UPC2756T Search Results

11l02

Abstract: 1SV186 UPC2756T UPC2756T-E3
Contextual Info: 3 V SILICON MMIC L-BAND FREQUENCY DOWN CONVERTER FEATURES UpC2756T INTERNAL BLOCK DIAGRAM • WIDE BAND OPERATION: RF = 0.1 to 2.0 GHz • ON BOARD OSCILLATOR • LOW CURRENT CONSUMPTION: 6 mA • SUPER SMALL T06 PACKAGE • TAPE AND REEL PACKAGING OPTION AVAILABLE

Contextual Info: "" 3 V SILICON MMIC L-BAND FREQUENCY DOWN CONVERTER UPC2756T INTERNAL BLOCK DIAGRAM FEATURES • WIDE BAND OPERATION: RF - 0.1 to 2.0 GHz • ON BOARD OSCILLATOR • LOW CURRENT CONSUMPTION: 6 mA • SUPER SMALL T06 PACKAGE • TAPE AND REEL PACKAGING OPTION AVAILABLE

TOP 242 PN pin

Abstract: 1SV186 toshiba
Contextual Info: 3 V SUPER MINIMOLD L-BAND UPC2756TB SI MMIC DOWNCONVERTER FEATURES INTERNAL BLOCK DIAGRAM • HIGH DENSITY SURFACE MOUNTING: 6 Pin Super Minimold or SOT-363 package • WIDE BAND OPERATION: RF = 0.1 to 2.0 GHz IF = 10 to 300 MHz IF Output RF Input • ON BOARD OSCILLATOR

UPC2798GR

Contextual Info: Configuration Drawings Frequency Downconverters UPC1686GV/ 2721GV/2722GV UPC2756T ose ose ose Vcc Coupling (Feedback) (Bypass) (F o u t2 GND R F in -2 UPC2757T/58T UPC8112T R F in - i (Bypass) UPC2768GR UPC2782GR UPC2798GR Configuration Drawings IQ Modulators

t06 94

Contextual Info: 3 V SILICON MMIC L-BAND FREQUENCY DOWN CONVERTER FEATURES UPC2756T INTERNAL BLOCK DIAGRAM • WIDE BAND OPERATION: RF = 0.1 to 2.0 GHz • ON BOARD OSCILLATOR • LOW CURRENT CONSUMPTION: 6 mA « SUPER SMALL T06 PACKAGE • TAPE AND REEL PACKAGING OPTION AVAILABLE

nec j44

Abstract: SMV1204-4 SMV1204 1SV186 UPC2756T UPC2756T-E3 Toshiba 1SV186 varactor J607
Contextual Info: 3 V SILICON MMIC L-BAND FREQUENCY DOWN CONVERTER FEATURES UPC2756T INTERNAL BLOCK DIAGRAM • WIDE BAND OPERATION: RF = 0.1 to 2.0 GHz • ON BOARD OSCILLATOR • LOW CURRENT CONSUMPTION: 6 mA IF Output • SUPER SMALL T06 PACKAGE • TAPE AND REEL PACKAGING OPTION AVAILABLE

Contextual Info: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT uPC2756TB MIXER+OSCILLATOR SILICON MMIC FOR FREQUENCY DOWNCONVERTER OF L BAND WIRELESS RECEIVER DESCRIPTION The ^¡PC2756TB is a silicon monolithic integrated circuit designed as L band frequency downconverter for receiver

Contextual Info: i'UüM i'll!, O l i l i O L/ttiolUllL, llUiolULo 410 U lO U U U L ^ U U . ÜU '<10 lU .v M / u i, I U . 00/ n ^ . U O YU L ^ O PRELIMINARY DATA SHEET NEC BIPOLAR ANALOG INTEGRATED CIRCUIT uPC2756T 3 V-BIAS, L-BAND SILICON DOWNCONVERTER 1C FOR GPS RECEIVER AND WIRESLESS COMMNUNICATIONS

uPC2756

Abstract: 1SV186 UPC2745TB UPC2756T UPC2756TB UPC2756TB-E3-A SI MMIC DOWNCONVERTER
Contextual Info: 3 V SUPER MINIMOLD L-BAND UPC2756TB SI MMIC DOWNCONVERTER FEATURES INTERNAL BLOCK DIAGRAM • HIGH DENSITY SURFACE MOUNTING: 6 Pin Super Minimold or SOT-363 package • WIDE BAND OPERATION: RF = 0.1 to 2.0 GHz IF = 10 to 300 MHz IF Output RF Input • ON BOARD OSCILLATOR

1SV186

Abstract: UPC2756T UPC2756T-E3 J442
Contextual Info: 3 V SILICON MMIC L-BAND FREQUENCY DOWN CONVERTER FEATURES UPC2756T INTERNAL BLOCK DIAGRAM • WIDE BAND OPERATION: RF = 0.1 to 2.0 GHz • ON BOARD OSCILLATOR • LOW CURRENT CONSUMPTION: 6 mA IF Output • SUPER SMALL T06 PACKAGE • TAPE AND REEL PACKAGING OPTION AVAILABLE

mobile phone basic block diagram

Abstract: PG2158T5K 2SC3357/NE85634 microwave Duplexer NE5510279A UPC8236 NE3517S03 UPG2156 NE662M04 SW SPDT
Contextual Info: RF AND MICROWAVE DEVICES SELECTION GUIDE − APPLICATION SYSTEM − October 2009 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .

