SI6802DQ Search Results

Si6802DQ

Contextual Info: Si6802DQ Vishay Siliconix N-Channel, Reduced Qg, Fast Switching MOSFET PRODUCT SUMMARY VDS V 20 rDS(on) (W) ID (A) 0.075 @ VGS = 4.5 V "3.3 0.110 @ VGS = 3.0 V "2.7 D TSSOP-8 8 D 7 S 3 6 S 4 5 D D 1 S 2 S G D Si6802DQ G *Source Pins 2, 3, 6, and 7 must be tied common.

Si6802DQ

Contextual Info: SPICE Device Model Si6802DQ Vishay Siliconix N-Channel 20-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Contextual Info: Si6802DQ Vishay Siliconix N-Channel, Reduced Qg, Fast Switching MOSFET PRODUCT SUMMARY VDS V 20 RDS(ON) (W) ID (A) 0.075 @ VGS = 4.5 V "3.3 0.110 @ VGS = 3.0 V "2.7 D TSSOP-8 D 1 S 2 S 3 G 4 D Si6802DQ 8 D 7 S 6 S 5 D G *Source Pins 2, 3, 6, and 7 must be tied common.

Si6802DQ

Contextual Info: Limited Distribution Any Revision/Distribution Must Be Authorized By: Jim Harnden Si6802DQ N-Channel Enhancement-Mode MOSFET Product Summary VDS V 20 rDS(on) (W) ID (A) 0.075 @ VGS = 4.5 V "3.3 0.110 @ VGS = 3.0 V "2.7 D TSSOP-8 D S S G 1 D 2 8 Si6802DQ

Contextual Info: Tem ic Si6802DQ Semiconductors N-Channel, Reduced Qg, Fast Switching MOSFET Product Summary V d s V r D S (o n ) 20 I d (A ) (S3) 0.075 @ VGS = 4.5 V ± 3 .3 0.110 @ VGS= 3.0 V ± 2 .7 TSSO P-8 n . • s E s E 0 [T 71 D d 3 S S i6 8 0 2 D Q o-Jm G O- ~n s

Si6802DQ

Contextual Info: Si6802DQ N-Channel, Reduced Qg, Fast Switching MOSFET Product Summary VDS V 20 rDS(on) (W) ID (A) 0.075 @ VGS = 4.5 V "3.3 0.110 @ VGS = 3.0 V "2.7 D TSSOP-8 D S S G 1 D 2 8 Si6802DQ 7 3 6 4 5 D S S D G *Source Pins 2, 3, 6, and 7 must be tied common. Top View

Si6802DQ

Contextual Info: Si6802DQ N-Channel Enhancement-Mode MOSFET Product Summary VDS V 20 rDS(on) (W) ID (A) 0.075 @ VGS = 4.5 V "3.3 0.110 @ VGS = 3.0 V "2.7 D TSSOP-8 D S S G 1 D 2 8 Si6802DQ 7 3 6 4 5 D S S D G *Source Pins 2, 3, 6, and 7 must be tied common. Top View S* N-Channel MOSFET

71917

Abstract: level logic mosfet transistor so-8 offline switchmode si9110 siliconix an607 AN607 AN707 SI4406DY PowerPAK SO-8 si2301ds
Contextual Info: AN607 Vishay Siliconix DC-to-DC Design Guide Serge Jaunay, Jess Brown INTRODUCTION Manufacturers of electronic systems that require power conversion are faced with the need for higher-density dc-to-dc converters that perform more efficiently, within a smaller

VN10KLS

Abstract: mosfet bs250 Si4730 SUP85N03-04P VN66AFD Si4835DY si5504 SI3459DV sup65p06 sub75p05
Contextual Info: Power MOSFET Selector Guide Vishay Siliconix LITTLE FOOT Plusä ä Schottky Name Channel Configuration VDS V rDS(on) @ 10.0V rDS(on) @ 4.5V rDS(on) @ 3.3V rDS(on) @ 2.5V rDS(on) @ 1.8V ID (A) Max. Qg (nC) Typ. PD (W) Max. SO-8 Si4831DY P Single Plus Integrated

YTA630

Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
Contextual Info: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509

Contextual Info: _ SÌ6802DQ Vishay Siliconix N-Channel, Reduced Qg, Fast Switching MOSFET oS V DS IV RDS ON) (Q) I d (A) 0.075 @ VGS = 4.5 V ±3.3 0 110 V q S = 3.0 V ±2.7 20 TSSO P-8 •J a ‘ Source Pins 2, 3, 6. and 7 must be tied common.

TEMIC K153P

Abstract: TSHF5471 tfmw5380 dn1328 tdsr5156 dn904 TDSR5153 HS0038 IR sensor TLVD4900 TCDF1910
Contextual Info: Quality and Reliability Report 1997 TEMIC Semiconductors 07.97 Table of Contents TEMIC Quality Policy .1 Quality System .2

sud*50n025-06p

Abstract: SUD70N03-04P SI9120 sum45n25 SI9119 Si7810DN sud*50n025-09p SI2301ADS SI4732CY si9110
Contextual Info: SELECTOR GUIDE V I S H A Y I N T E R T E C H N O L O G Y, I N C . Power MOSFETs for DC/DC Applications Siliconix LITTLE FOOT LITTLE FOOT® Plus Tr e n c h F E T ® WFET ChipFET® P ow e r PA K ® Application-Specific MOSFETs w w w. v i s h a y. c o m