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Z80FG Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: Z60FG Z80FG Z100FG HIGH VOLTAGE RECTIFIERS 200nS RECOVERY AXIAL LEADED HERMETICALLY SEALED V I T rr in. mm .400(8.89)Max = 6000-10000V = 500mA = 200nS - 1.00(25.4) —— Min. .215(5.5) Max. •040±.003 (1.02±.08) ELECTRICAL CHARACTERISTICS AND MAXIMUM RAT NGS	OCR Scan	200ns z60fg z80fg z100fg +4000-10000v 500ma 600ma 50vdc	PDF
1N6515US Abstract: 1N6513US 1N6517 JV6512 1N6517US 1N6519 z15u Z60UFG Z100UFG 1N6512 Contextual Info: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 13 November 2009. MIL-PRF-19500/575D 13 August 2009 SUPERSEDING MIL-PRF-19500/575C 8 November 2006 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, HIGH VOLTAGE POWER RECTIFIER,	Original	mil-prf-19500/575d mil-prf-19500/575c 1n6512 1n6519 +111n6512us 1n6519us mil-prf-19500 1n6515us 1n6513us 1n6517 jv6512 1n6517us z15u z60ufg z100ufg	PDF

Catalog Datasheet

Type

Document Tags

PDF

Contextual Info: Z60FG Z80FG Z100FG HIGH VOLTAGE RECTIFIERS 200nS RECOVERY AXIAL LEADED HERMETICALLY SEALED V I T rr in. mm .400(8.89)Max = 6000-10000V = 500mA = 200nS - 1.00(25.4) —— Min. .215(5.5) Max. •040±.003 (1.02±.08) ELECTRICAL CHARACTERISTICS AND MAXIMUM RAT NGS

OCR Scan

200ns z60fg z80fg z100fg +4

PDF

1N6515US

Abstract: 1N6513US 1N6517 JV6512 1N6517US 1N6519 z15u Z60UFG Z100UFG 1N6512
Contextual Info: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 13 November 2009. MIL-PRF-19500/575D 13 August 2009 SUPERSEDING MIL-PRF-19500/575C 8 November 2006 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, HIGH VOLTAGE POWER RECTIFIER,

Original

mil-prf-19500/575d mil-prf-19500/575c 1n6512 1n6519 +11

PDF