V20120S Search Results
V20120S Datasheets (6)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| V20120S-E3/4W | Vishay Semiconductors | Diodes, Rectifiers - Single, Discrete Semiconductor Products, DIODE SCHOTTKY 120V 20A TO220AB | Original | 5 | |||
| V20120SG-E3/4W | Vishay Semiconductors | Diodes, Rectifiers - Single, Discrete Semiconductor Products, DIODE SCHOTTKY 120V 20A TO220AB | Original | 5 | |||
| V20120SGHM3/4W | Vishay Semiconductor Diodes Division | Discrete Semiconductor Products - Diodes - Rectifiers - Single - DIODE SCHOTTKY 20A 120V TO-220AB | Original | 142.82KB | |||
| V20120SG-M3/4W | Vishay Semiconductor Diodes Division | Discrete Semiconductor Products - Diodes - Rectifiers - Single - DIODE SCHOTTKY 20A 120V TO-220AB | Original | 142.82KB | |||
| V20120SHM3/4W | Vishay Semiconductor Diodes Division | Discrete Semiconductor Products - Diodes - Rectifiers - Single - DIODE SCHOTTKY 20A 120V TO-220AB | Original | 142.74KB | |||
| V20120S-M3/4W | Vishay Semiconductor Diodes Division | Discrete Semiconductor Products - Diodes - Rectifiers - Single - DIODE SCHOTTKY 20A 120V TO-220AB | Original | 142.74KB |
V20120S Price and Stock
Vishay Intertechnologies V20120SG-M3/4W- Rail/Tube (Alt: V20120SG-M3/4W) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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V20120SG-M3/4W | Tube | 7 Weeks | 8,000 |
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Buy Now | |||||
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V20120SG-M3/4W | Tube | 8,000 |
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Buy Now | ||||||
Vishay Intertechnologies V20120S-E3/4W- Rail/Tube (Alt: V20120S-E3/4W) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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V20120S-E3/4W | Tube | 7 Weeks | 8,000 |
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Buy Now | |||||
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V20120S-E3/4W | Bulk | 8,000 |
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Buy Now | ||||||
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V20120S-E3/4W | Ammo Pack | 8,000 |
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V20120S-E3/4W | 8,000 |
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Get Quote | |||||||
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V20120S-E3/4W | 23 Weeks | 1,000 |
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Get Quote | ||||||
Vishay Intertechnologies V20120S-M3/4W- Rail/Tube (Alt: V20120S-M3/4W) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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V20120S-M3/4W | Tube | 7 Weeks | 8,000 |
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Buy Now | |||||
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V20120S-M3/4W | Tube | 8,000 |
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Buy Now | ||||||
Vishay Intertechnologies V20120SG-E3/4W20A,120V,TRENCH SKY RECT. - Rail/Tube (Alt: V20120SG-E3/4W) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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V20120SG-E3/4W | Tube | 7 Weeks | 8,000 |
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Buy Now | |||||
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V20120SG-E3/4W | Bulk | 8,000 |
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Buy Now | ||||||
Vishay Siliconix V20120S-E3/4WDIODE SCHOTTKY 120V 20A TO220AB |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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V20120S-E3/4W | Bulk | 5 |
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Get Quote | ||||||
V20120S Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: New Product V20120SG, VI20120SG Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A FEATURES TMBS TO-220AB • Trench MOS Schottky technology TO-262AA • Low forward voltage drop, low power losses |
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v20120sgvi20120sgo-220abo-262aa+4 | |
vf20120sg
Abstract: J-STD-002B
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Original |
v20120sgvf20120sgvb20120sgvi20120sg+5 | |
J-STD-002Contextual Info: New Product V20120S, VF20120S, VB20120S & VI20120S Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A FEATURES TMBS • Trench MOS Schottky technology ITO-220AB TO-220AB • Low forward voltage drop, low power |
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v20120svf20120svb20120svi20120s+5 | |
vf20120sg
Abstract: J-STD-002
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Original |
v20120sgvf20120sgvb20120sgvi20120sg+5 | |
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Contextual Info: V20120SG, VI20120SG www.vishay.com Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A FEATURES TMBS TO-220AB • Trench MOS Schottky technology TO-262AA • Low forward voltage drop, low power losses |
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v20120sgvi20120sgo-220abo-262aa+3 | |
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Contextual Info: V20120S, VI20120S www.vishay.com Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A FEATURES TMBS TO-220AB • Trench MOS Schottky technology TO-262AA • Low forward voltage drop, low power losses |
