T1P29B Search Results

Contextual Info: PANASONIC INDL/ELEK -CIO 1SE D • 1,132055 QG1D4E1 0 ■ Silicon NPN Power Transistors TO-220 Package Absolute Maximum Ratings Ta=25°C Rem TIP29A T1P29B TIP29C Unit 80 100 V 80 100 V Symbol TIP29 VcBO 40 60 Collector-Emitter Voltage VCEO 40 60 Emitter-Base Voltage

TIP29

Abstract: IEC134 TIP29B TIP30 TIP50
Contextual Info: TIP29; 29A T1P29B; 29C J PHILIPS INTERNATIONAL SbE D I 713iDfl2fci □ □ 434HE= TIE WM PHIN SILICON EPITAXIAL BASE POWER TRANSISTORS T-33-o*{ NPN silicon transistors in a plastic envelope intended fo r use in ou tput stages o f audio and television am plifier circuits where high peak powers can occur. PNP complements are TIP30 series.

tip29 equivalent

Contextual Info: Power Transistors TIP29, TIP29A, TIP29B, TIP29C H A RR IS S E M I C O N D S E CT OR 27E D 990 4 3 0 2 27 1 0 G 2 0 5 3 2 b • HAS File Number B Epitaxial-Base, Silicon N-P-N VERSAWATT Transistors For P o w e r-A m p lifie r an d H ig h -S p e e d -S w itc h in g A p p licatio n s

Contextual Info: T1P29F TIP29AF; TIP29BF TIP29CF; TIP29DF J SILICON EPITAXIAL POWER TRANSISTORS NPN silicon power transistors in a SOT186 envelope with an electrically insulated mounting base, intended fo r use in audio output stages, general purpose amplifier and high-speed switching applications.

TIP290

Abstract: TIP29CF TIP30CF TIP29AF TIP29BF TIP29DF TIP29F TIP30AF TIP30BF TIP30DF
Contextual Info: T1P29F TIP29AF; TIP29BF TIP29CF; TIP29DF SILICON EPITAXIAL POWER TRANSISTORS NPN silicon power transistors in a SOT186 envelope w ith an electrically insulated mounting base, intended fo r use in audio o u tp u t stages, general purpose am plifier and high-speed switching applications.

saa 1094

Abstract: LG tv remote control schematic ir ic transistor BU 109 T1P29B thermo couple t
Contextual Info: fu ¡in fitti lattàia, Cutot lu i h a i bltqm u F lG l'R E 18. 4-20mA Current Loop Receiver with Input Overload Protection. PO L RE 19. 0-20mA/3-5V Receiver l/sing RCV420. 4 .: s Burr-Brown IC Data Book—Linear Products I Or, btt Culutr Sirria 2/ MM-Wfftt Utt Otifl

TIP29

Abstract: TIP29B TIP30
Contextual Info: TIP29; 29A TIP29B; 29C I^ SILICON EPITAXIAL BASE POWER TRANSISTORS NPN silicon transistors in a plastic envelope intended for use in output stages of audio and television amplifier circuits where high peak powers can occur. PNP complements are TIP30 series.

sx3704

Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Contextual Info: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide

LC02A

Abstract: T1P29C T1P29A T1P29B TIP29 TIP29A TIP29C TIP30 TIP30A TIP30B
Contextual Info: PA N A SO N IC IN D L /E L E K -C IO 12E D ^32052 Silicon NPN Power Transistors QG1D4E1 T -Z Z -C ñ TO-220 Package Absolute Maximum Ratings Ta=25°C Rem Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current " Peak Collector Current

2sc1061

Abstract: 2SC1626 2N6108
Contextual Info: Power Transistors TYPE POLA­ CASE NO. RITY U te min max Ic A V ce (V) max (V) fl COMPLE­ min MENTARY lc (A) (MHz) TYPE D45C12 MH0810 MH0816 MH0818 MH0870 P P P P P TO-220 TO-220 TO-220 TO-220 TO-220 30 12 10 10 30 4 3 1 1 4 80 30 60 80 50 20 40 40 40 40

T1P29

Abstract: T1P29B T1P29A
Contextual Info: TIP29, TIP29A, TIP29B, TIP29C NPN SILICON POWER TRANSISTORS Copyright 1997, Pow«r Innovations Limited, UK • Designed for Complementary Use with the TIP30 Series • 30 W at 25°C Case Temperature • 1 A Continuous Collector Current • 3 A Peak Collector Current

T1P29C

Abstract: TIP30C LC02A T1P29B TIP29 TIP29A TIP29C TIP30 TIP30A TIP30B
Contextual Info: P A N A SO N IC IN D L / E L E K -C IO 15E » fc ^ S Ö S E Silicon NPN Power Transistors DD1D4E1 D r-3 3 -o ? TO-220 Package Absolute Maximum Ratings Ta=250C Item Collector-Base Voltage Collector-Eniitter Voltage Emitter-Base Voltage Collector Current "

s0343

Abstract: T1P29B
Contextual Info: TIP29; 29A TIP29B; 29C PHILIPS INTERNATIONAL SbE D • 711002b □□4344b TIE « P H I N ' SILICON EPITAXIAL BASE POWER TRANSISTORS N P N silicon transistors in a plastic envelope intended fo r use in ou tp u t stages o f audio and television am plifier circuits where high peak powers can occur. P N P com plem ents are T IP 3 0 series.