TMPD6916 Search Results

Contextual Info: TMPD6916 Diodes General Purpose Schottky Rectifier Military/High-RelN I O Max.(A) Output Current200m @Temp (øC) (Test Condition)25’ V(RRM)(V) Rep.Pk.Rev. Voltage40 I(FSM) Max.(A) Pk.Fwd.Sur.Cur. V(FM) Max.(V) Forward Voltage470m @I(FM) (A) (Test Condition)10m

BAS16 K2

Abstract: MARKING K2A TMPD4148 TMPD5711 TMPD6050 A8920SLR BAV70 TMPD2836 TMPD2838 TMPD6916
Contextual Info: 2 ‘TM PD’ GENERAL-PURPOSE and LOW-LEAKAGE DIO DES ELECTRICAL CHARACTERISTICS a t T A, = 25°C V Device Type Description Marking •f Max. mA TMPD914 TMPD2836 General-Purpose Common Anode 5D TMPD2838 Common Cathode A6 600 500 500 A2 ■r ‘ rr Max. Max.

marking K2 diode

Abstract: MARKING 5D DIODE schottky diode marking A7
Contextual Info: DIODE wffife SOT-23/TO-236AB ‘TM PD ’ GENERAL-PURPOSE a n d LOW-LEAKAGE D IO D ES ELECTRICAL CHARACTERISTICS a t T . = 25°C vF Description *rr Max. Max. nA (ns) <PF) 1 ,2 ,3 10 25 4.0 6.0 ANCK VBR Min. Max. Marking (mA) (V) (V) @IF (mA) 1.0 Device Type

bc 7-25 pnp

Abstract: transistor bc 7-25 2N5245 transistor 2n3819 cross reference TO-266AA 2N3904 731 jFET Array BFR30 "cross reference" 2N5308 cross reference 266AA
Contextual Info: DISCRETE SEMICONDUCTORS IN D EX AND CROSS REFERENCE Industry Number 1N914 1N4148 1N4150 1N5229 1N5230 Type Diode Diode Diode Zener Zener Pinning 2 3 A A A A A NC NC NC NC K K K K NC K 7-29 7-29 7-29 7-30 7-30 A A A A A NC NC NC NC NC K K K K K 7-30 7-30 7-30

bc 7-25 pnp

Abstract: transistor bc 7-25 transistor 724 731 zener diode transistor B 722 transistor Bc 2n2222 transistor BC 176 MPS6521 transistor 2N5952 TP2222A transistor
Contextual Info: DISCRETE SEMICONDUCTORS INDEX AND CROSS REFERENCE Industry Number Type Allegro Number s Allegro Package 1 Pinning 2 3 Ratings (Page) 1N914 Diode TMPD914 TO-236AB A NC K 7-29 1N4148 Diode TMPD4148 TO-236AB A NC K 7-29 1N4150 Diode TM PD4150 TO-236AB A NC K

Contextual Info: DIODES S O T -23/T O -236A B see also A 8 9 2 0 S L R ‘TMPD’ GENERAL-PURPOSE ELECTRICAL CHARACTERISTICS at TA, = 25°C V F Description Max. ‘ rr Max. Max. Pinning (V) (nA) (ns) <PF> 1,2,3 V BR Max. Min. Max. Marking <mA) (V) Device Type @ IF (mA)

Contextual Info: 2 ‘T M P D ’ G EN E R A L -PU R PO SE a n d LOW -LEAKAGE D IO D E S E L E C T R IC A L C H A R A C TER ISTIC S a t T A, = 25°C V Device Type Description Marking •f Max. mA Min. Max. (V) (V) @IF (mA) V BR ■r ‘ rr Max. Max. Co Max. Pinning (nA)

DIODE A6

Abstract: diode 5f TND903 DIODE CHIP 1N4148 A6 DIODE 1n4148 MONOLITHIC DIODE ARRAYS 1n4148 5D mark A6 DIODE 1N4148 diode 5d
Contextual Info: «tSPROGUE DIODES > DIODES » DIODES » DIODES » DIODES THE MARK OF SERIES TMPD MICROMINIATURE DIODES • Series T M P D consists of s ta n d a rd U .S .A . single or dual diodes. • Devices are molded in a T 0 - 2 6 3 A A high-profile or T O - 2 3 6 A B (low profile) pa cka g e . These pa cka ge s are

TMPD4150

Abstract: MARKING K2A A8920SLR TMPD4148 TMPD4153 TMPD4154 TMPD4448 TMPD459 TMPD5711 TMPD6916
Contextual Info: ALLEGRO MICROSYSTEMS INC blE D • D5DH33a D D D b 3 lì7 73T ■ AL6R DIODES SOT-23/TO-236AB see also A8920SLR ‘TMPD’ GENERAL-PURPOSE ELECTRICAL CHARACTERISTICS at TA = 25°C VF Device Type TMPD459 TMPD914 TMPD4148 TMPD4150 TMPD4153 ^B R Max. (mA) Min.

Diode 5A

Abstract: bkd marking TMPD4148 TMPD2835 TMPD2837 TMPD2838 TMPD4150 TMPD4153 TMPD4154 TMPD459
Contextual Info: AL LE GR O M I C R O S Y S T E M S 8 5 1 4 0 1 9 SP RA GU E. INC T3 D • DSGM33Ô S E M I C O N D S / ICS 0GD3b5? 93 D 0 3 6 2 7 1 *ALGR V T'Q / ~ 9 0 SMALL-OUTLINE DIODES j ‘TMPD’ General-Purpose and Low-Leakage Diodes ELECTRICAL CHARACTERISTICS at TA = 25°C

TXD10K40

Abstract: TXD10K60 BT1690 BT808 1N5004 TXD10H60 mp8706 TXC10K40 BSTC1026 BT13G
Contextual Info: N AMER PHILIPS/DISCRETE 86 BSE D • X'Ql-oX bbS3131 QOlbSbH 4 ■ General Information CROSS REFERENCE GUIDE INDUSTRY PART NUMBER PG. NEAREST EQUIV. NO. 0105-50 0204-50 0510-25 12F5 12F5R BLU52 BLU52 BLV97 BYX99-300 BYX99-300R 12F10 12F10R 12F20 12F20R 12F40