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    VQ2004J Search Results

    VQ2004J Datasheets (6)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    VQ2004J
    Vishay Telefunken Original PDF 49.51KB 4
    VQ2004J
    Unknown FET Data Book Scan PDF 60.21KB 1
    VQ2004J
    Unknown Semiconductor Master Cross Reference Guide Scan PDF 123.38KB 1
    VQ2004J
    Unknown Shortform Datasheet & Cross References Data Short Form PDF 85.39KB 1
    VQ2004J
    Siliconix MOSPOWER Design Data Book 1983 Scan PDF 33.05KB 1
    VQ2004J
    Vishay Siliconix Shortform Siliconix Datasheet Short Form PDF 181.85KB 1
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    VQ2004J Price and Stock

    Vishay Siliconix

    Vishay Siliconix VQ2004J

    0.41 A, 60 V, 5 OHM, 4 CHANNEL, P-CHANNEL, SI, POWER, MOSFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components VQ2004J 401
    • 1 $11.00
    • 10 $11.00
    • 100 $11.00
    • 1000 $5.94
    • 10000 $5.94
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    VQ2004J Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    quad p-CHANNEL

    Contextual Info: VQ2004J Vishay Siliconix Quad P-Channel 60-V D-S MOSFET PRODUCT SUMMARY V(BR)DSS Min (V) rDS(on) Max (£2) v GS(th) (V ) b (A) -6 0 5 V QS = - 1 0 V - 2 t o -4 .5 -0.41 FEATURES BENEFITS APPLICATIONS • • • • • • • • • • • Drivers: Relays, Solenoids, Lamps,


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    vq2004js-04279--16-jul-01quad p-channel PDF

    b0725

    Contextual Info: Tem ic VQ2004J Siliconix P-Channel Enhancement-Mode MOS Transistor Product Summary V BR DSS M in (V) *DS(on) M a x (Q ) V GS(th) (V) I d (A) -6 0 5 @ V g s = -10 V - 2 to - 4 .5 -0 .4 1 Features Benefits Applications • • • • • • • • • •


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    vq2004jp-37655--revb0725 PDF

    VQ2004J

    Contextual Info: VQ2004J P-Channel Enhancement-Mode MOSFET Transistor Product Summary V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) –60 5 @ VGS = –10 V –2 to –4.5 –0.41 Features Benefits Applications D D D D D D D D D D D Drivers: Relays, Solenoids, Lamps,


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    vq2004jp-37655--rev25-jul-94 PDF

    quad p-CHANNEL

    Abstract: VQ2004J
    Contextual Info: VQ2004J Vishay Siliconix Quad P-Channel 60-V D-S MOSFET PRODUCT SUMMARY V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) –60 5 @ VGS = –10 V –2 to –4.5 –0.41 FEATURES BENEFITS APPLICATIONS D D D D D D D D D D D Drivers: Relays, Solenoids, Lamps,


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    vq2004js-04279--rev16-jul-01quad p-channel PDF

    VQ2004J

    Contextual Info: VQ2004J P-Channel Enhancement-Mode MOSFET Transistor Product Summary V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) –60 5 @ VGS = –10 V –2 to –4.5 –0.41 Features Benefits Applications D D D D D D D D D D D Drivers: Relays, Solenoids, Lamps,


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    vq2004jp-37655--rev25-jul-94 PDF

    VQ2004J

    Contextual Info: VQ2004J P-Channel Enhancement-Mode MOS Transistor Product Summary V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) –60 5 @ VGS = –10 V –2 to –4.5 –0.41 Features Benefits Applications D D D D D D D D D D D Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories,


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    vq2004jp-37655--rev25-jul-94 PDF

