TSHG5510 Search Results
TSHG5510 Datasheets (1)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| TSHG5510 | Vishay Semiconductors | Infrared, UV, Visible Emitters, Optoelectronics, IR EMITTER 830NM 5MM 40DEG2 | Original | 5 |
TSHG5510 Datasheets Context Search
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Contextual Info: TSHG5510 www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diode, 830 nm, GaAlAs Double Hetero FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • Leads with stand-off • Peak wavelength: λp = 830 nm |
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tshg55102002/95/ec2002/96/ec11-mar-11 | |
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Contextual Info: TSHG5510 www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diode, 830 nm, GaAlAs Double Hetero FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • Leads with stand-off • Peak wavelength: λp = 830 nm |
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tshg55102002/95/ec2011/65/eu12-mar-12 | |
TSHG5510Contextual Info: TSHG5510 Vishay Semiconductors High Speed Infrared Emitting Diode, RoHS Compliant, 830 nm, GaAlAs Double Hetero FEATURES • • • • • • • • • • • • • • 21061 DESCRIPTION TSHG5510 is an infrared, 830 nm emitting diode in GaAlAs double hetero DH technology with high radiant power and |
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tshg551018-jul-08 | |
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Contextual Info: TSHG5510 www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diode, 830 nm, GaAlAs Double Hetero FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • Leads with stand-off • Peak wavelength: λp = 830 nm |
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tshg55102002/95/ec2011/65/eujs709a+1 | |
TSHG5510Contextual Info: TSHG5510 Vishay Semiconductors High Speed Infrared Emitting Diode, 830 nm, GaAlAs Double Hetero FEATURES • • • • • • • • • • • • • • Package type: leaded Package form: T-1¾ Dimensions in mm : ∅ 5 Leads with stand-off Peak wavelength: λp = 830 nm |
Original |
tshg55102002/95/ec2002/96/ec11-mar-11 | |
TSHG5510Contextual Info: TSHG5510 Vishay Semiconductors High Speed Infrared Emitting Diode, 830 nm, GaAlAs Double Hetero FEATURES • • • • • • • • • • • • • • Package type: leaded Package form: T-1¾ Dimensions in mm : ∅ 5 Leads with stand-off Peak wavelength: λp = 830 nm |
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tshg55102002/95/ec2002/96/ec18-jul-08 | |
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Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . OPTOELECTRONICS Optoelectronics - IR Emitters with Radient Intensity up to 600 m/W/sr at 100 mA Infrared Emitters 830 nm, 850 nm, and 870 nm High Intensity and High Optical Power Infrared Emitters KEY FEATURES |
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vsmy3850tshg8200tshg5510vsmy7850x01+6 | |
TSSP4038Contextual Info: V i s h ay I nte r tec h nolog y, I nc . OPTOELECTRONICS Optoelectronics – Products for Industrial Applications Guide to Industrial Applications TABLE OF CONTENTS Introduction. 2 |
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vmn-ms6520-1311tssp4038 | |
mdd 2605
Abstract: HCPL 1458 8 pin opto KS0108 128X64 graphical LCD mdd 2601 transistor chn 952 hitachi INVC 618 Data Vision P135 H4 led smd headlight bulb transistor CHN 64 946 transistor chn 943
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element-14element14mdd 2605hcpl 1458 8 pin opto+8 | |
sensor BPW34 application note
Abstract: touch sensitive siren using transistor tsop sensor Infrared sensor TSOP 1738 vo2223 vo3120 infrared signal transmission distance sensor BPW34 application note APPLICATION NOTE BpW34 BP104 application note
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vmn-ms6520-1012sensor bpw34 application notetouch sensitive siren using transistortsop sensor+7 | |
TSUS3400
Abstract: VCNL4000 VISHAY VSLB3940 DATASHEET smartphone proximity sensor TEMT6200FX01 BPW41N infrared emitters and detectors TCND5000 TCRT1010 TEMD6010FX01
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vmn-sg2123-1010tsus3400vcnl4000vishay vslb3940 datasheet+7 | |
Vishay TYPE 40D
Abstract: Vishay 40d AC 1506 panasonic inverter dv 707
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vmn-ms6520-1506vishay type 40dvishay 40dac 1506+1 | |
TSHG8200
Abstract: CCTV infrared VSMY1850
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vmn-pt0211-1101tshg8200cctv infraredvsmy1850 | |
sensor BPW34 application note
Abstract: CEA-2038 TSOP4438 touch sensitive siren using transistor VSMY2850 BP104 application note TEMD6200 TSOP58038 vo2223 TEMD6200FX01
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vmn-ms6520-1201sensor bpw34 application notecea-2038tsop4438+7 | |
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Contextual Info: V i s h ay I n t e r t e c h n o l o g y, I n c . Optoelectronics エミッタ, ディテクタ, センサー Optoelectronics - エミッタ, ディテクタ, センサー 赤外線エミッタフォトディテクタ、オプティカルセンサー 赤外線エミッタ |
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vmn-sg2180-1305 | |
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Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . OPTOELECTRONICS Optoelectronics - Emitters, Detectors, Optical Sensors Emitters, Detectors, Sensors Infrared Emitters, Photo Detectors, and Optical Sensors Infrared Emitters PIN Photo Diodes Phototransistors |
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vcnl4010vcnl4020vcnl3020vmn-sg2123-1404 | |
Eye SafetyContextual Info: Eye Safety www.vishay.com Vishay Semiconductors Eye Safety Risk Assessment of Infrared Emitting Diodes According IEC 62471 based on CIE S009 INTRODUCTION RISK ASSESSMENT FOR LED - APPLICATIONS Product safety legislation (e.g. general product safety laws |
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22-jan-15eye safety | |