SI7686DP Search Results

Si7686DP

Abstract: Si7686DP-T1-E3 Si7686DP-T1-GE3
Contextual Info: Si7686DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0095 at VGS = 10 V 35 0.014 at VGS = 4.5 V 35 VDS (V) 30 Qg (Typ.) 9.2 nC PowerPAK SO-8 S 6.15 mm APPLICATIONS 5.15 mm 1 RoHS COMPLIANT Rectifier D • DC/DC Converters

mosfet p 3055

Abstract: MAR 737 7415 data sheet A 3055 AN609 Si7686DP
Contextual Info: Si7686DP_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

SI7686DP-T1-E3

Abstract: si7686dp
Contextual Info: Si7686DP New Product Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.0095 @ VGS = 10 V 35 0.014 @ VGS = 4.5 V 35 VDS (V) 30 Qg (Typ) 9 2 nC 9.2 D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKr Package

Si7686DP-T1-GE3

Abstract: Si7686DP-T1-E3 SI7686DP-T1 Si7686DP 7345
Contextual Info: Si7686DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0095 at VGS = 10 V 35 0.014 at VGS = 4.5 V 35 VDS (V) 30 Qg (Typ.) 9.2 nC PowerPAK SO-8 S 6.15 mm APPLICATIONS 5.15 mm 1 RoHS COMPLIANT Rectifier D • DC/DC Converters

Si7686DP

Contextual Info: SPICE Device Model Si7686DP Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

SI7686DP

Contextual Info: Si7686DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0095 at VGS = 10 V 35 0.014 at VGS = 4.5 V 35 VDS (V) 30 Qg (Typ.) 9.2 nC PowerPAK SO-8 S 6.15 mm APPLICATIONS 5.15 mm 1 RoHS COMPLIANT Rectifier D • DC/DC Converters

SI7686DP

Contextual Info: SPICE Device Model Si7686DP Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

SI7686DP-T1-E3

Abstract: Si7686DP S334
Contextual Info: Si7686DP New Product Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.0095 @ VGS = 10 V 35 0.014 @ VGS = 4.5 V 35 VDS (V) 30 Qg (Typ) 9 2 nC 9.2 D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKr Package

Si7686DP-T1-GE3

Abstract: Si7686DP Si7686DP-T1-E3
Contextual Info: Si7686DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0095 at VGS = 10 V 35 0.014 at VGS = 4.5 V 35 VDS (V) 30 Qg (Typ.) 9.2 nC PowerPAK SO-8 S 6.15 mm APPLICATIONS 5.15 mm 1 RoHS COMPLIANT Rectifier D • DC/DC Converters

Contextual Info: Si7686DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0095 at VGS = 10 V 35 0.014 at VGS = 4.5 V 35 VDS (V) 30 Qg (Typ.) 9.2 nC PowerPAK SO-8 S 6.15 mm APPLICATIONS 5.15 mm 1 RoHS COMPLIANT Rectifier D • DC/DC Converters

Si7686DP-T1-E3

Abstract: Si7686DP
Contextual Info: Si7686DP Vishay Siliconix New Product N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)a 0.0095 at VGS = 10 V 35 0.014 at VGS = 4.5 V 35 VDS (V) 30 Qg (Typ) 9.2 nC PowerPAK SO-8 • TrenchFET Power MOSFET • New Low Thermal Resistance PowerPAK®

Contextual Info: Si7686DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0095 at VGS = 10 V 35 0.014 at VGS = 4.5 V 35 VDS (V) 30 Qg (Typ.) 9.2 nC PowerPAK SO-8 S 6.15 mm APPLICATIONS 5.15 mm 1 RoHS COMPLIANT Rectifier D • DC/DC Converters

sl8z4

Abstract: diagram HANNSTAR k mv VDD256 hannstar j mv 1 g792 WISTRON diode c649 ST 1D05V M54-p PCI7412
Contextual Info: A B C D LWG2-D Block Diagram Discrete Mobile CPU CLK GEN. 4 IDT CV125PA Project code: 91.4Q801.001 PCB P/N : 55.4Q801.XXX REVISION : 06210-2 (Hannstar, ACCL) G792 Yonah 478 1.83G/2G/2.16G 4, 5 3 19 PCB STACKUP TOP TVO HOST BUS 400/533/667MHz LVDS DDR2 533/667MHz