    VP2410

    Contextual Info: Ænsgga VPDV SERIES DIE P-Channel Enhancement-Mode MOS Transistors r“5r PERFORMANCE CURVES PART NUMBER V BR DSS VPDV1CHP 100 5 • • • • VP0808B/L/M VP1008B/L/M VQ2004J (\/PDV10 x 4) VQ2006J (VPDV10 X 4) VPDV10 VPDV2CHP 240 10 • • • TP2010L


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    vp0808b/l/mvp1008b/l/mvq2004j\/pdv10+6vq2006jvpdv10tp2010ltp2410lvp2410lvp2410 PDF

    b0725

    Contextual Info: Tem ic VQ2004J Siliconix P-Channel Enhancement-Mode MOS Transistor Product Summary V BR Dss Min (V) rDS<on) Max (Q) V g s (Ui) (V) I d (A) -6 0 5 @ V o s = -1 0 V - 2 to -4 .5 -0.41 Features Benefits • • • • • • • • • • High-Side Switching


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    vq2004j2004jp-37655--revb0725 PDF

    VQ2004J

    Contextual Info: VQ2004J Siliconix PĆChannel EnhancementĆMode MOS Transistor Product Summary V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) -60 5 @ VGS = -10 V -2 to -4.5 -0.41 Features Benefits Applications D D D D D D D D D D D Drivers: Relays, Solenoids, Lamps, Hammers,


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    vq2004j37655--rev PDF

    VQ2004J

    Abstract: quad p-CHANNEL
    Contextual Info: VQ2004J Vishay Siliconix Quad P-Channel 60-V D-S MOSFET PRODUCT SUMMARY V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) –60 5 @ VGS = –10 V –2 to –4.5 –0.41 FEATURES BENEFITS APPLICATIONS D D D D D D D D D D D Drivers: Relays, Solenoids, Lamps,


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    vq2004j18-jul-08quad p-channel PDF

    Contextual Info: Tem ic VQ2004J S e m i c o n d u c t o r s P-Channel Enhancement-Mode MOSFET Transistor Product Summary V B R D S S M i n ( V ) rn s iim ) M a x (Q ) V e s ta » (V ) I d (A ) -6 0 5 V GS = - 1 0 V - 2 to - 4 .5 -0 .4 1 Features Benefits • • • •


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    vq2004jp-37655--rev25-jul-94p-37655-- PDF

    quad p-CHANNEL

    Abstract: vq2004j
    Contextual Info: VQ2004J Vishay Siliconix Quad P-Channel 60-V D-S MOSFET PRODUCT SUMMARY V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) –60 5 @ VGS = –10 V –2 to –4.5 –0.41 FEATURES BENEFITS APPLICATIONS D D D D D D D D D D D Drivers: Relays, Solenoids, Lamps,


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    vq2004j08-apr-05quad p-channel PDF

    Contextual Info: T em ic Semiconductors S08 DMOS FETs T0220 T052 TO237 T092 2 lead T092 (3 lead) Low-Power MOS N-Channel Enhancement-Mode (continued) DMOS FETs - Low-Power MOS P-Channel Enhancement-Mode j mm>xm Ì Q K ? Ì |g ir ( M ) 14-Pin Sidebraze (P) and Plastic (J)


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    t022014-pinvq2001jvq200ip+6vq2004jt0236tp0101ttp0202ttp06i0tvp06i0t PDF

    vp0300m

    Abstract: VP0300B VP0808B VP0808L VP0808M VP1008B VP1008L VP1008M VQ2001P VQ2004P
    Contextual Info: MOSPOWER Selector Guide Continued P-Channel MOSPOWER Device Breakdown Voltage (Volts) •100 rDS(on) (Ohms) >D Continuous (Amps) 5.0 5.0 2.5 0.9 0.9 -8 0 -3 0 5.0 5.0 2.5 -1 0 0 -8 0 Powor Dissipation (Watts) Part Number 6.25 6.25 6.25 VP1008B VP0808B VP0300B


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    vp1008bvp0808bvp0300bo-237+8vp1008mvp0808mvp0300mvp1008lvp0808l14-plnvq2001pvq2004p PDF

