TC5515 Search Results

TC5515

Contextual Info: TC5515 PRELIMINARY INFORMATION C BAND P OWE R FET G a A s F I E L D E F F E C T T R A N S I S T O R FEA TURES • • • • 27dBm output pow er at 1dB gain com pression High asso cia ted gain: 9.5dB @ 8G H z Low sou rce inductance High po w e r added efficiency: 30% @ 8G H z

AH512

Abstract: AH513 AH514 ah503 AH370 AH681 AH610 ah496 AH-512 AH374
Contextual Info: A LP H A N U ME RI CA L PRODUCT INDEX P/N ADC20010 Page P/N Page P/N Page 259 AH228 35 AH458 AFC378 55 AH229 35 AH479 17 AFC500 AH 152 43 35 35 AH480 17 29 AH230 AH232 AH 153 29 AH 154 35 35 AH155 29 29 AH233 AH234 AH235 35 AH156 29 35 AH157 29 AH236 AH237

Contextual Info: 'SC INTEGRATED CIRCUIT T O S H IB A T O S H IB A M O S D IGITAL IN T E G R A T E D CIRCUIT TC 551664J - 15, TC551664J - 20. T C 5 5 1 6 6 4 J - 2 5 TECHNICAL D A T A SILICON G A T E C M O S PRELIM INARY 65,536 W O R D x 16 BIT C M O S STATIC RAM DESCRIPTION

Contextual Info: FETs INDEX LOW NOISE FETs ♦ EC1840 - 40GHz LOW NOISE FE T . 85 NEW ♦ EC2623/TC2623 - 12GHz SUPER LOW NOISE H E M T.95 NEW ♦ EC2827 - 40GHz SUPER LOW NOISE H E M T . 99