WS57C Search Results

57C128FB-70

Abstract: WS57C128FB WS57C128FB-35 WS57C128FB-45 WS57C128FB-55 WS57C128FB-70
Contextual Info: WS57C128FB HIGH SPEED 16K x 8 CMOS EPROM KEY FEATURES • Very Fast Access Time • Standard EPROM Pinout • DIP and Surface Mount Packaging — 35 ns • Low Power Consumption • EPI Processing Available — Latch-up Immunity Up to 200 mA GENERAL DESCRIPTION

57C256f

Abstract: military part marking symbols 57C256 WS57C256F-55DMB WS57C256F-35J 57C256F-55 WS57C256F WS57C256F-35 WS57C256F-45 WS57C256F-55
Contextual Info: WS57C256F HIGH SPEED 32K x 8 CMOS EPROM KEY FEATURES • Immune to Latch-UP • Fast Access Time — t ACC = 35 ns — Up to 200 mA • ESD Protection Exceeds 2000 Volts • Available in 300 Mil DIP and PLDCC • DESC SMD No. 5962-86063 — t CE = 35 ns • Low Power Consumption

WS57C010F-70

Abstract: WS57C010F-55 WS27C010L
Contextual Info: WA F E R SC A L E I N T E G R A T I O N D E * c]5 3c]kiliQ □ □ □ □ 2 3 2 1 | 'f-Hé' WS57C010F ADVANCE INFORMATION WAFERSCALE INTEGRATION, INC. 1 Meg 128K x 8 BYTE-WIDE EPROM K EY FEATURES Ultra-High Performance • Fast Programming — 55 ns — 15 Seconds Typical

H12A5

Abstract: 22 35L CAPacitor 50/WS57C49C-25J
Contextual Info: WS57C49C HIGH SPEED 8Kx 8 CMOS PROM/RPROM KEY FEATURES • Ultra-Fast Access Time — *acc = 25 ns • Pin Compatible with Bipolar PROMs • Immune to Latch-UP — tc s = 12 ns — Up to 200 mA • Low Power Consumption • Fast Programming • ESD Protection Exceeds 2000 V

ws57c257

Abstract: ws57c65 WS*57c257
Contextual Info: WAFER SCALE I N T E GR A T I O N 3^E D B T S 3 T b cìa QQOObbT 7 H IlilA F WS57C210M PRELIMINARY WAFERS CALE INTEGRATION, INC. 1 Meg 64K x 16 EPROM MODULE KEY FEATURES • Fast Programming • High-Density 64K x 16 CMOS EPROM Module — • Utilizes Four WS57C256F High-Speed

Contextual Info: WS57C71C HIGH SPEED 32K x 8 CMOS PROM/FtPROM KEY FEATURES • Immune to Latch-UP • Ultra-Fast Access Time — 35 ns — Up to 200 mA • Low Power Consumption • Fast Programming • ESD Protection Exceeds 2000V • Available in 300 Mil DIP and PLDCC GENERAL DESCRIPTION

28-PIN CERDIP

Abstract: S57 SMD
Contextual Info: WS57C256F HIGH SPEED 32K x 8 CMOS EPROM KEY FEATURES • Immune to Latch-UP • Fast Access Time — tACC = 35 ns — Up to 200 mA ESD Protection Exceeds 2000 Volts • Available in 300 Mil DIP and PLDCC • DESC SMD No. 5962-86063 — t CE = 35 ns • • Low Power Consumption

WS57C49B

Contextual Info: WS57C49C HIGH SPEED 8Kx 8 CMOS PROM/RPROM KEY FEATURES • Ultra-Fast Access Time — t A c c = 25ns * Pin Compatible with Bipolar PROMs • Immune to Latch-UP — t c s = 12 ns — Up to 200 mA • Low Power Consumption • ESD Protection Exceeds 2000 V • Fast Programming

WSI eprom Programming algorithm

Contextual Info: ^ALE W AFFR INTEGRATION 99D 0 0 136 DT-Í/6-/3-Z5 WS57C43B ADVANCE INFORMATION WAFER WAFERSCALE INTEGRATION, INC 4K X 8 CMOS PROM SCALE KEY FEATURES Low Power Consumption — 300 mW Active Power 20 MHz — Up to 200 mA Fast Programming • Available in 300 Mil Dip

Contextual Info: = = = 5 HE D " • cì 5 3 c]bcì 0 DG01SM7 D3S ■ ÜJAF WS57C71C ÜIAFER SCALE INTEGRATION HIGH SPEED 32K x 8 CMOS PROM/RPROM K E Y FEATURES • Ultra-Fast Access Time • Immune to Latch-UP — 35 ns — Up to 200 mA • Low Power Consumption • Fast Programming

TJA11

Contextual Info: WA F E R SCALE 3^E D INTEGRATION 'ISSTbTD 0DG0S3Ö 3 lilAF WS57C49C ADVANCE INFORMATION WAFERS CALE INTEGRATION, INC. HIGH SPEED 8K x 8 CM OS PROM/RPROM K EY FEATURES • Pin Compatible with AM27S49 and MB7144 Bipolar PROMs • Ultra-Fast Access Time — 25 ns

AM27S45

Abstract: smd marking a7 smd a10 smd marking A8 CY7C245 smd a7 smd transistor a4 smd transistor A7 SMD a7 Transistor SMD A8
Contextual Info: WS57C45 MILITARY 2K x 8 REGISTERED CMOS PROM/RPROM KEY FEATURES • Ultra-Fast Access Time • DESC SMD Nos. 5962-88735/5962-87529 • Pin Compatible with AM27S45 and — 35 ns Setup — 15 ns Clock to Output CY7C245 • Immune to Latch-UP • Low Power Consumption

