TP2106K1 Search Results

p-channel sot-23 p1l

Abstract: TP2106K1 TP2106N3 SOT-23 Marking code MU T-23 p-channel sot-23 .5A marking 4U diode MARKING p1l tp2106
Contextual Info: TP2106 &à Supertex inc. P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Standard Commercial Devices BVdss/ R DS ON ^GSfth) (max) 60 (max) -2.0V b v dgs -60V Order Number/Package TO-92 SOT-231 TP2106K1 TP2106N3 Product marking for SOT-23:

Contextual Info: TP2106K1 Transistors P-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)60 V(BR)GSS (V)20 I(D) Max. (A) I(DM) Max. (A) Pulsed I(D)160m @Temp (øC)150õ IDM Max (@25øC Amb)800m @Pulse Width (s) (Condition)300u Absolute Max. Power Diss. (W)360m# Minimum Operating Temp (øC)-55

MARKING CODE DG SOT 23

Abstract: TP2106N3
Contextual Info: TP2106 inc. P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Standard Commercial Devices BVdss / R[>S ON ^ G S flh ) B V Dg s (max) (max) -60V 6£i -2.0V Order Number/Package SOT-231 TO-92 TP2106K1 TP2106N3 Product marking for SOT-23: P1L*

VP1304N2

Abstract: TP2540ND VN1304N3 VP3203N3 LND150N8 VN3205N5 VN1310N3 TN2510N8 TN0102N2 VP1306N2
Contextual Info: _ _ fflpSupertex inc. Device Page # Device Page # Device A lp h a n u m e ric Index Page # Device Page# 2N7002 BSS123 DN2535N2 DN2535N3 DN2535N5 20 24 28 28 28 TN2106K1 TN2106N3 TN2124K1 TN2501N8 TN2501ND 57 57 61 63 63 TP2504ND TP2506ND TP2510N8 TP2510ND

TP0610T

Abstract: VN2110K1 ZVN3320F TN2124K1 vp3306 vp3310
Contextual Info: ^ S u p ertex ine. SOT-23 MOSFET Products Industry Part Number Polarity b v dss ^GStth V min) V (max) R dS(ON) ^DS(ON) Il (max) VGS (V) lD (mA) il (max) Ve s (V) C|SS C0ss ID (mA) PF PF Supertex Part Number TN2124K1 2N7001 N 240 2.5 85 10 50 45 4.5 20 30

pj 89 diode

Abstract: HV7708PG HV7808 pj 44 diode HV5808 VQ10003 VN 300 tp2106 220v ac to 9v dc converter pj 56 diode
Contextual Info: M Supertex m e. Selector Guides MOSFETs S upertex enhancem ent- and depletion-m ode MOSFETs, utilizing vertical and lateral double-diffused processes, are suitable for a w ide variety of applications. They feature low capacitance for ease of drive and low gate-source threshold voltages fo r direct