TP0102 Search Results

Contextual Info: TP0102N3 Transistors P-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)20 V(BR)GSS (V)20 I(D) Max. (A) I(DM) Max. (A) Pulsed I(D)500m @Temp (øC)150õ IDM Max (@25øC Amb)2.0 @Pulse Width (s) (Condition)300u Absolute Max. Power Diss. (W)1.0# Minimum Operating Temp (øC)-55

TP0102N3

Abstract: TP0102 TP0104 TP0104N8 mos die TP0104N3 TP0102ND TP0104N2 TP0104ND
Contextual Info: TP0102 TP0104 E – TP0104 T E L O S B –O Low Threshold P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVDSS / BVDGS RDS ON (max) VGS(th) (max) ID(ON) (min) TO-39 TO-92 TO-243AA* Die† -20V 4.0Ω -2.4V -0.85A

Contextual Info: - i l m m m w * vtu u t/u m I r , ZJ r r • : TP0102 TP0104 g mm\ « « « Low Threshold _ ip* wm m m rm w»" 'iniini tm m tfffm P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information bv dss/ Order Number / Package ^DS ON ^GS(th) ^D(ON) b v dgs

TP0104N3

Abstract: TP0102 TP0102N3 TP0102ND TP0104 TP0104N2 TP0104N8 TP0104ND
Contextual Info: TP0102 TP0104 Low Threshold P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVDSS / BVDGS RDS ON (max) VGS(th) (max) ID(ON) (min) TO-39 TO-92 TO-243AA* Die† -20V 4.0Ω -2.4V -0.85A — TP0102N3 — TP0102ND -40V

Contextual Info: TP0102 TP0104 SuperH E X in c . _ Low Threshold P-Channel Enhancement-Mode Vertical DMOS FETs f*DS ON| V (max (max) If Ordering Information -20V 4.o n -2.4V -40V 4.0Î2 -2.4V bC g s (wi| Order Number / Package TO-39 TO-92 TO-243AA* Diet

TN0624N2

Abstract: TN0620ND TN0624N3 TN0624N5 TN0624ND TP0102N2 TP0102N3 TP0102ND TP0104N2 TP0204N3
Contextual Info: - f JR * £ ÍS Ta=25°C t Vd s Vgs s « tt « i Vd g * (V) SUPERTEX SUPERTEX N TN0624N3 TN0624N5 TN0624ND SUPERTEX SUPERTEX SUPERTEX N TN1110ND TP0102N2 TP0102N3 SUPERTEX SUPERTEX SUPERTEX N TP01D2ND TP0104N2 TPÛ104N3 TP0104ND TPÛ202N2 TP0202N3 TP02Ü2ND

TP0104N3

Abstract: TP0104N8 TP0102 TP0104 TP0104N2 p-channel DMOS TO-243AA TP0102N2 TP0102N3 TP0102ND
Contextual Info: TP0102 TP0104 Low Threshold P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVDSS / BVDGS RDS ON (max) VGS(th) (max) ID(ON) (min) TO-39 TO-92 TO-243AA* DICE† -20V 4.0Ω -2.4V -0.85A TP0102N2 TP0102N3 — TP0102ND

TP0102N2

Contextual Info: TP0102N2 Transistors P-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)20 V(BR)GSS (V)20 I(D) Max. (A) I(DM) Max. (A) Pulsed I(D)900m @Temp (øC)150õ IDM Max (@25øC Amb)2.0 @Pulse Width (s) (Condition)300u Absolute Max. Power Diss. (W)3.5# Minimum Operating Temp (øC)-55

2N3609

Abstract: 2N4120 2N4067 2N5548 diode 600m nec 500t 3sj11a 3n156 3N155 to99 mosfet
Contextual Info: MOSFET Item Number Part Number Manufacturer V BR DSS loss Max (V) (A) Po Max (W) ros (on) (Ohms) 9FS VGS(th) Min (S) Max (V) elN Max (F) tr Max (s) tf Max (s) Toper Max (OC) Package Style P-Chann I Enhanc ment-Typ , (Cont'd) 5 10 15 20 25 30 TP0102N3 TPOS02N3

Contextual Info: TP0102 ^ Supertax; inc- TP0104 Low Thresh old P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Standard Commercial Devices BVdss/ ^ D S O N V<3S(th) ' d (ON ) b v dgs (max) (max) (min) -20V 4.0£2 -2.4V -40V 4.0ÌÌ -2.4V Order Number / Package

Contextual Info: TP0102 TP0104 S u p e r te x in c . Low Threshold P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information R d s 0N ' , GS<th) b v dgs (max) (max) -20V 4.on -2.4V -40V 4.0Î2 -2.4V Order Number / Package JÎ BVdss/ TO-39 TO-92 TO-243AA* DICE* -0.85A

Contextual Info: ^ Supertex inc. TP01L Low T h r e s h o ld P'Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Standard Commercial Devices f Order Number / Package BVdss ! BVdgs ^DS ON ^GS(th) ^D(ON) (max) (max) (min) TO-39 TO-92 TO-243AA* DICEt -20 V 4.0Î2

VP1304N2

Abstract: TP2540ND VN1304N3 VP3203N3 LND150N8 VN3205N5 VN1310N3 TN2510N8 TN0102N2 VP1306N2
Contextual Info: _ _ fflpSupertex inc. Device Page # Device Page # Device A lp h a n u m e ric Index Page # Device Page# 2N7002 BSS123 DN2535N2 DN2535N3 DN2535N5 20 24 28 28 28 TN2106K1 TN2106N3 TN2124K1 TN2501N8 TN2501ND 57 57 61 63 63 TP2504ND TP2506ND TP2510N8 TP2510ND

