TL172 Search Results

Contextual Info: TL1723 Linear ICs Adjustable Positive Voltage Regulator status Military/High-RelN Load Current Max. A 150m Min. Adjustable Output Voltage1.2 Max. Adjustable Output Voltage37 Output Voltage Nominal (V)19 Drop-Out Volt Max.3.0 P(D) Max. (W)800m Nom. Supp (V)40

TL172

Abstract: TL172C
Contextual Info: TL172 C N O R M A LLY O FF SILICON H A LL-EFFEC T SW ITCH D2490, AUGUST 1977-RE VIS E D APRIL 1988 • Magnetic-Field Sensing Hall-Effect Input • On-Off Hysteresis • Small Size • Solid-State Technology • Open-Collector Output • Normally Off Switch

TL172C

Abstract: tl172 triacs bt 16 Tesla transistor D2490 Tesla sensor
Contextual Info: TL172C NORM ALLY OFF SILICON HALL-EFFECT SWITCH D 2 4 9 0 , A U G U S T 1 9 7 7 - R E V I S E D A P R IL 1 9 8 8 Magnetic-Fisld Sensing Hall-Effect Input • On-Off Hysteresis • Small Size • Solid-State Technology • Open-Collector Output • Normally Off Switch

TL1723C

Contextual Info: TL1723C Linear ICs Adjustable Positive Voltage Regulator status Military/High-RelN Load Current Max. A 150m Min. Adjustable Output Voltage1.2 Max. Adjustable Output Voltage37 Output Voltage Nominal (V)19 Drop-Out Volt Max.3.0 P(D) Max. (W)800m Nom. Supp (V)40

TLE2081

Abstract: ka bs 89 DDS4115 E 109 01 T40 16 ultrasonic TLE2081A TLE2081ACD TLE2081ACP TLE2081CP TLE2081Y
Contextual Info: TLE2081, TLE2081A, TLE2081Y EXCALIBUR HIGH-SPEED JFET-INPUT OPERATIONAL AMPLIFIERS S L O S 122A -JUNE 1993 - REVISED APRIL 1994 40-V/ns Slew Rate Typ Input Range Includes the Positive Supply High-Gain Bandwidth P ro d u c t. . . 10 MHz Macromodel Included

L298D

Abstract: SAS251S4 ugn3013 SAS251 UCN4815A ULN3782M UDN2981LW uc3646 mc1417p CA1725E
Contextual Info: AMS-105 GENERAL INFORMATION SEMICONDUCTOR CROSS REFERENCE in Alpha-Numerical Order The suggested Allegro replacement devices are based on similarity as shown in currently published data. Exact replacement in all applications is not guaranteed and the user should compare the specifications of the competitive and recommended Allegro replacement. Special caution must be exercised in attempting to do a reverse cross. In some instances, the competitive device is obsolete; in

EATON CM20A

Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Contextual Info: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main

LM7805ACH-ND

Abstract: TL174 tl173 PTVA035002EV V1
Contextual Info: PTVA035002EV Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 500 W, 50 V, 390 – 450 MHz Description The PTVA035002EV LDMOS FET is designed for use in power amplifier applications in the 390 MHz to 450 MHz frequency band. Features

TL272

Abstract: TL184 TL181 tl271 TL308 Tl187 transistor tl274 TL293 TL193 TL148
Contextual Info: PTMA080304M Confidential, Limited Internal Distribution Dual Wideband RF LDMOS Power Amplifier 30 W 2 x 15 W , 28 V, 700 – 1000 MHz Description The PTMA080304M integrates two wideband 2-stage LDMOS integrated amplifier in a 20-lead plastic package. It is designed for use

103SR5A-1

Abstract: SS81CA tl173c TL3019 SS44A 3144EUA CYD512 tl3020 UGN3503U 55SS16
Contextual Info: BB AUTOMAÇÃO www.bbautomacao.com Cross References of Hall Sensors/Switches The suggested replacement devices are based on similarity as shown in currently published data. Exact replacement in all applications is not guaranteed and the user should compare the

TL139

Abstract: PTFB183404 PTFB183404EF TL148 TRANSISTOR tl131 TL162 TL170 tl172 c105 TRANSISTOR TL145
Contextual Info: PTFB183404F Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 340 W, 1805 – 1880 MHz Description The PTFB183404F is a 340-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to

transistor c124

Abstract: TL184 TL272 tl271 TL181 TL279 tl298 TL168 TL308 TL300
Contextual Info: PTMA080304M Confidential, Limited Internal Distribution Dual Wideband RF LDMOS Power Amplifier 30 W, 700 – 1000 MHz Description The PTMA080304M integrates two wideband 2-stage LDMOS integrated amplifier in a 20-lead plastic package. It is designed for use