    VP0808B

    Abstract: VP0300B VP0300M VP0808L VP0808M VP1008B VP1008L VP1008M VQ2001P VQ2004P
    Contextual Info: MOSPOWER Selector Guide Continued P-Channel MOSPOWER Device Breakdown Voltage (Volts) •100 rDS(on) (Ohms) >D Continuous (Amps) 5.0 5.0 2.5 0.9 0.9 -8 0 -3 0 5.0 5.0 2.5 0.37 0.37 0.48 -1 0 0 -8 0 5.0 5.0 -9 0 -6 0 -3 0 5.0 5.0 -90 -60 -30 5.0 5.0 2.0 -8 0


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    vp1008bvp0808bvp0300bo-237+8vp1008mvp0808mvp0300mvp1008lvp0808l14-plnvq2001pvq2004p PDF

    BSR78

    Abstract: VP0300M VP0808L 041 itt diode VP0300B VP0808B VP0808M VP1008B VP1008L VP1008M
    Contextual Info: MOSPOWER Selector Guide Continued P-Channel MOSPOWER Device Breakdown Voltage (Volts) rDS(on) (Ohms) >D Continuous (Amps) •100 -8 0 -3 0 5.0 5.0 2.5 0.9 0.9 100 -8 0 -3 0 5.0 5.0 2.5 -1 0 0 -8 0 Powor Dissipation (Watts) Part Number 6.25 6.25 6.25 VP1008B


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    vp1008bvp0808bvp0300bo-237+8vp1008mvp0808mvp0300mvp1008lvp0808l14-plnbsr78041 itt diode PDF

    TCA780

    Abstract: TFK U 111 B TFK U 4614 B TFK S 186 P TFK U 217 B TFK BP w 41 n TFK BPW 41 N Tfk 880 TFK 148 TDSR 5150 G
    Contextual Info: Industry Part Number 1N3245 1N3611GP 1N3612GP 1N3613GP 1N3614GP 1N3725 1N3957GP 1N4001GP 1N4002GP 1N4003GP 1N4004GP 1N4005GP 1N4006GP 1N4007GP 1N4245GP 1N4246GP 1N4247GP 1N4248GP 1N4249GP 1N4678.1N4717 1N4728A.1N4761A 1N4933GP 1N4934GP 1N4935GP 1N4936GP


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    1n32451n3611gp1n3612gp1n3613gp+161n3614gp1n37251n3957gp1n4001gp1n4002gp1n4003gptca780tfk u 111 btfk u 4614 btfk s 186 ptfk u 217 btfk bp w 41 ntfk bpw 41 ntfk 880tfk 148tdsr 5150 g PDF

    VPDS06

    Contextual Info: VPDS06 CT*Siliconix incorporated TYPICAL CHARACTERISTICS T ransconductance C pF I d ÌA) V DS (V) On-Resistance vs. Junction Temperature 's (A) V SD (V) Revised (02/11/91) -0 .3 -0 .6 -0 .9 -1 .2 V GS (V) -1 .5 -1 .8 -2.1 6-203 ffX 'Sificonix VPDS06 in c o r p o r a te d


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    vpds066-204vp1008bvpdv10 PDF

    VP0808M

    Abstract: VQ2006P VP0300B VP0300M VP0808B VP0808L VP1008B VP1008L VP1008M VQ2001P
    Contextual Info: MOSPOWER Selector Guide Continued P-Channel MOSPOWER Device Breakdown Voltage (Volts) •100 -8 0 -3 0 rDS(on) (Ohms) >D Continuous (Amps) 5.0 5.0 2.5 0.9 0.9 -8 0 -3 0 5.0 5.0 2.5 0.37 0.37 0.48 -1 0 0 -8 0 5.0 5.0 -9 0 -6 0 -3 0 -90 -60 -30 1.3 Powor Dissipation


