A 1042 Y Search Results

reference book on triacs

Abstract: T2322D T2327D T2320 T2320A T2327A T2322 RCA-T2320 BT 804 triacs T2320B
Contextual Info: G E SOLID STATE □1 01E 17796 3875081 G E SOLID STATE File Number l>T|3û7SGai ooiTVTt. s I ” D 3 _ Trlacs T2320, T2322, T2323, T2327 Series 1042 2.5-A Sensitive-Gate Silicon Triacs TERMINAL DESIGNATIONS For A C Power Switching

Contextual Info: THIS DRAWING IS UNPUBLISHED. COPYRIGHT RELEASED FOR PUBLICATION A LL RIGHTS RESERVED. BY TYCO ELECTRONICS CORPORATION. LOC DIST CM 54 REVISIONS LTR T DESCRIPTION EC 0G3B DWN DATE 1042 04 APVD BSV DB 10JUN05 A D D V. S "N i S 95.10 91.14 87.17 83.21 79.25

Contextual Info: 10 P A R T NUMBER LEGEND 87835-*x* 1.27 • ^ 2.54 ±0.25 ^ CKT SIZE I ASSEMBLY TYPE 42 - 574 1 2.54 m J T 6.35 8.89 1 —j [— 2 3 ^ CKT SIZE PART NUMBER A B 87835-084 2 08 7.62 14.73 17.78 15.24 87835-1042 10 10.16 17.27 20.32 17.78 37835-1242 12 12.70

Contextual Info: Il TAB1042 TAB1042 QUAD PROGRAMMABLE OPERATIONAL AMPLIFIER The TAB 1042 is an advanced bipolar integrated c irc u it containing fo u r separate programmable opera­ tion al am plifiers. The fo u r am plifiers are programmed by current into a com m on bias pin w h ic h determines the

Contextual Info: EDD NOTES: UNLESS OTHERWISE SPECIFIED, TOLERANCES ARE ± C A D # 3 3 -1 0 4 2 - 3 0 . 00D 33-1042-30.00 .0 1 0 ” [,2 5 4 m m ]. 1 .2 5 0 [ 3 1 .7 5 m m ]' .2 1 0 MAX [5 .3 3 m m ] .1 8 8 [4 .7 6 m m ] .5 0 0 [1 2 .7 0 m m ] 2X 0 .1 6 0 [0 4 .0 6 m m ] •

95D-48S15RNL

Abstract: 95D-48D15RNL
Contextual Info: Yuan Dean Scientific CO.,LTD 95D SERIES Wide Input Voltage Range 20 Watt Dc-Dc Converter FEATURES: ●2:1Wide Input Voltage. ●Recognized By UL 60950-1 ●20 Watt Package. ●Efficiency To 80% ●PI Input Filter. ●1500Vdc Isolation ●MTBF:>1,500,000 hrs ●Operating Temperature:-40℃ TO +85℃

MIL-STD-750

Abstract: MIL-STD-750 2072
Contextual Info: Microsemi m m m Santa Ana, CA m P fogress Powered b y Tûùhtiùiûÿy MX043J MX043G 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714 979-8220 FAX: (714) 966-5256 Features Harris FSC260R die total dose : 100 kRAD(Si) w ithin pre-radiation param eter lim its

HTGB

Abstract: RAD SMD MARKING CODE SMD MARKING code RAD marking code RAD SMD marking code RAD
Contextual Info: LTR O A DESCRIPTION Initial Release Format and layout corrections DATE MO-DA-YR APPROVED 4/25/12 5/10/12 B. LaBelle B. LaBelle Aeroflex RAD, Inc. Proprietary UNLESS OTHERWISE SPECIFIED DIMENSIONS ARE IN INCHES PREPARED BY Dennis. Kiffe TOLERANCE ON DECIMALS

TDA9996

Abstract: TDA9995 TDA9993 TDA999x HDMI switch TDA9996A LQFP100 TSSOP38 TDA9996/TDA9995
Contextual Info: NXP HDMI 1.3a smart switch TDA999x family More digital-TV content and better picture quality – anytime, anywhere NXP’s smart 1.3a-compliant HDMI switches let you connect multiple HDMI inputs to receive more digital content with a better picture quality on your TV 12-bit Deep Color support . The unique

Contextual Info: S FSYA250D, FSYA250R Semiconductor y 27A, 200V, 0.100 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Description . 27A, 200V, rDS 0 N = 0.100£2 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs

95DW-24D15R2NL

Abstract: 95DW-48S15RNL
Contextual Info: Yuan Dean Scientific CO.,LTD 95DW SERIES Wide Input Voltage Range 20 Watt Dc-Dc Converter FEATURES: ●4:1Wide Input Voltage. ●Recognized By UL 60950-1 ●20 Watt Package. ●Efficiency To 80% ●PI Input Filter. ●1500Vdc Isolation ●MTBF:>1,500,000 hrs ●Operating Temperature:-40℃ TO +85℃

Contextual Info: y *“ * FSYC9160D, FSYC9160R Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs July 1998 Features Description . 47A, -100V, rDS 0 N = 0.053£2 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs

