TP40N Search Results

Contextual Info: TP40NF03L N - CHANNEL 30V - 0.020 £2 - 40A TO-220 STripFET POWER MOSFET TYP E V dss R dS oii Id S TP40N F03L 30 V < 0.0 22 Q. 40 A . TYPICAL RDS(on) = 0.020 £2 . LOW THRESHOLD DRIVE DESCRIPTION This Power MOSFET is the latest development of STMicroelectronics unique ’’Single Feature

tp40n

Contextual Info: TP40N06L TP40N06LFI SCS-THOMSON |[iJOT *§ N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR ADVANCE DATA TYPE . . . . . . • . . d ss R D S o n Id 60 V 60 V 0.04 i l 0.04 £2 40 A 22 A V S TP40N 06L S TP40N06LFI AVALANCHE RUG G EDN ESS TECHNOLO GY

STP40N06L

Abstract: 3013A STP40N06LFI vdgr test circuit schematic diagram d
Contextual Info: SGS-THOMSON TP40N06L TP40N06LFI ¡LIOT Q«S N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR ADVANCE DATA TYPE TP40N06L S TP40N06LFI V d ss R 0S(on Id 60 V 60 V 0.04 a 0.04 £2 40 A 22 A . . . . . • . AVALANCHE RUGGEDNESS TECHNOLOGY 100% AVALANCHE TESTED

STP40N

Contextual Info: £jï 40 05 40 05 SGS-THOMSON ULKgraMOeS STP N STP N FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYP E S TP40N 05 TP40N 05FI V dss RDS on Id 50 V 50 V < 0 .0 3 5 Q. < 0 .0 3 5 Q. 40 A 23 A TYPICAL R D S (on) = 0.03 £2 . AVALANCHE RUGGED TECHNOLOGY

stp40n05

Contextual Info: *57 TYPE SGS-THOMSON IU O T K Ì N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR V TP40N05 S TP40N05FI TP40N05 TP40N05FI R D S {on Id 0.035 £2 0.035 n 40 A 22 A dss 50 V 50 V • ■ . . . . AVALANCHE R UG G EDNESS TECHNOLO GY 100% AVALANCHE TESTED

Contextual Info: MOTOROLA Order this document by TP40N10E/D SEMICONDUCTOR TECHNICAL DATA Advance Data Sheet M TP40N10E TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate This advanced TMOS E-FET is designed to withstand high energy in the avalanche and commutation modes. The new energy

STP40N10

Abstract: 100VDS
Contextual Info: £jï 40 10 40 10 SGS-THOMSON ULKgraMOeS STP N STP N FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYP E S TP40N 10 S T P 4 0 N 1 0FI V dss RDS on Id 100 V 100 V < 0 .0 4 Q. < 0 .0 4 Q. 40 A 22 A • TYPICAL R D S (on) = 0.035 £2 . AVALANCHE RUGGED TECHNOLOGY

MFE9200

Abstract: BUZ84A BUZ90 equivalent IRF150 MOSFET AMP circuit BUZ35S MTP40N06M IRFZ22 mosfet 1RF620 MTM12N10L MTP25N10E
Contextual Info: MOTOROLA SC XSTRS/R IM E F D | b3b?254 O O fl'ìB n 1 | Selection by Package by contacting a Motorola sale office In your area or by con­ tacting a Motorola Literature Distribution Center listed on the back cover. Order the disk by requesting DK101/D. The product listed in Tables t through 22 have been com­

IRFD1Z3 equivalent

Abstract: 8N60 equivalent TP8N20 TP8N10 siemens semiconductor manual What is comparable with IRF 3205 2N6823 irf8408 MTM5N90 designers datasheet smps cook circuit
Contextual Info: The information in this book has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. Motorola reserves the right to make changes with­ out further notice to any products herein to improve reliability, function or design. Motorola does not

7N90FI

Abstract: 4N80FI 8n80 TP20N 8N80F 9N80FI 4N90F y 4m TSD4M450V 5N90
Contextual Info: SELECTION GUIDE - BY VOLTAGE V BR DSS (V ) ^D Sfon) * ? max Id (A) Package Type iD(max) Ptot (A) (W ) (Q ) g ts C iss min Page (S ) max (pF) * 1000 0 .7 7 0 9 .0 IS O T O P TSD 14N 100V 1 4 .0 310 8 .0 7000 1000 0 .7 7 0 9 .0 IS O T O P TSD 17N 100V 1 7 .0

hall marking code A04

Abstract: M143206EVK differences uc3842a uc3842b toshiba satellite laptop battery pinout 2N3773 audio amplifier diagram toshiba laptop battery pack pinout BC413 motorola transistor sj 5812 M68HC705X16 ABB inverter motor fault code
Contextual Info: Introduction Advanced Digital r i Consumer Products L-l Microcomputer Components [2 Logic: Standard, Special p , and Programmable I-5* Analog and Interface Integrated Circuits Semiconductor r= Components Group L5 Product Literature and r~ Technical Training L”