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    UGF25025 Datasheets Context Search

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    Cap 10uf 35v 20 tant smt

    Abstract: UGF25025
    Contextual Info: UGF25025 25W, 2.5 GHz, 28V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET Designed for base station applications in the frequency band 2.3 to 2.5 GHz. Rated with a minimum output power of 25W, it is ideal for CW and Multi-Tone Amplifiers in Class AB operation.


    Original     		ugf25025-30dbc-100khz/100khz+2ugf25025fcap 10uf 35v 20 tant smt PDF

    semiconductors cross reference

    Abstract: UGF18030 cw 180 UGF16085 UPF14060 transistors cross reference list BLF3G21-30 BLC5G22-100 UGF25025 blf4g20-110b
    Contextual Info: Semiconductors Cross Reference: Philips LDMOS vs. Cree LDMOS Transistors Philips Type Cree Type Mode of Operation Voltage v Frequency Band (MHz) Output Power (W) Power Gain (dB) Drain Efficiency η (%) Package BLF1043 UPF1010 CW 26 940 10 16 60 440095 BLF3G21-30


    Original     		blf1043upf1010blf3g21-30upf1030+14ugf09030blf1046ugf09045ugf09060blf4g10-120semiconductors cross referenceugf18030cw 180ugf16085upf14060transistors cross reference listblc5g22-100ugf25025blf4g20-110b PDF