
Contextual Info: DU D/D, M PNP S ILIC O N D A R L IN G T O N TR A N S IS TO R S , E P IT A X IA L BASE BD 678. A TRANSISTORS DARLIN G TO N SILIC IU M PNP, BASE EPITAXIES BD 680,' A Compì, of BD 67 5, A ; BD 67 7, A ; BD 67 9, A P R E L IM IN A R Y D A TA NOTICE P R ELIM IN A IR E

TD62382AP

Contextual Info: TO SHIBA TD62382AP/F/AF TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TD62382AP, TD62382F, TD62382AF 8CH LOW INPUT ACTIVE SINK DRIVER The TD62382AP/F/AF are non-inverting transistor array \A /h i/* h w v ic a A s k a a i n h + I/*s\a/ e a + i i r a + i r t n

Contextual Info: TO SHIBA TD62382AP/F/AF TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TD62382AP, TD62382F, TD62382AF 8CH LOW INPUT ACTIVE SINK DRIVER The TD62382AP/F/AF are non-inverting transistor array \A /h i/* h w v ic a A s k a a i n h + I/*s\a/ e a + i i r a + i r t n

sot-23 marking 7z

Abstract: LA 7673 S221 LB 11971
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon Low Noise, High-Frequency Transistors D e s ig n e d fo r u se in h ig h g a in , lo w n o is e s m a ll-s ig n a l a m p lifie rs . T h is s e rie s fe a tu re s e x c e lle n t b ro a d b a n d lin e a rity a n d is o ffe re d in a v a rie ty o f p a c k a g e s .

Contextual Info: BCX51 BCX52 BCX53 SOT89 PNP SILICON PLANAR M EDIU M POWER TRANSISTORS ISSU E 3 - FEBRUARY 1996_ O C O M P LEM EN T A R Y TYPE - BCX51 - BCX54 BC X52 - BCX55 BCX53 - BCX56 P A R T M A R K IN G D E T A I L S BCX51 BCX52 -A A -A E BCX53 -A H B C X 5 1 -1 0 -A C

transistor TE 901 equivalent

Abstract: te 901 pnp Transistor transistor TE 901 TE 901 transistor equivalent
Contextual Info: Transistors Digital transistors built-in resistors D T A 1 2 3 J E /D T A 1 2 3 J U A /D T A 1 2 3 J K A /D T A 1 2 3 J S A •F e a tu re s •E x te rn a l dimensions (Units: mm) 1) Built-in bias resistors enable the configuration of an inverter circuit

2N2192

Abstract: 2N2193A 2N2193 2N2192A 2193A SCHEMA VTP2N 2192 2193 t 2n 2192
Contextual Info: 2N2192, A 2N2193, A NPN SILICON TRANSISTORS, EPITAXIAL TRANSISTORS NPN SILIC IU M , EP IT A X I A UX - LF large signal amplification i 40 V 2N 2192,A 1 50 V 2N 2193,A A m plification BF grands signaux V CEO * Medium current switching Commutation à moyen gourant

KTA817

Abstract: SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE KTC1627A KTA817A KTC1627
Contextual Info: SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE PCT PROCESS ( KTC1627A APPLICATIONS ) • D r i v e r S ta g e A m p lif ie r A p p lic a tio n s. ■ Voltage A m p lifie r A p p lic a tio n s. ( FEA TU R ES ) • Com plem entary to K T A 8 1 7 A • D riv e r S ta g e A p p lic atio n of 30 to 35 W a tts A m p lifie rs

BSX51

Abstract: Transistor BSX 32 Transistor BSX 51 H8054 bsx52 bsw21 52B15 de 001 TRANSISTOR 9mc0 4682
Contextual Info: NPN SILICON TRANSISTOR, EPITAXIAL PLANAR BSX 52; a ; B TRANSISTOR NPN S ILIC IU M , PLAN A R E P IT A X IA L Compì, of BSW 21, A and BSW 22, A • LF amplification A m plification BF BSX 51, 52 BSX 51 A, 52 A BSX 51 B, 52 B 25 V - Low current switching Commutation faible courant

100020010

Contextual Info: BFQ31 SEM ICONDUCTOR TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH FR E Q U E N C Y A PPLIC A TIO N . V H F B A N D A M PL IFIER A PPLIC A TIO N . M A X IM U M R A TIN G Ta=25°C SYMBOL CHARACTERISTIC Collcctor-Basc Voltage VcBO Collcetor-Emitter Voltage

BUZ45

Abstract: BUZ 840
Contextual Info: SIEMENS SIPMOS Power MOS Transistors BUZ 45 BUZ 45 A BUZ 45 B VDS rn 500 V lD = 8 . 3 . . . 10 A ^DS on = 0-5 . . . 0.8 Q • N channel • Enhancem ent mode • Package: T O -2 04 A A (T O -3 )1) Type Ordering code BUZ 45 C 6 7078-A 1008-A 2 BUZ 45 A C 67078-A 1008-A 3

transistor c111

Abstract: C111 transistor transistor c1124 C1116 transistor MCL610 c1116 MCL611 c1117 C1119 mcl600
Contextual Info: 112 A* O p * t o is W A, l a t o o r s~ PAC K A G E PRODUCT KEY OUTPUT FO RM AT TRAN SISTOR TRAN SISTOR TRAN SISTOR TRAN SISTOR TRAN SISTO R TRAN SISTOR TRAN SISTOR MCT2 MCT2E MCT210 MCT26 MCT4 MCT4R* MCT6 A A A A C C B TRANSISTOR MCT66 B TRAN SISTOR TRAN SISTOR

BC113

Contextual Info: CONSUMER TRANSISTORS continued < _§ X CD E u > > CD O a. """a) o ’ o o n o @ Li. a. >• UJ ll.c PACKAGE P O L A R ITY DESCRIPTION (A )0 3 3 A TYPE High voltage amplifiers o in CM II ro 1@ < j= _u 5 a a. BC 300 NPN Audio driver 80 120 1000 (10) 140 5

aiou

Abstract: H11AV2 H11AV3 H11AV1A H11AV2A H11AV3A ge h11a transistor BC 176
Contextual Info: MOTOROLA S E M IC O N D U C T O R TECHNICAL DATA H 1 1 A V 1 ,A H 1 1 A V 2 ,A H 1 1 A V 3 ,A 6-Pin DIP Optoisolators Transistor Output Each device consists of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector.