UF320 Search Results

uf3205

Abstract: 304 MOSFET UF3205L uf3205l-ta3-t
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UF3205 Power MOSFET HEXFET POWER MOSFET „ DESCRIPTION The UTC UF3205 uses advanced technology to provide excellent RDS ON , fast switching, low gate charge, and extremely efficient. This device is suitable for all commercial-industrial

F310

Abstract: F320 UF310 UF315 UF320
Contextual Info: Ultra Fast R ecovery R e ctifie rs UF310 UF320 X : Dim. Inches Minimum A B C D .188 1.00 .285 .046 M illim e te r Maximum Minimum .260 - .375 .056 4.78 25.4 7.24 1.17 Maximum Notes 6.50 Dia. 9.52 1.42 Dia. - PLASTIC D0201AD -II-: Microsemi Catalog Number

UF3205L

Abstract: mosfet vds25v ID 62A UF3205
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UF3205 Power MOSFET HEXFET POWER MOSFET „ DESCRIPTION The UTC UF3205 uses advanced technology to provide excellent RDS ON , fast switching, low gate charge, and extremely efficient. This device is suitable for all commercial-industrial

uf3205

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UF3205 Power MOSFET 110A, 55V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC UF3205 uses advanced technology to provide excellent RDS ON , fast switching, low gate charge, and extremely efficient. This device is suitable for all commercial-industrial applications at power

rg45

Abstract: UF3205G-TQ2-R
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UF3205 Power MOSFET HEXFET POWER MOSFET DESCRIPTION The UTC UF3205 uses advanced technology to provide excellent RDS ON , fast switching, low gate charge, and extremely efficient. This device is suitable for all commercial-industrial

UF320

Abstract: D0201AD UF310 UF315
Contextual Info: Ultra Fast Recovery Rectifiers UF310 - UF320 X D im . In ch es Minimum A B C D CATHODE BAND .188 1.00 .285 .046 M illim e te r M axim um Minim um .260 .375 .056 4.78 25 .4 7.24 1.17 M axim um Notes 6.50 -9.52 1.42 Dia. Dia. PLASTIC D0201AD -II-: Microsemi

UF3205L

Abstract: 110A 55V
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UF3205 Power MOSFET 110A, 55V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC UF3205 uses advanced technology to provide excellent RDS ON , fast switching, low gate charge, and extremely efficient. This device is suitable for all commercial-industrial

DO-214BA

Abstract: 1N6545 DO214BA
Contextual Info: Microsemi Ultra Fast Rectifiers UFR Part Number Microsemi Division Package Outline Type UFS315G UFS315J ER3C ! SF33 UF320 UFS320G UFS320J ER3D SF34 UF5402 UF5402GP UF330 UFS330G UFS330J SF35 1N6S43 ER3G UF340 UF5404 UF5404GP UFS340G UFS340J SF36 1N6544 UF350

Contextual Info: Ultra Fast Recovery Rectifiers UF310 : UF320 r D im . In c h e s M inim u m A B C D M illim e te r M ax im u m .188 1.00 .2 8 5 - .2 6 0 .0 4 6 M inim u m M a x im u m N o te s - .3 7 5 4 .7 8 2 5 .4 7 .2 4 .056 1.17 1.42 6 .5 0 Dia. 9 .5 2 Dia.

UF3205L

Abstract: UF3205
Contextual Info: UF3205 Preliminary Power MOSFET HEXFET POWER MOSFET „ DESCRIPTION The UTC UF3205 uses advanced technology to provide excellent RDS ON , fast switching, low gate charge, and extremely efficient. This device is suitable for all commercial-industrial applications at power dissipation levels to approximately 50 watts.

SMD Transistors w04 sot-23

Abstract: transistor SOT-23 w04 SB050 transistor IN4728A mosfet SMD w04 SN30SC4 smd diode code gs1m W01 SMD mosfet W04 sot 23 1s355
Contextual Info: RETURN TO PRODUCT CATALOG TABLE OF CONTENTS RETURN TO PRODUCT CATALOG INDEX RETURN TO DIODES INC. NEW PRODUCTS PAGE Product Catalog Diodes Incorporated 3050 E. Hillcrest Drive Westlake Village, CA 91362-3154 2000/2001 Specifications are subject to change without notice.

