31DBC Search Results

transistor 2030

Abstract: 2030 transistor potentiometer 1k ohm SP-2030
Contextual Info: Preliminary Product Description SP-2030 Stanford Microdevices offers a high-performance LDMOS Transistor designed for base station applications in the 0.5 to 2.8 GHz frequency range. This novel Peak LDMOS has been optimized for high peak to average power in a

transistor c1718

Contextual Info: Product Description Stanford M icrodevices offers a high-perform ance LDMOS transistor designed for base station applications in the 1800 MHz to 2200 MHz frequency range. This novel Peak LDM OS has been optim ized for high peak to average power in a low cost, power flanged package. Ideal for

E4405B

Abstract: 8648c agilent signal generator jammer gsm 143FH jammer circuit TD-SCDMA 2010M MAX2306 MAX2308
Contextual Info: WIRELESS, RF, AND CABLE Mar 26, 2003 TD-SCDMA Reference Design V1.0 This application note presents Maxim's TD-SCDMA reference design V1.0. TDSCDMA is the Chinese Third Generation 3G standard. China's government has allocated 3 frequency bands: 1880~1920MHz, 2010~2025MHz, and 2300~2400MHz.

TGA4514

Contextual Info: TGA4514 2 Watt Ka-Band Power Amplifier Key Features • • • • • • • • • Measured Performance Primary Applications • • • Bias Conditions: Vd = 6 V, Id = 1150 mA Gain & R eturn Loss dB 30 GAIN 20 Typical Frequency Range: 31 - 35 GHz

CAP ALUM F 105

Abstract: 2030P
Contextual Info: Preliminary Product Description SP-2030P Stanford offers a high-performance LDMOS Transistor designed for base station applications in the 0.5 to 2.8 GHz frequency range. Ideal for CDMA, W-CDMA, TDMA, GSM, FM, Single or Multi-Carrier Power Amplifiers in Class A or

transistor z9

Abstract: transistor Z2 RT240PD cdma repeater circuit TRANSISTOR Z4 B 1449 transistor transistor z5 RT240 gsm wcdma repeater 1608 B 100NF
Contextual Info: Preliminary 10W Power Transistor RT240PD Product Features Application • High Output Power P1dB = 40dBm Typ. @2.14GHz • High Efficiency • High Power Gain G1dB = 17dB(Typ.)@900MHz G1dB = 13dB(Typ.)@2.14GHz • High Linearity • Hermetically sealed package

high power amplifier 5GHz

Abstract: ofdm equations 802.11a Amplifier MAX2840 MAX2840EBC-T MAX2841 MAX2841EBC-T MAX2840-MAX2841
Contextual Info: 19-2494; Rev 2; 8/03 KIT ATION EVALU E L B AVAILA 5GHz Linear Power Amplifiers The MAX2840/MAX2841 low-cost linear power amplifiers PAs operate in the 5GHz to 6GHz band. The PAs are designed for high gain and high linearity, which makes them ideal for use in IEEE 802.11a OFDM systems. The MAX2840 delivers +15dBm output power,

Contextual Info: TGA4514 2 Watt Ka-Band Power Amplifier Key Features • • • • • • • • • Measured Performance Primary Applications • • • Bias Conditions: Vd = 6 V, Id = 1150 mA Gain & R eturn Loss dB 30 GAIN 20 Typical Frequency Range: 31 - 35 GHz

E4405B

Abstract: E4432B tds-cdma transceiver agilent 8648c 8648c gsm jammer MAX2306 MAX2308 MAX2309 MAX2361
Contextual Info: Maxim > App Notes > Wireless and RF Keywords: rf, rfic, wireless, td-scdma, evm, acir, acs, rf ics, rfics Mar 26, 2003 APPLICATION NOTE 1962 TD-SCDMA Reference Design V1.0 Abstract: This application note presents Maxim's TD-SCDMA reference design V1.0. TD-SCDMA is the Chinese

potentiometer 1k ohm

Abstract: 7J23 ansi y32 TRANSISTOR n 522
Contextual Info: Preliminary Product Description SP-2055 Stanford Microdevices offers a high-performance LDMOS transistor designed for base station applications in the 1800 MHz to 2200 MHz frequency range. This novel Peak LDMOS has been optimized for high peak to average power in a low cost, power flanged package. Ideal for

potentiometer 1k ohm

Abstract: potentiometer 1k ansi y32.2 ansi y32 TORX1 TRANSISTOR n 522 200 ohm resistor
Contextual Info: Preliminary Product Description SP-2055P Stanford Microdevices offers a high-performance LDMOS transistor designed for base station applications in the 1800 MHz to 2200 MHz frequency range. This novel Peak LDMOS has been optimized for high peak to average

Contextual Info: Product Description SP-2030P Stanford offers a high-perform ance LDMOS Transistor designed for base station applications in the 0.5 to 2.8 GHz frequency range. Ideal for CDMA, W -CDM A, TDMA, GSM, FM, Single or M ulti-Carrier Power Am plifiers in Class A or

Contextual Info: Product Description SP-2030 Stanford M icrodevices offers a high-perform ance LDMOS Transistor designed for base station applications in the 0.5 to 2.8 GHz frequency range. This novel Peak LDMOS has been optimized for high peak to average power in a compact, power flanged ceram ic package. Ideal for CDMA,

TRANSISTOR c2324

Contextual Info: Product Description Stanford M icrodevices offers a high-perform ance LDMOS transistor designed for base station applications in the 1800 MHz to 2200 MHz frequency range. This novel Peak LDM OS has been optim ized for high peak to average power in a compact, low power package. Ideal for CDMA,

1/C9000 - 60005

Abstract: B/C9000 - 60005 R/C9000 - 60005
Contextual Info: AN-60-005 APPLICATION NOTE LZY-2+ and LZY-2X+ ULTRA-LINEAR RF AMPLIFIER 500 MHz - 1000 MHz 20 WATTS MIN., 1 dB COMPRESSION 40 dB MIN. GAIN AN-60-005 Rev.: C M150261 (04/14/15) File: AN60005.doc This document and its contents are the properties of Mini-Circuits.