UN1113
Abstract: XP4113
Contextual Info: Composite Transistors XP4113 Silicon PNP epitaxial planer transistor Unit: mm For switching/digital circuits 1 6 2 5 3 4 UN1113 x 2 elements • Absolute Maximum Ratings Ta=25˚C Parameter Symbol Ratings Unit Collector to base voltage Rating Collector to emitter voltage
|
Original
|
xp4113un1113 |
PDF
|
UN1113
Abstract: UNR1113 XN01113 XN1113
Contextual Info: Composite Transistors XN01113 XN1113 Silicon PNP epitaxial planer transistor Unit: mm For switching/digital circuits +0.2 2.8 -0.3 +0.25 0.65±0.15 1.45±0.1 3 0.65±0.15 1 2 0 to 0.1 UNR1113(UN1113) x 2 elements +0.1 +0.2 1.1 -0.1 ● 0.8 • Basic Part Number of Element
|
Original
|
xn01113xn1113unr1113un1113 |
PDF
|
UN1113
Abstract: UNR1113 XP04113 XP4113
Contextual Info: Composite Transistors XP04113 XP4113 Silicon PNP epitaxial planer transistor Unit: mm For switching/digital circuits 1 6 2 5 3 4 UNR1113(UN1113) x 2 elements • Absolute Maximum Ratings (Ta=25˚C) Parameter Symbol Ratings Unit Collector to base voltage
|
Original
|
xp04113xp4113unr1113un1113 |
PDF
|
XP01113
Abstract: XP1113 UN1113 UNR1113
Contextual Info: Composite Transistors XP01113 XP1113 Silicon PNP epitaxial planer transistor Unit: mm 0.2±0.05 For switching/digital circuits 2.1±0.1 1 2 1.25±0.1 0.425 5 3 4 +0.05 0.9± 0.1 UNR1113(UN1113) x 2 elements 0 to 0.1 ● 0.7±0.1 • Basic Part Number of Element
|
Original
|
xp01113xp1113unr1113un1113 |
PDF
|
UN1113
Abstract: UNR1113 XP06113 XP6113
Contextual Info: Composite Transistors XP06113 XP6113 Silicon PNP epitaxial planer transistor Unit: mm For switching/digital circuits 1 6 2 5 3 4 +0.05 UNR1113(UN1113) x 2 elements • Absolute Maximum Ratings 0 to 0.1 ● 0.12 –0.02 ■ Basic Part Number of Element 0.7±0.1
|
Original
|
xp06113xp6113unr1113un1113 |
PDF
|
XN4313
Contextual Info: Composite Transistors XN04313 XN4313 Silicon NPN epitaxial planar transistor (Tr1) Silicon PNP epitaxial planar transistor (Tr2) Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 6 3 2 0.50+0.10 –0.05 • UNR1213 (UN1213) + UNR1113 (UN1113) Tr1 1.1+0.2
|
Original
|
xn04313xn4313unr1213un1213+3unr1113un1113sc-74
|
PDF
|
UN1113
Abstract: XP1113
Contextual Info: Composite Transistors XP1113 Silicon PNP epitaxial planer transistor Unit: mm 0.2±0.05 For switching/digital circuits 2.1±0.1 1 2 1.25±0.1 0.425 5 3 4 +0.05 0.9± 0.1 UN1113 x 2 elements 0 to 0.1 ● 0.7±0.1 • Basic Part Number of Element 0.12 – 0.02
|
Original
|
xp1113un1113 |
PDF
|
UN1113
Abstract: XP6113
Contextual Info: Composite Transistors XP6113 Silicon PNP epitaxial planer transistor Unit: mm For switching/digital circuits 1 6 2 5 3 4 +0.05 UN1113 x 2 elements 0 to 0.1 ● 0.12 –0.02 • Basic Part Number of Element 0.7±0.1 0.9±0.1 0.2 ● Two elements incorporated into one package.