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v20120svi20120so-220abo-262aa+3 | |
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Contextual Info: New Product V20120S, VF20120S, VB20120S & VI20120S Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A FEATURES TMBS • Trench MOS Schottky technology ITO-220AB TO-220AB • Low forward voltage drop, low power |
Original |
v20120svf20120svb20120svi20120s+5 | |
J-STD-002
Abstract: 1412D
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Original |
v20120svf20120svb20120svi20120s+7 | |
v20120sContextual Info: V20120S, VF20120S & VI20120S New Product Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.491 V at IF = 5 A FEATURES ITO-220AB TO-220AB • Trench MOS Schottky Technology • Low forward voltage drop, low power losses |
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v20120svf20120svi20120so-220ab+4 | |
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Contextual Info: V20120SG-E3, VF20120SG-E3, VB20120SG-E3, VI20120SG-E3 www.vishay.com Vishay General Semiconductor High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A FEATURES TMBS • Trench MOS Schottky technology TO-220AB ITO-220AB • Low forward voltage drop, low power losses |
Original |
v20120sg-e3vf20120sg-e3vb20120sg-e3vi20120sg-e3+6 | |
J-STD-002
Abstract: VF20120SG
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Original |
v20120sgvf20120sgvb20120sgvi20120sg+6 | |
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Contextual Info: New Product V20120S, VI20120S Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A FEATURES TMBS TO-220AB • Trench MOS Schottky technology TO-262AA • Low forward voltage drop, low power losses |
Original |
v20120svi20120so-220abo-262aa+4 | |
|
Contextual Info: New Product V20120S, VI20120S Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A FEATURES TMBS TO-220AB • Trench MOS Schottky technology TO-262AA • Low forward voltage drop, low power losses |
Original |
v20120svi20120so-220abo-262aa+4 | |
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Contextual Info: New Product V20120S, VF20120S, VB20120S & VI20120S Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A FEATURES TMBS • Trench MOS Schottky technology ITO-220AB TO-220AB • Low forward voltage drop, low power |
Original |
v20120svf20120svb20120svi20120s+4 | |
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Contextual Info: New Product V20120S, VI20120S Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A FEATURES TMBS TO-220AB • Trench MOS Schottky technology TO-262AA • Low forward voltage drop, low power losses |
Original |
v20120svi20120so-220abo-262aa+4 | |
VF20120SGContextual Info: New Product V20120SG, VF20120SG, VB20120SG & VI20120SG Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A FEATURES TMBS • Trench MOS Schottky technology ITO-220AB TO-220AB • Low forward voltage drop, low power |
Original |
v20120sgvf20120sgvb20120sgvi20120sg+4 | |
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Contextual Info: New Product V20120S, VI20120S Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A FEATURES TMBS TO-220AB • Trench MOS Schottky technology TO-262AA • Low forward voltage drop, low power losses |
Original |
v20120svi20120so-220abo-262aa+4 | |
vf20120sgContextual Info: V20120SG & VF20120SG New Product Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.540 V at IF = 5 A FEATURES ITO-220AB TO-220AB • Trench MOS Schottky Technology • Low forward voltage drop, low power losses |
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v20120sgvf20120sgo-220abito-220ab+2 | |
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Contextual Info: V20120S-E3, VF20120S-E3, VB20120S-E3, VI20120S-E3 www.vishay.com Vishay General Semiconductor High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A FEATURES TMBS TO-220AB • Trench MOS Schottky technology ITO-220AB • Low forward voltage drop, low power losses |
Original |
v20120s-e3vf20120s-e3vb20120s-e3vi20120s-e3+6 | |
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Contextual Info: New Product V20120SG, VI20120SG Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A FEATURES TMBS TO-220AB • Trench MOS Schottky technology TO-262AA • Low forward voltage drop, low power losses |
Original |
v20120sgvi20120sgo-220abo-262aa+4 | |
J-STD-002
Abstract: V20120
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Original |
v20120svf20120svb20120svi20120s+7 | |
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Contextual Info: New Product V20120SG, VI20120SG Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A FEATURES TMBS TO-220AB • Trench MOS Schottky technology TO-262AA • Low forward voltage drop, low power losses |
Original |
v20120sgvi20120sgo-220abo-262aa+4 | |
J-STD-002
Abstract: VF20120SG
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Original |
v20120sgvf20120sgvb20120sgvi20120sg+6 | |
V20120S
Abstract: J-STD-002B 1412D
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Original |
v20120svf20120svb20120svi20120s+6 | |