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    UMIL10 Search Results

    UMIL10 Datasheets (14)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    UMIL10
    Ghz Technology 100 W, 28 V, 100-400 MHz common emitter transistor Original PDF 178.4KB 3
    UMIL10
    Microsemi Bipolar/LDMOS Transistor Original PDF 78.01KB 2
    UMIL10
    Acrian 10 W, 28 V, 400 MHz, UHF power transistor Scan PDF 198.44KB 3
    UMIL10
    Unknown Semiconductor Master Cross Reference Guide Scan PDF 124.91KB 1
    UMIL100
    Ghz Technology 100 Watts, 28 Volts, Class AB Defcom 225 - 400 MHz Original PDF 168.65KB 3
    UMIL100
    Acrian 100 W, 28 V, 225-400 MHz, UHF transistor Scan PDF 179.99KB 3
    UMIL100
    Unknown Semiconductor Master Cross Reference Guide Scan PDF 124.91KB 1
    UMIL100-2
    Acrian 100 W, 28 V, 225-400 MHz, UHF transistor Scan PDF 179.99KB 3
    UMIL100A
    Ghz Technology RF Transistors (BJT), Discrete Semiconductor Products, TRANS RF BIPO 270W 20A 55JU2 Original PDF 2
    UMIL100A
    Ghz Technology 100 Watts, 28 Volts, Class AB Defcom 225 - 400 MHz Original PDF 135.14KB 2
    UMIL100A
    Microsemi Discrete Semiconductor Products - Transistors - Bipolar (BJT) - RF - TRANS RF BIPO 270W 20A 55JU2 Original PDF 136.5KB
    UMIL100A
    Unknown Semiconductor Master Cross Reference Guide Scan PDF 124.91KB 1
    UMIL10-2
    Acrian 10 W, 28 V, 400 MHz, UHF power transistor Scan PDF 198.44KB 3
    UMIL10P
    Ghz Technology 10 Watts, 28 Volts, Class AB UHF Communications 100 - 400 MHz Original PDF 76.19KB 3
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    UMIL10 Price and Stock

    Microchip Technology Inc

    Microchip Technology Inc UMIL10

    Transistor RF BJT NPN 55V 15A 3Pin Case 55FT2 (Alt: UMIL10)
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    UMIL10 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    55FT

    Abstract: 100-400MHz UMIL10
    Contextual Info: UMIL 10 100 Watts, 28 Volts, Class AB or C Defcom 100 - 400 MHz CASE OUTLINE GENERAL DESCRIPTION 55FT, Style 2 The UMIL10 is a COMMON EMITTER broadband transistor specifically intended for use in the 100-400 MHz frequency band. It may be operated in Class AB or C. Gold metallization and silicon diffused resistors ensure


    Original
    umil10150oc200oc55ft+1100-400mhz PDF

    UMIL100ASQ

    Contextual Info: UMIL100ASQ NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI UMIL100ASQ is Designed for Class AB Amplifier Applications in 225 to 400 MHz Military Radios. PACKAGE STYLE 400- 6LFLG FEATURES INCLUDE: • Internal Input Matching • Gold Metalization • Emitter Ballasting


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    umil100asq PDF

    transistor UMIL100A

    Abstract: UMIL100A
    Contextual Info: UMIL 100A 100 Watts, 28 Volts, Class AB Defcom 225 - 400 MHz GENERAL DESCRIPTION CASE OUTLINE The UMIL100A is a double input matched COMMON EMITTER broadband transistor specifically intended for use in the 225-400 MHz frequency band. It may be operated in Class AB or C. Gold metallization and silicon diffused


    Original
    umil100atransistor umil100a PDF

    UMIL10

    Contextual Info: UMIL 10 100 Watts, 28 Volts, Class AB Defcom 100 - 400 MHz GENERAL DESCRIPTION CASE OUTLINE The UMIL10 is a COMMON EMITTER broadband transistor specifically intended for use in the 100-400 MHz frequency band. It may be operated in Class AB or C. Gold metallization and silicon diffused resistors ensure


    Original
    umil10 PDF

    IN225

    Contextual Info: UMIL100SQ NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI UMIL100SQ is Designed for Class C Amplifier Applications in 225 to 400 MHz Military Radios. PACKAGE STYLE 400- 6LFLG FEATURES INCLUDE: • Internal Input Matching • Gold Metalization • Emitter Ballasting


    Original
    umil100sqin225 PDF

    UMIL10P

    Contextual Info: R.3.070799 UMIL10P 10 Watts, 28 Volts, Class AB UHF Communications 100 – 400 MHz CASE OUTLINE 55FU Style 2 GENERAL DESCRIPTION The UMIL10P is a COMMON EMITTER broadband transistor specifically intended for use in the 100-400 MHz frequency band. It may be operated in


    Original
    umil10p200ma PDF

    C2M100-28

    Abstract: C2M-100-28 25CC UMIL100 UMIL60 Scans-00115694
    Contextual Info: 0182998 ACRI AN INC jjfTJoifl 2 ^ 0 aG01212 ñ ^~D T-33-15 AN UMIL100 GENERAL DESCRIPTION 100 WATTS - 28 VOLTS 225-400 MHz The UMIL100 is a double input matched broadband transistor specifically intended for use in the 225-400MHz frequency band. It may be operated in Class A, AB, or C.


