TGA4508 Search Results
TGA4508 Datasheets (3)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| TGA4508 | TriQuint Semiconductor | Ka Band LNA | Original | 342.85KB | 11 | ||
| TGA4508 | TriQuint Semiconductor | Ka Band Low Noise Amplifier | Original | 184.8KB | 10 | ||
| TGA4508-EPU | TriQuint Semiconductor | 37-42 GHz Low Noise Amplifier | Original | 103.65KB | 8 |
TGA4508 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
TGA4508-EPUContextual Info: Advance Product Information February 19, 2003 Ka Band Low Noise Amplifier TGA4508-EPU Key Features • • • • • • • Preliminary Measured Data Primary Applications Bias Conditions: Vd = 3 V, Id = 40 mA Ga in & R etu rn L o ss d B 40 30 Gain 20 |
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tga4508-epu | |
TGA4508
Abstract: 2005 ka
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tga45080007-inch2005 ka | |
12dBm
Abstract: Q102 TGA4508-EPU
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tga4508-epu115mm676mm0007-inch+2 | |
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Contextual Info: TGA4508 Ka Band Low Noise Amplifier Key Features • • • • • • • Preliminary Measured Data Primary Applications Bias Conditions: Vd = 3 V, Id = 40 mA Ga in & R e tu rn L o ss d B 40 30 Gain 20 Typical Frequency Range: 30 - 42 GHz 21 dB Nominal Gain |
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tga45080007-inch | |
TGA4508-EPUContextual Info: Advance Product Information December 4, 2003 Ka Band Low Noise Amplifier TGA4508-EPU Key Features • • • • • • • Preliminary Measured Data Typical Frequency Range: 30 - 42 GHz 21 dB Nominal Gain 2.8 dB Nominal Noise Figure 14 dBm Nominal P1dB @ 38 GHz |
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tga4508-epu0007-inch | |
TGA4508Contextual Info: TGA4508 Ka Band Low Noise Amplifier Key Features • • • • • • • Preliminary Measured Data Primary Applications Bias Conditions: Vd = 3 V, Id = 40 mA Ga in & R e tu rn L o ss d B 40 30 Gain 20 Typical Frequency Range: 30 - 42 GHz 21 dB Nominal Gain |
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tga45080007-inch | |
TGA2517
Abstract: TQP6M9002 TQM653029 TGS4304 SG-O1-16 TGA2503 TAT7469 TGA9092-SCC 854651 AH125
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cus937tga2517tqp6m9002tqm653029+7 | |
TGA2519-SG
Abstract: HPA Ku TGF4350-EPU HPA41 ic 7435 TGC4401-EPU ku vsat amplifier TGA2512 price tga8658 TGA2519
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asareavailableforkeybandsacrossdcto100ghzalldevicesare10011ghzcut-offfreqtgc1430f-epu+15 | |
TGA2517
Abstract: TQP6M9002 TQM7M5013 TGA4943-SL CGB241 TQM6M4003 bt ag402 TGA4956-SM TQM6M4048 TGA9092-SCC
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tga2517tqp6m9002tqm7m5013tga4943-sl+6 | |
TG2H214220-FL
Abstract: TGA2572 TGA2573 lte transceiver TGA2540-FL TQM963014 TGA2517 TQM6M9069 TQP6M9002 TQM7M5013
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tg2h214220-fltga2572tga2573lte transceiver+6 | |
TGA4508-EPU
Abstract: TGA4514-EPU
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tga4514-epu31dbc22dbmtga4508-epu | |
ka band lna
Abstract: TGA4820-EPU ka band Limiter HPA Ku diode 142 19C ka Band LNA, mixer TGB2001-EPU HPA-40 ka band power fet ka band space lna
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ka band lnatga4820-epuka band limiterhpa ku+6 | |
TGA2517
Abstract: TGA2540-FL TGA2573 TQM7M5013 TQP6M9002 tga2540 tqp340003 TQM726018 QFN28 6x6 TQM679002A
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tga2517tga2540-fltga2573tqm7m5013+6 | |
Mil-Std-883 Wire Bond Pull Method 2011
Abstract: MIL-STD-883 Method 2010 pHEMT transistor RF MESFET S parameters MESFET 0.15 phemt p-hemt TGA8310 MIL-STD-883 method 2011 GaAs 0.15 pHEMT
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mil-std-883 wire bond pull method 2011mil-std-883 method 2010phemt transistorrf mesfet s parameters+6 |