|
Original
|
xp6113un1113 |
PDF
|
UN1113
Abstract: XN1113
Contextual Info: Composite Transistors XN1113 Silicon PNP epitaxial planer transistor Unit: mm For switching/digital circuits +0.2 2.8 -0.3 +0.25 0.65±0.15 1.45±0.1 3 0.65±0.15 1 2 0 to 0.1 UN1113 x 2 elements +0.1 +0.2 1.1 -0.1 ● 0.8 • Basic Part Number of Element
|
Original
|
xn1113un1113 |
PDF
|
|
Contextual Info: Transistors with built-in Resistor UNR111x Series UN111x Series Silicon PNP epitaxial planar transistor Unit: mm 2.5±0.1 (1.0) R 0.9 M Di ain sc te on na tin nc ue e/ d • Costs can be reduced through downsizing of the equipment and reduction of the number of parts
|
Original
|
unr111xun111xunr1110unr1111+1unr1112
|
PDF
|
|
Contextual Info: Composite Transistors XP04313 XP04313 Silicon NPN epitaxial planar transistor (Tr1) Silicon PNP epitaxial planar transistor (Tr2) 0.2±0.05 5 0.12+0.05 –0.02 4 1.25±0.10 2.1±0.1 • Features 5˚ • Two elements incorporated into one package • Reduction of the mounting area and assembly cost by one half
|
Original
|
xp04313unr1213un1213unr1113+1un1113
|
PDF
|
UN1113
Abstract: XN4113
Contextual Info: Composite Transistors XN4113 Silicon PNP epitaxial planer transistor Unit: mm For switching/digital circuits +0.2 2.8 –0.3 +0.25 +0.1 +0.1 0 to 0.05 0.4±0.2 Ta=25˚C Parameter Symbol Ratings Unit Collector to base voltage Rating Collector to emitter voltage
|
Original
|
xn4113un1113 |
PDF
|
UN1114
Abstract: 1117 S Transistor UN1110 UN1111 UN1112 UN1113 UN1115 UN1116 UN1117 UN1118
Contextual Info: Transistors with built-in Resistor / 111D/111E/111F/111H/111L Silicon PNP epitaxial planer transistor Unit: mm For digital circuits 6.9±0.1 2.5±0.1 1.5 1.0 0.4 ● ● ● ● ● ● ● ● ● ● ●
|
Original
|
111d/111e/111f/111h/111lun1111un1112un1113+8un1114un1115un1116un1117un1118un11191117 s transistorun1110
|
PDF
|
schematic diagram atx Power supply 500w
Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455
|
Original
|
p462-ndp463-ndlng295lfcp2ulng395mftp5u+11us2011schematic diagram atx power supply 500wpioneer pal 012a1000w inverter pure sine wave schematic diagram600va numeric ups circuit diagramswinbond bios 25064tle 9180 infineonsmsc mec 1300 nutbe schematic diagram inverter 2000wdk55circuit diagram of luminous 600va ups
|
PDF
|
|
|
3866S
Abstract: transistor a999 bs 7818 -1995 transistor tt 2206 A999 transistor TT 2206 transistor a1535A 8340UAS transistor 3866S 2SD 4515
Contextual Info: H Integrated Circuits MOS LSIs Page MOS LSI Type No. Page Type No. Page Type No. Page Type No. Page M N 171608 42 A M N 18P73210 43 M N 3210 69 M N 5179/H 91 M N 171609 42 AM N 18P73215 43 M N 3214 69 MN5181 91 M N 3102 69 M N 53 00 0 Series 55 M N 33 00 Series
|
OCR Scan
|
1020gn12861n12b62mn1381+16mn13811mn1382115p080215p540258851a70803a3866stransistor a999bs 7818 -1995transistor tt 2206a999 transistortt 2206 transistora1535a8340uastransistor 3866s2sd 4515
|
PDF
|
SSP35n03
Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
Contextual Info: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A
|
Original
|
5ke100a5ke100ca5ke10a5ke10ca+165ke110a5ke110ca5ke11a5ke11ca5ke120a5ke120cassp35n03bc417ksh200 equivalent2n5457 equivalentss8050 equivalent1n34 equivalentfqp50n06 equivalentbd139 equivalent2n5458 equivalent2n3563 equivalent
|
PDF
|
XN4313