7805CT

Abstract: MOC5010 ip1717 UA741CN op amp TL081P LM3524N LM13080N 7824ct LM7915CK LM7905CK
Contextual Info: Master Designer Version 8.5 Component Library Reference Volume 2 October 1995 All rights reserved. No part of this publication may be reproduced, stored in a retrieval system, or transmitted, in any form or by any means-electronic, mechanical, photocopying, recording, or otherwise-without the prior

triac tag 8518

Abstract: 70146 DS3654 X2864AD 7 segment display RL S5220 TC9160 la 4440 amplifier circuit diagram 300 watt philips ecg master replacement guide vtl 3829 A-C4 TCA965 equivalent
Contextual Info: 1985 0 / 0 / CONTENTS VOLUME I Introduction to IC MASTER 3 Advertisers’ Index 8 Master Selection Guide Function Index I0 Part Number Index 40 Part Number Guide 300 Logo Guide 346 Application Note Directory 349 Military Parts Directory 50I Testing 506 Cross Reference

PA0016

Abstract: STR11006 SO41P PIONEER PA0016 7 segment to bcd converter 74c915 SAJ141 74HC145 tms1122 IC PA0016 KOR 2310 transistor
Contextual Info: Utgåva 2005-03-24 Alla artiklar i katalogen finns normalt i lager men det tillkommer och utgår kontinuerligt. För aktuell information om prisvärt industriöverskott / surplus surfa in på: http://www.labb.se/surplus.htm Tel: 08-641 86 30 Fax: 08-641 87 30

Contextual Info: TIBPAL16L8-5C, TIBPAL16R4-5C, TIBPAL16R6-5C, TIBPAL16R8-5C TIBPAL16L8-7M, TIBPAL16R4-7M, TIBPAL16R6-7M, TIBPAL16R8-7M HIGH-PERFORMANCE IMPACT-X PAL CIRCUITS SRPS011D - 03359, OCTOBER 1989 - REVISED SEPTEMBER 1992 TIBPALKL8’ C SUFFIX . . . J OR N PACKAGE

Contextual Info: PTFB183408SV High Power RF LDMOS Field Effect Transistor 340 W, 30 V, 1805 – 1880 MHz Description The PTFB183408SV is a 340-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to 1880 MHz frequency band. Features include input and output matching, high gain and thermally-enhanced package with earless flange.

TL244

Abstract: CW 7805 LM7805ACH-ND tl173 TL235 TL138 TL251 TL148 TL170 tl134
Contextual Info: PTVA035002EV Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 500 W, 50 V, 390 – 450 MHz Description The PTVA035002EV LDMOS FET is designed for use in power amplifier applications in the 390 MHz to 450 MHz frequency band. Features

Contextual Info: PTFB183408SV Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 340 W, 30 V, 1805 – 1880 MHz Description The PTFB183408SV is a 340-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to

thyristor TAG 8506

Abstract: nais inverter vf 7f operation manual 922AA1Y-A4P optek A400 817 Sprague 513D sprague 926c Sprague 195P Rapa relay 12vdc triac tag 8948 Mascot 719
Contextual Info: TABLE OF CONTENTS Catalog Number 11Q New For 1989! • Over 7,900 New Products • 13 New M anufacturers PRODUCT INDICES tiamp*,'fminei forskSockets ' Solder Equipment endTtfob ] vriHp\< lint Equipment, Panel Meters, Aejulpmant, i A P R E M IE R C o m p an y

AC125K

Abstract: 6AN7 tungsram 3S035T-1 ecc83 application notes ECL86 DG 7-123 tungsram AC125UZ PENTODE pl 508 ot-400 tungsram
Contextual Info: TUNGSRAM 1 ELECTRON TUBES AND SEMI­ CONDUCTORS 1979 RADIO & TV RECEIVING TUBES OSCILLOSCOPE & MONITOR TUBES TRANSMITTING TUBES, RECTIFIERS & MICROWAVE TUBES SEMICONDUCTORS RECEIVING TUBES CONSUMER TYPES INDUSTRIAL TYPES VOLTAGE REGULATORS TY P E ASSO R TM EN T

c5088 transistor

Abstract: transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N
Contextual Info: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154

atc200b104kw50

Abstract: TL170 TL235 TL138 TL140 tl239 Tl141 TL163 tl172 tl147
Contextual Info: PTFB183404F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 340 W, 1805 – 1880 MHz Description The PTFB183404F is a 340-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to

LTS 547 EH

Abstract: LTS 543 210HL SXM 08 43A1h lts 543 pin configuration AAIBB ACC20 lts 547 ar 719 C203
Contextual Info: Chapter 7 Assembly Language Instructions The 'C2xx instruction set supports numerically intensive signal-processing op­ erations as well as general-purpose applications such as multiprocessing and high-speed control. The ’C2xx instruction set is compatible the ’C2x instruction