TSTS7300 Search Results
TSTS7300 Datasheets (1)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| TSTS7300 | Vishay Intertechnology | GaAs IR Emitting Diodes in Hermetically Sealed TO18 Case | Original | 82.73KB | 5 |
TSTS7300 Price and Stock
Vishay Intertechnologies TSTS7300- Tape and Reel (Alt: TSTS7300) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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TSTS7300 | Tape & Reel | 6 Weeks | 1,000 |
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Buy Now | |||||
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TSTS7300 | Bulk | 1,000 |
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Buy Now | ||||||
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TSTS7300 | Bulk | 2,000 | 1,000 |
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Buy Now | |||||
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TSTS7300 | Box | 6 Weeks | 1,000 |
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Buy Now | |||||
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TSTS7300 | 7 Weeks | 1,000 |
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Get Quote | ||||||
tfk TSTS7300950 NM, GAAS, ROHS COMPLIANT, INFRARED EMITTING DIODE Infrared LED, 4mm, 1-Element, 950nm |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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TSTS7300 | 30,370 |
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Get Quote | |||||||
TSTS7300 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: TSTS7300 Vishay Semiconductors Infrared Emitting Diode, 950 nm, GaAs Description The TSTS730. series are infrared emitting diodes in standard GaAs technology in a hermetically sealed TO-18 package. Their glass lenses provide a high radiant intensity without external optics. |
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tsts7300tsts7302002/95/ec2002/96/ec+1 | |
TSTS7300Contextual Info: TSTS7300 VISHAY Vishay Semiconductors GaAs IR Emitting Diodes in Hermetically Sealed TO-18 Case Description The TSTS730. series are infrared emitting diodes in standard GaAs technology in a hermetically sealed TO-18 package. Their glass lenses provide a high |
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tsts7300tsts730d-7402523-jun-04 | |
TSTS730
Abstract: TSTS7300
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tsts7300tsts7302002/95/ec2002/96/ec+2 | |
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Contextual Info: TSTS7300 Vishay Semiconductors Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs FEATURES • Package type: leaded • Package form: TO-18 • Dimensions in mm : ∅ 4.7 • Peak wavelength: λp = 950 nm • High reliability • High radiant power • High radiant intensity |
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tsts73002002/95/ec2002/96/ec2011/65/eu+1 | |
TSTS730
Abstract: TSTS7300
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tsts7300tsts7302002/95/ec2002/96/ec+1 | |
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Contextual Info: TSTS7300 Vishay Semiconductors Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs FEATURES • Package type: leaded • Package form: TO-18 • Dimensions in mm : ∅ 4.7 • Peak wavelength: λp = 950 nm • High reliability • High radiant power • High radiant intensity |
Original |
tsts73002002/95/ec2002/96/ec11-mar-11 | |
TSTS7300Contextual Info: TSTS7300 Vishay Semiconductors Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs FEATURES • Package type: leaded • Package form: TO-18 • Dimensions in mm : ∅ 4.7 • Peak wavelength: λp = 950 nm • High reliability • High radiant power • High radiant intensity |
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tsts73002002/95/ec2002/96/ec18-jul-08 | |
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Contextual Info: TSTS7300 Vishay Semiconductors Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs FEATURES • Package type: leaded • Package form: TO-18 • Dimensions in mm : ∅ 4.7 • Peak wavelength: λp = 950 nm • High reliability • High radiant power • High radiant intensity |
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tsts73002002/95/ec2002/96/ec2011/65/eu+1 | |
CQX48B
Abstract: TLH04400 TLRG542
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OCR Scan |
