VF20120S Search Results
VF20120S Datasheets (5)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| VF20120S-E3/45 | Vishay Semiconductors | Diodes, Rectifiers - Single, Discrete Semiconductor Products, DIODE SCHOTTKY 120V 20A ITO220AB | Original | 5 | |||
| VF20120S-E3/4W | Vishay Semiconductors | Diodes, Rectifiers - Single, Discrete Semiconductor Products, DIODE SCHOTTKY 120V 20A ITO220AB | Original | 5 | |||
| VF20120SG-E3/4W | Vishay Semiconductors | Diodes, Rectifiers - Single, Discrete Semiconductor Products, DIODE SCHOTTKY 120V 20A ITO220AB | Original | 5 | |||
| VF20120SG-M3/4W | Vishay Semiconductor Diodes Division | Discrete Semiconductor Products - Diodes - Rectifiers - Single - DIODE SCHOTTKY 20A 120V ITO220AB | Original | 84.89KB | |||
| VF20120S-M3/4W | Vishay Semiconductor Diodes Division | Discrete Semiconductor Products - Diodes - Rectifiers - Single - DIODE SCHOTTKY 20A 120V ITO220AB | Original | 85.03KB |
VF20120S Price and Stock
Vishay Semiconductors VF20120S-M3-4WDIODE SCHOTTKY 120V 20A ITO220AB |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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VF20120S-M3-4W | Tube | 1,000 |
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Buy Now | ||||||
Vishay Semiconductors VF20120S-E3-45DIODE SCHOTTKY 120V 20A ITO220AB |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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VF20120S-E3-45 | Tube | 1,000 |
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Buy Now | ||||||
Vishay Semiconductors VF20120S-E3-4WDIODE SCHOTTKY 120V 20A ITO220AB |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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VF20120S-E3-4W | Tube | 1,000 |
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Buy Now | ||||||
Vishay Semiconductors VF20120SG-E3-45DIODE SCHOTTKY 120V 20A ITO220AB |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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VF20120SG-E3-45 | Tube | 50 |
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Buy Now | ||||||
Vishay Semiconductors VF20120SG-E3-4WDIODE SCHOTTKY 120V 20A ITO220AB |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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VF20120SG-E3-4W | Tube | 1,000 |
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Buy Now | ||||||
VF20120S Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
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Contextual Info: New Product VF20120SG Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A FEATURES TMBS • Trench MOS Schottky technology ITO-220AB • Low forward voltage drop, low power losses • High efficiency operation |
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VF20120SG ITO-220AB 22-B106 2002/95/EC 2002/96/EC 2002/95/EC. 2011/65/EU. JS709A | |
vf20120sg
Abstract: J-STD-002B
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Original |
V20120SG, VF20120SG, VB20120SG VI20120SG ITO-220AB O-220AB V20120SG J-STD-020C, O-263AB O-220AB, vf20120sg J-STD-002B | |
J-STD-002Contextual Info: New Product V20120S, VF20120S, VB20120S & VI20120S Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A FEATURES TMBS • Trench MOS Schottky technology ITO-220AB TO-220AB • Low forward voltage drop, low power |
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V20120S, VF20120S, VB20120S VI20120S ITO-220AB O-220AB V20120S J-STD-020, O-263AB O-220AB, J-STD-002 | |
vf20120sg
Abstract: J-STD-002
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Original |
V20120SG, VF20120SG, VB20120SG VI20120SG ITO-220AB O-220AB V20120SG J-STD-020, O-263AB VF20120SG vf20120sg J-STD-002 | |
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Contextual Info: New Product VF20120SG Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A FEATURES TMBS • Trench MOS Schottky technology ITO-220AB • Low forward voltage drop, low power losses • High efficiency operation |
Original |
VF20120SG ITO-220AB 22-B106 2002/95/EC 2002/96/EC 2011/65/EU 2002/95/EC. 2011/65/EU. | |
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Contextual Info: New Product VF20120S Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A FEATURES TMBS • Trench MOS Schottky technology ITO-220AB • Low forward voltage drop, low power losses • High efficiency operation |
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VF20120S ITO-220AB 22-B106 2002/95/EC 2002/96/EC 2011/65/EU 2002/95/EC. 2011/65/EU. | |
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Contextual Info: New Product V20120S, VF20120S, VB20120S & VI20120S Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A FEATURES TMBS • Trench MOS Schottky technology ITO-220AB TO-220AB • Low forward voltage drop, low power |
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V20120S, VF20120S, VB20120S VI20120S ITO-220AB O-220AB V20120S J-STD-020, O-263AB 22-B106 | |
J-STD-002
Abstract: 1412D
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Original |
V20120S, VF20120S, VB20120S VI20120S ITO-220AB O-220AB V20120S J-STD-020, O-263AB 22-B106 J-STD-002 1412D | |
v20120sContextual Info: V20120S, VF20120S & VI20120S New Product Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.491 V at IF = 5 A FEATURES ITO-220AB TO-220AB • Trench MOS Schottky Technology • Low forward voltage drop, low power losses |
