V20120 Search Results
V20120 Datasheets (9)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| V20120C-E3/4W | Vishay General Semiconductor | Diodes, Rectifiers - Arrays, Discrete Semiconductor Products, DIODE SCHOTTKY 120V 10A TO220AB | Original | 5 | |||
| V20120CHM3/4W | Vishay Semiconductor Diodes Division | Discrete Semiconductor Products - Diodes - Rectifiers - Arrays - DIODE SCHOTTKY 20A 120V TO-220AB | Original | 143.52KB | |||
| V20120C-M3/4W | Vishay Semiconductor Diodes Division | Discrete Semiconductor Products - Diodes - Rectifiers - Arrays - DIODE SCHOTTKY 20A 120V TO-220AB | Original | 143.52KB | |||
| V20120S-E3/4W | Vishay Semiconductors | Diodes, Rectifiers - Single, Discrete Semiconductor Products, DIODE SCHOTTKY 120V 20A TO220AB | Original | 5 | |||
| V20120SG-E3/4W | Vishay Semiconductors | Diodes, Rectifiers - Single, Discrete Semiconductor Products, DIODE SCHOTTKY 120V 20A TO220AB | Original | 5 | |||
| V20120SGHM3/4W | Vishay Semiconductor Diodes Division | Discrete Semiconductor Products - Diodes - Rectifiers - Single - DIODE SCHOTTKY 20A 120V TO-220AB | Original | 142.82KB | |||
| V20120SG-M3/4W | Vishay Semiconductor Diodes Division | Discrete Semiconductor Products - Diodes - Rectifiers - Single - DIODE SCHOTTKY 20A 120V TO-220AB | Original | 142.82KB | |||
| V20120SHM3/4W | Vishay Semiconductor Diodes Division | Discrete Semiconductor Products - Diodes - Rectifiers - Single - DIODE SCHOTTKY 20A 120V TO-220AB | Original | 142.74KB | |||
| V20120S-M3/4W | Vishay Semiconductor Diodes Division | Discrete Semiconductor Products - Diodes - Rectifiers - Single - DIODE SCHOTTKY 20A 120V TO-220AB | Original | 142.74KB |
V20120 Price and Stock
onsemi FSV20120VDIODE SCHOTTKY 120V 20A TO2773 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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FSV20120V | Digi-Reel | 11,151 | 1 |
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FSV20120V | Reel | 21 Weeks | 5,000 |
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FSV20120V | 15,363 |
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FSV20120V | Cut Tape | 1 |
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FSV20120V | 50,000 | 1 |
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FSV20120V | 1 |
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FSV20120V | 5,000 |
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FSV20120V | 25,000 | 21 Weeks | 5,000 |
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FSV20120V | 22 Weeks | 5,000 |
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FSV20120V | Cut Tape | 3,958 | 0 Weeks, 1 Days | 1 |
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FSV20120V | 23 Weeks | 5,000 |
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FSV20120V | 5,000 | 500 |
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FSV20120V | 5,000 |
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Eaton Bussmann MFBW1V2012-000-RFERRITE BEAD 0 OHM 0805 1LN |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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MFBW1V2012-000-R | Cut Tape | 7,272 | 1 |
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MFBW1V2012-000-R | Reel | 4,000 |
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MFBW1V2012-000-R | 4,000 |
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Eaton Bussmann MFBM1V2012-000-RFERRITE BEAD 0 OHM 0805 1LN |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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MFBM1V2012-000-R | Cut Tape | 4,005 | 1 |
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MFBM1V2012-000-R | Reel | 4,000 |
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MFBM1V2012-000-R | 4,000 |
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Eaton Bussmann MFBM1V2012-090-RFERRITE BEAD 9 OHM 0805 1LN |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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MFBM1V2012-090-R | Cut Tape | 3,094 | 1 |
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MFBM1V2012-090-R | Reel | 4,000 |
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MFBM1V2012-090-R | 4,000 |
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Vishay Semiconductors V20120C-E3-4WDIODE ARR SCHOT 120V 10A TO2203 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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V20120C-E3-4W | Tube | 2,977 | 1 |