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    vp1008bvp0808bvp0300bo-237+8vp1008mvp0808mvp0300mvp1008lvp0808l14-plnvq2006pvq2001p PDF

    VP0808B

    Abstract: VP0300B VP0300M VP0808L VP0808M VP1008B VP1008L VP1008M VQ2001P VQ2004P
    Contextual Info: MOSPOWER Selector Guide Continued P-Channel MOSPOWER Device Breakdown Voltage (Volts) •100 rDS(on) (Ohms) >D Continuous (Amps) 5.0 5.0 2.5 0.9 0.9 -8 0 -3 0 5.0 5.0 2.5 -1 0 0 -8 0 Powor Dissipation (Watts) Part Number 6.25 6.25 6.25 VP1008B VP0808B VP0300B


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    vp1008bvp0808bvp0300bo-237+8vp1008mvp0808mvp0300mvp1008lvp0808l14-plnvq2001pvq2004p PDF

    VP100

    Abstract: VP1001P VP0300B VP0300M VP0808B VP0808L VP0808M VP1008B VP1008L VP1008M
    Contextual Info: MOSPOWER Selector Guide Continued P-Channel MOSPOWER Device Breakdown Voltage (Volts) •100 rDS(on) (Ohms) >D Continuous (Amps) 5.0 5.0 2.5 0.9 0.9 5.0 5.0 2.5 Powor Dissipation (Watts) Part Number 6.25 6.25 6.25 VP1008B VP0808B VP0300B 0.37 0.37 0.48 1.0


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    vp1008bvp0808bvp0300bo-237+8vp1008mvp0808mvp0300mvp1008lvp0808l14-plnvp100vp1001p PDF

    VP0808M

    Abstract: IN400 VP0300B VP0300M VP0808B VP0808L VP1008B VP1008L VP1008M VQ2001P
    Contextual Info: MOSPOWER Selector Guide Continued P-Channel MOSPOWER Device Breakdown Voltage (Volts) rDS(on) (Ohms) >D Continuous (Amps) •100 -8 0 -3 0 5.0 5.0 2.5 0.9 0.9 100 -8 0 -3 0 5.0 5.0 2.5 -1 0 0 -8 0 Powor Dissipation (Watts) Part Number 6.25 6.25 6.25 VP1008B


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    vp1008bvp0808bvp0300bo-237+8vp1008mvp0808mvp0300mvp1008lvp0808l14-plnin400vq2001p PDF

    VP0300M

    Abstract: k 2541 30v IN400 VP0300B VP0808B VP0808L VP0808M VP1008B VP1008L VP1008M
    Contextual Info: MOSPOWER Selector Guide Continued P-Channel MOSPOWER Device Breakdown Voltage (Volts) •100 rDS(on) (Ohms) >D Continuous (Amps) 5.0 5.0 2.5 0.9 0.9 -8 0 -3 0 5.0 5.0 2.5 -1 0 0 -8 0 Powor Dissipation (Watts) Part Number 6.25 6.25 6.25 VP1008B VP0808B VP0300B


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    vp1008bvp0808bvp0300bo-237+8vp1008mvp0808mvp0300mvp1008lvp0808l14-plnk 2541 30vin400 PDF

    TEMIC K153P

    Abstract: TSHF5471 tfmw5380 dn1328 tdsr5156 dn904 TDSR5153 HS0038 IR sensor TLVD4900 TCDF1910
    Contextual Info: Quality and Reliability Report 1997 TEMIC Semiconductors 07.97 Table of Contents TEMIC Quality Policy .1 Quality System .2


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    wn1053wn1087-18rwn1087-tr1wn1090+16wn1125wn1142wn1158-tawn1165-tr1wn1170wn934temic k153ptshf5471tfmw5380dn1328tdsr5156dn904tdsr5153hs0038 ir sensortlvd4900tcdf1910 PDF