TA245 Search Results

spi flash m25pxx

Abstract: M25PXX M25P10 TA245 ST M25P10
Contextual Info: TA245 TECHNICAL ARTICLE The Code Shadowing Approach: Choose The Correct Non-Volatile Memory Yvon Bahout, EEPROM and Serial NVM Division, Application Lab Manager, STMicroelectronics, Rousset significantly shorter than those for NVM. The access time of a standard parallel Flash is today

MCH3302

Abstract: marking JB
Contextual Info: Ordering number:ENN6369 P-Channel Silicon MOSFET MCH3302 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed swithcing. · 4V drive. unit:mm 2167 0.25 [MCH3302] 0.3 0.15 1 2.1 1.6 3 2 0.25 0.65 0.85 2.0

40664 SCR

Abstract: CD4001AD ICAN-6267 scr 40430 CD4014AD RCA 40669 RCA 17853 siemens transistor manual CD2500E 40555 SCR
Contextual Info: VtC/1 Solid State DATABOOK Series C O S /M O S Digital Integrated Circuits This D A T A B O O K contains complete data and related appli­ cation notes on COS/M OS digital integrated circuits presently available from R C A Solid State Division as standard products.

Contextual Info: MCH6604 Ordering number : EN6459B SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET MCH6604 General-Purpose Switching Device Applications Features • • • • Low ON-resistance Ultrahigh-speed switching 1.5V drive Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting

MCH6603

Contextual Info: Ordering number:ENN6446 P-Channel Silicon MOSFET MCH6603 Ultrahigh-Speed Switching Applications Package Dimensions unit:mm 2173 [MCH6603] 0.3 5 2 3 0.65 0.25 1 0.15 4 1.6 6 2.1 • Low ON resistance. · Ultrahigh-speed swithcing. · 2.5V drive. · Composite type with 2 MOSFETs contained in one

Contextual Info: Ordering number : EN6459C MCH6604 N-Channel Power MOSFET http://onsemi.com 50V, 0.25A, 7.8Ω, Dual MCPH6 Features • • • • Low ON-resistance Ultrahigh-speed switching 1.5V drive Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting

MCH6601

Abstract: TA-2457
Contextual Info: Ordering number:ENN6458 P-Channel Silicon MOSFET MCH6601 Ultrahigh-Speed Switching Applications Package Dimensions unit:mm 2173 [MCH6601] 0.3 5 2 3 0.65 0.25 1 0.15 4 1.6 6 2.1 • Low ON resistance. · Ultrahigh-speed swithcing. · 2.5V drive. · Composite type with 2 MOSFETs contained in one

Contextual Info: MCH6603 Ordering number : EN6446A P-Channel Silicon MOSFET MCH6603 General-Purpose Switching Device Applications Features • • • • Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting.

MCH6603

Contextual Info: MCH6603 Ordering number : EN6446B SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET MCH6603 General-Purpose Switching Device Applications Features • • • • Low ON-resistance. Ultrahigh-speed switching. 1.5V drive. Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting.

tic 1260 scr texas

Abstract: TA7265 2N6874 ta7719 2N6058 RCA 40408 transistor 2N2405 bd643 BD647 equivalent 2N3228
Contextual Info: RCA Bipolar Power Devices Table of Contents This DATABOOK contains detailed technical information on the full line of more than 750 RCA bipolar power devices consisting of: power transistors, SURGECTORs, ultra-fast-recovery rectifiers, power hybrid circuits, SCRs, and triacs.