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V20120 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
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Contextual Info: New Product V20120SG, VI20120SG Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A FEATURES TMBS TO-220AB • Trench MOS Schottky technology TO-262AA • Low forward voltage drop, low power losses |
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V20120SG, VI20120SG O-220AB O-262AA 22-B106 AEC-Q101 V20120SG 2002/95/EC 2002/96/EC | |
vf20120sg
Abstract: J-STD-002B
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V20120SG, VF20120SG, VB20120SG VI20120SG ITO-220AB O-220AB V20120SG J-STD-020C, O-263AB O-220AB, vf20120sg J-STD-002B | |
J-STD-002Contextual Info: New Product V20120S, VF20120S, VB20120S & VI20120S Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A FEATURES TMBS • Trench MOS Schottky technology ITO-220AB TO-220AB • Low forward voltage drop, low power |
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V20120S, VF20120S, VB20120S VI20120S ITO-220AB O-220AB V20120S J-STD-020, O-263AB O-220AB, J-STD-002 | |
vf20120sg
Abstract: J-STD-002
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Original |
V20120SG, VF20120SG, VB20120SG VI20120SG ITO-220AB O-220AB V20120SG J-STD-020, O-263AB VF20120SG vf20120sg J-STD-002 | |
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Contextual Info: V20120SG, VI20120SG www.vishay.com Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A FEATURES TMBS TO-220AB • Trench MOS Schottky technology TO-262AA • Low forward voltage drop, low power losses |
Original |
V20120SG, VI20120SG O-220AB O-262AA 22-B106 AEC-Q101 V20120SG 2002/95/EC. 2002/95/EC | |
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Contextual Info: V20120S, VI20120S www.vishay.com Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A FEATURES TMBS TO-220AB • Trench MOS Schottky technology TO-262AA • Low forward voltage drop, low power losses |
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V20120S, VI20120S O-220AB O-262AA 22-B106 AEC-Q101 V20120S 2002/95/EC. 2002/95/EC | |
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Contextual Info: New Product V20120C, VI20120C Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A FEATURES TMBS • Trench MOS Schottky technology TO-220AB • Low forward voltage drop, low power losses |
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V20120C, VI20120C O-220AB O-262AA 22-B106 AEC-Q101 2002/95/EC 2002/96/EC V20120C | |
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Contextual Info: New Product V20120S, VF20120S, VB20120S & VI20120S Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A FEATURES TMBS • Trench MOS Schottky technology ITO-220AB TO-220AB • Low forward voltage drop, low power |
Original |
V20120S, VF20120S, VB20120S VI20120S ITO-220AB O-220AB V20120S J-STD-020, O-263AB 22-B106 | |
J-STD-002
Abstract: 1412D
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Original |
V20120S, VF20120S, VB20120S VI20120S ITO-220AB O-220AB V20120S J-STD-020, O-263AB 22-B106 J-STD-002 1412D | |
V20120CContextual Info: New Product V20120C, VF20120C, VB20120C & VI20120C Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A FEATURES TMBS • Trench MOS Schottky technology ITO-220AB TO-220AB • Low forward voltage drop, low power losses |
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V20120C, VF20120C, VB20120C VI20120C O-220AB ITO-220AB J-STD-020C, O-263AB O-220AB, ITO-220AB V20120C | |
v20120sContextual Info: V20120S, VF20120S & VI20120S New Product Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.491 V at IF = 5 A FEATURES ITO-220AB TO-220AB • Trench MOS Schottky Technology • Low forward voltage drop, low power losses |
Original |
V20120S, VF20120S VI20120S O-220AB ITO-220AB V20120S 2002/95/EC 2002/96/EC O-262AA v20120s | |
V20120C
Abstract: J-STD-002
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V20120C O-220AB 22-B106 2002/95/EC 2002/96/EC O-220Alectual 18-Jul-08 V20120C J-STD-002 | |