H8S/2626

Abstract: bosch servo module SM 10/20 H8S/2623 din iso 807 H008 hd64f2623fa bosch sm ac drive The Japanese Transistor Manual 2011 BT 151 PIN DIAGRAM SMR 40000
Contextual Info: REJ09B0275-0500 The revision list can be viewed directly by clicking the title page. The revision list summarizes the locations of revisions and additions. Details should always be checked by referring to the relevant text. 16 H8S/2626 Group, H8S/2623 Group,

siemens rs 1002

Abstract: siemens RS 1001 L siemens rs 1003 YD 1102 siemens rs 1007 yl 1042 siemens SRL 353 yl 1110 RS1002A tt 2074
Contextual Info: Equivalent Transmitter Tubes Type BY 1161 C 1108 Siemens type RS 826 RS 1007 Type SRL 353 SRS 456 Siemens type (RS 1001 L) RS 1002 A C 1112 C 1136 CQS 50-1 CQS 200-3 CQS 200-3 CQS 400-1 CQS 600-1 CV 2130 CV 2131 CV 3879 CV 1172 E 125 A E 250 A Q 160-1 Q 400-1

2E12

Abstract: 3E12 FSYE430D FSYE430D1 FSYE430D3 FSYE430R FSYE430R1 FSYE430R3 Rad Hard in Fairchild for MOSFET
Contextual Info: FSYE430D, FSYE430R Data Sheet Title SYE 0D, YE4 R bt adian rded, GR sist Cha el wer OSTs) utho eyrds terrpoon, minctor, dian rded, GR sist Cha el Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a

901-109

Abstract: jumo KER221 EN60584
Contextual Info: ±*ih * i î i 1 i ^ d b l S 5 0 3 ^ f e ìg 0086-0411 6666050 f t * (0086-0411)6666053 6666051 E - m a ¡ I : in f o @ j u m o - c h ina. c om W e b s ite :h t t p :// w w w . j umo-ch ina. c om 6666052 (JUMO) Ï S Î f i £ 9 0 . 1109 I *I 'JîU ? È îl0 ~ 4 0 0 °C

TAB1042

Abstract: 741 NON INVERTING AMPLIFIER
Contextual Info: ZARLINK Obsolescence Notice SEMICONDUCTOR This product is obsolete. This information is available for your convenience only. For more information on Zarlink’s obsolete products and replacement product lists, please visit http://products.zarlink.com/obsolete products/

2E12

Abstract: FSGYC160D1 FSGYC160R3 FSGYC160R4
Contextual Info: FSGYC160R Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs itle GL R bdin dd, GR isCha l wer STs) tho yds rd poon, mitor, diadd, GR is- Fairchild Star*Power Rad Hard MOSFETs have been specifically developed for high performance applications in a commercial or

1E14

Abstract: 2E12 FSPYC264D1 FSPYC264F FSPYC264R FSPYC264R3
Contextual Info: FSPYC264R, FSPYC264F Data Sheet June 2001 2001 Fairchild Semiconductor Corporation Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs itle PY 64R PY 64F bjec diat den GR ista Cha l wer SF tho yw s diat den GR ista Cha l wer SF , rchi Fairchild Star*Power Rad Hard

LSE B3 transformer

Abstract: smd diode 44a LSE B3 LSE B3 transformer datasheet LSE B4 transformer 1E14 2E12 FSGYC264D1 FSGYC264R3 FSGYC264R4
Contextual Info: FSGYC264R Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs itle GL R bdin dd, GR isCha l wer STs) tho yds erpoon, mitor, diadd, GR is- Fairchild Star*Power Rad Hard MOSFETs have been specifically developed for high performance applications in a commercial or

2E12

Abstract: FSGYE130D1 FSGYE130R3 FSGYE130R4
Contextual Info: FSGYE130R Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs itle GL R bdin dd, GR isCha l wer STs) tho yds erpoon, mitor, diadd, GR isCha l wer Fairchild Star*Power Rad Hard MOSFETs have been specifically developed for high performance

1E14

Abstract: 2E12 FSGJ164D1 FSGJ164R3 FSGJ164R4 Rad Hard in Fairchild for MOSFET
Contextual Info: FSGJ164R Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFET itle GJ R bjec diat den GR ista Cha l wer SF tho yw s diat den GR ista Cha l wer SF rchi Fairchild Star*Power Rad Hard MOSFETs have been specifically developed for high performance

1E14

Abstract: 2E12 FSGL230D1 FSGL230R3 FSGL230R4 Rad Hard in Fairchild for MOSFET
Contextual Info: FSGL230R Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs itle GL R bdin dd, GR isCha l wer STs) tho yds erpoon, mitor, diadd, GR is- Fairchild Star*Power Rad Hard MOSFETs have been specifically developed for high performance applications in a commercial or

1E14

Abstract: 2E12 FSGYC164D1 FSGYC164R4 Rad Hard in Fairchild for MOSFET
Contextual Info: FSGYC164R Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFET itle GY 64R bjec diat den GR ista Cha l wer SF tho yw s diat den GR ista Cha l wer SF rchi Fairchild Star*Power Rad Hard MOSFETs have been specifically developed for high performance