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V20120S, VF20120S VI20120S O-220AB ITO-220AB V20120S 2002/95/EC 2002/96/EC O-262AA v20120s | |
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Contextual Info: V20120SG-E3, VF20120SG-E3, VB20120SG-E3, VI20120SG-E3 www.vishay.com Vishay General Semiconductor High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A FEATURES TMBS • Trench MOS Schottky technology TO-220AB ITO-220AB • Low forward voltage drop, low power losses |
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V20120SG-E3, VF20120SG-E3, VB20120SG-E3, VI20120SG-E3 O-220AB ITO-220AB J-STD-020, O-263AB V20120SG 22-B106 | |
J-STD-002
Abstract: VF20120SG
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Original |
V20120SG, VF20120SG, VB20120SG VI20120SG ITO-220AB O-220AB J-STD-020, O-263AB V20120SG 22-B106 J-STD-002 VF20120SG | |
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Contextual Info: New Product V20120S, VF20120S, VB20120S & VI20120S Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A FEATURES TMBS • Trench MOS Schottky technology ITO-220AB TO-220AB • Low forward voltage drop, low power |
Original |
V20120S, VF20120S, VB20120S VI20120S O-220AB ITO-220AB V20120S VF20120S J-STD-020, O-263AB | |
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Contextual Info: New Product VF20120SG Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A FEATURES TMBS • Trench MOS Schottky technology ITO-220AB • Low forward voltage drop, low power losses • High efficiency operation |
Original |
VF20120SG ITO-220AB 22-B106 2002/95/EC 2002/96/EC 2011/65/EU 2002/95/EC. 2011/65/EU. | |
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Contextual Info: New Product VF20120SG Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A FEATURES TMBS • Trench MOS Schottky technology ITO-220AB • Low forward voltage drop, low power losses • High efficiency operation |
Original |
VF20120SG ITO-220AB 22-B106 2002/95/EC 2002/96/EC 11-Mar-11 | |
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Contextual Info: New Product VF20120S Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A FEATURES TMBS • Trench MOS Schottky technology ITO-220AB • Low forward voltage drop, low power losses • High efficiency operation |
Original |
VF20120S ITO-220AB 22-B106 2002/95/EC 2002/96/EC 11-Mar-11 | |
vf20120sgContextual Info: V20120SG & VF20120SG New Product Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.540 V at IF = 5 A FEATURES ITO-220AB TO-220AB • Trench MOS Schottky Technology • Low forward voltage drop, low power losses |
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V20120SG VF20120SG O-220AB ITO-220AB 2002/95/EC 2002/96/EC O-220AB ITO-220AB vf20120sg | |
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Contextual Info: V20120S-E3, VF20120S-E3, VB20120S-E3, VI20120S-E3 www.vishay.com Vishay General Semiconductor High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A FEATURES TMBS TO-220AB • Trench MOS Schottky technology ITO-220AB • Low forward voltage drop, low power losses |
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V20120S-E3, VF20120S-E3, VB20120S-E3, VI20120S-E3 O-220AB ITO-220AB J-STD-020, O-263AB V20120S VF20120S | |
J-STD-002
Abstract: V20120
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Original |
V20120S, VF20120S, VB20120S VI20120S ITO-220AB O-220AB V20120S J-STD-020, O-263AB 22-B106 J-STD-002 V20120 | |
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Contextual Info: New Product VF20120S Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A FEATURES TMBS • Trench MOS Schottky technology ITO-220AB • Low forward voltage drop, low power losses • High efficiency operation |
Original |
VF20120S ITO-220AB 22-B106 2002/95/EC 2002/96/EC 2002/95/EC. 2011/65/EU. JS709A | |
J-STD-002
Abstract: VF20120SG
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Original |
V20120SG, VF20120SG, VB20120SG VI20120SG ITO-220AB O-220AB J-STD-020, O-263AB V20120SG 22-B106 J-STD-002 VF20120SG | |
V20120S
Abstract: J-STD-002B 1412D
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Original |
V20120S, VF20120S, VB20120S VI20120S ITO-220AB O-220AB V20120S J-STD-020C, O-263AB O-220AB, V20120S J-STD-002B 1412D | |
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Contextual Info: New Product VF20120S Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A FEATURES TMBS • Trench MOS Schottky technology ITO-220AB • Low forward voltage drop, low power losses • High efficiency operation |
Original |
VF20120S ITO-220AB 22-B106 2002/95/EC 2002/96/EC 2011/65/EU 2002/95/EC. 2011/65/EU. | |
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Contextual Info: VF20120S www.vishay.com Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A FEATURES TMBS • Trench MOS Schottky technology ITO-220AB • Low forward voltage drop, low power losses • High efficiency operation |
Original |
VF20120S ITO-220AB 22-B106 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
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Contextual Info: New Product V20120SG, VF20120SG, VB20120SG & VI20120SG Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A FEATURES TMBS • Trench MOS Schottky technology ITO-220AB TO-220AB • Low forward voltage drop, low power |
Original |
V20120SG, VF20120SG, VB20120SG VI20120SG ITO-220AB O-220AB J-STD-020, O-263AB V20120SG 22-B106 | |