TC59S1604 Search Results

Contextual Info: •^□^7240 Q02SGÜS 41G « T O S E TOSHIBA TOSHIBA LOGIC/MEMORY TC59S1604 TC59S1608 b^E » t a r g e t s il ic o n g a t e c m o s s p e c 2,097,152 BY 8 BIT SYNCHRONOUS DRAM DESCRIPTION The TC59S1604/1608 is a JEDEC-standard synchronous DRAM (SDRAM) using a single 3.3Part -volt

Contextual Info: TOSHIBA TC59S1604 TC59S1608 SILICON GATE c m o s 2,097,152 BY 8 BIT SYNCHRONOUS DRAM t a r g e t s p e c DESCRIPTION The TC59S1604/1608 is a JEDEC-standard synchronous DRAM SDRAM using a single 3.3Part -volt pow er supply. Various operational m odes can be initiated by controlling the state o f the RAS, CAS, W E. CS.

TC59S1604

Abstract: TC59S1608
Contextual Info: TOSHIBA TC59S1604 TC59S1608 SILICON GATE c m o s 2,097,152 BY 8 BIT SYNCHRONOUS DRAM t a r g e t DESCRIPTION The T C 59S 1604/1608 is a JEDEC-standard synchronous DRAM SDRAM using a single 3.3Part -volt pow er supply. Various operational m odes can be initiated by controlling the state o f the RAS, CAS, W E, CS,

TC59S1608AFT-10

Abstract: TC59S1608AFT10 TC59S1616AFT-1 TC59S1616AFT10 TC59S1616
Contextual Info: ! TOSHIBA TC59S1616AFT-10, -12 TC59S1608AFT-10, -12 TC59S1604AFT-10, -12 PRELIMINARY 524,288 WORDS X 2 BANK X 16 BITS 1,048,576 WORDS X 2 BANK X 8 BITS 2,097,152 WORDS X 2 BANK X 4 BITS SYNCHRONOUS DRAM Description TC59S1616AFT is a CMOS synchronous dynamic random access memory organized as 524,288-words x2-banks x16-bits

TC59S1616

Abstract: TC59S1616AFT TC59S1608AF
Contextual Info: T O S H IB A TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 524,288-WORD X 2 BANK X 16-BIT SYNCHRONOUS DYNAMIC RAM 1,048,576-WORDx2 BANKx8-BIT SYNCHRONOUS DYNAMIC RAM

TC59S1616AFT

Abstract: TC59S1616AFT-10 TC59S1616 TC59S1608AFT-10 TC59S1608 tc59s1608aft TC59S1616AFT10 TC59S1616AFT-1 tras 36ns TC59S1604AFT
Contextual Info: TOSHIBA TC59S1616AFT-10, -12 TC59S1608AFT-10, -12 TC59S1604AFT-10, -12 PRELIMINARY 524,288 WORDS X 2 BANK X 16 BITS 1,048,576 WORDS X 2 BANK X 8 BITS 2,097,152 WORDS X 2 BANK X 4 BITS SYNCHRONOUS DRAM Description TC59S1616AFT is a CMOS synchronous dynamic random access memory organized as 524,288-words x2-banks x16-bits and

tc59s1608

Contextual Info: TOSHIBA TC59S1608FT-10/12 TC59S1604FT-10/12 1,048,576 WORD X 2 BANK X 8 BIT /2,097,152 WORD X 2 BANK X 4 BIT SYNCHRONOUS DRAM Description TC59S1608FT is a CMOS synchronous dynamic random access memory organized as 1,048,576-words x2-banks x8-bits and TC59S1604FT organized as 2,097,152 words x2-banks x4-bits. Fully synchronous operations are referenced at the positive edges of

TC59R1809

Contextual Info: High Speed Dynamic RAM Rambus DRAM Capacity Type No. Data Transfer Rats ns Organization Max Min Hit Latency (ns) Read Writs Power Power Supply (V) Dissipation (mW) No. of Pins 4.5MBit ‘ TC59R0409VK 524,288 x 9 2 5 48 16 5V±10% 1325 32 18MBit "TC59R1809VK

Contextual Info: _ _ • TOSHIBA ^0^7240 DD2öb3S 315 T C 5 9 S 1 6 1 6 A F T -1 0 , -1 2 T C 5 9 S 1 6 0 8 A F T -1 0 , -12 T C 5 9 S 1 6 0 4 A F T -1 0 , -12 PRELIMINARY 524,288 WORDS X 2 BANK X 16 BITS 1,048,576 WORDS X 2 BANK X 8 BITS 2,097,152 WORDS X 2 BANK X 4 BITS SYNCHRONOUS DRAM

hy57v16801

Abstract: KM48S2020 FCT3932 KM44S4020 nec 44pin AN-156 FCT163501 KM48S HY57V16401-10 DIMM 72 pin out
Contextual Info: 2M/4M x 72 SYNCHRONOUS DRAM DIMM REFERENCE DESIGN APPLICATION NOTE AN-156 Integrated Device Technology, Inc. By Anupama Hegde INTRODUCTION DESIGN KIT CONTENTS Expectations of main memory performance have finally reached a point that calls for the use of synchronous DRAMs.

IBM025161LG5D60

Abstract: gm72v16821 MD908 KM48S2020 TC59R1809 GM72V1682 KM4232W259Q60 KM416S1120A IBM025171LG5D-70 KM44S4020AT
Contextual Info: Fujitsu Microelectronics Inc. Hitachi America Ltd. Hyundai Electronics America Inc. IBM Microelectronics LG Semicon America Inc. formerly Goldstar Mitsubishi Electronics America Inc. NEC Electronics Inc. Micron Technology Inc. Mosel Vitelic Inc. MoSys Inc.