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    0g01212t-33-15umili00225-400mhz+6umil100c2m100-28c2m-100-2825ccumil60scans-00115694 PDF

    UMIL80

    Abstract: UMIL10 j105 transistor acrian inc
    Contextual Info: UMILIO GENERAL DESCRIPTION The UMIL10 is a general purpose UHF power common emitter transistor designed for use through 400 MHz. It features gold metallization for high reliability and diffused ballasting for superior ruggedness. It can be operated full Class A at


    OCR Scan
    umil10umil80j105 transistoracrian inc PDF

    UMIL100A

    Contextual Info: UMIL100A NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI UMIL100A is Designed for Class AB Amplifier Applications in 225 to 400 MHz Military Radios. PACKAGE STYLE 500- 6LFLG FEATURES INCLUDE: • Internal Input Matching • Gold Metalization • Emitter Ballasting


    Original
    umil100a PDF

    UMIL10P

    Contextual Info: R.3.070799 UMIL10P 10 Watts, 28 Volts, Class AB UHF Communications 100 – 400 MHz ADVANCED RELEASE GENERAL DESCRIPTION CASE OUTLINE 55FU Style 2 The UMIL10P is a COMMON EMITTER broadband transistor specifically intended for use in the 100-400 MHz frequency band. It may be operated in


    Original
    umil10p PDF

    UMIL100

    Contextual Info: UMIL 100 100 Watts, 28 Volts, Class AB Defcom 225 - 400 MHz GENERAL DESCRIPTION CASE OUTLINE The UMIL100 is a double input matched COMMON EMITTER broadband transistor specifically intended for use in the 225-400 MHz frequency band. It may be operated in Class AB or C. Gold metallization and silicon diffused


    Original
    umil100150oc PDF

    UMIL100

    Contextual Info: UMIL100 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI UMIL100 is Designed for Class C Amplifier Applications in 225 to 400 MHz Military Radios. PACKAGE STYLE 500- 6LFLG FEATURES INCLUDE: • Internal Input Matching • Gold Metalization • Emitter Ballasting


    Original
    umil100 PDF

    trw rf

    Abstract: ACRIAN trw rf transistors acrian inc trw transistors TRW MICROWAVE acrian rf power FUJITSU MICROWAVE MRF648 TPM4130
    Contextual Info: UHF AND MICROWAVE TRANSISTORS Item Number Part Number Manufacturer Max V BR CBO foac Max Gp Po N.F. at fT••t Ie Max (W) (Vl (Hz) (dB) (W) jdB) (Hz) JA) PD Mati. Toper Max jOe) Package Style UHFIMicrowave Transistors, Bipolar NPN (Cont'd) 5 10 UMOB55 RZ2731B60W


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    umob55rz2731b60wrz2833b60wrz3135b50w+16ome25ome30lmkb12100w5bal0204umil60umil70trw rfacriantrw rf transistorsacrian inctrw transistorstrw microwaveacrian rf powerfujitsu microwavemrf648tpm4130 PDF

    filter for GPS spice

    Abstract: BLF578 diode smd marking BUF GP 750 BLF7G10-300p AX 2008 lqfp48 GP 809 DIODE BF1118 MPAL2731M15 bgu7051 BB 505 Varicap Diode
    Contextual Info: RF手册第14版 用于高性能RF产品的应用和设计手册2010年5月 恩智浦半导体RF手册第14版 3 高性能RF适用于最高要求的应用 恩智浦RF手册令设计更简易 恩智浦RF手册–当今RF设计市场上最重要的参考工具之一–展示了我们从小信号到大功率


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    rf2010567sigejesd204a-dacadcjesd204a-+15aec100bfr90bfq33tff1004hnjesd204ablf578filter for gps spicediode smd marking buf gp 750blf7g10-300pax 2008 lqfp48gp 809 diodebf1118mpal2731m15bgu7051bb 505 varicap diode PDF

    MHW721A2

    Abstract: 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503
    Contextual Info: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide Amplifier Data Sheets 5 Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions 8 Cross Reference and Sales Offices 9 MOTOROLA RF DEVICE DATA