Contextual Info: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT fi PC2756T 3 V-BIAS, L-BAND SILICON DOWNCONVERTER 1C FOR GPS RECEIVER AND W IRESLESS COMMNUNICATIONS DESCRIPTION ¿¿PC2756T is a silicon monolithic integrated circuit designed as L-band downconverter. This L-band downconverter 1C is

FET marking code g5d

Abstract: PG2179TB marking code C3E SOT-89 marking code C1E mmic marking code C1G mmic 2SC3357/NE85634 PG2163T5N sot-23 g6g PC8230TU marking code C1H mmic
Contextual Info: RF AND MICROWAVE DEVICES PRODUCT LINEUP www.renesas.com 2010.07 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .

nec mosfet marked v75

Abstract: NEC Ga FET marking code T79 FET marking code g5d marking code C1G mmic LGA 1155 PIN diagram PB1507 marking code C1E mmic marking code C1H mmic PC8230TU MMIC SOT 363 marking CODE 77
Contextual Info: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455

transistor t06

Abstract: T06 transistor transistor t06 19 2SC 930 AF t06 93 UPC1678B LT 5219 UPC8103T UPC8108T
Contextual Info: Silicon MMIC Selection Guide WIDEBAND AMPLIFIERS Part Number Typ. Fr*q. Range O 3 dB down MHz ELECTRICAL CHARACTERISTICS1 <f*500 MHz, «XC«frt a t noted T a * 25°C.) NF (dB) Icc Vcc (V) (mA) MIN TYP MAX TYP RLin RLout PSAT (dB) (dBm) (dB) ISOL (dB) MAX

FSQ510 Equivalent

Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
Contextual Info: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178

MPC2758T

Contextual Info: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUITS UPC2757T, UPC2758T 3V-BIAS L-BAND SILICON DOWNCONVERTER ICs FOR MOBILE COMMUNICATIONS DESCRIPTION /¿PC2757T and /¿PC2758T are silicon m onolithic integrated circuits designed as 1st down converters for L band

SMD M05 sot23

Abstract: NE5531 nE352 A3 smd sot-343 transistor smd m05 SMD transistor M05 transistor smd code 404
Contextual Info: 2013-2014 RF & Wireless Semiconductors P R O D U C T S b y A P P L I C AT I O N California Eastern Laboratories CEL is the exclusive sales and marketing partner in the Americas for products made by the Compound Semiconductor Devices Business Division (CSDBD) of Renesas Electronics Corporation, formerly

ne3511s02 s2p

Abstract: ne3512s02 s2p SMD M05 sot SMD transistor M05 S06 SMD UPG2162T5N ne3210s01 NE321000 QFN2020 UPG2250T5N
Contextual Info: 2007 California Eastern Laboratories HEADQUARTERS U.S. REPS INTERNATIONAL REPS CEL 4590 Patrick Henry Drive Santa Clara CA 95054 Tel: 408 919-2500 Fax: (408) 988-0279 www.cel.com Northwest Disman Bakner (800) 347-3010 Canada BC, Alberta, Saskatchewan

nec b1007

Abstract: T79 code marking C3206 marking s16 marking code C1H qfn marking t88 C3H marking NE02107 T79 marking C3206G
Contextual Info: California Eastern Laboratories Package Dimensions PART NUMBER DESCRIPTION NE68018 NEC part numbers are specified by die and package number. NE680 Die "18" Package PACKAGE MARKINGS NEC devices are marked with various indications which indicate part type, lot code year and month . Due to size constraints,

marking code C1E SMD Transistor

Abstract: TRANSISTOR SMD MARKING CODE s01 FMCW Radar transistor smd c1y NE92039 g2b 6-pin smd NE582M03 NE3210SO1 smd transistor g1-L smd code marking NEC 817
Contextual Info: RF & Microwave Device Overview 2003 NEC Electronics Europe GmbH Oberrather Str. 4 40472 Düsseldorf, Germany Tel. (02 11) 65 03 01 Fax (02 11) 65 03-3 27 - Podbielskistr. 164 30177 Hannover, Germany Tel. (05 11) 3 34 02-0 Fax (05 11) 3 34 02-34 - Arabellastr. 17

Contextual Info: 3 V SILICON MMIC L-BAND FREQUENCY DOWN CONVERTER FEATURES_ • WIDE BAND OPERATION: RF = 0.1 to 2.0 GHz • ON BOARD OSCILLATOR • LOW CURRENT CONSUMPTION: 6 mA • SUPER SM ALL T06 PACKAGE • TAPE AND REEL PACKAGING OPTION AVAILABLE

ic isl 887

Abstract: 2SC5508 NE3514 SW SPDT NE3515S02 NE5510279A NESG2031M05 PG2179 NE3509M04 NE3517S03
Contextual Info: RF & マイクロ波デバイス システムブロック www.renesas.com 2010.04 目 次 1. はじめに •··········································································································································· 3