V61C68 Search Results

V61C68

Abstract: C-4555 4k*4bit
Contextual Info: V ITE LIC V61C68 FAMILY HIG H PERFORMANCE LOW POWER 4K x4B IT CMOS STATIC RAM Features Description • Fast Access Time • Maximum access time of 25/35/45/55/70 ns • Equal access and cycle times The V61C68 is a high speed, low power, 4096word by 4-bit CMOS static RAM fabricated using

SD231

Contextual Info: VITELIC CORP 13E D | TSQ531Q °DD0471 Û | T - L\ k V VITELIC - Z 3 - P S V61C68 FAMILY HIGH PERFORMANCE LOW POWER 4K x 4 BIT CMOS STATIC RAM Features Description • The V61C68 is a high speed, low power, 4096word by 4-bit CMOS static RAM fabricated using

Contextual Info: VITELIC V61C68 FAMILY HIGH PERFORMANCE LOW POWER 4K x 4 BIT CMOS STATIC RAM Features Description • Fast Access Time • Maximum access time of 25/35/45/55/70 ns • Equal access and cycle times The V61C68 is a high speed, low power, 4096word by 4-bit CMOS static RAM fabricated using

IMS1630

Abstract: HY62256 SGS-Thomson HITACHI HM6116 DALLAS SEMICONDUCTOR Ds1235 MK4503 hm6116 cross UPD4361 SSM7188 MK4501
Contextual Info: CROSS REFERENCE AMD SGS-THOMSON Group DALLAS Semiconductor SGS-THOMSON Group AM2147 IMS1203 DS2009 MK4501/H01 AM2148/9 IMS1223 DS2010 MK45H02 AM2167 IMS1403 DS2011 MK4503/H03 AM2168 IMS1423 or MK41 H68 DS2012 MK45H04 AM9126 MK6116 DS1210 MK48Z02 AM99C68 IMS1423 or MK41 H68

VT20C68-20

Abstract: 4c45 UPD4314C-45 VT20C69-25 V61C68P-35 V61C68P-35L V61C68P-45 V61C68P-45L V61C68P-55L VT20C68-35
Contextual Info: 43 16 K X A ••/ CMOS 1h ¡WdyKiKI æ £ tt £ VC TAAC max ns) TCAC max (ns) TOR max (ns) TOH min (ns) TOD max (ns) > y TWP »in (ns) S t a t i c ft RAM TDS min (ns) (40 96 x4 ) m il TDH (ns) TWD •in (ns) TWR max (ns) V D D or V C C (V) 2 0 P I N 6 1 6 8

MCM6269P35

Abstract: MK41H68-20 MK41H68-25 MK41H68-35 MK41H69-20 MK41H69-35 P4C168-15 P4C168-20 P4C168-25
Contextual Info: 42 16 K tt & £ iâlïiaa X TAAC max (ns) TCAC «ax (ns) CMOS S t a t i c RAM ( 4 0 9 6 x 4 ) 4 -j * > Ÿ ft ft X TOE nax (ns) TOH •in (ns) TOD max (ns) TWI> min (ns) TDS min (ns) M TDH min (ns) TiD min (ns) TWR max (as) V D D or V C C (V) 2 0 P I N 6 16 8