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Contextual Info: V20120SG-E3, VF20120SG-E3, VB20120SG-E3, VI20120SG-E3 www.vishay.com Vishay General Semiconductor High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A FEATURES TMBS • Trench MOS Schottky technology TO-220AB ITO-220AB • Low forward voltage drop, low power losses |
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V20120SG-E3, VF20120SG-E3, VB20120SG-E3, VI20120SG-E3 O-220AB ITO-220AB J-STD-020, O-263AB V20120SG 22-B106 | |
J-STD-002
Abstract: VF20120SG
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Original |
V20120SG, VF20120SG, VB20120SG VI20120SG ITO-220AB O-220AB J-STD-020, O-263AB V20120SG 22-B106 J-STD-002 VF20120SG | |
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Contextual Info: New Product V20120S, VI20120S Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A FEATURES TMBS TO-220AB • Trench MOS Schottky technology TO-262AA • Low forward voltage drop, low power losses |
Original |
V20120S, VI20120S O-220AB O-262AA 22-B106 AEC-Q101 V20120S 2002/95/EC 2002/96/EC | |
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Contextual Info: New Product V20120S, VF20120S, VB20120S & VI20120S Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A FEATURES TMBS • Trench MOS Schottky technology ITO-220AB TO-220AB • Low forward voltage drop, low power |
Original |
V20120S, VF20120S, VB20120S VI20120S O-220AB ITO-220AB V20120S VF20120S J-STD-020, O-263AB | |
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Contextual Info: New Product V20120C, VI20120C Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A FEATURES TMBS • Trench MOS Schottky technology TO-220AB • Low forward voltage drop, low power losses |
Original |
V20120C, VI20120C O-220AB O-262AA 22-B106 AEC-Q101 2002/95/EC 2002/96/EC V20120C | |
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Contextual Info: New Product V20120SG, VI20120SG Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A FEATURES TMBS TO-220AB • Trench MOS Schottky technology TO-262AA • Low forward voltage drop, low power losses |
Original |
V20120SG, VI20120SG O-220AB O-262AA 22-B106 AEC-Q101 V20120SG 2002/95/EC 2002/96/EC | |
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Contextual Info: New Product V20120S, VI20120S Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A FEATURES TMBS TO-220AB • Trench MOS Schottky technology TO-262AA • Low forward voltage drop, low power losses |
Original |
V20120S, VI20120S O-220AB O-262AA 22-B106 AEC-Q101 V20120S 2002/95/EC 2002/96/EC | |
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Contextual Info: V20120C, VI20120C www.vishay.com Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A FEATURES TMBS • Trench MOS Schottky technology TO-220AB • Low forward voltage drop, low power losses |
Original |
V20120C, VI20120C O-220AB O-262AA 22-B106 AEC-Q101 V20120C 2002/95/EC. 2002/95/EC | |
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Contextual Info: V20120C-E3, VF20120C-E3, VB20120C-E3, VI20120C-E3 www.vishay.com Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A FEATURES TMBS TO-220AB • Trench MOS Schottky technology ITO-220AB • Low forward voltage drop, low power losses |
Original |
V20120C-E3, VF20120C-E3, VB20120C-E3, VI20120C-E3 O-220AB ITO-220AB J-STD-020, O-263AB V20120C VF20120C | |
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Contextual Info: New Product V20120C, VF20120C, VB20120C & VI20120C Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A FEATURES TMBS • Trench MOS Schottky technology ITO-220AB TO-220AB • Low forward voltage drop, low power |
Original |
V20120C, VF20120C, VB20120C VI20120C O-220AB ITO-220AB V20120C VF20120C J-STD-020, O-263AB | |
VF20120SGContextual Info: New Product V20120SG, VF20120SG, VB20120SG & VI20120SG Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A FEATURES TMBS • Trench MOS Schottky technology ITO-220AB TO-220AB • Low forward voltage drop, low power |
Original |
V20120SG, VF20120SG, VB20120SG VI20120SG O-220AB ITO-220AB V20120SG VF20120SG J-STD-020, O-263AB VF20120SG | |
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Contextual Info: New Product V20120S, VI20120S Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A FEATURES TMBS TO-220AB • Trench MOS Schottky technology TO-262AA • Low forward voltage drop, low power losses |
Original |
V20120S, VI20120S O-220AB O-262AA 22-B106 AEC-Q101 V20120S 2002/95/EC 2002/96/EC | |