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    1phx11136q-14mhw721a213001 s 6d transistoratv5030* motorola+72n5591 motorola13001 6d transistorbgy41mhw710-1construction linear amplifier 2sc19457119 amperexbf503 PDF

    transistor 5cw

    Abstract: transistor 5cw 61 sd1466 transistor 6cw TRANSISTOR REPLACEMENT GUIDE 6CW transistor MS3016 transistor selection guide PH1516-2 STM1645-10
    Contextual Info: Richardson Electronics 800-737-6937 www.rfpowernet.com RF POWER TRANSISTOR SELECTION GUIDE August 2000 Table of Contents Preface Supplier - Product Matrix Tab Page HF VHF UHF VHF-UHF TV LINEAR General Purpose Cellular, GSM, Paging PCS, DCS, WLL 3G, WCDMA, UMTS, CDMA2000


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    cdma20002n6084blv102ca5815cs+15d1020uklf2810amrf175lvmsc75652ph1600-7sd1466transistor 5cwtransistor 5cw 61transistor 6cwtransistor replacement guide6cw transistorms3016transistor selection guideph1516-2stm1645-10 PDF

    LE79Q2281

    Abstract: 1N6761-1 2N2369AU 2N2907AUB BR17 datasheet transistor SI 6822 Dimming LED aplications Dimming LED Driver aplications GC4600 IC ZL70572
    Contextual Info: Product Portfolio 2013-2014 ng-edge Embed Power Matters. About Microsemi Microsemi Corporation is a leading provider of semiconductor solutions differentiated by power, security, reliability and performance. The company concentrates on providing solutions for applications where power matters, security


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    le79q22811n6761-12n2369au2n2907aub+6br17datasheet transistor si 6822dimming led aplicationsdimming led driver aplicationsgc4600ic zl70572 PDF

    sot-89 BV SMD TRANSISTOR MARKING CODE

    Abstract: bgu7051 MS1051 2SK163 BLF578 fm band BLF278 mosfet HF applications BFU610F TAN250A PTFA 210301E - 30 W 100MHz SMD RF Mixer
    Contextual Info: RFマニュアル第14版 RF製品用のアプリケーションお よび設計マニュアル2010年5月 NXPセミコンダクターズRFマニュアル第14版 3 最も要求の高いアプリケーションに向けたハイパフォーマンスRF NXPのRFマニュアルでRF設計がこれ


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    nxprf14jesd204aaec100rfbfr90+13rfbfq33tff1004hnfmf11070hnsot-89 bv smd transistor marking codebgu7051ms10512sk163blf578 fm bandblf278 mosfet hf applicationsbfu610ftan250aptfa 210301e - 30 w100mhz smd rf mixer PDF

    circuit diagram of GSM based home automation system

    Abstract: BF1118 MOBILE jammer GSM 1800 MHZ circuit diagram bgu7051 BLF578 CMMB antenna MRF6V2300N 300w power amplifier circuit diagram BF256B spice model maxim DVB
    Contextual Info: RF Manual 14th edition Application and design manual for High Performance RF products May 2010 2010 NXP B.V. copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by


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    circuit diagram of gsm based home automation systembf1118mobile jammer gsm 1800 mhz circuit diagrambgu7051+6blf578cmmb antennamrf6v2300n300w power amplifier circuit diagrambf256b spice modelmaxim dvb PDF

    MG1007-42

    Abstract: MG1020-M16 MSC1075M 1004mp MG1052-30
    Contextual Info: Power Matters. RF & Microwave Diode and Transistor Products Microsemi RFIS Integrated Solutions RF & Microwave Diode and Transistor Products Within this short form catalog are the combined product selection guides for Microsemi RF Integrated Solutions RFIS business unit RF & microwave diodes and power transistors. RFIS diode products are


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    ms4-009-13mg1007-42mg1020-m16msc1075m+21004mpmg1052-30 PDF

    TXD10K40

    Abstract: TXD10K60 BT1690 BT808 1N5004 TXD10H60 mp8706 TXC10K40 BSTC1026 BT13G
    Contextual Info: N AMER PHILIPS/DISCRETE 86 BSE D • X'Ql-oX bbS3131 QOlbSbH 4 ■ General Information CROSS REFERENCE GUIDE INDUSTRY PART NUMBER PG. NEAREST EQUIV. NO. 0105-50 0204-50 0510-25 12F5 12F5R BLU52 BLU52 BLV97 BYX99-300 BYX99-300R 12F10 12F10R 12F20 12F20R 12F40


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    bbs3131blu521n321byw56+131n321ablv971n322txd10k40txd10k60bt1690bt8081n5004txd10h60mp8706txc10k40bstc1026bt13g PDF