TPS5117

Abstract: SN0608098 EMC4002 MEC5035 SRN100KJ-6-GP BCM5761 WISTRON power sequence EPSON C691 MAIN THERMAL fuse M33 07F schematic lcd inverter dell
Contextual Info: 5 4 3 2 1 D D FOOSE 15" UMA Schematics Document uFCPGA Mobile Penryn www.kythuatvitinh.com 2008-06-04 Intel Cantiga-GM + ICH9M C C REV : -1 B B DY : Nopop Component 5761 : Use BCM5761E 5756 : Use BCM5756M B_TPM : Use LOM TPM C_TPM : Use China TPM A A Wistron Corporation

tps51620

Abstract: fds8884 tps51125 Inventec MPLC0730 AM4825P r5c804 TP889 hp d530 crb tps51125 kbc
Contextual Info: www.laptop-schematics.com INVENTEC Preliminary Test 2008/03/25 EE DATE POWER DATE DRAWER DESIGN CHECK RESPONSIBLE DATE CHANGE NO. REV 3 SIZE = FILE NAME : XXXX-XXXXXX-XX P/N XXXXXXXXXXXX INVENTEC TITLE VER : Preliminary Test SIZE CODE A3 CS DOC. NUMBER REV

KB3926

Abstract: RTM875N-606-VD-GR bosch 0 281 003 039 Quanta qt6 bosch AXF 12V ME4410A G9931P1U bosch 0 281 003 009 bosch amplifier 0831 006 003 BOSCH 281 005 019
Contextual Info: 1 2 3 4 PCB STACK UP 6L 5 7 8 QT6 BLOCK DIAGRAM LAYER 2 : SGND 14.318MHz PAGE 4 A 478P uPGA /35W PAGE 3,4 LAYER 3 : IN1 01 CPU THERMAL SENSOR CPU Penryn LAYER 1 : TOP A 6 CLK_CPU_BCLK,CLK_CPU_BCLK# CLOCK GEN CLK_MCH_BCLK,CLK_MCH_BCLK# LAYER 4 : IN2 DREFCLK,DREFCLK#

LA-4611P

Abstract: KB926QFA1 south bridge SIS 968 la4611 sis m672 307ELV SiS307ELV ICS9LPR600 JP36B kb926qf
Contextual Info: A B PJP1 PJP1 14W_DCIN 15W_DCIN 14W_45@ 15W_45@ C D E 1 1 Compal Confidential KSW01/91 Schematics Document 2 2 Intel Merom Processor with SiSM672/FX + DDRII + SiS968 + SiS307ELV 2008-08-01 ZZZ9 3 REV: 0.2 PCB ZZZ1 ZZZ3 ZZZ4 ZZZ5 ZZZ6 PCB LA-4611P LS-4243P

TPS51125

Abstract: D0214 ENE3310 SRN10KJ-6-GP 88e8071 51125 KB3310 ich9 WINBOND W25X80 sp5 gfx
Contextual Info: 5 4 3 2 1 Cathedral Peak Block Diagram CLK GEN. D SYSTEM DC/DC Mobile CPU ICS 9LPRS365BKLFT 71.09365.A03 RTM 875N-606-LFT (71.00875.003) 3 PCB STACKUP THERMAL EMC2102 Penryn 479 21 DDR2 DIMM1 667/800 MHz TOP 667/800/1067MHz@1.05V DCBATOUT 3D3V_S5 CRT S LCD