TN0604N3

Abstract: HV5808 VQ1000 VP2210 HV50530 HV5708 TP0606N3 VP0635N5 VQ1001 replacement 2N6659 supertex
Contextual Info: Supertex Inc. OBSOLETE PRODUCT LIST Updated 12/13/02 Obsolete Part # Pkg Suggested Replacement Same pkg Suggested Replacement - Sim. Elec. (If same pkg alt is not close) Drop-In Alt Status 2N6659 VN2210N2 TN0104N3 obs 2N7007 TN5325N3 - obs AN0332 CG -

TN0102N3

Abstract: VN1304N3 logic pulser specifications VP1304N3 TN0620N3 TP0102N3 TP0620N3
Contextual Info: VN/VP13 Series Application Note AN–D8 High Voltage Pulser Circuits Introduction Circuit Description/Design Considerations The high voltage pulser circuit shown in Figure 1 utilizes Supertex complementary N- and P-channel DMOS transistors to achieve excellent performance and efficiency with minimal components.

TCA780

Abstract: TFK U 111 B TFK U 4614 B TFK S 186 P TFK U 217 B TFK BP w 41 n TFK BPW 41 N Tfk 880 TFK 148 TDSR 5150 G
Contextual Info: Industry Part Number 1N3245 1N3611GP 1N3612GP 1N3613GP 1N3614GP 1N3725 1N3957GP 1N4001GP 1N4002GP 1N4003GP 1N4004GP 1N4005GP 1N4006GP 1N4007GP 1N4245GP 1N4246GP 1N4247GP 1N4248GP 1N4249GP 1N4678.1N4717 1N4728A.1N4761A 1N4933GP 1N4934GP 1N4935GP 1N4936GP

mosfet cross reference

Abstract: pj 929 diode pj 1229 diode BSS250 VN0109N5 pj 66 diode pj 929 BSS295 "direct replacement" BSS295 "cross reference" pj 69 diode
Contextual Info: Selector Guides Selector Guides MOSFETs The Supertex enhancement-mode and depletion-mode MOSFET families utilize both vertical and lateral double diffused MOS processes. They feature low parasitic capacitances with interdigitated structures for high-frequency operation. Their low gate threshold voltage is

logic pulser specifications

Abstract: VN1304N3 TN0102N3 logic pulser 100v 500ma diode TP0102N3 zener diode 15v switch 100mA 100V high speed Zener Diode 200v high voltage diodes
Contextual Info: VN/VP13 Series Application Note AN–D8 High Voltage Pulser Circuits Introduction Circuit Description/Design Considerations The high voltage pulser circuit shown in Figure 1 utilizes Supertex complementary N- and P-channel DMOS transistors to achieve excellent performance and efficiency with minimal components.

pj 89 diode

Abstract: LR645 equivalent FED-STD-209 pj 54 diode TN0110 equivalent pj 57 diode CCW SOT23 HV5808 220v ac to 12V 20A SMPS high-frequency control sot-89
Contextual Info: Supertexinc. Short Form Catalog '96 High Voltage Integrated Circuits and DMOS Transistors Supertex inc. Leadership in CMOS/D MOS Technologies Supertex, Inc. designs, develops, manufactures, and markets quality semiconductor products for use in data processing, tele­

logic pulser specifications

Abstract: ultrasound sonar logic pulser ultrasound pulser ic zener diode 1.8v to 200v TC6320 OUB 12V ultrasound transducer circuit pulse cpld TDS5104B tc6320 md1213 cpld
Contextual Info: AN-H53 Application Note High Voltage Pulser Circuits By Ching Chu, Sr. Applications Engineer Introduction The high voltage pulser circuit shown in Figure 1 utilizes Supertex’s complementary P- and N-channel transistors TC6320 driven by an MD1213 to achieve excellent

pj 89 diode

Abstract: HV7708PG HV7808 pj 44 diode HV5808 VQ10003 VN 300 tp2106 220v ac to 9v dc converter pj 56 diode
Contextual Info: M Supertex m e. Selector Guides MOSFETs S upertex enhancem ent- and depletion-m ode MOSFETs, utilizing vertical and lateral double-diffused processes, are suitable for a w ide variety of applications. They feature low capacitance for ease of drive and low gate-source threshold voltages fo r direct

VP1306N3

Abstract: TP0102N3 equal transistors TP0620N3 pulser high voltage pulser vp13 TN0620N3 logic pulser TN0104N3
Contextual Info: VN/VP13 Series Application Note AN–D8 High Voltage Pulser Circuits Introduction Circuit Description/Design Considerations The high voltage pulser circuit shown in Figure 1 utilizes Supertex complementary N- and P-channel DMOS transistors to achieve excellent performance and efficiency with minimal components.

Contextual Info: TP01L LJ Supertex inc. Lo w T h r e s h o ld P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVdss/ R d S<ON) V GS th) BV dgs (m ax) (max) If Standard Commercial Devices -20V 4.0SÌ -2.4V -40V 4.0£i -2.4V Order Num ber / Package TO-39

HV50530PG

Abstract: hv9910p-g TN0604N3 HV5808PJ VN2460N8-G HV-801 HV801 VP0120N5 VN0360N5 TN0520N3
Contextual Info: SUPERTEX INC - OBSOLETE PRODUCT LISTING [JANUARY 2011] Obsolete Part Number 2N6659 2N7007 AN0332CG AP0332CG BSS123 DN2535N2 DN2540N2 DN2620N3 DN2624N3 DN2625K6-G DN2635N3 DN2640N3 HV110K4-G HV111K4 HV1516P HV1616P HV1616PJ HV1816P HV1816PJ HV20220GA HV20220P