TA-2457

Abstract: MCH6601 IT00079 non6458a IT00085
Contextual Info: MCH6601 注文コード No. N 6 4 5 8 B 三洋半導体データシート 半導体ニューズ No.N6458A とさしかえてください。 MCH6601 P チャネル MOS 型シリコン電界効果トランジスタ 汎用スイッチングデバイス 特長

Contextual Info: Ordering number : EN6446D MCH6603 P-Channel Power MOSFET http://onsemi.com –50V, –0.14A, 23Ω, Dual MCPH6 Features • • • • • Low ON-resistance Ultrahigh-speed switching 1.5V drive Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting

MCH6604

Contextual Info: MCH6604 Ordering number : EN6459A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET MCH6604 General-Purpose Switching Device Applications Features • • • • Low ON-resistance. Ultrahigh-speed switching. 1.5V drive. Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting.

Contextual Info: MCH6601 Ordering number : EN6458A P-Channel Silicon MOSFET MCH6601 General-Purpose Switching Device Applications Features • • • • Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting.

MCH3401

Contextual Info: Ordering number:ENN6443 N-Channel Silicon MOSFET MCH3401 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed swithcing. · 2.5V drive. unit:mm 2167 0.25 [MCH3401] 0.3 0.15 1 2.1 1.6 3 2 0.25 0.65 0.85

Contextual Info: MCH6601 Ordering number : EN6458B P-Channel Silicon MOSFET MCH6601 General-Purpose Switching Device Applications Features • • • • Low ON-resistance. Ultrahigh-speed switching. 1.5V drive. Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting.

Contextual Info: MCH6603 Ordering number : EN6446B P-Channel Silicon MOSFET MCH6603 General-Purpose Switching Device Applications Features • • • • Low ON-resistance. Ultrahigh-speed switching. 1.5V drive. Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting.

Contextual Info: MCH6601 Ordering number : EN6458B SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET MCH6601 General-Purpose Switching Device Applications Features • • • • Low ON-resistance. Ultrahigh-speed switching. 1.5V drive. Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting.

2N4064

Abstract: 2N4063 2N3440 TA-2470 2N3439 2N3439 IR 2N3440 HARRIS ta2458
Contextual Info: P ow er Transistors File N um b er 64 HARRIS SEMICOND SECTOR 2N3439, 2N3440, 2N4063, 2N4064 57E D • 4302271 O G IT ? ^ Ö «HAS. TERMINAL DESIGNATIONS H igh-V oltage Silicon N -P -N Planar Transistors F or H ig h -S p e e d S w itc h in g and L in e a r-A m p lifie r A p p lic a tio n s

Contextual Info: Ordering number : EN6458D MCH6601 P-Channel Power MOSFET http://onsemi.com –30V, –0.2A, 10.4Ω, Dual MCPH6 Features • • • • Low ON-resistance Ultrahigh-speed switching 1.5V drive Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting

MCH3401

Contextual Info: Ordering number:ENN6443 N-Channel Silicon MOSFET MCH3401 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed swithcing. · 2.5V drive. unit:mm 2167 0.25 [MCH3401] 0.3 0.15 1 2.1 1.6 3 2 0.25 0.65 0.85

2N4063

Abstract: 2n3440 equivalent RCA-2N3439 2N3439 2N3439 RCA 2N4064 2N3440 2N3440 rca rca 2n3440 RCA transistors 2n3440
Contextual Info: D l K j 3 a 7 S 387S0S1 Q E SOLID STATE a i 0 0 1 7 1 5 4 „ ,= q • “ , | 4 D T'B'S-I'B High-Voltage Power Transistors 2N3439, 2N3440, 2N4063, 2N4064 High-Voltage Silicon N-P-N Planar Transistors

Contextual Info: MCH6604 Ordering number : EN6459A N-Channel Silicon MOSFET MCH6604 General-Purpose Switching Device Applications Features • • • • Low ON-resistance. Ultrahigh-speed switching. 1.5V drive. Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting.

MCH3302

Contextual Info: Ordering number:ENN6369 P-Channel Silicon MOSFET MCH3302 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed swithcing. · 4V drive. unit:mm 2167 0.25 [MCH3302] 0.3 0.15 1 2.1 1.6 3 2 0.25 0.65 0.85 2.0