SI7774DP Search Results

SI7774DP Datasheets (1)

Filter by Manufacturer

Vishay Siliconix

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
SI7774DP-T1-GE3		Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 60A 8-SOIC	Original	PDF		9

SI7774DP Price and Stock

Filter by Manufacturer

Select Manufacturer


Vishay Intertechnologies SI7774DP-T1-GE3 Trans MOSFET N-CH 30V 60A 8-Pin PowerPAK SO EP T/R
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	SI7774DP-T1-GE3		22			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Vishay Siliconix SI7774DP-T1-GE3 POWER FIELD-EFFECT TRANSISTOR, 60A I(D), 30V, 0.0038OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET (Also Known As: SI7774DP)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components ()	SI7774DP-T1-GE3		22			1 - 10 - 100 - 1000 - 10000 -	Buy Now
	SI7774DP-T1-GE3		22			1 - 10 - 100 - 1000 - 10000 -	Buy Now

SI7774DP Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: New Product Si7774DP Vishay Siliconix N-Channel 30 V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.0038 at VGS = 10 V 60 0.0047 at VGS = 4.5 V 60 VDS (V) 30 Qg (Typ.) 21.5 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21	Original	si7774dp 2002/95/ec si7774dp-t1-ge3 2011/65/eu +2js709a 02-oct-12	PDF
Contextual Info: New Product Si7774DP Vishay Siliconix N-Channel 30 V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.0038 at VGS = 10 V 60 0.0047 at VGS = 4.5 V 60 VDS (V) 30 Qg (Typ.) 21.5 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21	Original	si7774dp 2002/95/ec si7774dp-t1-ge3 2011/65/eu +112-mar-12	PDF
Contextual Info: Si7774DP_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,	Original	si7774dp an609 1885m 5123m +54249m 2619m 6687m 3501m 9519u	PDF
si7774 Contextual Info: New Product Si7774DP Vishay Siliconix N-Channel 30 V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.0038 at VGS = 10 V 60 0.0047 at VGS = 4.5 V 60 VDS (V) 30 Qg (Typ.) 21.5 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21	Original	si7774dp 2002/95/ec si7774dp-t1-ge3 18-jul-08 +1si7774	PDF
Contextual Info: New Product Si7774DP Vishay Siliconix N-Channel 30 V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.0038 at VGS = 10 V 60 0.0047 at VGS = 4.5 V 60 VDS (V) 30 Qg (Typ.) 21.5 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21	Original	si7774dp 2002/95/ec si7774dp-t1-ge3 11-mar-11	PDF
67120 Contextual Info: SPICE Device Model Si7774DP Vishay Siliconix N-Channel 30 V D-S MOSFET with Schottky Diode DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C	Original	si7774dp 18-jul-08 67120	PDF
Contextual Info: New Product Si7774DP Vishay Siliconix N-Channel 30 V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) () 30 0.0038 at VGS = 10 V 60 0.0047 at VGS = 4.5 V 60 Qg (Typ.) 21.5 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21	Original	si7774dp 2002/95/ec si7774dp-t1-ge3 2011/65/eu +112-mar-12	PDF
Contextual Info: V i s h ay I n t e r t e c h n o l o g y, I n c . Power MOSFETs MOSFETs - Save Space, Increase Performance SkyFET Integrated MOSFET and Schottky Diode Solution Key Benefits • • • • Increases efficiency for DC/DC converter applications Reduces space and solution cost by eliminating external Schottky diodes	Original	sis778dn sis782dn sis780dn siz914dt +1vmn-pt0104-1302	PDF
si4776 Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs - Save Space, Increase Performance AND TEC I INNOVAT O L OGY SkyFET N HN POWER MOSFETs O 19 62-2012 Integrated MOSFET and Schottky Diode Solution KEY BENEFITS • • • • Increases efficiency for DC/DC converter applications	Original	sir788dp si7774dp si7748dp si7772dp +7si4628dy si4752dy si4774dy si4712dy si4714dy si4776dy si4776	PDF
si7121 Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836 Contextual Info: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®	Original	mediu33-4-9337-2727 vmn-sg2127-1210 si7121 si4914b +8si-4102 si4599 si4483a sir166 irfd120 si7949 si4459a sir836	PDF