BC548 TRANSISTOR REPLACEMENT

Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
Contextual Info: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction

UF305

Abstract: D0201AD D-30 UF310 UF315 UF320
Contextual Info: Ultra Fast Recovery Rectifiers UF305, 310, 315, 320 : Dim. In ch e s Minimum A B C D .188 1.00 .285 .046 Millim eter Maximum Minimum .260 - .375 .056 4.78 25.4 7.24 1.17 Maximum N otes 6.50 Dia. 9.52 1.42 Dia. - g: PLASTIC D0201AD D Microsem i Catalog Number

CAT7105CA

Abstract: mp1410es G547E2 G547H2 G547F2 P5504EDG equivalent G547I1 SP8K10 SP8K10SFD5TB LD1117Al
Contextual Info: Diodes, Inc. - Cross Reference Industry Part Diodes, Inc. Equivalent Diodes, Inc. Nearest 1.5CE120C 1.5KE120CA N/A 1.5CE120CA 1.5KE120CA N/A 1.5CE12A 1.5KE12A N/A 1.5CE12C 1.5KE12CA N/A 1.5CE12CA 1.5KE12CA N/A 1.5CE13 1.5KE13A N/A 1.5CE130 1.5KE130A N/A 1.5CE130A

BY228 equivalent

Abstract: BYD14G RU20A cross reference
Contextual Info: VISHAY INTERTECHNO L O G Y , INC . INTERACTIVE data book Sinterglass Avalanche Diodes vishay semiconductors vSE-db0112-1009 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents

bvy27-200

Abstract: BY228 equivalent ERD29-08 ERC06-15s ERC05-10b BYD14J RGP15J equivalent BYD14G ERD28-06S BVY28-200
Contextual Info: VISHAY Vishay Semiconductors Cross Reference This guide includes a code letter system which designates the compatibility between Vishay Semiconductors devices and those of other manufacturers. Code Definitions 1 = equivalent 2 = minor electrical difference

Contextual Info: Ultra Fast Recovery Rectifiers UF305, 310, 315, 320 Millimeter Dim. In ch es Minimum A 8 C .188 1.00 .285 .046 Maximum Minimum .260 - .375 .056 4.78 25.4 7.24 1.17 Maximum Notes 6.50 Dia. 9.52 1.42 Dia. - PLASTIC D0201AD Microsemi Catalog Number Working Peak

EQUIVALENT BYD33D

Abstract: 1n5062 equivalent SUF5402 diode cross reference BYS21-45 BYS21-45 1N4007 general instruments BY255 itt da3/1000 1N6644 FR207 equivalent
Contextual Info: DISCRETE SEMICONDUCTORS Cross reference guide Power Diodes 1998 Dec 07 Philips Semiconductors Power Diodes Cross reference guide “Philips Type” refers to closest Philips alternative or direct equivalent if available. Always consider the application and

BT136-600E equivalent

Abstract: D2499 equivalent D1878 equivalent BT139-600 equivalent C4927 d1577 d1554 C5386 c5129 e13005 equivalent
Contextual Info: “Philips Type” refers to closest Philips alternative or equivalent if available. Always consider the application and compare data specifications before recommending the suitable Philips type. Notes: 1 - dual device. 2 - competitor RDS on falls between two Philips types, hence either stated device may be suitable.

LT GBL406

Abstract: SMBJ8.5CA 2KBP206 TS820-800T LT KBJ608G T1M5F600A 31DQ100 30BQ050 BYM95C SB0100
Contextual Info: SEMICONDUCTOR LITEON LITE-ON Cross Reference Competitor P/N 1.5CE10 1.5CE100 1.5CE100A 1.5CE100C 1.5CE100CA 1.5CE10A 1.5CE10C 1.5CE10CA 1.5CE11 1.5CE110 1.5CE110A 1.5CE110C 1.5CE110CA 1.5CE11A 1.5CE11C 1.5CE11CA 1.5CE12 1.5CE120 1.5CE120A 1.5CE120C 1.5CE120CA

BU4508DX equivalent

Abstract: BUT11APX equivalent S0806MH P0201MA TO92 BT136 application note diode cross reference BYW96E ct 2A05 diode BU2508Dx equivalent ST2001HI equivalent BU2508DF equivalent
Contextual Info: 6535 07-03-2001 06:32 Pagina 1 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140, Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 1 60 101 1248, Fax. +43 1 60 101 1210