kbc1070

Abstract: fds8884 AM4825P_AP Entery-3802 ICS9LPRS355 Inventec alcor AU6371 CHENMKO_CHPZ6V2_3P fix40 Socket AM2
Contextual Info: DDD UMA SI Build Final 2007.03.30 EE DATE POWER DATE DRAWER DESIGN CHECK RESPONSIBLE DATE CHANGE NO. REV 3 SIZE = FILE NAME : XXXX-XXXXXX-XX XXXXXXXXXXXX P/N INVENTEC TITLE VER : DDD UMA SIZE CODE A3 CS SHEET DOC. NUMBER REV Model_No 1 OF AX1 48 TABLE OF CONTENTS

SLG8SP587V

Abstract: SLG8SP587 LA5511P 216-0729042 BCM57780 ALC669X LA-5511P TPS51125 hm55 9LRS3199
Contextual Info: A B C D E 1 1 Compal Confidential 2 2 NCQD0 M/B Schematics Document Intel Arrandale/Clarksfield Processor with DDRIII + Ibex Peak-M 2009-08-10 3 3 REV:1.0 4 4 2009/08/10 Issued Date Compal Electronics, Inc. Compal Secret Data Security Classification 2010/08/10

CX20561-14Z

Abstract: max8731ae WPCE773LA b24 b03 so-8 P2003EV ICS9LPRS355 cx2056 WPCE775L p2003evg AO3413-GP
Contextual Info: 5 4 3 2 1 Warrior Intel UMA Block Diagram D Penryn SV 16 TPS51120 DDRII Slot 0 667/800 12 Cantiga-GM/GL AGTL+ CPU I/F DDRII 667/800 Slot 1 INTEGRATED GRAHPICS DDR II 667/800 Channel B LVDS, CRT I/F 13 PCIE 6,7,8,9,10,11 C LCD WXGA+ LVDS Dual Channel DDR I/F

AC82PM45

Abstract: AC82GM45 KB926 AF82801IBM SLB8Q N10M-GE1-S G545A1 NV10M-GS tps51620 LA-5081P KIWA7
Contextual Info: A B C D E 1 1 KIWA7/A8 2 2 Schematics Document Mobile Penryn uFCPGA with Intel Cantiga_GM/PM+ICH9-M core logic 3 3 REV:0.4 4 4 Issued Date Compal Electronics, Inc. Compal Secret Data Security Classification 2008/03/25 Deciphered Date 2008/04/ Title THIS SHEET OF ENGINEERING DRAWING IS THE PROPRIETARY PROPERTY OF COMPAL ELECTRONICS, INC. AND CONTAINS CONFIDENTIAL

SN0608098-GP

Abstract: BQ24745RHDR-GP lcd 15.4 inverter EPSON C691 MAIN AMD RS780 tps51125 MEC5035 foxconn TPS51117PWR-GP BCM5761
Contextual Info: 5 4 3 2 1 FOOSE UMA Schematics Document AMD 15.4" D D AMD Giffin CPU S1G2 AMD RS780 +SB700 C C 2008-01-04 REV : SB B B DY : Nopop Component 5761 : Use BCM5761E 5756 : Use BCM5756M B_TPM : Use LOM TPM C_TPM : Use China TPM <Variant Name> A A Wistron Corporation

RTM880N-796

Abstract: RTL8111DL KB3926 RTS5159 G786P8 RTL8103E 8111DL 966a quanta ut12 kb3926 d2
Contextual Info: 1 2 3 A 1 2 3 4 5 6 : : : : : : 5 6 7 8 UT12 UMA SYSTEM DIAGRAM PCB STACK UP LAYER LAYER LAYER LAYER LAYER LAYER 4 TOP IN1 IN2 VCC IN3 BOT DDRII DDRII-SODIMM1 667/800 MHz AMD Lion Sabie Griffin PAGE 6,7 DDRII DDRII-SODIMM2 01 CPU THERMAL SENSOR S1G2 Processor