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    SIA537EDJ Search Results

    SIA537EDJ Datasheets (1)

    Vishay Siliconix
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    SIA537EDJ-T1-GE3
    Vishay Siliconix FETs - Arrays, Discrete Semiconductor Products, MOSFET N/P-CH 12V 4.5A SC-70-6L Original PDF 14
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    Vishay Intertechnologies SIA537EDJ-T1-GE3

    - Tape and Reel (Alt: SIA537EDJ-T1-GE3)
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    Avnet Americas SIA537EDJ-T1-GE3 Tape & Reel 19 Weeks 6,000
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    Mouser Electronics SIA537EDJ-T1-GE3
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    Newark () SIA537EDJ-T1-GE3 Tape & Reel 5,991 10
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    SIA537EDJ-T1-GE3 Cut Tape 5,991 1
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    SIA537EDJ-T1-GE3 Cut Tape 96 1
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    TTI SIA537EDJ-T1-GE3 Reel 6,000
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    Vyrian SIA537EDJ-T1-GE3 14,167
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    Vishay Siliconix SIA537EDJ-T1-GE3

    SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 12V, 2-ELEMENT, N-CHANNEL AND P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET
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    Quest Components SIA537EDJ-T1-GE3 461
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    Vishay Huntington SIA537EDJ-T1-GE3

    MOSFET N/P-CH 12V/20V SC-70-6L / Mosfet Array N and P-Channel 12V, 20V 4.5A 7.8W Surface Mount PowerPAK® SC-70-6 Dual
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    Win Source Electronics SIA537EDJ-T1-GE3 6,000
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    SIA537EDJ Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: SiA537EDJ www.vishay.com Vishay Siliconix N-Channel 12 V D-S and P-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel RDS(on) () MAX. ID (A) 0.028 at VGS = 4.5 V 4.5 a 0.033 at VGS = 2.5 V 4.5 a 0.042 at VGS = 1.8 V 4.5 a 0.054 at VGS = -4.5 V


    Original
    SiA537EDJ 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . POWER MOSFETs MOSFETs - Small 2 mm x 2 mm Size and Low On-resistance PowerPAK SC-70 Half the Size of TSOP-6 Without Compromising On-Resistance KEY BENEFITS • 2 mm x 2 mm footprint area is 50 % of TSOP-6 with comparable on-resistance:


    Original
    SC-70 SiA519EDJ com/mosfets/powerpak-sc-70-package/ VMN-PT0131-1402 PDF

    Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs MOSFETs - Lowest On-Resistance Per Area Achieved for a P-Channel MOSFET TrenchFET Gen III - P-Channel Breakthrough P-Channel Technology Dramatically Cuts RDS on KEY BENEFITS • Lowest on-resistance per area achieved for a p-channel MOSFET: down to half of


    Original
    SC-75 Si1865DDL Si7997DP SiA923AEDJ SiA929DJ SC-70 SiA527DJ SiA537EDJ VMN-PT0197-1402 PDF

    Contextual Info: Vishay Intertechnology, Inc. P-CHANNEL GEN III MOSFETs PowerPAK Thermally Enhanced, High Current Handling Capability LITTLE FOOT® Wide Range of Battery Operated Applications MICRO FOOT® Best RDS on per Outline Area DUAL P-CHANNELS Thermally Enhanced,


    Original
    1212-8S Si7157DP SiSS23DN Si5415AEDU com/mosfets/12-rated-on-res/ VMN-MS6912-1406 PDF