Abstract: UN1113 UN1213 UNR1113 UNR1213 XN04313
Contextual Info: Composite Transistors XN04313 XN4313 Silicon NPN epitaxial planar transistor (Tr1) Silicon PNP epitaxial planar transistor (Tr2) Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) M Di ain sc te on na tin nc ue e/ d For switching/digital circuit 5 6 3 2 • Basic Part Number of Element
|
Original
|
xn04313xn4313unr1213un1213+3unr1113un1113sc-74
|
PDF
|
UNR1110
Abstract: UNR1111 UNR1112 UNR1113 UNR1114 UNR1115 UNR1116 UNR1117 UNR1118 UNR1119
Contextual Info: Transistors with built-in Resistor UNR111x Series UN111x Series Silicon PNP epitaxial planar transistor Unit: mm For digital circuits 2.5±0.1 (1.0) R 0.9 R 0.7 0.55±0.1 (R1) 47 kΩ 10 kΩ 22 kΩ 47 kΩ 10 kΩ 10 kΩ 4.7 kΩ 22 kΩ 0.51 kΩ 1 kΩ
|
Original
|
unr111xun111xun1110un1111+16un1112un1113un1114un1115un1116un1117unr1110unr1111unr1112unr1113unr1114unr1115unr1116unr1117unr1118unr1119
|
PDF
|
UN1113
Abstract: UNR1113 XN04113 XN4113
Contextual Info: Composite Transistors XN04113 XN4113 Silicon PNP epitaxial planer transistor Unit: mm For switching/digital circuits +0.2 2.8 –0.3 +0.25 • Absolute Maximum Ratings +0.1 +0.1 0 to 0.05 0.4±0.2 (Ta=25˚C) Symbol Ratings Unit Collector to base voltage
|
Original
|
xn04113xn4113un1113unr1113 |
PDF
|
|
Contextual Info: Composite Transistors XN04313 XN4313 Silicon NPN epitaxial planar transistor (Tr1) Silicon PNP epitaxial planar transistor (Tr2) Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) • Features 5 6 3 2 0.30+0.10 –0.05 ■ Basic Part Number of Element 0.50+0.10
|
Original
|
xn04313xn4313unr1213un1213+2unr1113un1113
|
PDF
|
UN1219
Abstract: 12Z2 UN1110 UN1111 UN1113 UN1115 UN921E UN921F UN921K UN921L
Contextual Info: - 340 - T a = 2 5 t ,*EP[äTc=25T; m s ft £ VcBO VcEO lc(DC) (V) (V) (A) Pc Pei CW) m 5 ICBO (max) ( UA) S (min) W ^ (max) tt Vc e (V) (Ta=25°C) Ic / I e (A) [*£P(ätypffi] (max) (V) (V) le (A) Ib (A) UN921E föT Digital 50 50 0. 1 0.125 0 .1 50 60 10
|
OCR Scan
|
un921eun921fun921kun921l+10un1110un1111un121310k/47kuni114un1214un121912z2un1113un1115
|
PDF
|
UN1113
Abstract: UNR1113 XP04113 XP4113
Contextual Info: Composite Transistors XP04113 XP4113 Silicon PNP epitaxial planer transistor 0.2±0.05 5 6 ● 0.12+0.05 –0.02 4 5° Two elements incorporated into one package. (Transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half.
|
Original
|
xp04113xp4113unr1113un1113 |
PDF
|
AN3962FB
Abstract: MN1880023 mn19412 MN1874033 IC AN7135 an3814k MN1883214 an8294nsb mn4117405 mn171202
Contextual Info: umb Type No. Page MOS L Type No. Page Type No. Page Type No. MN151614 43 MN1882417 45 ▲ MN151630 43 MN1882421 46 MN3204 • MN3200 Series Page Type No. Page MN56000 Series 58 63 MN56020 58 68 • O M N 101C 01A 46 MN152810 43 MN188321 45 MN3205 68 MN56030
|
OCR Scan
|
mn101c01cmn101c01dmn101c025mn1020003+16mn1020004amn1020004afbmn1020012amn102012afamn1020015an3962fbmn1880023mn19412mn1874033ic an7135an3814kmn1883214an8294nsbmn4117405mn171202
|
PDF
|
UN1113
Abstract: UNR1113 XP06113 XP6113
Contextual Info: Composite Transistors XP06113 XP6113 Silicon PNP epitaxial planer transistor 0.2±0.05 5 6 ● 4 Features 0.2±0.1 Two elements incorporated into one package. (Transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half.
|
Original
|
xp06113xp6113unr1113un1113 |
PDF
|