N82HS1281

Abstract: A12 marking cerdip z PACKAGE CERDIP 28 PINS
Contextual Info: WS57C51C MILITARY HIGH SPEED 16K x 8 CMOS PROM/RPROM KEY FEATURES • Ultra-Fast Access Time • Pin Compatible with Am27S51 — 45 ns and N82HS1281 • Immune to Latch-Up • Low Power Consumption • Fast Programming — Up to 200 mA • ESD Protection Exceeds 2000 V

Contextual Info: WS57C71C-35J IL08 C-MOS 256 K 32 K x 8 -BIT EPROM 4 3 2 1 32 31 30 —TOP VIEW— NC VDD 29 28 27 26 25 24 23 22 21 NC GND NC NC 14 15 16 17 18 19 20 5 6 7 8 9 10 11 12 13 PINS CS1/VPP CS2 CS3 D0 - D7 1 x x VPP VPP 1 x HI-Z PIN NO. I/O SIGNAL PIN NO. I/O

WS57C43

Abstract: WS57C128 WS57C191 wafer equipment
Contextual Info: Document: WSI-1022 September 22, 1998 Subject: Critical Process Change Notification High Speed Memory 35ns and slower only Device Types: WS57C128, WS57C191, WS57C291, WS57C43, WS57C49, WS57C51 - This change effects speeds 35ns and slower only (-35, -45, -55, -70

WS57C191-55

Abstract: 24PIN
Contextual Info: - 7C 19 1 m % ft £ X4 «/ y OC TMC nax ns) TCAC max (ns) TOH oax (ns) tg TOE max (ns) TOD VDD (ns) (V) m 1r\ A I DD/STANDBY (mA) VIL max (V) VIH rain (V) tuu/mæ« et Ci Bax (pF) V O L / I VOL Eiax (V/ b A) V O H / 1 VOH min (V/iA) WS57C 1 9 1-40 WAFERSCALE

eprom 27c256

Abstract: 27C256 atmel 27C256 hitachi 27C256 27c256 intel WSI Cross Reference 27c256 toshiba ti 27c256 hitachi 27c256 oki cross
Contextual Info: EPROM CROSS REFERENCE AMD WSI OKI WSI Am27C128 Am27C256 Am27H256 WS57C128FB WS57C256F WS57C256F MSM27C256 WS57C256F SANYO WSI LA7620 WS57C64F ATMEL WSI AT27HC256/L AT27HC256R/R WS57C256F WS57C256F SGS-T WSI M27128/A M27256 WS57C128FB WS57C256F CATALYST WSI

Contextual Info: WS57C43C HIGH SPEED 4K x 8 CMOS PROM/RPROM KEY FEATURES • Ultra-Fast Access Time • Pin Compatible with 4K x 8 Bipolar PROMs • Immune to Latch-UP — t ACC = 25 ns — t CS = 12 ns — Up to 200 mA • Low Power Consumption • Fast Programming • ESD Protection Exceeds 2000 V

Contextual Info: WS57C51C HIGH SPEED 16K x 8 CMOS PROM/RPROM KEY FEATURES • Very Fast Access Time • Pin Compatible with Am27S51 — 35 ns and N82HS1281 • Immune to Latch-Up • Low Power Consumption • Fast Programming — Up to 200 mA • ESD Protection Exceeds 2000 V

Contextual Info: WS57C71C HIGH SPEED 32K x 8 CMOS PROM/RPROM K E Y FEATURES • Ultra-Fast Access Time • Immune to Latch-UP — 35 ns — Up to 200 mA • Low Power C onsum ption • Fast Program m ing • ESD Protection Exceeds 2000V GENERAL D ESCRIPTION The WS57C71C is a High Performance 256K UV Erasable Electrically Re-Programmable Read Only Memory

Contextual Info: WS57C128F HIGH SPEED 16Kx 8 CMOS EPROM K E Y FEATURES • Fast Access Time • EPi Processing — 55 ns — Latch-up Immunity Up to 200 mA • Low Power Consumption • DESC SMD No. 5962-87661 • Standard EPROM Pinout GENERAL D ESCRIPTION The WS57C128F is a High Performance 128K UV Erasable Electrically Programmable Read Only Memory. It is

DA10

Abstract: WS57C64F WS57C64F-55 WS57C64F-55D WS57C64F-55J WS57C64F-70 WS57C64F-70CMB WS57C64F-70D WS57C64F-70DI SMD Capacitor symbols
Contextual Info: WS57C64F HIGH SPEED 8K x 8 CMOS EPROM KEY FEATURES • Fast Access Time • EPI Processing — 55 ns — Latch-Up Immunity Up to 200 mA • Low Power Consumption • DESC SMD No. 8510207 * Standard EPROM Pinout • Available in PLDCC GENERAL DESCRIPTION The WS57C64F is an extrem ely HIGH PERFORMANCE 64K UV Erasable E lectrically Program m able Read O nly

Contextual Info: WS57C45 HIGH-SPEED 2K x 8 REGISTERED CMOS PROM/RPROM KEY FEATURES • Ultra-Fast Access Time • DESC SMD Nos. 5962-88735/5962-87529 • Pin Compatible with AM27S45 and — 25 ns Setup — 12 ns Clock to Output CY7C245 • Immune to Latch-UP • Low Power Consumption

bipolar PROM

Contextual Info: WS57C43C MILITARY HIGH SPED 4K x 8 CMOS PROM/RPROM KEY FEATURES • Pin Compatible with 4K x 8 Bipolar PROMs • Immune to Latch-UP • Ultra-Fast Access Time — *ACC = 3 5 ns — t cs = 20 ns — Up to 200 mA • Low Power Consumption • Fast Programming