tlbr5410tldr4400tldr4900tldr5400+9 | |
8021CContextual Info: Tem ic TSTS730. S e m i c o n d u c t o r s GaAs IR Emitting Diodes in Hermetically Sealed TO 18 Case Description The TSTS730. series are infrared emitting diodes in stan dard GaAs technology in a hermetically sealed T O -18 package. Their glass lenses provide a high radiant inten |
OCR Scan |
tsts730d-7402515-jul-968021c | |
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Contextual Info: TSTS730. Vishay Telefunken GaAs IR Emitting Diodes in Hermetically Sealed TO18 Case Description The TSTS730. series are infrared emitting diodes in standard GaAs technology in a hermetically sealed TO–18 package. Their glass lenses provide a high radiant intensity without external optics. |
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tsts730d-7402520-may-99 | |
TSTS7301
Abstract: TSTS7302 TSTS7300 TSTS7303
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d-74025tsts7301tsts7302tsts7300+1 | |
c1g smd
Abstract: bpv10nf TEMD2100
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cqy36ncqy37ntsus4300tsus4400+9 | |
"IR Emitter"
Abstract: TSTS7503 TSTS7101 30016
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tsha4400tsha4401tsha5200tsha52+10 | |
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Contextual Info: TSTS730. Vishay Telefunken GaAs IR Emitting Diodes in Hermetically Sealed TO18 Case Description The TSTS730. series are infrared emitting diodes in standard GaAs technology in a hermetically sealed TO–18 package. Their glass lenses provide a high radiant intensity without external optics. |
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tsts730d-7402520-may-99 | |
tept5600 response time
Abstract: Application NOTES TSAL4400 BPV11F Photo interrupter application notes SMD Transistor 1020 "Photo Interrupter" dual transistor CNY70 cny70 datasheet TEMT6000 TCND5000
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emit4-9337-2920vsa-sg0041-0512tept5600 response timeapplication notes tsal4400+8 | |
Leader 8020 schematics Oscilloscope
Abstract: smd diode schottky code marking GW sn 16848 APPLICATION NOTE BpW77 IEC-60050 BPw104 PHOTO TRANSISTOR BPW77 BPW34 PHOTODIODE THEORY Marking Code SMD databook 2010 bpw104s
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vse-db0103-0810leader 8020 schematics oscilloscopesmd diode schottky code marking gwsn 16848+7 | |
diode SR 360
Abstract: IEC 62471 60825-1 IEC-60825 diode sr 60 IEC62471 DIN 875 VSLB3940X01 IEC 60825-1 diode SR 360 datasheet
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11-sep-08diode sr 360iec 6247160825-1+7 | |
TSTS7301
Abstract: TSTS7302 TSTS7303 TSTS730 TSTS7300
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tsts730d-7402520-may-99tsts7301+3 | |
TSUS3400
Abstract: VCNL4000 VISHAY VSLB3940 DATASHEET smartphone proximity sensor TEMT6200FX01 BPW41N infrared emitters and detectors TCND5000 TCRT1010 TEMD6010FX01
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vmn-sg2123-1010tsus3400vcnl4000vishay vslb3940 datasheet+7 | |
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Contextual Info: TSTS730. VISHAY Vishay Semiconductors GaAs IR Emitting Diodes in Hermetically Sealed TO-18 Case Description The TSTS730. series are infrared emitting diodes in standard GaAs technology in a hermetically sealed TO-18 package. Their glass lenses provide a high |
Original |
tsts730d-7402511-may-04 | |
APPLICATION CIRCUIT OF TSAL4400
Abstract: TSAL6400 TSAL6100 TSHF5200 TSTS7102 CQX48B CQY36N CQY37N tsta7500 TSAL4400
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conta80089tshf5400tsmf1000tsmf3700+16 | |
tsta7500Contextual Info: V I S H A Y I N T E R T E C H N O L O G Y, I N C . AGING OF INFRARED EMITTER COMPONENTS TECHNICAL INFORMATION w w w. v i s h a y. c o m Aging of Infrared Emitter Components INTRODUCTION TYPICAL DEGRADATION OF RADIANT POWER AFTER 4000 h OPERATION DEVICE AGING AND DEVICE |
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vhn-ti2302-0306tsta7500 | |
TDS05160
Abstract: TDS05150 TDS03160 TDS03150 TDSR5150 9999 DIODE tsop1736 TLU02401 BPW2 silver ag wire Bond
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OCR Scan |
tlbr5410tldr4400tldr4900tldr5400+16 | |